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1. 发明申请

US20100110148A1 PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME, LIQUID-EJECTING HEAD AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID-EJECTING APPARATUS 有权
标题翻译：压电元件及其制造方法，液体喷射头及其制造方法和液体喷射装置
公开(公告)号：US20100110148A1
公开(公告)日：2010-05-06
申请号：US12611823
申请日：2009-11-03
申请人： Akira Kuriki , Koji Sumi , Tatsuo Sawasaki , Tatsuro Torimoto , Motoki Takabe
发明人： Akira Kuriki , Koji Sumi , Tatsuo Sawasaki , Tatsuro Torimoto , Motoki Takabe
IPC分类号： B41J2/045 , H01L41/16 , H04R17/00
CPC分类号： B41J2/161 , B41J2/1646 , B41J2002/14241 , B41J2002/14419 , B41J2202/03 , H01L41/0973 , H01L41/1876 , H01L41/318 , Y10T29/42
摘要： A piezoelectric element includes a piezoelectric film containing lead (Pb), zirconium (Zr), and titanium (Ti). The piezoelectric film has a composition satisfying the relationship of Zr/(Ti+Zr)>Ti/(Ti+Zr) and has a polarization-electric field hysteresis loop having a Pm/2Pr of 1.95 or more and a Vc(−) of −1.75 V or more, wherein Pm denotes saturation polarization, Pr denotes remanent polarization, and Vc(−) denotes a negative coercive electric field intensity.
摘要翻译：压电元件包括含铅（Pb），锆（Zr）和钛（Ti）的压电膜。该压电膜具有满足Zr /（Ti + Zr）> Ti /（Ti + Zr）的关系的组成，并且具有Pm / 2Pr为1.95以上的极化电场磁滞回线，Vc（ - -1.75V以上，其中Pm表示饱和极化，Pr表示剩余极化，Vc（ - ）表示负矫顽电场强度。

2. 发明授权

US07547629B2 Ferroelectric capacitor and its manufacturing method and ferroelectric memory device 有权
标题翻译：铁电电容器及其制造方法和铁电存储器件
公开(公告)号：US07547629B2
公开(公告)日：2009-06-16
申请号：US11459742
申请日：2006-07-25
申请人： Hiroaki Tamura , Hiroyuki Mitsui , Tatsuo Sawasaki
发明人： Hiroaki Tamura , Hiroyuki Mitsui , Tatsuo Sawasaki
IPC分类号： H01L21/44 , H01L29/004
CPC分类号： H01L28/75 , H01L28/65
摘要： A method for manufacturing a ferroelectric capacitor includes steps of: (a) forming a first crystalline barrier layer; (b) forming a second crystalline barrier layer composed of nitride by nitriding the first crystalline barrier layer; (c) forming a first electrode above the second crystalline barrier layer; (d) forming a ferroelectric film on the first electrode; and (e) forming a second electrode on the ferroelectric film.
摘要翻译：制造铁电电容器的方法包括以下步骤：（a）形成第一晶体阻挡层; （b）通过氮化第一晶体阻挡层形成由氮化物构成的第二晶体阻挡层; （c）在第二晶体阻挡层上形成第一电极; （d）在所述第一电极上形成铁电体膜; 和（e）在所述强电介质膜上形成第二电极。

3. 发明申请

US20070131994A1 FERROELECTRIC MEMORY AND METHOD FOR MANUFACTURING FERROELECTRIC MEMORY 审中-公开
标题翻译：用于制造电磁记忆体的电磁记忆和方法
公开(公告)号：US20070131994A1
公开(公告)日：2007-06-14
申请号：US11608305
申请日：2006-12-08
申请人： Tatsuo SAWASAKI
发明人： Tatsuo SAWASAKI
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/65
摘要： A ferroelectric memory includes a ferroelectric capacitor formed from a lower electrode, an upper electrode and a ferroelectric layer interposed between the lower electrode and the upper electrode; and a metal wiring provided in an interlayer dielectric film, wherein a portion of the metal wiring that may otherwise come in contact with the interlayer dielectric film is covered by a diffusion prevention film.
摘要翻译：铁电存储器包括由下电极，上电极和介于下电极和上电极之间的铁电层形成的铁电电容器; 以及设置在层间电介质膜中的金属布线，其中可能与层间绝缘膜接触的金属布线的一部分被扩散防止膜覆盖。

