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1. 发明申请

US20090016706A1 Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices 有权
标题翻译：加热装置，基板处理装置以及半导体装置的制造方法
公开(公告)号：US20090016706A1
公开(公告)日：2009-01-15
申请号：US12213823
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： F26B3/28
CPC分类号： H01L21/67109 , H01L21/67115
摘要： A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit.
摘要翻译：加热装置包括用于围绕和限定加热空间的壁，安装在壁的内侧上的加热元件，用于反射从加热元件发出的热的反射构件。而且，移动单元连接到每个反射构件的一端以移动反射构件。此外，枢转构件在反射构件的相对另一侧更靠近反射构件的一侧接合，用于控制由移动单元驱动的反射构件的运动。

2. 发明授权

US5821325A Polycarbodiimide derivatives and method for preparing the same 失效
标题翻译：聚碳二亚胺衍生物及其制备方法
公开(公告)号：US5821325A
公开(公告)日：1998-10-13
申请号：US763982
申请日：1996-12-10
申请人： Ken Yahata , Yasuyuki Takiguchi , Hiroshi Miyoshi , Yasuyoshi Komoto , Akira Hayashida
发明人： Ken Yahata , Yasuyuki Takiguchi , Hiroshi Miyoshi , Yasuyoshi Komoto , Akira Hayashida
IPC分类号： C08G18/02 , C08G73/10 , C08G63/06 , C08G75/04
CPC分类号： C08G18/025
摘要： A hydroxy- or mercapto-bearing organic compound is caused to react with a polycarbodiimide compound in the presence of an alcoholate of an alkali metal or of an alkaline earth metal. The carbodiimide linkage in the polymer which results from the above-described reaction is crosslinked.
摘要翻译：使含羟基或巯基的有机化合物在碱金属或碱土金属的醇化物的存在下与聚碳化二亚胺化合物反应。由上述反应得到的聚合物中的碳二亚胺键被交联。

3. 发明授权

US5750637A Process for the preparation of a polycarbodiimide solution 失效
标题翻译：制备聚碳二亚胺溶液的方法
公开(公告)号：US5750637A
公开(公告)日：1998-05-12
申请号：US658166
申请日：1996-06-04
申请人： Yasuyuki Takiguchi , Ken Yahata , Yasuyoshi Komoto , Akira Hayashida , Minoru Takamizawa
发明人： Yasuyuki Takiguchi , Ken Yahata , Yasuyoshi Komoto , Akira Hayashida , Minoru Takamizawa
IPC分类号： C08G18/00 , C08G18/02 , C08G73/00 , C08G73/10
CPC分类号： C08G73/00 , C08G18/025
摘要： This invention provides a process for the preparation of a polycarbodiimide solution wherein the polycarbodiimide is synthesized by heating an organic diisocyanate (e.g., 2,4-tolylene diisocyanate or 2,6-tolylene diisocyanate) in the presence of a carbodiimidation catlayst characterized in that a non-chlorinated aromatic hydrocarbon is used as the solvent and the resulting polycarbodiimide has a number average molecular weight from about 3,000 to about 10,000; wherein the synthesis is performed in the temperature range of from about 100.degree. to about 120.degree. C.
摘要翻译：本发明提供一种制备聚碳二亚胺溶液的方法，其中聚碳二亚胺通过在碳二亚胺二酰亚胺存在下加热有机二异氰酸酯（例如，2,4-甲苯二异氰酸酯或2,6-甲苯二异氰酸酯）来合成，其特征在于，使用非氯化芳烃作为溶剂，所得聚碳二亚胺的数均分子量为约3,000至约10,000; 其中合成在约100℃至约120℃的温度范围内进行。

4. 发明授权

US4958040A Process for the preparation of diorganohalogenosilanes 失效
标题翻译：制备二有机卤代硅烷的方法
公开(公告)号：US4958040A
公开(公告)日：1990-09-18
申请号：US410202
申请日：1989-09-21
申请人： Hiroshi Yoshioka , Masaaki Yamaya , Hiromi Ohsaki , Akira Hayashida
发明人： Hiroshi Yoshioka , Masaaki Yamaya , Hiromi Ohsaki , Akira Hayashida
IPC分类号： B01J27/125 , C07B61/00 , C07F7/12
CPC分类号： C07F7/126
摘要： A process for preparing diorganohalogenosilanes wherein diorganodihalogenosilanes are reacted with at least one organosilicon compound having at least one .tbd.Si--H bond in the molecule and selected from polysilanes, polycarbosilanes and polysilphenylenes is described. This reaction proceeds in the presence of a Lewis acid.
摘要翻译：描述了制备二有机二卤代硅烷与至少一种在分子中具有至少一个3BOND Si-H键的有机硅化合物反应并选自聚硅烷，聚碳硅烷和聚苯乙烯的二有机卤代硅烷的方法。该反应在路易斯酸存在下进行。

