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    • 1. 发明申请
    • Flexible Light-Emitting Device, and Method for Fabricating the Same
    • 柔性发光装置及其制造方法
    • US20100045919A1
    • 2010-02-25
    • US12538975
    • 2009-08-11
    • Akihiro ChidaKaoru HatanoTakaaki NagataSatoshi Seo
    • Akihiro ChidaKaoru HatanoTakaaki NagataSatoshi Seo
    • G02F1/1345H01L33/00
    • H01L27/1266H01L27/1225H01L27/124H01L27/1248H01L27/3244H01L27/3248H01L27/3276H01L51/56H01L2227/326H01L2251/5338
    • Provided is a flexible light-emitting device including: a base insulating film; a thin film transistor formed over a first surface of the base insulating film; an interlayer insulating film formed over the first surface of the base insulating film with the thin film transistor interposed therebetween; a first pixel electrode formed on a second surface of the base insulating film opposite to the first surface; an electroluminescent layer formed on the second surface of the base insulating film with the first pixel electrode interposed therebetween; a second pixel electrode formed on the second surface of the base insulating film with the first pixel electrode and the electroluminescent layer interposed therebetween; and a wiring electrically connected to a semiconductor layer of the thin film transistor in a contact hole provided in the interlayer insulating film and electrically connected to the first pixel electrode in a through-hole penetrating through at least the interlayer insulating film and the base insulating film.
    • 提供一种柔性发光装置,包括:基底绝缘膜; 形成在所述基底绝缘膜的第一表面上的薄膜晶体管; 在所述基底绝缘膜的所述第一表面上形成有夹在其间的薄膜晶体管的层间绝缘膜; 形成在与第一表面相对的基底绝缘膜的第二表面上的第一像素电极; 形成在所述基底绝缘膜的第二表面上的电致发光层,其间插入有所述第一像素电极; 形成在所述基底绝缘膜的所述第二表面上的第二像素电极,其间插入有所述第一像素电极和所述电致发光层; 以及布线,电连接到所述薄膜晶体管的半导体层,所述接触孔设置在所述层间绝缘膜中,并且至少贯穿至少所述层间绝缘膜和所述基底绝缘膜的通孔中与所述第一像素电极电连接 。
    • 2. 发明授权
    • Flexible light-emitting device, and method for fabricating the same
    • 柔性发光装置及其制造方法
    • US08284369B2
    • 2012-10-09
    • US12538975
    • 2009-08-11
    • Akihiro ChidaKaoru HatanoTakaaki NagataSatoshi Seo
    • Akihiro ChidaKaoru HatanoTakaaki NagataSatoshi Seo
    • G02F1/1345B60Q1/14H01L21/00
    • H01L27/1266H01L27/1225H01L27/124H01L27/1248H01L27/3244H01L27/3248H01L27/3276H01L51/56H01L2227/326H01L2251/5338
    • Provided is a flexible light-emitting device including: a base insulating film; a thin film transistor formed over a first surface of the base insulating film; an interlayer insulating film formed over the first surface of the base insulating film with the thin film transistor interposed therebetween; a first pixel electrode formed on a second surface of the base insulating film opposite to the first surface; an electroluminescent layer formed on the second surface of the base insulating film with the first pixel electrode interposed therebetween; a second pixel electrode formed on the second surface of the base insulating film with the first pixel electrode and the electroluminescent layer interposed therebetween; and a wiring electrically connected to a semiconductor layer of the thin film transistor in a contact hole provided in the interlayer insulating film and electrically connected to the first pixel electrode in a through-hole penetrating through at least the interlayer insulating film and the base insulating film.