4. 发明授权

US06924155B2 Ferroelectric memory, method of fabricating the same, semiconductor device, and method of fabricating the same 失效
标题翻译：铁电存储器，其制造方法，半导体器件及其制造方法
公开(公告)号：US06924155B2
公开(公告)日：2005-08-02
申请号：US10638343
申请日：2003-08-12
申请人： Tatsuo Sawasaki , Eiji Natori , Tomokazu Kobayashi , Yasuaki Hamada
发明人： Tatsuo Sawasaki , Eiji Natori , Tomokazu Kobayashi , Yasuaki Hamada
IPC分类号： H01L21/268 , H01L21/00 , H01L21/26 , H01L21/8246 , H01L27/105 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507
摘要： A method of manufacturing a ferroelectric memory of the present invention includes applying pulsed laser light 70 to a ferroelectric capacitor 105 from above the ferroelectric capacitor in a state in which at least the ferroelectric capacitor 105 is formed over a substrate 10.
摘要翻译：本发明的强电介质存储器的制造方法包括在至少在基板10上形成强电介质电容器105的状态下，将脉冲激光70从铁电电容器的上方施加到铁电电容器105。

5. 发明授权

US06884631B2 Method of forming a ferroelectric film by direct annealing of the ferroelectric film using laser or lamp followed by a second annealing through a light transmission and/or absorption film 有权
标题翻译：通过使用激光或灯直接退火铁电体膜，然后通过透光和/或吸收膜进行第二次退火来形成铁电体膜的方法
公开(公告)号：US06884631B2
公开(公告)日：2005-04-26
申请号：US10397431
申请日：2003-03-27
申请人： Tatsuo Sawasaki
发明人： Tatsuo Sawasaki
IPC分类号： C01G25/00 , C01G35/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8246 , H01L27/105 , H01L27/115 , H01L21/00
CPC分类号： H01L27/11502 , H01L21/02197 , H01L21/02282 , H01L21/02345 , H01L21/02356 , H01L21/31691 , H01L27/11507 , H01L28/55
摘要： In a method of forming a ferroelectric film according to the present invention, pulsed laser light or pulsed lamp light is applied to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the oxide film. A light transmission and/or absorption film is formed over the oxide film. Crystallization of the oxide is performed by applying pulsed laser light or pulsed lamp light from above the light transmission and/or absorption film to form a ferroelectric film.
摘要翻译：在根据本发明的形成铁电体膜的方法中，将脉冲激光或脉冲灯光施加到在衬底上形成的非晶氧化物膜，以在氧化膜中形成氧化物的微晶核。在氧化膜上形成透光和/或吸收膜。通过从光透射和/或吸收膜上方施加脉冲激光或脉冲灯光来进行氧化物的结晶以形成铁电体膜。