5. 发明授权

US4869854A Process for manufacturing organic silazane polymers and ceramics therefrom 失效
标题翻译：从其制造有机硅氮烷聚合物和陶瓷的方法
公开(公告)号：US4869854A
公开(公告)日：1989-09-26
申请号：US114111
申请日：1987-10-27
申请人： Yoshihumi Takeda , Minoru Takamizawa , Akira Hayashida
发明人： Yoshihumi Takeda , Minoru Takamizawa , Akira Hayashida
IPC分类号： C03B8/02 , C04B35/571 , C04B35/589 , C08G77/62 , C08L83/16
CPC分类号： C08L83/16 , C04B35/571 , C04B35/589 , C08G77/62
摘要： A process for manufacturing an organic silazane polymer which comprises reacting ammonia with a mixture of at least one compound selected from the group consisting of organic silicon compounds of the following formulae (I) and (II) ##STR1## and at least one compound selected from the group consisting of organic silicon compounds of the following formula (III) ##STR2## in which R represents hydrogen, chlorine, bromine, methyl radical, ethyl radical, phenyl radical or vinyl radical, R.sub.1 represents hydrogen or methyl radical, R.sub.2 represents hydrogen, methyl radical, ethyl radical, phenyl radical or vinyl radical and X represents chlorine or bromine; to obtain an ammonolysis product. The ammonolysis product is polymerized in the presence of a basic catalyst capable of deprotonation to obtain an organic silazane polymer. The silazane polymer may be further melted, shaped and infusibilized. The thus infusibilized product is finally sintered to obtain a ceramic material.
摘要翻译：一种制备有机硅氮烷聚合物的方法，其包括使氨与至少一种选自下式（I）和（II）的有机硅化合物的化合物的混合物反应：（IMA） II）和选自下式（III）的有机硅化合物（III）中的至少一种化合物，其中R表示氢，氯，溴，甲基，乙基，苯基或乙烯基 R1表示氢或甲基，R2表示氢，甲基，乙基，苯基或乙烯基，X表示氯或溴; 以获得氨解产物。氨解产物在能够去质子化的碱性催化剂存在下聚合，得到有机硅氮烷聚合物。硅氮烷聚合物可以进一步熔融，成型和不熔化。将这样的不熔化产物最终烧结得到陶瓷材料。

6. 发明授权

US4771118A Process for manufacturing organic silazane polymers and process for manufacturing ceramics from the polymers 失效
标题翻译：用于制造有机硅氮烷聚合物的方法和由聚合物制造陶瓷的方法
公开(公告)号：US4771118A
公开(公告)日：1988-09-13
申请号：US903409
申请日：1986-09-03
申请人： Minoru Takamizawa , Mitsuo Umemura , Masato Kanari , Yoshihumi Takeda , Akira Hayashida
发明人： Minoru Takamizawa , Mitsuo Umemura , Masato Kanari , Yoshihumi Takeda , Akira Hayashida
IPC分类号： C08G77/48 , C04B35/571 , C04B35/589 , C08G77/62 , C08G77/06
CPC分类号： C04B35/589 , C08G77/62
摘要： A process for manufacturing an organic silazane polymer which comprises reacting ammonia with a mixture of methyldichlorosilane, methyltrichlorosilane and dimethyldichlorosilane to obtain an ammonolysis product. The ammonolysis product is polymerized in the presence of a basic catalyst capable of deprotonation to obtain an organic silazane polymer. The silazane polymer may be further melted, shaped and infusibilized. The thus infusibilized product is finally sintered to obtain a ceramic material.
摘要翻译：一种制备有机硅氮烷聚合物的方法，其包括使氨与甲基二氯硅烷，甲基三氯硅烷和二甲基二氯硅烷的混合物反应以获得氨解产物。氨解产物在能够去质子化的碱性催化剂存在下聚合，得到有机硅氮烷聚合物。硅氮烷聚合物可以进一步熔融，成型和不熔化。将这样的不熔化产物最终烧结得到陶瓷材料。

