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1. 发明申请

WO2009061485A1 PLASMA ELECTRON FLOOD FOR ION BEAM IMPLANTER 审中-公开
标题翻译：用于离子束植绒的等离子体电子水
公开(公告)号：WO2009061485A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/012599
申请日：2008-11-06
申请人： AXCELIS TECHNOLOGIES, INC , VANDERBERG, Bo , DIVERGILIO, William
发明人： VANDERBERG, Bo , DIVERGILIO, William
IPC分类号： H01J37/077 , H01J3/00 , H01J37/02 , H01J37/317
CPC分类号： H01J37/026 , H01J37/3171 , H01J2237/0041 , H01J2237/06366
摘要： A plasma electron flood system, comprising a housing configured to contain a gas, and comprising an elongated extraction slit, and a cathode and a plurality of anodes residing therein and wherein the elongated extraction slit is in direct communication with an ion implanter, wherein the cathode emits electrons that are drawn to the plurality of anodes through a potential difference therebetween, wherein the electrons are released through the elongated extraction slit as an electron band for use in neutralizing a ribbon ion beam traveling within the ion implanter.
摘要翻译：一种等离子体电子泛洪系统，包括构造成容纳气体的壳体，并且包括细长的提取狭缝以及驻留在其中的阴极和多个阳极，并且其中所述细长的提取狭缝与离子注入机直接连通，其中所述阴极发射通过它们之间的电位差吸引到多个阳极的电子，其中电子通过细长的提取狭缝释放，作为用于中和在离子注入机内行进的带状离子束的电子带。

2. 发明申请

WO2008042094A3 NEW AND IMPROVED BEAM LINE ARCHITECTURE FOR ION IMPLANTER 审中-公开
公开(公告)号：WO2008042094A3
公开(公告)日：2008-04-10
申请号：PCT/US2007/019904
申请日：2007-09-13
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , SPLINTER, Patrick
发明人： VANDERBERG, Bo , SPLINTER, Patrick
IPC分类号： H01J37/147 , H01J37/317
摘要： A parallelizing component (439) of an ion implantation system (410) comprises two angled dipole magnets (439a, 439b) that mirror one another and serve to bend an ion beam (424) traversing therethrough to have a substantially "s" shape. This s bend serves to filter out contaminants of the beam, while the dipoles also parallelize the beam to facilitate uniform implant properties across the wafer (430), such as implant angle, for example. Additionally, a " deceleration stage (457) is included toward the end of the implantation system so that the energy of the beam can be kept relatively high throughout the beamlihe to mitigate beam blowup.

3. 发明申请

WO2007120623A2 ION BEAM SCANNING CONTROL METHODS AND SYSTEMS FOR ION IMPLANTATION UNIFORMITY 审中-公开
标题翻译：离子注入均匀性的离子束扫描控制方法和系统
公开(公告)号：WO2007120623A2
公开(公告)日：2007-10-25
申请号：PCT/US2007/008784
申请日：2007-04-10
申请人： AXCELIS TECHNOLOGIES, INC. , BENVENISTE, Vistor , EISNER, Edward , VANDERBERG, Bo
发明人： BENVENISTE, Vistor , EISNER, Edward , VANDERBERG, Bo
CPC分类号： H01J37/3171 , G21K5/04 , H01J37/304 , H01J2237/24507 , H01J2237/3045 , H01J2237/30455 , H01J2237/31703
摘要： One embodiment of the invention relates to a method for adjusting the ribbon beam flux of a scanned ion beam. In this method, an ion beam is scanned at a scan rate, and a plurality of dynamic beam profiles are measured as the ion beam is scanned. A corrected scan rate is calculated based on the plurality of measured dynamic beam profiles of the scanned beam. The ion beam is scanned at the corrected scan rate to produce a corrected ribbon ion beam. Other methods and systems are also disclosed.
摘要翻译：本发明的一个实施例涉及用于调节扫描离子束的带状束通量的方法。在该方法中，以扫描速率扫描离子束，并且在扫描离子束时测量多个动态射束轮廓。基于扫描光束的多个测量的动态光束轮廓来计算校正的扫描速率。以校正的扫描速率扫描离子束以产生经校正的带状离子束。其他方法和系统也被公开。

