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1. 发明申请

WO2006014565A1 DEVICE AND METHOD FOR MEASUREMENT OF BEAM ANGLE AND DIVERGENCE NORMAL TO PLANE OF SCANNED BEAM OR RIBBON BEAM 审中-公开
标题翻译：用于测量光束角度和波长的波长的方法和方法正常到扫描光束或RIBBON光束的平面
公开(公告)号：WO2006014565A1
公开(公告)日：2006-02-09
申请号：PCT/US2005/024162
申请日：2005-07-07
申请人： AXCELIS TECHNOLOGIES, INC. , RATHMELL, Robert , BROWN, Douglas , RAY, Andrew
发明人： RATHMELL, Robert , BROWN, Douglas , RAY, Andrew
IPC分类号： H01J37/317 , H01J37/304 , H01J37/244
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/24507 , H01J2237/24528 , H01J2237/31703
摘要： The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask (310) and profiler/sensor (314) is employed to obtain beamlets (312) from the incoming ion beam (308) and then to measure beam current at a number of vertical positions (316, 318). These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.
摘要翻译：本发明通过获得垂直于扫描光束的平面的离子束的入射角和发散角来促进半导体器件的制造。使用包括掩模（310）和轮廓仪/传感器（314）的发散检测器从入射离子束（308）获得小束（312），然后测量多个垂直位置（316,318）处的束电流。然后使用这些射束电流测量来提供垂直入射角，其提供用于表征离子束的垂直发散分布。这些值可以由离子束产生机构使用，以对所产生的离子束或工件的位置执行调整，如果值表示偏离期望值。

2. 发明申请

WO2006033834A2 IMPROVED ION BEAM UTILIZATION DURING SCANNED ION IMPLANTATION 审中-公开
标题翻译：扫描离子注入改进离子束利用率
公开(公告)号：WO2006033834A2
公开(公告)日：2006-03-30
申请号：PCT/US2005/031855
申请日：2005-09-08
申请人： AXCELIS TECHNOLOGIES, INC. , GRAF, Michael , RAY, Andrew
发明人： GRAF, Michael , RAY, Andrew
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/302 , H01J2237/20228 , H01J2237/30488
摘要： The present invention is directed to implanting ions in a workpiece in a serial implantation process in a manner that produces a scan pattern that resembles the size, shape and/or other dimensional aspects of the workpiece. This improves efficiency and yield as an ion beam that the workpiece is oscillated through does not significantly "overshoot" the workpiece. The scan pattern may be slightly larger than the workpiece, however, so that inertial effects associated with changes in direction, velocity and/or acceleration of the workpiece as the workpiece reverses direction in oscillating back and forth are accounted for within a small amount of "overshoot". This facilitates moving the workpiece through the ion beam at a relatively constant velocity which in turn facilitates substantially more uniform ion implantation.
摘要翻译：本发明涉及以产生类似于工件的尺寸，形状和/或其他尺寸方面的扫描图案的方式在串联注入工艺中将离子注入到工件中。这提高了作为工件摆动通过的离子束的效率和产量，并不显着“过冲” 工件。然而，扫描图案可以略大于工件，使得随着工件反转方向来回振荡而与工件的方向，速度和/或加速度相关的惯性效应在少量的“ ;过冲＆QUOT ;. 这有助于以相对恒定的速度移动工件通过离子束，从而有利于实现更均匀的离子注入。

3. 发明申请

WO2006063102A3 METHOD OF CORRECTION FOR WAFER CRYSTAL CUT ERROR IN SEMICONDUCTOR PROCESSING 审中-公开
公开(公告)号：WO2006063102A3
公开(公告)日：2006-06-15
申请号：PCT/US2005/044363
申请日：2005-12-08
申请人： AXCELIS TECHNOLOGIES, INC. , RAY, Andrew
发明人： RAY, Andrew
IPC分类号： H01J37/317 , H01L21/265
摘要： The present invention is directed to accounting for crystal cut error data in ion implantation systems, thereby facilitating more accurate ion implantation. One or more aspects of the invention also consider possible shadowing effects that can result from features formed on the surface of a wafer being doped. According to one or more aspects of the invention, crystal cut error data and optionally feature data also are periodically fed forward in one or more ion implantation stages or systems to ascertain how to re-orient the ion beam with respect to the workpiece to achieve desired implantation results.