6. 发明授权

US06798625B1 Spin-valve magnetoresistance sensor and thin-film magnetic head 失效
标题翻译：旋转阀磁阻传感器和薄膜磁头
公开(公告)号：US06798625B1
公开(公告)日：2004-09-28
申请号：US09670309
申请日：2000-09-26
申请人： Masaki Ueno , Kiyotaka Tabuchi , Tatsuo Sawasaki , Hiroshi Nishida , Kazuhiro Mizukami , Fuminori Hikami
发明人： Masaki Ueno , Kiyotaka Tabuchi , Tatsuo Sawasaki , Hiroshi Nishida , Kazuhiro Mizukami , Fuminori Hikami
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3906 , G11B2005/3996
摘要： The present invention provides a spin-valve magnetoresistance sensor in which are formed, on top of the substrate, free layers, and pinned layers, enclosing a nonmagnetic spacer layer, and an antiferromagnetic layer adjacent to the pinned layers. The sensor is also equipped with a back layer including at least two nonmagnetic metal layers adjacent to the free layers on the side of the free layers opposite the nonmagnetic spacer layer. The back layer has at least one nonmagnetic metal layer of Cu with high electrical conductivity, preferably formed adjacent to the free layers, as for example in a two-layer structure of Cu and Ru or a three-layer structure Ru/Cu/Ru. In addition to a high read output, fluctuations in Hint with the film thickness of the back layer can be suppressed and sensor characteristics stabilized, and high recording densities can be realized.
摘要翻译：本发明提供了一种自旋阀磁阻传感器，其中在衬底的顶部上形成包围非磁性间隔层的自由层和钉扎层，以及邻近被钉扎层的反铁磁层。传感器还配备有背层，该背层包括与自由层相对的非磁性间隔层相对的自由层相邻的至少两个非磁性金属层。背层具有至少一个具有高导电性的Cu的非磁性金属层，优选邻近自由层形成，例如以Cu和Ru的两层结构或三层结构Ru / Cu / Ru形成。除了高读取输出之外，可以抑制提示背层的膜厚度的波动并且传感器特性稳定，并且可以实现高记录密度。

7. 发明授权

US07425738B2 Metal thin film and method of manufacturing the same, dielectric capacitor and method of manufacturing the same, and semiconductor device 有权
标题翻译：金属薄膜及其制造方法，介质电容器及其制造方法以及半导体器件
公开(公告)号：US07425738B2
公开(公告)日：2008-09-16
申请号：US11105368
申请日：2005-04-14
申请人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
发明人： Tatsuo Sawasaki , Kenichi Kurokawa , Teruo Tagawa , Kenichi Tsuchiya
IPC分类号： H01L27/108
CPC分类号： H01L28/65 , H01L21/32051 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A metal thin film provided on a substrate and having a metal with a face-centered cubic crystal structure, wherein the metal thin film is preferentially oriented in a (111) plane, and a (100) plane which is not parallel to a surface of the substrate is present on a surface of the thin film. In this metal thin film, the metal with a face-centered cubic crystal structure includes at least one element selected from the group consisting of Pt, Ir, and Ru.
摘要翻译：一种设置在基板上并具有面心立方晶体结构的金属的金属薄膜，其中所述金属薄膜优先取向于（111）面，和（100）面不平行于基板存在于薄膜的表面上。在这种金属薄膜中，具有面心立方晶体结构的金属包括选自Pt，Ir和Ru中的至少一种元素。

8. 发明申请

US20080019075A1 DIELECTRIC CAPACITOR 审中-公开
标题翻译：电介质电容器
公开(公告)号：US20080019075A1
公开(公告)日：2008-01-24
申请号：US11780005
申请日：2007-07-19
申请人： Tatsuo SAWASAKI , Yukio KITAHARA , Yukihiro IWASAKI
发明人： Tatsuo SAWASAKI , Yukio KITAHARA , Yukihiro IWASAKI
IPC分类号： H01G4/30
CPC分类号： H01G4/33 , H01G4/008 , H01G4/1227 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A dielectric capacitor includes: a TiAlN film formed on a base substrate; a first electrode formed above the TiAlN film; a dielectric film formed above the first electrode; and a second electrode formed above the dielectric film, wherein the TiAlN film is crystalline, and has a (200) plane preferentially oriented in parallel with a surface of the base substrate.
摘要翻译：介电电容器包括：形成在基底基板上的TiAlN膜; 形成在TiAlN膜上方的第一电极; 形成在所述第一电极上方的电介质膜; 以及形成在所述电介质膜上方的第二电极，其中所述TiAlN膜是结晶的，并且具有与所述基底基板的表面平行优先取向的（200）面。