4. 发明申请

WO2007064515A2 MEANS TO ESTABLISH ORIENTATION OF ION BEAM TO WAFER AND CORRECT ANGLE ERRORS 审中-公开
标题翻译：意味着建立离子束到波形和正确角度误差的方向
公开(公告)号：WO2007064515A2
公开(公告)日：2007-06-07
申请号：PCT/US2006/044891
申请日：2006-11-17
申请人： AXCELIS TECHNOLOGIES, INC. , RATHMELL, Robert , VANDERBERG, Bo
发明人： RATHMELL, Robert , VANDERBERG, Bo
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/31703
摘要： One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the ion beam to be accurately determined by moving the measurement component relative to the ion beam. The measurement component is oriented at a known relationship relative to the workpiece so that a relative orientation between the workpiece and beam can be established. Knowing the relative orientation between the ion beam and workpiece allows the workpiece to be oriented to a specific angle relative to the measured beam angle for more accurate and precise doping of the workpiece, which enhances semiconductor fabrication.
摘要翻译：本发明的一个或多个方面涉及有助于确定离子束和工件之间的相对取向的测量部件。测量部件对离子辐射敏感，并允许通过相对于离子束移动测量部件来精确地确定测量部件和离子束之间的相对取向。测量部件相对于工件以已知的关系定向，从而可以建立工件和梁之间的相对取向。了解离子束和工件之间的相对取向允许工件相对于测量的光束角定向到特定的角度，以更准确和精确地掺杂工件，这增强了半导体制造。

5. 发明申请

WO2016160421A1 INTEGRATED EXTRACTION ELECTRODE MANIPULATOR FOR ION SOURCE 审中-公开
标题翻译：用于离子源的集成提取电极操作器
公开(公告)号：WO2016160421A1
公开(公告)日：2016-10-06
申请号：PCT/US2016/023577
申请日：2016-03-22
申请人： AXCELIS TECHNOLOGIES, INC.
发明人： VANDERBERG, Bo , VALINSKI, Joseph , CRISTOFORO, Michael
IPC分类号： H01J37/067 , H01J37/04 , H01J37/317
CPC分类号： H01J37/3171 , H01J27/024 , H01J37/08 , H01J2237/024 , H01J2237/061
摘要： A modular ion source and extraction apparatus 200 comprises an ion source chamber 202 selectively electrically coupled to a voltage potential, wherein the ion source chamber comprises an extraction aperture 203. An extraction electrode 206 is positioned proximate to the extraction aperture of the ion source chamber, wherein the extraction electrode is configured to extract ions from the ion source chamber, and may be electrically grounded. One or more linkages 208 operably couple to the ion source chamber, and one or more insulators 210 couple the extraction electrode to the respective one or more linkages, wherein the one or more insulators electrically insulate the respective one or more linkages from the extraction electrode, therein electrically insulating the extraction electrode from the ion source chamber. One or more actuators 212; 218, 220 operably couple the one or more linkages to the ion source chamber, wherein the one or more actuators are configured to translate the one or more linkages with respect to the ion source chamber, therein translating the extraction electrode in one or more axes,
摘要翻译：模块化离子源和提取装置200包括选择性地电耦合到电压电势的离子源室202，其中离子源室包括提取孔203.引出电极206位于靠近离子源室的提取孔的位置，其中所述提取电极被配置为从所述离子源室提取离子，并且可以被电接地。一个或多个连接件208可操作地耦合到离子源室，并且一个或多个绝缘体210将引出电极耦合到相应的一个或多个连接件，其中一个或多个绝缘体将相应的一个或多个连接件与引出电极电绝缘，其中提取电极与离子源室电绝缘。一个或多个致动器212; 218,220可操作地将所述一个或多个连接件耦合到所述离子源室，其中所述一个或多个致动器构造成相对于所述离子源室平移所述一个或多个连接件，其中所述引出电极在一个或多个轴中平移，

6. 发明申请

WO2011136851A1 MAGNETIC SCANNING SYSTEM WITH IMPROVED EFFICIENCY 审中-公开
标题翻译：具有提高效率的磁扫描系统
公开(公告)号：WO2011136851A1
公开(公告)日：2011-11-03
申请号：PCT/US2011/000736
申请日：2011-04-27
申请人： AXCELIS TECHNOLOGIES INC. , VANDERBERG, Bo
发明人： VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317
CPC分类号： H01J37/1475 , H01J37/3171 , H01J2237/1523 , H01J2237/1526
摘要： Some aspects of the present invention facilitate ion implantation by using a magnetic beam scanner (106, 300) that includes first and second magnetic elements having a beam path region therebetween. One or more magnetic flux compression elements (140a, b, 302, 304) are disposed proximate to the beam path region and between the first and second magnetic elements. During operation, the first and magnetic elements cooperatively generate an oscillatory time-varying magnetic field in the beam path region to scan an ion beam back and forth in time. The one or more magnetic flux compression elements compress the magnetic flux provided by the first and second magnetic elements, thereby reducing the amount of power required to magnetically scan the beam back and forth (relative to previous implementations). Other scanners, systems, and methods are also disclosed.
摘要翻译：本发明的一些方面通过使用包括其间具有光束路径区域的第一和第二磁性元件的磁束扫描器（106,300）来促进离子注入。一个或多个磁通量压缩元件（140a，b，302,304）设置在光束路径区域附近以及第一和第二磁性元件之间。在操作期间，第一和磁性元件协同地在光束路径区域中产生振荡时变磁场，以及时扫描离子束。一个或多个磁通量压缩元件压缩由第一和第二磁性元件提供的磁通量，从而减少磁力扫描光束所需的功率量（相对于先前的实施方式）。还公开了其他扫描仪，系统和方法。

