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1. 发明申请

US20090039264A1 ELECTRON MICROSCOPE 有权
标题翻译：电子显微镜
公开(公告)号：US20090039264A1
公开(公告)日：2009-02-12
申请号：US12188870
申请日：2008-08-08
申请人： Akira IKEGAMI , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
发明人： Akira IKEGAMI , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
IPC分类号： G01N23/00
CPC分类号： H01J37/244 , H01J37/21 , H01J37/28 , H01J37/3045 , H01J2237/24564 , H01J2237/2594 , H01J2237/28 , H01J2237/2816 , H01J2237/30461
摘要： Disclosed herein are a method for applying, while a charged particle beam is in a state being irradiated toward the sample, a voltage to the sample so that the charged particle beam does not reach the sample (hereafter such state may be referred to as a mirror state) and detecting information on a potential of a sample using a signal obtained then, and a device for automatically adjusting conditions of the device based on the result of measuring.
摘要翻译：本文公开了一种在带电粒子束处于向样品照射的状态下施加电压给样品的方法，使得带电粒子束不到达样品（此后，这种状态可以称为反射镜状态），并且使用随后获得的信号检测样品的电位的信息，以及用于基于测量结果自动调整装置的状态的装置。

2. 发明授权

US08481935B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US08481935B2
公开(公告)日：2013-07-09
申请号：US13190153
申请日：2011-07-25
申请人： Akira Ikegami , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
发明人： Akira Ikegami , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
IPC分类号： H01J37/26
CPC分类号： H01J37/244 , H01J37/21 , H01J37/28 , H01J37/3045 , H01J2237/24564 , H01J2237/2594 , H01J2237/28 , H01J2237/2816 , H01J2237/30461
摘要： A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.
摘要翻译：一种具有带电粒子束的扫描电子显微镜，其在朝向样品照射的状态下，向样品施加电压，使得带电粒子束未到达样品。扫描电子显微镜还使用所获得的信号检测样品的电位信息，以及根据测定结果自动调整条件的装置。

3. 发明授权

US07989768B2 Scanning electron microscope 有权
标题翻译：扫描电子显微镜
公开(公告)号：US07989768B2
公开(公告)日：2011-08-02
申请号：US12188870
申请日：2008-08-08
申请人： Akira Ikegami , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
发明人： Akira Ikegami , Minoru Yamazaki , Hideyuki Kazumi , Koichiro Takeuchi , Hisaya Murakoshi
IPC分类号： H01J37/26 , H01J37/28
CPC分类号： H01J37/244 , H01J37/21 , H01J37/28 , H01J37/3045 , H01J2237/24564 , H01J2237/2594 , H01J2237/28 , H01J2237/2816 , H01J2237/30461
摘要： A scanning electron microscope having a charged particle beam that when in a state being irradiated toward a sample, a voltage is applied to the sample so that the charged particle beam does not reach the sample. The scanning electron microscope also detects information on a potential of a sample using a signal obtained, and a device for automatically adjusting conditions based on the result of measuring.
摘要翻译：一种具有带电粒子束的扫描电子显微镜，其在朝向样品照射的状态下，向样品施加电压，使得带电粒子束未到达样品。扫描电子显微镜还使用所获得的信号检测样品的电位信息，以及根据测定结果自动调整条件的装置。

4. 发明授权

US08803411B2 Charged particle beam radiation apparatus 有权
标题翻译：带电粒子束辐射装置
公开(公告)号：US08803411B2
公开(公告)日：2014-08-12
申请号：US13812700
申请日：2011-06-15
申请人： Shunichi Watanabe , Takashi Onishi , Minoru Kaneda , Hisaya Murakoshi
发明人： Shunichi Watanabe , Takashi Onishi , Minoru Kaneda , Hisaya Murakoshi
IPC分类号： H01J29/84 , H01J29/48 , H01J3/40 , H01J3/02 , H01J37/02
CPC分类号： H01J29/484 , H01J3/02 , H01J3/027 , H01J3/40 , H01J29/488 , H01J37/026 , H01J37/073 , H01J37/248 , H01J2237/038 , H01J2237/06341 , H01J2237/0802
摘要： In an accelerating tube which uses a conductive insulator, there is a possibility that the dopant concentration on a surface of the conductive insulator becomes non-uniform so that the surface resistance of the conductive insulator becomes non-uniform. Accordingly, a circumferential groove is formed on the inner surface of the conductive insulator accelerating tube in plural stages, and metal is metalized along inner portions of the grooves. When the resistance of a specific portion on the surface of the accelerating tube differs from the resistance of an area around the specific portion, the potential of the metalized region on the inner surface of the accelerating tube becomes a fixed value and hence, the potential distribution on the inner surface of the accelerating tube in the vertical direction can be maintained substantially equal without regard to the circumferential direction.
摘要翻译：在使用导电绝缘体的加速管中，导电绝缘体的表面上的掺杂剂浓度有可能变得不均匀，使得导电绝缘体的表面电阻变得不均匀。因此，在导电绝缘体加速管的内表面上形成有多个周向槽，并且金属沿着槽的内部被金属化。当加速管表面上的特定部分的电阻与特定部分周围的区域的电阻不同时，加速管内表面上的金属化区域的电位变为固定值，因此电位分布在加速管的内表面上，在垂直方向上可以保持基本上相等于圆周方向。