4. 发明申请

WO2006060124A2 OPTIMIZATION OF BEAM UTILIZATION 审中-公开
标题翻译：光束利用优化
公开(公告)号：WO2006060124A2
公开(公告)日：2006-06-08
申请号：PCT/US2005/040452
申请日：2005-11-08
申请人： AXCELIS TECHNOLOGIES, INC. , RAY, Andrew , GRAF, Michael
发明人： RAY, Andrew , GRAF, Michael
IPC分类号： H01L21/265 , H01J37/317
CPC分类号： H01L21/265 , H01J37/3023 , H01J37/3171 , H01J2237/20228 , H01J2237/20285 , H01J2237/30411
摘要： A method for optimizing an ion implantation, wherein a substrate is scanned in two dimensions through an ion beam. The method provides a process recipe comprising one or more of a current of an ion beam, a dosage of ions, and a number of substrate passes through the beam in a slow scan direction. The beam is profiled based on the process recipe, and a size of the beam is determined. One of a plurality of differing scan speeds in a fast scan direction is selected, based on a desired uniformity of the implantation and the process recipe. The process recipe is controlled, based on one or more of the desired uniformity, a throughput time for the substrate, a desired minimum ion beam current, and one or more substrate conditions. One of a plurality of speeds in a slow scan direction is selected, based on the dosage of the implantation.
摘要翻译：一种用于优化离子注入的方法，其中通过离子束在二维中扫描基底。该方法提供了包括离子束的电流，离子的剂量和数量的衬底中的一种或多种在慢扫描方向上通过光束的工艺配方。根据工艺配方对梁进行成型，确定梁的尺寸。基于植入和工艺配方的期望均匀性，选择快速扫描方向上的多个不同扫描速度之一。基于所需的均匀性，基底的生产时间，期望的最小离子束电流和一个或多个基底条件中的一个或多个来控制工艺配方。基于植入的剂量来选择慢扫描方向上的多个速度之一。

5. 发明申请

WO2014055182A1 IMPLANT-INDUCED DAMAGE CONTROL IN ION IMPLANTATION 审中-公开
标题翻译：植入物中的植入物诱导的损伤控制
公开(公告)号：WO2014055182A1
公开(公告)日：2014-04-10
申请号：PCT/US2013/057266
申请日：2013-10-30
申请人： AXCELIS TECHNOLOGIES, INC. , REECE, Ronald , KONDRATENKO, Serguei , SATOH, Shu , RAY, Andrew
发明人： REECE, Ronald , KONDRATENKO, Serguei , SATOH, Shu , RAY, Andrew
IPC分类号： H01J37/304 , H01J37/317
CPC分类号： H01L22/26 , C23C14/48 , H01J37/304 , H01J37/3171 , H01J2237/30455 , H01J2237/30472 , H01J2237/31703 , H01L2924/0002 , H01L2924/00
摘要： An ion implantation system is provided having an ion implantation apparatus configured to provide a spot ion beam having a beam density to a workpiece, wherein the workpiece has a crystalline structure associated therewith. A scanning system iteratively scans one or more of the spot ion beam and workpiece with respect to one another along one or more axes. A controller is also provided and configured to establish a predetermined localized temperature of the workpiece as a predetermined location on the workpiece is exposed to the spot ion beam. A predetermined localized disorder of the crystalline structure of the workpiece is thereby achieved at the predetermined location, wherein the controller is configured to control one or more of the beam density of the spot ion beam and a duty cycle associated with the scanning system to establish the localized temperature of the workpiece at the predetermined location on the workpiece.
摘要翻译：提供了离子注入系统，其具有被配置为向工件提供具有束密度的点离子束的离子注入装置，其中工件具有与其相关联的晶体结构。扫描系统沿着一个或多个轴线相对于彼此迭代扫描一个或多个点离子束和工件。还提供控制器并且构造成当工件上的预定位置暴露于点离子束时，建立工件的预定局部温度。因此，在预定位置处实现了工件的晶体结构的预定的局部混乱，其中控制器被配置为控制点离子束的束密度中的一个或多个以及与扫描系统相关联的占空比，以建立工件在工件上预定位置的局部温度。

6. 发明申请

WO2006107726A1 METHOD OF MEASURING BEAM ANGLE 审中-公开
标题翻译：测量光束角度的方法
公开(公告)号：WO2006107726A1
公开(公告)日：2006-10-12
申请号：PCT/US2006/011788
申请日：2006-03-31
申请人： AXCELIS TECHNOLOGIES, INC. , RAY, Andrew
发明人： RAY, Andrew
IPC分类号： H01J37/304
CPC分类号： H01J37/244 , H01J37/304 , H01J37/3045 , H01J37/3171 , H01J2237/24405 , H01J2237/24507 , H01J2237/24528 , H01J2237/24542 , H01J2237/30405 , H01J2237/30411 , H01J2237/31701 , H01J2237/31703
摘要： A system, apparatus, and method for determining two angles of incidence of an ion beam (110) to a surface of a workpiece is provided. A measurement apparatus (104) having an elongate first (202) and second sensor (204) is coupled to a translation mechanism (140) , wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller (106) is operable to determine a first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.
摘要翻译：提供了一种用于确定离子束（110）到工件表面的两个入射角的系统，装置和方法。具有细长的第一（202）和第二传感器（204）的测量装置（104）联接到平移机构（140），其中第一传感器沿垂直于平移的第一方向延伸，并且其中第二传感器与第一传感器倾斜的角度。当第一和第二传感器在相应的第一时间和第二时间通过离子束时，第一和第二细长传感器感测离子束的一个或多个特性，并且控制器（106）可操作以确定第一和第二至少部分地基于由第一传感器和第二传感器在第一次和第二次感测的离子束的一个或多个特性的离子束的入射角。

