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1. 发明授权

US06222195B1 Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US06222195B1
公开(公告)日：2001-04-24
申请号：US09637119
申请日：2000-08-11
申请人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
发明人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , G03F1/86 , H01J37/3045 , H01J37/3174 , H01J2237/2817 , H01J2237/31794
摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
摘要翻译：公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成在将带电粒子束暴露在物体上之前的带电粒子束的横截面。该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在使带电粒子束通过相同的孔之后，在包含与物体基本上在与物体相同的高度的表面上的标记的区域上扫描带电粒子束; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

2. 发明授权

US5830612A Method of detecting a deficiency in a charged-particle-beam exposure mask 失效
标题翻译：检测带电粒子束曝光掩模缺陷的方法
公开(公告)号：US5830612A
公开(公告)日：1998-11-03
申请号：US711935
申请日：1996-09-11
申请人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
发明人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
IPC分类号： G03F1/00 , G03F1/20 , H01J37/304 , H01J37/317 , G03F9/00 , G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/86 , H01J37/3045 , H01J37/3174 , G03F1/20 , H01J2237/2817 , H01J2237/31794
摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
摘要翻译：公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成在将带电粒子束暴露在物体上之前的带电粒子束的横截面。该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

3. 发明授权

US6137111A Charged particle-beam exposure device and charged-particle-beam exposure method 失效
标题翻译：带电粒子束曝光装置和带电粒子束曝光方法
公开(公告)号：US6137111A
公开(公告)日：2000-10-24
申请号：US84952
申请日：1998-05-28
申请人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
发明人： Akio Yamada , Satoru Sagou , Hitoshi Watanabe , Satoru Yamazaki , Kiichi Sakamoto , Manabu Ohno , Kenichi Kawakami , Katsuhiko Kobayashi
IPC分类号： G03F1/00 , G03F1/20 , H01J37/304 , H01J37/317 , G03F9/00 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/86 , H01J37/3045 , H01J37/3174 , G03F1/20 , H01J2237/2817 , H01J2237/31794
摘要： A method of detecting deficiency of an aperture used in a charged-particle-beam exposure process employing at least two exposure columns is disclosed, where each of the two exposure columns passes a charged-particle beam through the aperture formed through a mask to shape a cross section of the charged-particle beam before exposing the charged-particle beam onto an object. The method includes the steps of mounting masks having the same aperture to the at least two exposure columns; scanning, in each of the at least two exposure columns, the charged-particle beam over an area containing a mark on a surface substantially at the same height as the object after passing the charged-particle beam through the same aperture; obtaining, in each of the at least two exposure columns, a signal waveform corresponding to the scan by detecting charged particles scattered by the mark; and comparing the signal waveform between the at least two exposure columns.
摘要翻译：公开了一种检测在使用至少两个曝光柱的带电粒子束曝光工艺中使用的孔的缺陷的方法，其中两个曝光柱中的每一个通过带电粒子束穿过通过掩模形成的孔以形成在将带电粒子束暴露在物体上之前的带电粒子束的横截面。该方法包括以下步骤：将具有相同孔径的掩模安装到至少两个曝光柱; 在所述至少两个曝光柱中的每一个中，在将带电粒子束通过相同的孔之后，将包含在与物体基本上处于相同高度的表面上的标记的区域上的带电粒子束扫描; 在所述至少两个曝光列中的每一个中，通过检测由所述标记散射的带电粒子来获得对应于所述扫描的信号波形; 以及比较所述至少两个曝光列之间的信号波形。

4. 发明授权

US5391886A Charged particle beam exposure system and method of exposing a pattern on an object by such a charged particle beam exposure system 失效
标题翻译：带电粒子束曝光系统和通过这种带电粒子束曝光系统将图案曝光在物体上的方法
公开(公告)号：US5391886A
公开(公告)日：1995-02-21
申请号：US131670
申请日：1993-10-05
申请人： Akio Yamada , Yoshihisa Oae , Satoru Yamazaki , Tomohiko Abe , Katsuhiko Kobayashi , Kiichi Sakamoto , Junko Hatta
发明人： Akio Yamada , Yoshihisa Oae , Satoru Yamazaki , Tomohiko Abe , Katsuhiko Kobayashi , Kiichi Sakamoto , Junko Hatta
IPC分类号： H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174
摘要： A method of exposing a pattern on a substrate by a charged particle beam includes the steps of energizing first and second mask deflectors provided at an upstream side of a stencil mask simultaneously to obtain a first relativistic relationship of energization between the first and second mask deflectors, energizing the first mask deflector and simultaneously the second mask deflector according to the first relativistic relationship so as to hit a selected aperture on the stencil mask, to obtain an absolute deflection of the charged particle beam as a function of the energization of the first mask deflector, energizing third and fourth mask deflectors provided at a downstream side of the stencil mask simultaneously to obtain a second relativistic relationship of energization between the third and fourth mask deflectors, and energizing the first through fourth mask deflectors according to the first and second relativistic relationship and further to the absolute relationship, such that the charged particle beam is deflected away from an optical axis and hit a selected aperture on the stencil mask while traveling parallel to the optical axis, and such that the charged particle beam passed through the stencil mask is deflected toward the optical axis and deflected again such that the charged particle beam travels toward the substrate in alignment with the optical axis.
摘要翻译：通过带电粒子束在衬底上曝光图案的方法包括以下步骤：同时向在模板掩模的上游侧提供的第一和第二掩模偏转器同时激励，以获得第一和第二掩模偏转器之间的通电的第一相对论关系，激励第一掩模偏转器并且根据第一相对论关系同时施加第二掩模偏转器，以便击打模板掩模上的选定孔径，以获得作为第一掩模偏转器的通电的函数的带电粒子束的绝对偏转同时激励设置在模板掩模的下游侧的第三和第四掩模偏转器，以获得第三和第四掩模偏转器之间的通电的第二相对论关系，以及根据第一和第二相对论关系激励第一至第四掩模偏转器;以及进一步到绝对的关系，这样带电粒子束偏离光轴并且在平行于光轴移动的同时撞击模板掩模上的选定孔径，并且使得通过模板掩模的带电粒子束向光轴偏转并再次偏转带电粒子束与光轴对准地朝向衬底移动。