7. 发明授权

US4571331A Ultrafine powder of silicon carbide, a method for the preparation thereof and a sintered body therefrom 失效
标题翻译：超细碳化硅粉末，其制备方法和烧结体
公开(公告)号：US4571331A
公开(公告)日：1986-02-18
申请号：US560389
申请日：1983-12-12
申请人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki , Nichiro Suzuki , Takasi Toide
发明人： Morinobu Endou , Minoru Takamizawa , Tatsuhiko Hongu , Taishi Kobayashi , Akira Hayashida , Nobuaki Urasato , Hiromi Ohsaki , Nichiro Suzuki , Takasi Toide
IPC分类号： C01B31/36 , C04B35/565 , C04B35/575
CPC分类号： B82Y30/00 , C01B31/36 , C04B35/565 , C04B35/575 , C01P2002/72 , C01P2002/82 , C01P2004/62 , C01P2004/64 , C01P2006/40
摘要： The invention provides a method for the preparation of an ultrafine powder of silicon carbide having an extremely fine and uniform particle size distribution of spherical agglomerate particles each formed of crystallites of 5 nm or smaller in size. The silicon carbide powder is prepared by the vapor phase pyrolysis of a specified methyl hydrogen(poly)silane as diluted with a carrier gas, e.g. hydrogen, to give a concentration of 40% by volume or lower at a temperature of 750.degree. to 1600.degree. C. The silicon carbide powder can readily be sintered at a temperature of 1750.degree. to 2500.degree. C. even without addition of a sintering aid to give a sintered body of extremely high density reaching 80% or larger of the theoretical value which can never be obtained of the conventional silicon carbide powders.
摘要翻译：本发明提供一种制备碳化硅超细粉末的方法，其具有均匀的颗粒尺寸分布的球形聚集体颗粒，它们各自由5nm或更小的微晶形成。碳化硅粉末通过气相热分解制备，所述气相热分解用载气稀释的特定甲基氢（聚）硅烷。氢气，在750〜1600℃的温度下浓度为40体积％以下。碳化硅粉末可以容易地在1750〜2500℃的温度下烧结，即使不添加烧结助剂得到非常高密度的烧结体达到常规碳化硅粉末不可获得的理论值的80％以上。

8. 发明授权

US4246178A Tetrahydropyran-5-one compounds 失效
标题翻译：四氢吡喃-5-酮化合物
公开(公告)号：US4246178A
公开(公告)日：1981-01-20
申请号：US952457
申请日：1978-10-18
申请人： Akira Yamamoto , Kenichi Taguchi , Akira Hayashida , Toshinobu Ishihara
发明人： Akira Yamamoto , Kenichi Taguchi , Akira Hayashida , Toshinobu Ishihara
IPC分类号： C07D309/28 , B23K31/02 , C07D309/30 , C07D309/06
CPC分类号： C07D309/30
摘要： A novel class of tetrahydropyran-5-one compounds are provided which are 2-alkoxy- or 2-acyloxy-3,4-dihalogeno-6-alkyl tetrahydropyran-5-ones expressed by the general formula ##STR1## where R.sup.1 is an alkyl group, R.sup.2 is an alkyl or an acyloxy group and X is a halogen atom. The compounds are synthesized by the reaction of a 2-furyl carbinol compound with a halogen in the presence of an alcohol or a carboxylic acid. The compounds are useful as an intermediate for the synthetic preparation of various useful compounds including maltol as a flavor.
摘要翻译：提供了一类新的四氢吡喃-5-酮化合物，它们是由通式“IMAGE”表示的2-烷氧基 - 或2-酰氧基-3,4-二卤代-6-烷基四氢吡喃-5-酮，其中R 1是烷基基团，R2是烷基或酰氧基，X是卤素原子。该化合物通过2-甲酰基甲醇化合物与卤素在醇或羧酸存在下的反应而合成。该化合物可用作合成制备各种有用化合物的中间体，包括麦芽酚作为风味剂。

9. 发明授权

US09184069B2 Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator 有权
公开(公告)号：US09184069B2
公开(公告)日：2015-11-10
申请号：US12213824
申请日：2008-06-25
申请人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
发明人： Akira Hayashida , Masaaki Ueno , Masakazu Shimada , Masashi Sugishita , Toshimitsu Miyata , Kimio Kitamura , Kenji Tanaka , Jyunichi Nishihara
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306 , H01L21/67 , H01L21/66 , H01L21/673
CPC分类号： H01L21/67109 , H01L21/67248 , H01L21/67303 , H01L22/12 , Y10T29/41
摘要： A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening.

10. 发明授权

US07863204B2 Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure 有权
标题翻译：基板处理装置，使用该加热装置的加热装置，利用这些装置制造半导体的方法和加热元件支撑结构
公开(公告)号：US07863204B2
公开(公告)日：2011-01-04
申请号：US11990519
申请日：2006-08-23
申请人： Toshimitsu Miyata , Akira Hayashida , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka
发明人： Toshimitsu Miyata , Akira Hayashida , Masakazu Shimada , Kimio Kitamura , Kenji Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L21/67109
摘要： A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and the enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections.
摘要翻译：一种基板处理装置，包括用于存储和处理基板的处理室和具有加热元件和隔热件的加热装置，并且通过加热元件加热处理室中的基板。加热元件形成为只有其一端由保持部保持，并且在加热元件的中间部分处突出到处理室侧并且位于加热元件附近或与加热元件接触的突起处形成在隔热材料。具有放大部分的销通过加热元件并且在加热元件的中间部分处的隔热件并且扩大部分位于加热元件附近或与加热元件接触。多个突起可以形成在绝热体上，并且销可以设置在这些多个突起之间。

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