会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 9. 发明授权
    • Dielectric film and piezoelectric element
    • 电介质膜和压电元件
    • US07819508B2
    • 2010-10-26
    • US11392757
    • 2006-03-30
    • Akira KurikiKoji SumiHironobu KazamaMotoki TakabeMotohisa Noguchi
    • Akira KurikiKoji SumiHironobu KazamaMotoki TakabeMotohisa Noguchi
    • B41J2/45H01L41/08C04B35/00
    • H01L41/318B41J2/14233B41J2/161B41J2/1623B41J2/1629B41J2/1632B41J2/1646B41J2002/14241B41J2002/14419C23C18/1216C23C18/1283H01L41/0973H01L41/1876Y10T29/42Y10T29/435Y10T29/49155
    • A method for producing a dielectric film, comprising: a coating step of coating a colloidal solution containing an organometallic compound containing a metal constituting a dielectric film containing at least a lead component to form a dielectric precursor film; a drying step of drying the dielectric precursor film; a degreasing step of degreasing the dielectric precursor film; and a sintering step of sintering the dielectric precursor film to form a dielectric film, and wherein the drying step includes a first drying step of heating the dielectric precursor film to a temperature lower than the boiling point of a solvent, which is a main solvent of the material, and holding the dielectric precursor film at the temperature for a certain period of time to dry the dielectric precursor film, and a second drying step of drying the dielectric precursor film at a temperature in the range of 140° C. to 170° C., the degreasing step is performed at a degreasing temperature of 350° C. to 450° C. and at a heating-up rate of 15 [° C./sec] or higher, and the sintering step is performed at a heating-up rate of 100 [° C./sec] to 150 [° C./sec].
    • 一种电介质膜的制造方法,其特征在于,包括:涂布包含含有构成含有至少含有铅成分的电介质膜的金属的有机金属化合物的胶体溶液以形成电介质前体膜的涂布步骤; 干燥所述电介质前体膜的干燥步骤; 脱脂步骤,使所述电介质前体膜脱脂; 以及烧结所述电介质前体膜以形成电介质膜的烧结步骤,其中所述干燥步骤包括将所述电介质前体膜加热到低于作为主要溶剂的溶剂的沸点的温度的第一干燥步骤 并将电介质前体膜在该温度下保持一定时间以干燥电介质前体膜;以及第二干燥步骤,在140℃至170℃的温度下干燥该电介质前体膜 在脱脂温度为350℃〜450℃,升温速度为15℃/秒以上的条件下进行脱脂工序,烧结工序在加热 升速率为100 [℃/秒]至150℃/秒。
    • 10. 发明申请
    • Actuator device, liquid-jet head and liquid-jet apparatus
    • 执行器装置,喷液头和液体喷射装置
    • US20070007860A1
    • 2007-01-11
    • US11482689
    • 2006-07-10
    • Motoki TakabeKoji SumiNaoto Yokoyama
    • Motoki TakabeKoji SumiNaoto Yokoyama
    • H01L41/187
    • B41J2/14233B41J2002/14241B41J2002/14419B41J2202/03B41J2202/20H01L41/0973H01L41/1876H01L41/318H01L41/319
    • An actuator device includes: a layer provided on a single crystal silicon (Si) substrate, and made of silicon dioxide (SiO2); at least one buffer layer provided on the layer made of silicon dioxide (SiO2); a base layer provided on the buffer layer, and made of lanthanum nickel oxide (LNO) having the (100) plane orientation; and a piezoelectric element. The piezoelectric element includes: a lower electrode provided on the base layer, and made of platinum (Pt) having the (100) plane orientation; a piezoelectric layer made of a ferroelectric layer whose plane orientation is the (100) orientation, the piezoelectric layer formed on the lower electrode by epitaxial growth where a crystal system of at least one kind selected from a group consisting of a tetragonal system, a monoclinic system and a rhombohedral system dominates the other crystal systems; and an upper electrode provided on the piezoelectric layer.
    • 致动器装置包括:设置在单晶硅(Si)衬底上的由二氧化硅(SiO 2)构成的层; 设置在由二氧化硅(SiO 2)构成的层上的至少一个缓冲层; 设置在缓冲层上的由具有(100)面取向的氧化镧(LNO)制成的基层; 和压电元件。 压电元件包括​​:设置在基底层上并由具有(100)面取向的铂(Pt)制成的下电极; 由平面取向为(100)取向的铁电体层构成的压电层,通过外延生长在下部电极上形成的压电体,其中选自四方晶系,单斜晶系 系统和菱方系统主导其他晶体系统; 以及设置在压电层上的上电极。