5. 发明授权

US5432314A Transparent mask plate for charged particle beam exposure apparatus and charged particle beam exposure process using the transparent mask plate 失效
标题翻译：用于带电粒子束曝光装置的透明掩模板和使用透明掩模板的带电粒子束曝光工艺
公开(公告)号：US5432314A
公开(公告)日：1995-07-11
申请号：US109263
申请日：1993-08-20
申请人： Satoru Yamazaki , Yoshihisa Oae , Kiichi Sakamoto , Akio Yamada
发明人： Satoru Yamazaki , Yoshihisa Oae , Kiichi Sakamoto , Akio Yamada
IPC分类号： G03F1/20 , G03F1/68 , G03F7/20 , G03F9/00 , H01J37/317 , H01L21/027 , H01J37/04
CPC分类号： B82Y10/00 , B82Y40/00 , G03F9/70 , H01J37/3174 , H01J2237/30438 , H01J2237/31788 , H01J2237/31794
摘要： A transparent mask plate used in a charged particle beam exposure apparatus includes a base plate, an exposure pattern area, and a calibration area. The exposure pattern area is formed in the base plate and has a plurality of transparent patterns for shaping a cross section of a charged particle beam into a block pattern. The calibration area is formed in the base plate, and has a plurality of transparent patterns used for obtaining a condition for deflecting the charged particle beam. The plurality of transparent patterns formed in the calibration area are arranged at the same pitch as the plurality of transparent patterns formed in the exposure pattern area. Each of the plurality of transparent patterns formed in the calibration area corresponds to one of the plurality of transparent patterns formed in the exposure pattern area.
摘要翻译：在带电粒子束曝光装置中使用的透明掩模板包括基板，曝光图案区域和校准区域。曝光图案区域形成在基板中，并且具有多个透明图案，用于将带电粒子束的横截面成形为块图案。校准区域形成在基板中，并且具有用于获得用于偏转带电粒子束的条件的多个透明图案。形成在校准区域中的多个透明图案以与形成在曝光图案区域中的多个透明图案相同的间距排列。形成在校准区域中的多个透明图案中的每一个对应于在曝光图案区域中形成的多个透明图案中的一个。

6. 发明授权

US5841145A Method of and system for exposing pattern on object by charged particle beam 失效
标题翻译：通过带电粒子束对物体曝光图案的方法和系统
公开(公告)号：US5841145A
公开(公告)日：1998-11-24
申请号：US610350
申请日：1996-03-04
申请人： Takamasa Satoh , Yoshihisa Oae , Soichiro Arai , Kenichi Miyazawa , Hiroshi Yasuda , Manabu Ohno , Hitoshi Watanabe , Junichi Kai , Tomohiko Abe , Akio Yamada , Yasushi Takahashi
发明人： Takamasa Satoh , Yoshihisa Oae , Soichiro Arai , Kenichi Miyazawa , Hiroshi Yasuda , Manabu Ohno , Hitoshi Watanabe , Junichi Kai , Tomohiko Abe , Akio Yamada , Yasushi Takahashi
IPC分类号： H01J37/302
CPC分类号： H01J37/3023 , H01J2237/3175
摘要： By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+�RA.multidot.i! (A0 and i are integers, � ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction. Before figures data are expanded into bit map, a checksum is determined in units of bit map data corresponding to the range of one session of scanning over which continuous exposure is possible. A sine wave voltage is provided to an electrostatic deflector and during a one-shot exposure period, an electron beam is caused to scan for an integer number of times on a block of a mask and the positional misalignment of the electron beam at the lower aperture stop is corrected.
摘要翻译：通过使用消隐孔径阵列BAA，相邻区域连接的部分中的位图数据的密度朝向外部减小。在BAA芯片的保持器的下表面上形成布线到消隐电极的球栅阵列，以与接线基板上的焊盘压接。从地址A = A0 + [RAxi]（A0和i是整数，[]是整数化的运算符）读出等腰直角三角形的注册位图数据，被屏蔽，然后移位以变形。从用于邻近效应校正的注册位图数据中，提取对应于校正对象的大小的区域和所需的邻近度影响校正程度，并且执行校正对象的位图数据的逻辑运算以实现近距离影响校正。在将图形数据扩展为位图之前，以对应于可能进行连续曝光的一次扫描会话的范围的位图数据为单位确定校验和。向静电偏转器提供正弦波电压，并且在单次曝光期间，使电子束在掩模块上扫描整数次，并且使电子束在下孔处的位置偏移停止更正。

