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1. 发明授权

US07743358B2 Apparatus and method for segmenting edges for optical proximity correction 有权
标题翻译：用于光学邻近校正的边缘分割的装置和方法
公开(公告)号：US07743358B2
公开(公告)日：2010-06-22
申请号：US11203498
申请日：2005-08-13
申请人： Abdurrahman Sezginer , Bayram Yenikaya , Hsu-Ting Huang
发明人： Abdurrahman Sezginer , Bayram Yenikaya , Hsu-Ting Huang
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译：用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。

2. 发明申请

US20060248496A1 Apparatus and method for segmenting edges for optical proximity correction 有权
标题翻译：用于光学邻近校正的边缘分割的装置和方法
公开(公告)号：US20060248496A1
公开(公告)日：2006-11-02
申请号：US11203498
申请日：2005-08-13
申请人： Abdurrahman Sezginer , Bayram Yenikaya , Hsu-Ting Huang
发明人： Abdurrahman Sezginer , Bayram Yenikaya , Hsu-Ting Huang
IPC分类号： G06F17/10
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译：用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。

3. 发明授权

US08122389B2 Apparatus and method for segmenting edges for optical proximity correction 有权
标题翻译：用于光学邻近校正的边缘分割的装置和方法
公开(公告)号：US08122389B2
公开(公告)日：2012-02-21
申请号：US12690791
申请日：2010-01-20
申请人： Abdurrahman Sezginer , Bayram Yenikaya , Hsu-Ting Huang
发明人： Abdurrahman Sezginer , Bayram Yenikaya , Hsu-Ting Huang
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An apparatus and method for modifying a mask data set includes calculating a derivative of a figure-of-merit, indicative of a data set defined by a plurality of polygon edges and then segmenting polygon edges in response to said step of calculating.
摘要翻译：用于修改掩模数据集的装置和方法包括计算表示由多个多边形边界定义的数据集的品质因数的导数，然后响应于所述计算步骤来分割多边形边缘。

4. 发明授权

US07568174B2 Method for checking printability of a lithography target 失效
标题翻译：用于检查光刻目标的可印刷性的方法
公开(公告)号：US07568174B2
公开(公告)日：2009-07-28
申请号：US11504928
申请日：2006-08-16
申请人： Abdurrahman Sezginer , Bayram Yenikaya
发明人： Abdurrahman Sezginer , Bayram Yenikaya
IPC分类号： G06F17/50
CPC分类号： G03F7/70441 , G03F1/36 , G03F7/705
摘要： A technique for determining, without having to perform optical proximity correction, when the result of optical proximity correction will fail to meet the design requirements for printability. A disclosed embodiment has application to a process for producing a photomask for use in the printing of a pattern on a wafer by exposure with optical radiation to optically image the photomask on the wafer. A method is set forth for checking the printability of a target layout proposed for defining the photomask, including the following steps: deriving a system of inequalities that expresses a set of design requirements with respect to the target layout; and checking the printability of the target layout by determining whether the system of inequalities is feasible.
摘要翻译：当光学邻近校正的结果不能满足可印刷性的设计要求时，确定无需进行光学邻近校正的技术。所公开的实施例应用于制造光掩模的方法，该光掩模用于通过用光辐射曝光来在晶片上印刷图案以将晶片上的光掩模光学成像。提出了一种用于检查建议用于定义光掩模的目标布局的可印刷性的方法，包括以下步骤：导出表示相对于目标布局的一组设计要求的不等式系统; 并通过确定不等式系统是否可行来检查目标布局的可印刷性。

5. 发明授权

US07913197B1 Method for double patterning lithography 有权
标题翻译：双重图案光刻的方法
公开(公告)号：US07913197B1
公开(公告)日：2011-03-22
申请号：US12035413
申请日：2008-02-21
申请人： Michiel Victor Paul Kruger , Bayram Yenikaya , Anwei Liu , Abdurrahman Sezginer , Wolf Staud
发明人： Michiel Victor Paul Kruger , Bayram Yenikaya , Anwei Liu , Abdurrahman Sezginer , Wolf Staud
IPC分类号： G06F17/50 , G06F19/00 , G03F1/00 , G21K5/00
CPC分类号： G03F7/70466 , G03F7/70475
摘要： According to various embodiments of the invention systems and methods for multiple pattern lithography, wherein a target layout pattern that is not capable of being printed in one lithography step is decomposed into multiple patterns that are printable in one lithography operation and, when appropriate, a continuous junction is utilized for where patterns overlap. In a further embodiment, where a continuous junction is not utilized, a splice is utilized at overlap locations. In yet another embodiment, where splices are utilized for overlap locations, identifying where critical nets are located in the target layout pattern, determining how close a component of the critical net is to a splice, and changing the target layout pattern as to avoid the condition of a component of the critical net being in proximity to a splice. In another embodiment of the invention, where splices are utilized at overlap locations, placing a landing pad of contacts or vias at the same location as the splice.
摘要翻译：根据本发明的各种实施例，用于多图案光刻的系统和方法，其中不能在一个光刻步骤中打印的目标布局图案被分解成可在一个光刻操作中可打印的多个图案，并且在适当时将其连续结点用于图案重叠的位置。在另一实施例中，在不使用连续结的情况下，在重叠位置处使用接头。在另一个实施例中，其中接头用于重叠位置，识别关键网位于目标布局图案中的位置，确定关键网络的部件对拼接有多接近，并且改变目标布局图案以避免条件关键网的组件位于接头附近。在本发明的另一个实施例中，其中在重叠位置处使用接头时，将接触点或通孔的接合垫放置在与接头相同的位置处。

