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1. 发明申请

US20150072166A1 BLACK-PLATED STEEL SHEET 有权
标题翻译：黑色钢板
公开(公告)号：US20150072166A1
公开(公告)日：2015-03-12
申请号：US14395521
申请日：2012-06-29
申请人： Tadashi Nakano , Masaya Yamamoto , Hirofumi Taketsu
发明人： Tadashi Nakano , Masaya Yamamoto , Hirofumi Taketsu
IPC分类号： C23C2/06 , B32B15/095
CPC分类号： C23C2/06 , B32B15/095 , B32B2250/03 , C22C18/04 , C23C8/00 , C23C8/16 , C23C22/73 , C23C22/83 , C23C28/00 , Y10T428/12535 , Y10T428/12549 , Y10T428/12569 , Y10T428/12583 , Y10T428/1259 , Y10T428/12611 , Y10T428/12667
摘要： A black-plated steel sheet has a Zn-plating layer containing molten Al and Mg, containing Al in the amount of 1.0-22.0 mass %, containing Mg in the amount of 1.3-10.0 mass %, and having a Zn black oxide distributed in a lamella pattern in the plating layer. The Zn black oxide is a Zn oxide derived from a Zn2Mg phase. The brightness of the surface of the Zn-plating layer containing the molten Al and Mg has an L* value of 60 or less.
摘要翻译：镀黑钢板具有含有熔融Al和Mg的Zn镀层，其含有量为1.0〜10.0质量％的Al，含有1.3〜10.0质量％的Mg，并且分布有Zn黑色氧化物镀层中的薄片图案。 Zn黑色氧化物是衍生自Zn2Mg相的Zn氧化物。包含熔融Al和Mg的Zn镀层的表面的亮度的L *值为60以下。

2. 发明授权

US09863027B2 Black-plated steel sheet 有权
公开(公告)号：US09863027B2
公开(公告)日：2018-01-09
申请号：US14395521
申请日：2012-06-29
申请人： Tadashi Nakano , Masaya Yamamoto , Hirofumi Taketsu
发明人： Tadashi Nakano , Masaya Yamamoto , Hirofumi Taketsu
IPC分类号： B32B15/08 , C23C2/06 , B32B15/095 , C23C8/00 , C23C8/16 , C22C18/04 , C23C28/00 , C23C22/73 , C23C22/83
CPC分类号： C23C2/06 , B32B15/095 , B32B2250/03 , C22C18/04 , C23C8/00 , C23C8/16 , C23C22/73 , C23C22/83 , C23C28/00 , Y10T428/12535 , Y10T428/12549 , Y10T428/12569 , Y10T428/12583 , Y10T428/1259 , Y10T428/12611 , Y10T428/12667
摘要： A black-plated steel sheet has a Zn-plating layer containing molten Al and Mg, containing Al in the amount of 1.0-22.0 mass %, containing Mg in the amount of 1.3-10.0 mass %, and having a Zn black oxide distributed in a lamella pattern in the plating layer. The Zn black oxide is a Zn oxide derived from a Zn2Mg phase. The brightness of the surface of the Zn-plating layer containing the molten Al and Mg has an L* value of 60 or less.