7. 发明申请

WO2010011252A1 METHOD AND APPARATUS FOR MEASUREMENT OF BEAM ANGLE IN ION IMPLANTATION 审中-公开
标题翻译：用于测量离子植入中的光束角的方法和装置
公开(公告)号：WO2010011252A1
公开(公告)日：2010-01-28
申请号：PCT/US2009/003743
申请日：2009-06-23
申请人： AXCELIS TECHNOLOGIES, INC. , MITCHELL, Robert , VANDERBERG, Bo
发明人： MITCHELL, Robert , VANDERBERG, Bo
IPC分类号： H01J37/317 , H01J37/147 , H01J37/304
CPC分类号： H01J37/1471 , H01J37/304 , H01J37/3171 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578
摘要： An ion beam angle detection apparatus (440), comprising a linear drive assembly (460) fixedly attached to a moveable profiler assembly (450), wherein the profiler assembly comprises, a profiler having a profiler aperture (454) formed within a profiler top plate (455) and a profiler sensor assembly, a moveable angle mask assembly (446) comprising a moveable angle mask with a mask aperture (448), wherein the angle mask assembly is non-fixedly attached to the profiler assembly, the mask aperture is movable relative to the profiler aperture by energizing an mask linear drive (464) fixedly attached to the profiler assembly and the profiler aperture is movable through a length greater than the elongated length of the ion beam (456).
摘要翻译：一种离子束角度检测装置（440），其包括固定地连接到可移动轮廓仪组件（450）的线性驱动组件（460），其中所述轮廓仪组件包括：轮廓仪，其具有形成在轮廓仪顶板内的轮廓仪孔（455）和轮廓仪传感器组件，可移动角度掩模组件（446），其包括具有掩模孔（448）的可移动角度掩模，其中所述角度掩模组件不固定地附接到所述轮廓仪组件，所述掩模孔可移动相对于轮廓仪孔径，通过激励固定地附接到轮廓仪组件的掩模线性驱动器（464），并且轮廓仪孔径可移动通过大于离子束（456）的细长长度的长度。

8. 发明申请

WO2007145849A3 BEAM ANGLE ADJUSTMENT IN ION IMPLANTERS 审中-公开
公开(公告)号：WO2007145849A3
公开(公告)日：2007-12-21
申请号：PCT/US2007/012934
申请日：2007-06-01
申请人： AXCELIS TECHNOLOGIES, INC. , VANDERBERG, Bo , XIANGYANG, Wu
发明人： VANDERBERG, Bo , XIANGYANG, Wu
IPC分类号： H01J37/147 , H01J37/317
摘要： A steering element is included in an ion implantation system to direct or "steer" an ion beam (624) to a scan vertex (651) of a scanning element (636) downstream of the steering element. In this manner, the scan vertex of the scanning element coincides with the focal point of a parallelizing element (630) downstream of the scanning element. This allows the beam to emerge from the parallelizing element at an expected angle so that ions can be implanted in a desired manner into a workpiece located downstream of the parallelizing element.

9. 发明申请

WO2004114358A3 THIN MAGNETRON STRUCTURES FOR PLASMA GENERATION IN ION IMPLANTATION SYSTEMS 审中-公开
公开(公告)号：WO2004114358A3
公开(公告)日：2004-12-29
申请号：PCT/US2004/019588
申请日：2004-06-18
申请人： AXCELIS TECHNOLOGIES INC. , BENVENISTE, Victor , DEVERGILIO, William , VANDERBERG, Bo
发明人： BENVENISTE, Victor , DEVERGILIO, William , VANDERBERG, Bo
IPC分类号： H01J37/317
摘要： A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

10. 发明公开

EP2340549A1 ADJUSTABLE DEFLECTION OPTICS FOR ION IMPLANTATION 审中-公开
标题翻译：可调偏转离子注入
公开(公告)号：EP2340549A1
公开(公告)日：2011-07-06
申请号：EP09745145.4
申请日：2009-09-17
申请人： Axcelis Technologies, Inc.
发明人： GRAF, Mike , EISNER, Edward , VANDERBERG, Bo
IPC分类号： H01J37/147 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/147 , H01J2237/04735 , H01J2237/04756 , H01J2237/049 , H01J2237/12
摘要： A deflection component (236) suitable for use in an ion implantation system comprises multiple electrodes (236a, 236b) that can be selectively biased to cause an ion beam (124) passing therethrough to bend, deflect, focus, converge, diverge, accelerate, decelerate, and/or decontaminate. Since the electrodes can be selectively biased, and thus one or more of them can remain unbiased or off, the effective length of the beam path can be selectively adjusted as desired (e.g., based upon beam properties, such as energy, dose, species, etc. ).

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