7. 发明授权

US5965895A Method of providing changed particle beam exposure in which representative aligning marks on an object are detected to calculate an actual position to perform exposure 失效
标题翻译：提供改变的粒子束曝光的方法，其中检测到物体上的代表性对准标记以计算实际曝光的位置
公开(公告)号：US5965895A
公开(公告)日：1999-10-12
申请号：US964331
申请日：1997-11-04
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.
摘要翻译：一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

8. 发明授权

US5546319A Method of and system for charged particle beam exposure 失效
标题翻译：带电粒子束曝光的方法和系统
公开(公告)号：US5546319A
公开(公告)日：1996-08-13
申请号：US379712
申请日：1995-01-27
申请人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
发明人： Takamasa Satoh , Hiroshi Yasuda , Junichi Kai , Yoshihisa Oae , Hisayasu Nishino , Kiichi Sakamoto , Hidefumi Yabara , Isamu Seto , Masami Takigawa , Akio Yamada , Soichiro Arai , Tomohiko Abe , Takashi Kiuchi , Kenichi Miyazawa
IPC分类号： H01J37/153 , H01J37/302 , H01J37/317 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/153 , H01J37/3174 , H01J2237/1504
摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
摘要翻译：为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化，通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标在晶片区域和芯片区域中的转换。为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

9. 发明授权

US5276334A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5276334A
公开(公告)日：1994-01-04
申请号：US916750
申请日：1992-07-22
申请人： Akio Yamada , Kiichi Sakamoto , Kenichi Kawashima
发明人： Akio Yamada , Kiichi Sakamoto , Kenichi Kawashima
IPC分类号： H01L21/027 , H01J37/317 , H01L21/30 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/30411 , H01J2237/31776
摘要： A charged particle beam exposure method includes the steps of (a) selectively irradiating a charged particle beam on at least one selected opening forming a selected pattern of a mask which includes a plurality of openings related to a plurality of kinds of patterns so as to shape a cross section of the charged particle beam which is transmitted through the selected opening, where the area of the mask is divided into a plurality of blocks each including at least one opening which is related to one pattern, and (b) irradiating the charged particle beam which is transmitted through the selected opening of the mask onto an object surface so as to expose a desired pattern corresponding to at least a part of the pattern of the selected opening on the object surface, where the step (a) carries out first and second deflections independently of each other with respect to the charged particle beam. The first deflection deflects the charged particle beam within a first deflection range which corresponds to the size of one block and the second deflection deflects the charged particle beam within a second irradiating range which covers a plurality of blocks of the mask, so that the second deflection deflects the charged particle beam to irradiate the selected opening out of the plurality of openings of the mask and the first deflection sets the first deflection range of the charged particle beam with respect to the selected opening.
摘要翻译：带电粒子束曝光方法包括以下步骤：（a）在至少一个选定的开口上选择性地照射带电粒子束，所述至少一个选择的开口形成掩模的选定图案，所述图案包括与多种图案相关的多个开口以形成所述带电粒子束的透射通过所述选择的开口的横截面，其中所述掩模的面积被分成多个块，每个块包括与一个图案相关的至少一个开口，以及（b）照射所述带电粒子光束，其通过掩模的所选择的开口透射到物体表面上，以暴露与物体表面上的所选择的开口的图案的至少一部分的至少一部分相对应的期望图案，其中步骤（a）首先执行，相对于带电粒子束彼此独立的第二偏转。第一偏转将带电粒子束偏转在对应于一个块的尺寸的第一偏转范围内，并且第二偏转使带电粒子束在覆盖掩模的多个块的第二照射范围内偏转，使得第二偏转使带电粒子束偏转以将所选择的开口照射到掩模的多个开口中，并且第一偏转相对于所选择的开口设置带电粒子束的第一偏转范围。

10. 发明授权

US5260579A Charged particle beam exposure system and charged particle beam exposure method 失效
标题翻译：带电粒子束曝光系统和带电粒子束曝光方法
公开(公告)号：US5260579A
公开(公告)日：1993-11-09
申请号：US851400
申请日：1992-03-13
申请人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
发明人： Hiroshi Yasuda , Yasushi Takahashi , Kiichi Sakamoto , Akio Yamada , Yoshihisa Oae , Junichi Kai , Shunsuke Fueki , Kenichi Kawashima
IPC分类号： H01J37/09 , H01J37/317 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/3177 , H01J2237/0435
摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

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