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    • 2. 发明授权
    • Dielectric film and piezoelectric element
    • 电介质膜和压电元件
    • US07819508B2
    • 2010-10-26
    • US11392757
    • 2006-03-30
    • Akira KurikiKoji SumiHironobu KazamaMotoki TakabeMotohisa Noguchi
    • Akira KurikiKoji SumiHironobu KazamaMotoki TakabeMotohisa Noguchi
    • B41J2/45H01L41/08C04B35/00
    • H01L41/318B41J2/14233B41J2/161B41J2/1623B41J2/1629B41J2/1632B41J2/1646B41J2002/14241B41J2002/14419C23C18/1216C23C18/1283H01L41/0973H01L41/1876Y10T29/42Y10T29/435Y10T29/49155
    • A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C. and at a heating-up rate of 15 [° C./sec] or higher, and the sintering step is performed at a heating-up rate of 100 [° C./sec] to 150 [° C./sec].
    • 一种电介质膜的制造方法,其特征在于,包括:涂布包含含有构成含有至少含有铅成分的电介质膜的金属的有机金属化合物的胶体溶液以形成电介质前体膜的涂布步骤; 干燥所述电介质前体膜的干燥步骤; 脱脂步骤,使所述电介质前体膜脱脂; 以及烧结所述电介质前体膜以形成电介质膜的烧结步骤,其中所述干燥步骤包括将所述电介质前体膜加热到低于作为主要溶剂的溶剂的沸点的温度的第一干燥步骤 并将电介质前体膜在该温度下保持一定时间以干燥电介质前体膜;以及第二干燥步骤,在140℃至170℃的温度下干燥该电介质前体膜 在脱脂温度为350℃〜450℃,升温速度为15℃/秒以上的条件下进行脱脂工序,烧结工序在加热 升速率为100 [℃/秒]至150℃/秒。