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    • 8. 发明专利
    • SEMICONDUCTOR LASER DEVICE AND METHOD OF MANUFACTURING THE SAME
    • CA1299718C
    • 1992-04-28
    • CA585268
    • 1988-12-07
    • TANAKA AKIRA
    • TANAKA AKIRA
    • H01S5/227H01S3/19H01L33/00
    • A semiconductor laser device comprising a semiconductor substrate, a multi-layered mesa stripe having an active layer sandwitched between a semiconductor layer of the same conductivity type as that of the active layer and a semiconductor layer of the opposite conductivity type to that of the active layer, and formed on the substrate, a burying layer having a refractive index smaller than that of active layer and burying both sides of the mesa stripe, and a pair of electrodes for supplying a current to active layer. The mesa stripe is constructed such that both sides of active layer neighboring to the semiconductor layer of the opposite conductivity type substantially coinside with those of the semiconductor layer, and that active layer has a width decreasing toward the boundary between active layer and semiconductor layer of the same conductivity type, thereby to form a waist portion at the boundary, and in that a protective layer is formed to fill the waist portion, thus covering at least both sides of the active layer. A method for manufacturing the semiconductor laser device having above mentioned features, wherein etching of the multi-layer structure of semiconductor is so controlled to form a V-shaped waist portion at the boundary between active layer and semiconductor layer of the same conductivity type, and a protective layer is selectively formed to fill the waist portion.