会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 10. 发明授权
    • Method for forming resist pattern with enhanced contrast film
    • 用增强的对比膜形成抗蚀剂图案的方法
    • US5795700A
    • 1998-08-18
    • US604369
    • 1996-02-21
    • Jun HatakeyamaMitsuo UmemuraToshinobu IshiharaSatoshi Watanabe
    • Jun HatakeyamaMitsuo UmemuraToshinobu IshiharaSatoshi Watanabe
    • G03F7/26G03F7/09H01L21/027H01L21/30H01L21/47G03C5/00
    • G03F7/091
    • A resist pattern is formed on a substrate by forming a water-soluble resist film on the substrate, forming a contrast enhancing film on the resist film from a contrast enhancing composition comprising a specific arylnitrone compound of formula (1), pre-baking the resist film before or after formation of the contrast enhancing film, exposing the resist film to light through the contrast enhancing film, baking the films after exposure, removing the contrast enhancing film after the baking step, and developing the resist film. The process forms a resist pattern having a fully rectangular profile and an improved focus margin. The conventional apparatus can be utilized without substantial modification, achieving a cost reduction. ##STR1## wherein R.sup.1, R.sup.2, and R.sup.3 are independently an alkyl radical, an aryl radical or a hydrogen atom, R.sup.4 to R.sup.8 are independently an alkyl radical, a hydrogen atom or a carboxyl radical, at least one of R.sup.4 to R.sup.8 being a carboxyl radical, X is a hydrogen atom, an alkoxy radical represented by R.sup.9 O--, or a dialkylamino radical represented by R.sup.10 R.sup.11 N-- wherein R.sup.9 is an alkyl radical, R.sup.10 and R.sup.11 are independently an alkyl radical, and letter n ha a value of 0, 1 or 2.
    • 通过在基板上形成水溶性抗蚀剂膜,在抗蚀剂膜上形成对比度增强膜,从包含特定的式(1)的芳基硝酮化合物的对比度增强组合物形成抗蚀剂图案,预烘烤抗蚀剂 形成对比度增强膜之前或之后的膜,通过对比度增强膜将抗蚀剂膜曝光,在曝光后烘烤膜,在烘烤步骤之后除去对比度增强膜,并显影抗蚀剂膜。 该工艺形成具有完全矩形轮廓和改进的聚焦余量的抗蚀剂图案。 可以在不进行实质性修改的情况下利用传统的装置,从而实现成本降低。 (1)其中R1,R2和R3独立地是烷基,芳基或氢原子,R4至R8独立地是烷基,氢原子或羧基,R4至 R8是羧基,X是氢原子,由R9O-表示的烷氧基或由R10R11N-表示的二烷基氨基,其中R9是烷基,R10和R11独立地是烷基,并且字母n是一个值 为0,1或2。