    • 提供一种柔性发光装置,包括:基底绝缘膜; 形成在所述基底绝缘膜的第一表面上的薄膜晶体管; 在所述基底绝缘膜的所述第一表面上形成有夹在其间的薄膜晶体管的层间绝缘膜; 形成在与第一表面相对的基底绝缘膜的第二表面上的第一像素电极; 形成在所述基底绝缘膜的第二表面上的电致发光层,其间插入有所述第一像素电极; 形成在所述基底绝缘膜的所述第二表面上的第二像素电极,其间插入有所述第一像素电极和所述电致发光层; 以及布线,电连接到所述薄膜晶体管的半导体层,所述接触孔设置在所述层间绝缘膜中,并且至少贯穿至少所述层间绝缘膜和所述基底绝缘膜的通孔中与所述第一像素电极电连接 。
    • 9. 发明申请
    • Light-Emitting Device and Method for Manufacturing the Same
    • 发光装置及其制造方法
    • US20100248403A1
    • 2010-09-30
    • US12729487
    • 2010-03-23
    • Kaoru HatanoTakaaki NagataTakuya Tsurume
    • Kaoru HatanoTakaaki NagataTakuya Tsurume
    • H01L51/56
    • H01L51/56H01L27/3211H01L27/3246H01L2227/323H01L2227/326
    • In a manufacturing method of a light-emitting device, a separation layer is formed over a substrate; a semiconductor circuit element layer and first electrodes are formed over the separation layer; a partition wall overlapping with end portions of the first electrodes is formed; and organic material layers are formed over the first electrodes. Organic material layers emitting light of the same color are arranged adjacent to each other in a line and extend in a first direction. A second electrode is formed using a material having high adhesiveness to the partition wall over the organic material layers to be in contact with the partition wall. A stack structure including the semiconductor circuit element layer, the first electrodes, the partition wall, the organic material layers, and the second electrode is separated from the substrate using the separation layer in a second direction perpendicular to the first direction.
    • 在发光装置的制造方法中,在基板上形成分离层, 半导体电路元件层和第一电极形成在分离层上; 形成与第一电极的端部重叠的分隔壁; 并且在第一电极上形成有机材料层。 发射相同颜色的光的有机材料层以一条线彼此相邻布置并沿第一方向延伸。 第二电极使用与有机材料层上的隔壁具有高粘合性的材料形成,以与分隔壁接触。 在垂直于第一方向的第二方向上,使用分离层将包括半导体电路元件层,第一电极,分隔壁,有机材料层和第二电极的堆叠结构与基板分离。
    • 10. 发明授权
    • Light-emitting device and method for manufacturing the same
    • 发光装置及其制造方法
    • US08372668B2
    • 2013-02-12
    • US12729487
    • 2010-03-23
    • Kaoru HatanoTakaaki NagataTakuya Tsurume
    • Kaoru HatanoTakaaki NagataTakuya Tsurume
    • H01L21/00
    • H01L51/56H01L27/3211H01L27/3246H01L2227/323H01L2227/326
    • In a manufacturing method of a light-emitting device, a separation layer is formed over a substrate; a semiconductor circuit element layer and first electrodes are formed over the separation layer; a partition wall overlapping with end portions of the first electrodes is formed; and organic material layers are formed over the first electrodes. Organic material layers emitting light of the same color are arranged adjacent to each other in a line and extend in a first direction. A second electrode is formed using a material having high adhesiveness to the partition wall over the organic material layers to be in contact with the partition wall. A stack structure including the semiconductor circuit element layer, the first electrodes, the partition wall, the organic material layers, and the second electrode is separated from the substrate using the separation layer in a second direction perpendicular to the first direction.
    • 在发光装置的制造方法中,在基板上形成分离层, 半导体电路元件层和第一电极形成在分离层上; 形成与第一电极的端部重叠的分隔壁; 并且在第一电极上形成有机材料层。 发射相同颜色的光的有机材料层以一条线彼此相邻布置并沿第一方向延伸。 第二电极使用与有机材料层上的隔壁具有高粘合性的材料形成,以与分隔壁接触。 在垂直于第一方向的第二方向上,使用分离层将包括半导体电路元件层,第一电极,分隔壁,有机材料层和第二电极的堆叠结构与基板分离。