5. 发明授权

US07982188B2 Apparatus and method for wafer pattern inspection 有权
标题翻译：晶圆图案检查的装置和方法
公开(公告)号：US07982188B2
公开(公告)日：2011-07-19
申请号：US11336895
申请日：2006-01-23
申请人： Hiroyuki Shinada , Hisaya Murakoshi , Hideo Todokoro , Hiroshi Makino , Yoshihiro Anan
发明人： Hiroyuki Shinada , Hisaya Murakoshi , Hideo Todokoro , Hiroshi Makino , Yoshihiro Anan
IPC分类号： G21K7/00
CPC分类号： H01J37/29 , H01J2237/2817
摘要： An electric field for decelerating an electron beam is formed on a surface of a sample semiconductor to be inspected, an electron beam having a specific area (a sheet electron beam) and containing a component having such an energy as not to reach the surface of the sample semiconductor is reflected in the very vicinity of the surface of the sample semiconductor by action of the electric field for deceleration and then forms an image through an imaging lens. Thus images of plural fields on the surface of the sample semiconductor are obtained and are stored in image memory units. By comparing the stored images of the plural fields with one another, the presence and position of a defect in the fields are determined.
摘要翻译：在要检查的样品半导体的表面上形成用于减小电子束的电场，具有特定面积的电子束（片状电子束）并且包含具有不能到达表面的能量的成分通过用于减速的电场的作用，样品半导体在样品半导体的表面的非常附近被反射，然后通过成像透镜形成图像。因此，获得样品半导体表面上的多个场的图像并将其存储在图像存储单元中。通过将存储的多个场的图像相互比较，确定场中的缺陷的存在和位置。

6. 发明授权

US07566871B2 Method and apparatus for pattern inspection 有权
标题翻译：图案检查方法和装置
公开(公告)号：US07566871B2
公开(公告)日：2009-07-28
申请号：US11698025
申请日：2007-01-26
申请人： Masaki Hasegawa , Hisaya Murakoshi , Hiroshi Makino
发明人： Masaki Hasegawa , Hisaya Murakoshi , Hiroshi Makino
IPC分类号： G01N23/00 , G21K7/00 , A61N5/00 , G21G5/00
CPC分类号： H01J37/265 , G06T7/0004 , G06T2207/10056 , G06T2207/30148 , H01J37/29 , H01J2237/22 , H01J2237/24592
摘要： Because a mirror electron imaging type inspection apparatus for obtaining an inspection object image with mirror electrons has been difficult to optimize inspection conditions, since the image forming principles of the apparatus are different from those of conventional SEM type inspection apparatuses. In order to solve the above conventional problem, the present invention has made it possible for the user to examine such conditions as inspection speed, inspection sensitivity, etc. intuitively by displaying the relationship among the values of inspection speed S, inspection object digital signal image pixel size D, inspection object image size L, and image signal acquisition cycle P with use of a time delay integration method as a graph on an operation screen. The user can thus determine a set of values of a pixel size, an inspection image width, and a TDI sensor operation cycle easily with reference to the displayed graph.
摘要翻译：由于用于获得具有镜电子的检查对象图像的镜像电子成像型检查装置难以优化检查条件，因为该装置的图像形成原理与常规SEM型检查装置的图像形成原理不同。为了解决上述常规问题，本发明使得用户可以通过显示检查速度S，检查对象数字信号图像的值之间的关系来直观地检查诸如检查速度，检查灵敏度等条件像素尺寸D，检查对象图像尺寸L和图像信号采集周期P，使用时间延迟积分方法作为操作画面上的图形。因此，用户可以参照所显示的图形容易地确定像素尺寸，检查图像宽度和TDI传感器操作循环的一组值。

7. 发明申请

US20060231758A1 Inspection system, inspection method, and process management method 有权
公开(公告)号：US20060231758A1
公开(公告)日：2006-10-19
申请号：US11450459
申请日：2006-06-12
申请人： Hiroshi Makino , Hisaya Murakoshi , Hiroyuki Shinada , Hideo Todokoro
发明人： Hiroshi Makino , Hisaya Murakoshi , Hiroyuki Shinada , Hideo Todokoro
IPC分类号： G21K7/00
CPC分类号： H01J37/292 , G01N23/04 , H01J2237/2817
摘要： The present invention relates to an inspection apparatus comprising: an electron emitting unit for sequentially emitting an electron beam in the direction of the inspection area of a sample; a decelerating means for drawing back the electron beam in the vicinity of the inspection area; an imaging unit for forming images of the electron beam, which has been drawn back in the vicinity of the inspection area, on multiple different image forming conditions; an image detecting unit for capturing the electron beam that formed an image corresponding to each image forming condition and an image processing unit for comparing the images on different image forming conditions with one another to thereby detect a defect in the inspection area.