3. 发明授权

US06544666B2 Chemically processed steel sheet improved in corrosion resistance 有权
标题翻译：化学加工钢板耐腐蚀性提高
公开(公告)号：US06544666B2
公开(公告)日：2003-04-08
申请号：US10035554
申请日：2001-11-09
申请人： Kouichiro Ueda , Shigeyasu Morikawa , Tadashi Nakano , Yasumi Ariyoshi , Keiji Izumi , Masanori Matsuno , Hirofumi Taketsu
发明人： Kouichiro Ueda , Shigeyasu Morikawa , Tadashi Nakano , Yasumi Ariyoshi , Keiji Izumi , Masanori Matsuno , Hirofumi Taketsu
IPC分类号： B32B1518
CPC分类号： C23C22/44 , C23C22/361 , C23C22/364 , C23C22/368 , C23C22/47 , Y10T428/1259 , Y10T428/12611 , Y10T428/12618 , Y10T428/12799
摘要： A new processed steel sheet comprising of a steel base coated with a Zn or its alloy plating layer and a converted layer, which contains both of at least an insoluble or scarcely-soluble metal compound and at least a soluble metal compound. The insoluble or scarcely-soluble compound may be one or more of valve metal oxides or hydroxides, and the soluble compound may be one or more of valve metal fluorides. The converted layer may be also composed of one or more of complex compounds of Mn and Ti. The insoluble or scarcely-soluble compound acts as a barrier for insulation of a steel base from an atmosphere, while the soluble compound exhibits a self-repairing faculty to repair defective parts of the converted layer. Due to the converted layer, the processed steel sheet is remarkably improved in corrosion resistance, without the presence of chromium compounds which would put harmful influences on the environment.
摘要翻译：一种新的加工钢板，包括涂覆有Zn或其合金镀层的钢基体和包含至少不溶性或几乎不溶的金属化合物和至少可溶性金属化合物的转化层。不溶性或难溶性化合物可以是阀金属氧化物或氢氧化物中的一种或多种，并且可溶性化合物可以是阀金属氟化物中的一种或多种。转化层也可以由一种或多种Mn和Ti的复合化合物组成。不溶性或几乎不溶解的化合物作为钢碱与大气绝缘的屏障，而可溶性化合物则表现出自我修复的能力来修复转化层的有缺陷的部分。由于转化层，加工钢板的耐腐蚀性显着提高，而不会对存在会对环境产生有害影响的铬化合物。

4. 发明授权

US6015457A Stable inorganic polymers 失效
标题翻译：稳定的无机聚合物
公开(公告)号：US6015457A
公开(公告)日：2000-01-18
申请号：US39289
申请日：1998-03-12
申请人： Roger Y. Leung , Tadashi Nakano
发明人： Roger Y. Leung , Tadashi Nakano
IPC分类号： C08G77/12 , H01L21/312 , C08G77/04
CPC分类号： H01L21/312 , C08G77/12
摘要： Processes for producing poly (hydrido siloxane) copolymers and processes for producing solutions of such copolymers for coating semiconductor substrates are provided. The copolymers have the general formula: (HSiO.sub.1.5).sub.a (HSiO(OR)).sub.b (SiO.sub.2).sub.c, wherein R is a mixture of H and an alkyl group having between 1 and 4 carbon atoms; a+b+c=1; 0.5
摘要翻译：制备聚（羟基硅氧烷）共聚物的方法和用于制备用于涂覆半导体衬底的这种共聚物的溶液的方法。共聚物具有以下通式：（HSiO1.5）a（HSiO（OR））b（SiO 2）c，其中R是H和具有1至4个碳原子的烷基的混合物; a + b + c = 1; 0.5

5. 发明授权

US5300321A Process for depositing titanium nitride film by CVD 失效
标题翻译：通过CVD沉积氮化钛膜的工艺
公开(公告)号：US5300321A
公开(公告)日：1994-04-05
申请号：US056768
申请日：1993-05-04
申请人： Tadashi Nakano , Tomohiro Ohta
发明人： Tadashi Nakano , Tomohiro Ohta
IPC分类号： C23C16/34 , C23C16/00
CPC分类号： C23C16/34
摘要： A process which is capable of depositing a titanium nitride film of a high quality at a high deposition rate by low temperature chemical vapor deposition is provided. The titanium nitride film is deposited using a gas source comprising a compound of the general formula:A.sub.n B.sub.m Tiwherein n and m are independently selected from integers of from 1 to 3 provided that sum of n and m is equal to or smaller than 4; A is selected from a cyclic hydrocarbon group and a nitrogen-containing heterocyclic group which is bonded to the titanium by .pi. electron; and B is an alkylamine derivative group containing a nitrogen atom which is directly bonded to the titanium. The film deposition process of the invention is highly useful in LSI fabrication.
摘要翻译：提供了一种能够通过低温化学气相沉积以高沉积速率沉积高质量的氮化钛膜的方法。使用包含以下通式的化合物的气体源沉积氮化钛膜：AnBmTi其中n和m独立地选自1至3的整数，条件是n和m的和等于或小于4; A选自环状烃基和通过（pi）电子与钛结合的含氮杂环基; B是含有与钛直接结合的氮原子的烷基胺衍生物基团。本发明的成膜方法在LSI制造中是非常有用的。