9. 发明授权

US06340533B1 Spin-valve magnetoresistance sensor and thin film magnetic head 有权
标题翻译：旋转阀磁阻传感器和薄膜磁头
公开(公告)号：US06340533B1
公开(公告)日：2002-01-22
申请号：US09443953
申请日：1999-11-19
申请人： Masaki Ueno , Hideyasu Nagai , Tatsuo Sawasaki , Fuminori Hikami
发明人： Masaki Ueno , Hideyasu Nagai , Tatsuo Sawasaki , Fuminori Hikami
IPC分类号： B32B1500
CPC分类号： B82Y25/00 , B32B15/04 , C22C45/04 , G11B5/3929 , G11B2005/3996 , H01F10/3268 , Y10T428/12465 , Y10T428/12576 , Y10T428/12937
摘要： A synthetic-type spin-valve MR sensor having a pinned magnetic layer with a multi-layer film structure. In one embodiment, on a substrate are formed by layering a free magnetic layer, a pinned magnetic layer including first and second ferromagnetic films, which are mutually coupled antiferromagnetically and which enclose a nonmagnetic coupling film. A nonmagnetic conductive layer is enclosed between these two magnetic layers. An antiferromagnetic layer neighbors the pinned magnetic layer. The first ferromagnetic film neighboring the antiferromagnetic layer is formed from a high-resistivity Co-base material. By making the products of the saturation magnetization and the film thickness of the first ferromagnetic layer and the second ferromagnetic layer substantially equal, the apparent magnetic moment of the pinned magnetic layer as a whole is zero, and the magnetostatic action on the free magnetic layer is eliminated or reduced. Shunting of the sense current to the first ferromagnetic film is suppressed, and a high rate of magnetoresistive change is obtained.
摘要翻译：一种具有多层膜结构的钉扎磁性层的合成型自旋阀MR传感器。在一个实施例中，在衬底上通过层叠自由磁性层，包括第一和第二铁磁膜的钉扎磁性层，其被反铁磁相互耦合并且包围非磁性耦合膜。在这两个磁性层之间封装有非磁性导电层。反铁磁层与被钉扎的磁性层相邻。与反铁磁层相邻的第一铁磁膜由高电阻率Co基材料形成。通过使第一铁磁层和第二铁磁层的饱和磁化强度和膜厚度的乘积基本相等，固定磁性层整体的表观磁矩为零，自由磁性层的静磁力为消除或减少抑制了对第一铁磁膜的感测电流的分流，并且获得了高的磁阻变化率。

10. 发明授权

US07244979B2 Semiconductor memory device and method for manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07244979B2
公开(公告)日：2007-07-17
申请号：US11311841
申请日：2005-12-19
申请人： Yukihiro Iwasaki , Tatsuo Sawasaki , Kazumasa Hasegawa
发明人： Yukihiro Iwasaki , Tatsuo Sawasaki , Kazumasa Hasegawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： A semiconductor memory device includes a substrate having a semiconductor element formed thereon, an interlayer dielectric layer formed above the substrate, a plug formed in the interlayer dielectric layer, an adhesion layer formed in a region including a region above the plug, and a ferroelectric capacitor formed above the adhesion layer and having a lower electrode, a ferroelectric layer and an upper electrode, wherein an oxidized layer is formed in a part of the adhesion layer at a side wall thereof.
摘要翻译：半导体存储器件包括其上形成有半导体元件的衬底，在衬底上形成的层间电介质层，形成在层间电介质层中的插塞，形成在包括插塞上方的区域的区域中的粘合层，以及铁电电容器形成在粘合层的上方，具有下部电极，铁电体层和上部电极，其中在粘合层的侧壁的一部分中形成有氧化层。

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