7. 发明申请

WO2005124817A1 ION BEAM SCANNING SYSTEMS AND METHODS FOR IMPROVED ION IMPLANTATION UNIFORMITY 审中-公开
标题翻译：离子束扫描系统和改进离子植入均匀性的方法
公开(公告)号：WO2005124817A1
公开(公告)日：2005-12-29
申请号：PCT/US2005/019760
申请日：2005-06-06
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , RAY, Andrew , WENZEL, Kevin
发明人： VANDERBERG, Bo , RAY, Andrew , WENZEL, Kevin
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/21
摘要： Ion implantation systems and scanning systems therefor, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.
摘要翻译：离子注入系统及其扫描系统，其中提供焦点调节装置以动态调整离子束的聚焦特性以补偿扫描仪的至少一个时变焦特性。用于向工件提供扫描离子束的方法，包括动态地调整离子束的聚焦特性，扫描离子束以产生扫描的离子束，以及将扫描的离子束引向工件。

8. 发明公开

EP1766654A1 ION BEAM SCANNING SYSTEMS AND METHODS FOR IMPROVED ION IMPLANTATION UNIFORMITY 审中-公开
标题翻译：为了改善离子注入均匀性离子束扫描和方法
公开(公告)号：EP1766654A1
公开(公告)日：2007-03-28
申请号：EP05758662.0
申请日：2005-06-06
申请人： Axcelis Technologies, Inc.
发明人： VANDERBERG, Bo , RAY, Andrew , WENZEL, Kevin
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/21
摘要： Ion implantation systems and scanning systems therefor, in which focus adjustment apparatus is provided to dynamically adjust a focal property of an ion beam to compensate for at least one time varying focal property of a scanner. Methods for providing a scanned ion beam to a workpiece, comprising dynamically adjusting a focal property of an ion beam, scanning the ion beam to create a scanned ion beam, and directing the scanned ion beam toward a workpiece.

9. 发明授权

EP1864312B1 METHOD OF MEASURING BEAM ANGLE 有权
标题翻译：法测量光束角
公开(公告)号：EP1864312B1
公开(公告)日：2010-12-29
申请号：EP06748979.9
申请日：2006-03-31
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： RAY, Andrew
IPC分类号： H01J37/304
CPC分类号： H01J37/244 , H01J37/304 , H01J37/3045 , H01J37/3171 , H01J2237/24405 , H01J2237/24507 , H01J2237/24528 , H01J2237/24542 , H01J2237/30405 , H01J2237/30411 , H01J2237/31701 , H01J2237/31703
摘要： A system, apparatus, and method for determining two angles of incidence of an ion beam (110) to a surface of a workpiece is provided. A measurement apparatus (104) having an elongate first (202) and second sensor (204) is coupled to a translation mechanism (140) , wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller (106) is operable to determine a first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

10. 发明公开

EP1864312A1 METHOD OF MEASURING BEAM ANGLE 有权
标题翻译：法测量光束角
公开(公告)号：EP1864312A1
公开(公告)日：2007-12-12
申请号：EP06748979.9
申请日：2006-03-31
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： RAY, Andrew
IPC分类号： H01J37/304
CPC分类号： H01J37/244 , H01J37/304 , H01J37/3045 , H01J37/3171 , H01J2237/24405 , H01J2237/24507 , H01J2237/24528 , H01J2237/24542 , H01J2237/30405 , H01J2237/30411 , H01J2237/31701 , H01J2237/31703
摘要： A system, apparatus, and method for determining two angles of incidence of an ion beam (110) to a surface of a workpiece is provided. A measurement apparatus (104) having an elongate first (202) and second sensor (204) is coupled to a translation mechanism (140) , wherein the first sensor extends in a first direction perpendicular to the translation, and wherein the second sensor extends at an oblique angle to the first sensor. The first and second elongate sensors sense one or more characteristics of the ion beam as the first and second sensors pass through the ion beam at a respective first time and a second time, and a controller (106) is operable to determine a first and second angle of incidence of the ion beam, based, at least in part, on the one or more characteristics of the ion beam sensed by the first sensor and second sensor at the first and second times.

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