6. 发明申请

US20070143733A1 Method of compensating photomask data for the effects of etch and lithography processes 有权
标题翻译：补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响
公开(公告)号：US20070143733A1
公开(公告)日：2007-06-21
申请号：US11541921
申请日：2006-10-02
申请人： Franz Zach , Jesus Carrero , Bayram Yenikaya , Gokhan Percin , Xuelong Cao , Abdurrahman Sezginer
发明人： Franz Zach , Jesus Carrero , Bayram Yenikaya , Gokhan Percin , Xuelong Cao , Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.
摘要翻译：一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

7. 发明授权

US07849423B1 Method of verifying photomask data based on models of etch and lithography processes 有权
标题翻译：基于蚀刻和光刻工艺的模型验证光掩模数据的方法
公开(公告)号：US07849423B1
公开(公告)日：2010-12-07
申请号：US11781108
申请日：2007-07-20
申请人： Bayram Yenikaya , Devendra Joshi , Paul A. Fornari , Jesus O. Carrero , Abdurrahman Sezginer
发明人： Bayram Yenikaya , Devendra Joshi , Paul A. Fornari , Jesus O. Carrero , Abdurrahman Sezginer
IPC分类号： G06F17/50 , G06F9/45
CPC分类号： G03F1/36
摘要： A photomask dataset corresponding to a target-pattern is verified by simulating a resist-pattern that will be formed in a resist layer by a lithography process, simulating an etched-pattern that will be etched in a layer by a plasma process wherein said simulation comprises calculating a flux of particles impacting a feature, and determining whether the etched-pattern substantially conforms to the target-pattern.
摘要翻译：通过模拟通过光刻工艺在抗蚀剂层中形成的抗蚀剂图案来模拟对应于目标图案的光掩模数据集，模拟将通过等离子体工艺在层中蚀刻的蚀刻图案，其中所述模拟包括计算影响特征的颗粒的通量，以及确定蚀刻图案是否基本上符合目标图案。

8. 发明授权

US07600212B2 Method of compensating photomask data for the effects of etch and lithography processes 有权
标题翻译：补偿光掩模数据的方法，用于蚀刻和光刻工艺的影响
公开(公告)号：US07600212B2
公开(公告)日：2009-10-06
申请号：US11541921
申请日：2006-10-02
申请人： Franz X. Zach , Jesus Carrero , Bayram Yenikaya , Gokhan Percin , Xuelong Cao , Abdurrahman Sezginer
发明人： Franz X. Zach , Jesus Carrero , Bayram Yenikaya , Gokhan Percin , Xuelong Cao , Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for synthesizing a photomask data set from a given target layout, including the following steps: (a) providing a set of target polygons for the target layout; (b) fitting a smooth curve to a target polygon of the set of target polygons, the curve having a set of etch-target points; (c) moving the etch target points according to a model of an etch process to produce a set of lithography-target points; and (d) synthesizing a photomask data set based on a model of a lithography process and the set of lithography-target points.
摘要翻译：一种用于从给定目标布局合成光掩模数据集的方法，包括以下步骤：（a）为目标布局提供一组目标多边形; （b）将平滑曲线拟合到所述目标多边形集合的目标多边形，所述曲线具有一组蚀刻目标点; （c）根据蚀刻工艺的模型移动蚀刻目标点以产生一组光刻目标点; 以及（d）基于光刻工艺的模型和所述一组光刻目标点合成光掩模数据集。

9. 发明授权

US07230704B2 Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay 有权
$Diffracting, aperiodic targets for overlay metrology and method to detect gross overlay$
标题翻译：用于覆盖计量的衍射，非周期性目标和检测总重叠的方法
公开(公告)号：US07230704B2
公开(公告)日：2007-06-12
申请号：US10858691
申请日：2004-06-02
申请人： Abdurrahman Sezginer , Hsu-Ting Huang , Kenneth Johnson
发明人： Abdurrahman Sezginer , Hsu-Ting Huang , Kenneth Johnson
IPC分类号： G01B11/00
CPC分类号： G03F7/70633 , G01N21/4788
摘要： A method for measuring overlay in semiconductor wafers includes a calibration phase in which a series of calibration samples are analyzed. Each calibration sample has an overlay that is known to be less than a predetermined limit. A difference spectrum for a pair of reflectively symmetric overlay targets is obtained for each calibration sample. The difference spectra are then combined to define a gross overlay indicator. In subsequent measurements of actual wafers, difference spectra are compared to the overlay indicator to detect cases of gross overlay.
摘要翻译：用于测量半导体晶片中覆盖层的方法包括其中分析一系列校准样本的校准阶段。每个校准样品具有已知小于预定极限的覆盖层。对于每个校准样品，获得一对反射对称覆盖目标的差分谱。然后组合差分谱以定义总重叠指示符。在随后的实际晶片测量中，将差分光谱与覆盖指示符进行比较，以检测总重叠的情况。

10. 发明申请

US20060248497A1 Apparatus and method for compensating a lithography projection tool 有权
公开(公告)号：US20060248497A1
公开(公告)日：2006-11-02
申请号：US11203329
申请日：2005-08-13
申请人： Hsu-Ting Huang , Abdurrahman Sezginer
发明人： Hsu-Ting Huang , Abdurrahman Sezginer
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/44
摘要： An apparatus and method of compensating for lens imperfections in a projection lithography tool, includes extracting from a diffraction image created by the projection lithography tool a lens transmittance function, and then using the extracted lens transmittance function as a compensator in the lithography projection tool. Another preferred apparatus and method of synthesizing a photomask pattern includes obtaining a phase and an amplitude of a transmittance function of an imaging system; forming a computational model of patterning that includes the transmittance function of the imaging system; and then synthesizing a mask pattern from a given target pattern, by minimizing differences between the target pattern and another pattern that the computational model predicts the synthesized mask pattern will form on a wafer.

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