8. 发明授权

US06583413B1 Method of inspecting a circuit pattern and inspecting instrument 有权
标题翻译：检查电路图案和检查仪器的方法
公开(公告)号：US06583413B1
公开(公告)日：2003-06-24
申请号：US09652606
申请日：2000-08-30
申请人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
发明人： Hiroyuki Shinada , Atsuko Takafuji , Takanori Ninomiya , Yuko Sasaki , Mari Nozoe , Hisaya Murakoshi , Taku Ninomiya , Yuji Kasai , Hiroshi Makino , Yutaka Kaneko , Kenji Tanimoto
IPC分类号： G01N2300
CPC分类号： G01N23/225 , G01R31/307 , H01J37/28 , H01J2237/2817
摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.
摘要翻译：电路图形检查装置包括用于对样品照射电子束的电子光学系统，电子束偏转器，用于从样品检测二次带电粒子的检测器，以及用于在第一模式和第二模式之间切换的模式设置单元模式。在第一模式中电子束电流比第二模式中的电子束电流大，并且在第一模式中电子束扫描速度高于第二模式。电路图形检查装置被配置为使得首先在第一模式中观察样本，然后基于在第一模式中由检测器的输出产生的图像数据来选择样本上的特定位置，然后选择特定位置在第二模式下观察样品。

9. 发明授权

US08766542B2 Field-emission electron gun and method for controlling same 有权
标题翻译：场发射电子枪及其控制方法
公开(公告)号：US08766542B2
公开(公告)日：2014-07-01
申请号：US13577998
申请日：2011-01-19
申请人： Boklae Cho , Shigeru Kokubo , Hisaya Murakoshi , Hisao Nitta
发明人： Boklae Cho , Shigeru Kokubo , Hisaya Murakoshi , Hisao Nitta
IPC分类号： H01J7/24
CPC分类号： H01J29/98 , H01J37/073 , H01J2237/022 , H01J2237/0653 , H01J2237/1825
摘要： The disclosed charged particle beam apparatus includes a field-emission electron source including single crystal of tungsten; a vacuum chamber having the electron source therein; an exhausting system for exhausting the vacuum chamber; a filament connected to the electron source to let flow a current through the electron source and thereby heat the electron source; a power supply for letting a current flow through the filament; an ammeter for measuring a total current emitted from the electron source; and a controlling unit for exercising control to cause the power supply to let a current flow through the filament when the total current measured periodically has become a predetermined ratio or less as compared with a total current from the electron source found immediately after first electron beam emission, or a total current from the electron beam found immediately after a current is let flow through the filament.
摘要翻译：所公开的带电粒子束装置包括：场致发射电子源，其包括钨的单晶; 其中具有电子源的真空室; 用于排出真空室的排气系统; 连接到电子源的灯丝，使电流流过电子源，从而加热电子源; 用于使电流流过灯丝的电源; 用于测量从电子源发射的总电流的电流表; 以及控制单元，用于当与在第一电子束发射之后立即发现的电子源的总电流相比，当周期性测量的总电流已经变为预定比率或更小时，进行控制以使电源使电流流过灯丝，或者在电流流过灯丝之后立即发现来自电子束的总电流。

10. 发明授权

US07547884B2 Pattern defect inspection method and apparatus thereof 有权
标题翻译：图案缺陷检查方法及其装置
公开(公告)号：US07547884B2
公开(公告)日：2009-06-16
申请号：US11449650
申请日：2006-06-09
申请人： Masaki Hasegawa , Hiroshi Makino , Hikaru Koyama , Zhaohui Cheng , Hisaya Murakoshi
发明人： Masaki Hasegawa , Hiroshi Makino , Hikaru Koyama , Zhaohui Cheng , Hisaya Murakoshi
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： H01J37/026 , G01R31/307 , H01J37/29 , H01J2237/0045 , H01J2237/0047 , H01J2237/045 , H01J2237/2594 , H01J2237/2817
摘要： In the present invention, the structure of an electrification control electrode is changed from a grid type to a slit type and thereby shadows are not formed when a wafer is irradiated with a beam. Further, a beam forming slit is disposed ahead of an electrification control slit, thus the electrification control slit is prevented from being irradiated with an electron beam for preliminary electrification, and thereby secondary electrons which disturb the control of the electrification are inhibited from being generated. The shape of the slit is designed so that the strength of an electron beam may gradually decrease toward both the ends of an electron beam irradiation region in the longitudinal direction thereof. Furthermore, a preliminary static eliminator to remove or reduce the unevenness in an electrification potential distribution which has undesirably been formed earlier is disposed.
摘要翻译：在本发明中，充电控制电极的结构从栅格型切换为狭缝型，从而在用光束照射晶片时不形成阴影。此外，在充电控制狭缝的前方设置有光束形成狭缝，防止了带电控制狭缝被用于预充电的电子束照射，从而抑制了妨碍电气控制的二次电子的产生。狭缝的形状被设计成使得电子束的强度可以朝着电子束照射区域的纵向的两端逐渐减小。此外，设置用于去除或减少不期望地形成的带电电位分布的不均匀性的初步除电器。

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