6. 发明授权

US09082860B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09082860B2
公开(公告)日：2015-07-14
申请号：US13425448
申请日：2012-03-21
申请人： Tadashi Nakano , Mai Sugikawa , Kosei Noda
发明人： Tadashi Nakano , Mai Sugikawa , Kosei Noda
IPC分类号： H01L29/786 , H01L29/49
CPC分类号： H01L29/7869 , H01L29/0684 , H01L29/24 , H01L29/42364 , H01L29/42384 , H01L29/4908 , H01L29/78603 , H01L29/78606
摘要： A semiconductor device of stable electrical characteristics, whose oxygen vacancies in a metal oxide is reduced, is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, a first metal oxide film over the gate insulating film, a source electrode and a drain electrode which are in contact with the first metal oxide film, and a passivation film over the source electrode and the drain electrode. A first insulating film, a second metal oxide film, and a second insulating film are stacked sequentially in the passivation film.
摘要翻译：提供了一种其金属氧化物中的氧空位减小的具有稳定的电特性的半导体器件。半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的第一金属氧化物膜，与第一金属氧化物膜接触的源电极和漏极，以及钝化膜在源电极和漏电极上。第一绝缘膜，第二金属氧化物膜和第二绝缘膜依次层叠在钝化膜中。

7. 发明授权

US09069133B2 Anti-reflective coating for photolithography and methods of preparation thereof 有权
标题翻译：用于光刻的抗反射涂层及其制备方法
公开(公告)号：US09069133B2
公开(公告)日：2015-06-30
申请号：US10495686
申请日：2002-11-12
申请人： Teresa Baldwin , Joseph Kennedy , Nancy Iwamoto , Tadashi Nakano , William Bedwell , Jason Stuck , Arlene Suedemeyer , Mello Hebert
发明人： Teresa Baldwin , Joseph Kennedy , Nancy Iwamoto , Tadashi Nakano , William Bedwell , Jason Stuck , Arlene Suedemeyer , Mello Hebert
IPC分类号： C08G77/26 , G02B5/23 , C03C17/00 , C03C17/30 , C08G77/04 , C08G77/12 , C08K5/00 , C09D183/04 , C09D183/06 , C09D183/08 , G03F7/09 , H01L21/027
CPC分类号： G02B5/23 , C03C17/008 , C03C17/30 , C08G77/04 , C08G77/12 , C08K5/0008 , C09D183/04 , C09D183/06 , C09D183/08 , G03F7/091 , H01L21/0276 , Y10T428/31663 , C08L83/04 , C08L2666/28
摘要： Anti-reflective coating materials for ultraviolet photolithography include at least one absorbing compound and at least one material modification agent, such as at least one porogen, at least one high-boiling solvent, at least one capping agent, at least one leveling agent, at least one catalyst, at least one replacement solvent, at least one pH tuning agent, and/or a combination thereof that are incorporated into inorganic-based materials or inorganic compositions and/or compounds. Suitable absorbing compounds are those that absorb around wavelengths such as 365 nm, 248 nm, 193 nm and 157 nm that may be used in photolithography.
摘要翻译：用于紫外光刻的抗反射涂层材料包括至少一种吸收化合物和至少一种材料改性剂，例如至少一种致孔剂，至少一种高沸点溶剂，至少一种封端剂，至少一种流平剂，至少一种催化剂，至少一种替代溶剂，至少一种pH调节剂和/或其组合，其掺入无机基材料或无机组合物和/或化合物中。合适的吸收化合物是可以在光刻中使用的波长如365nm，248nm，193nm和157nm的那些吸收化合物。

8. 外观设计

USD669010S1 Wheel 有权
公开(公告)号：USD669010S1
公开(公告)日：2012-10-16
申请号：US29424961
申请日：2012-06-18
申请人： Tadashi Nakano
设计人： Tadashi Nakano

9. 发明授权

US06524657B2 Solvent systems for polymeric dielectric materials 失效
公开(公告)号：US06524657B2
公开(公告)日：2003-02-25
申请号：US10143039
申请日：2002-05-07
申请人： Oana M. Leonte , Tadashi Nakano , Kelly M. Beres , Kreisler Lau
发明人： Oana M. Leonte , Tadashi Nakano , Kelly M. Beres , Kreisler Lau
IPC分类号： B05D136
CPC分类号： H01L21/02118 , C08J3/095 , H01L21/02126 , H01L21/02216 , H01L21/02222 , H01L21/02282 , H01L21/312 , Y10T428/31504
摘要： Aromatic aliphatic ether solvents, such as anisole, methylanisole, and phenetole, have been found useful in formulating coating solutions of polymeric dielectric materials and as a clean up solvent in the coating process. A process for forming a dielectric film on a substrate includes depositing a coating solution of a dielectric material in a formulation solvent onto a surface of the substrate and depositing an aromatic aliphatic ether solvent onto an edge portion of the surface of the substrate. The process is used to form films of dielectric materials including arylene ether dielectric polymers, hydridosiloxane resins, organohydridosiloxane resins, spin-on-glass materials, partially hydrolyzed and partially condensed alkoxysilane compositions which are cured to form a nanoporous dielectric silica material, and poly(perhydrido)silazanes.

10. 发明授权

US06423651B1 Insulating film of semiconductor device and coating solution for forming insulating film and method of manufacturing insulating film 失效
标题翻译：用于形成绝缘膜的半导体器件和涂层溶液的绝缘膜和制造绝缘膜的方法
公开(公告)号：US06423651B1
公开(公告)日：2002-07-23
申请号：US08492108
申请日：1995-08-29
申请人： Tadashi Nakano , Kyoji Tokunaga
发明人： Tadashi Nakano , Kyoji Tokunaga
IPC分类号： H01L21302
CPC分类号： C09D183/04 , H01L21/316
摘要： It is an object to provide an insulating film which enables not only to obtain a good film quality but to achieve an excellent filling property, thick film formation and planarization simultaneously, and to provide an insulating film forming coating solution for forming the insulating film, and to provide a method of manufacturing the insulating film. An insulating film forming coating solution containing as a main component a solution of a polymer obtained by co-hydrolysis of trialkoxysilane expressed by a general formula, SiH(OR)3, methyltrialkoxysilane expressed by a general formula, SiCH3(OR)3, and tetraalkoxysilane expressed by a general formula, Si(OR)4 is coated on a semiconductor substrate (1) having a step portion, and after it is heated and dried in an inert gas atmosphere, an insulating film (6) which is composed of a silane-derived compound expressed by a general formula, SiHx(CH3)yO2−(x+y)/2, where, 0
摘要翻译：本发明的目的是提供一种绝缘膜，其不仅能够获得良好的膜质量，而且能够同时实现优异的填充性，厚膜形成和平坦化，并且提供用于形成绝缘膜的绝缘膜形成用涂布液，提供一种绝缘膜的制造方法。一种绝缘膜形成用涂布液，其以作为主要成分的由通式SiH（OR）3表示的三烷氧基硅烷，由一般式表示的甲基三烷氧基硅烷，通式SiCH 3（OR）3和由通式Si（OR）4表示的四烷氧基硅烷）涂覆在具有阶梯部分的半导体衬底（1）上，在惰性气体气氛中加热干燥后，由通式SiHx（CH3）yO2-（x + y）/ 2表示的硅烷衍生化合物组成的膜（6），其中0

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