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1. 发明申请

WO2010065473A2 GAS DISTRIBUTION BLOCKER APPARATUS 审中-公开
标题翻译：气体分配阻塞装置
公开(公告)号：WO2010065473A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066145
申请日：2009-11-30
申请人： APPLIED MATERIALS, INC. , TSUEI, Lun , TSO, Alan , CHO, Tom K , SHIEH, Brian Sy-Yuan
发明人： TSUEI, Lun , TSO, Alan , CHO, Tom K , SHIEH, Brian Sy-Yuan
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/45559 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
摘要翻译：本发明的实施方案通常提供用于改变在处理室的喷头上提供的工艺气体的流量和压力差的装置和方法，以提供跨过设置在其中的衬底的表面的改进的沉积均匀性。在一个实施例中，阻挡板设置在背板和喷头之间。在一个实施例中，阻挡板和喷头之间的距离是可调节的。在另一个实施例中，阻挡板具有非平面的表面轮廓。在另一个实施例中，区域阻滞板设置在背板和喷头之间。在另一个实施例中，中间阻滞板和外围阻滞板设置在背板和喷头之间。

2. 发明申请

WO2010051233A3 ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
公开(公告)号：WO2010051233A3
公开(公告)日：2010-05-06
申请号：PCT/US2009/061893
申请日：2009-10-23
申请人： APPLIED MATERIALS, INC. , ZHANG, Lin , TSUEI, Lun , TSO, Alan , CHO, Tom K. , SHIEH, Brian Sy-Yuan
发明人： ZHANG, Lin , TSUEI, Lun , TSO, Alan , CHO, Tom K. , SHIEH, Brian Sy-Yuan
IPC分类号： H01L21/205 , H05H1/34
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.

3. 发明申请

WO2010048165A2 MULTIPLE GAS FEED APPARATUS AND METHOD 审中-公开
标题翻译：多气体给料装置和方法
公开(公告)号：WO2010048165A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/061303
申请日：2009-10-20
申请人： APPLIED MATERIALS INC. , TSO, Alan , TSUEI, Lun , CHO, Tom, K. , SHIEH, Brian, Sy-yuan
发明人： TSO, Alan , TSUEI, Lun , CHO, Tom, K. , SHIEH, Brian, Sy-yuan
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574
摘要： Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source.
摘要翻译：本发明的实施例通常提供用于将处理气体引入处理室中的多个位置的装置和方法。在一个实施例中，喷头的中心区域和喷头的角区域从中央气源被供给工艺气体，第一质量流量控制器调节中心区域中的流量，第二质量流量控制器调节拐角中的流量区域。在另一个实施例中，喷头的中心区域从第一气源供给工艺气体，并且喷头的拐角区域从第二气源供给工艺气体。在另一个实施例中，喷头的中心区域从第一气源供给工艺气体，并且喷头的每个拐角区域从单独的气源供给工艺气体。

4. 发明申请

WO2005059974A1 EDGE FLOW FACEPLATE FOR IMPROVEMENT OF CVD FILM PROPERTIES 审中-公开
标题翻译：用于改善CVD膜特性的边缘流动面
公开(公告)号：WO2005059974A1
公开(公告)日：2005-06-30
申请号：PCT/US2004/041967
申请日：2004-12-14
申请人： APPLIED MATERIALS, INC. , ZHAO, Mosheng , TSUEI, Lun , ROCHA-ALVAREZ, Juan Carlos , CHO, Tom K.
发明人： ZHAO, Mosheng , TSUEI, Lun , ROCHA-ALVAREZ, Juan Carlos , CHO, Tom K.
IPC分类号： H01L21/00
CPC分类号： C23C16/45565 , C23C16/5096 , H01J37/3244
摘要： Embodiments in accordance with the present invention relate to apparatuses and methods distributing processing gases over a workpiece surface. In accordance with one embodiment of the present invention, process gases are flowed to a surface of a semiconductor wafer through a substantially circular gas distribution showerhead defining a plurality of holes. A first set of holes located at the center of the faceplate, are arranged in a non-concentric manner not exhibiting radial symmetry. This asymmetric arrangement achieves maximum density of holes and gases distributed therefrom. To compensate for nonuniform exposure of the wafer edges to gases flowed from the first hole set, the faceplate periphery defines a second set of holes arranged concentrically and exhibiting radial symmetry. Processing substrates with gases flowed through the first and second sets of holes results in formation of films exhibiting enhanced uniformity across center-to-edge regions.
摘要翻译：根据本发明的实施例涉及在工件表面上分配处理气体的装置和方法。根据本发明的一个实施例，工艺气体通过限定多个孔的基本圆形的气体分配喷头流动到半导体晶片的表面。位于面板中心的第一组孔布置成不呈径向对称的非同心方式。这种非对称布置实现了从其分布的孔和气体的最大密度。为了补偿晶片边缘对从第一孔组流出的气体的不均匀曝光，面板周边限定了同心布置并呈现径向对称性的第二组孔。处理具有流过第一组和第二组孔的气体的衬底导致形成在中心到边缘区域具有增强的均匀性的膜。

5. 发明申请

WO2009061737A1 COUNTER-BALANCED SUBSTRATE SUPPORT 审中-公开
标题翻译：计数平衡基板支持
公开(公告)号：WO2009061737A1
公开(公告)日：2009-05-14
申请号：PCT/US2008/082365
申请日：2008-11-04
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , TRAN, Toan, Q. , TSUEI, Lun , HERNANDEZ, Manuel, A. , FLOYD, Kirby, H. , YIEH, Ellie Y.
发明人： LUBOMIRSKY, Dmitry , TRAN, Toan, Q. , TSUEI, Lun , HERNANDEZ, Manuel, A. , FLOYD, Kirby, H. , YIEH, Ellie Y.
IPC分类号： H01L21/00 , G03F7/20
CPC分类号： H01L21/6719 , H01L21/67017 , H01L21/68742 , H01L21/68792
摘要： A semiconductor processing chamber having an interior capable of holding an internal chamber pressure below ambient atmospheric pressure and a pumping system coupled to the chamber and adapted to remove material from trie processing chamber, and a substrate support pedestal, where the substrate support pedestal is rigidly coupled to a substrate support shaft extending through a wall of the processing chamber. A bracket located outside the chamber is rigidly or rotatably coupled to the substrate support shaft. A motor coupled to the bracket vertically translates the substrate support pedestal, shaft and bracket closer to a processing plate. A piston mounted on an end of the bracket provides a counter-balancing force to a tilting force generated by a change in the internal chamber pressure and causes a deflection in the position of the bracket and the substrate support, thereby reducing the deflection of the bracket and the substrate support.
摘要翻译：具有能够将内部室压力保持在低于环境大气压力的内部的半导体处理室以及耦合到该室并适于从三维处理室移除材料的泵送系统以及衬底支撑基座，其中衬底支撑基座刚性地联接通过延伸穿过处理室的壁的衬底支撑轴。位于室外的支架刚性或可旋转地联接到基板支撑轴。耦合到支架的马达将基板支撑基座，轴和支架垂直地平移到更靠近处理板。安装在托架的端部上的活塞提供与由内部室压力变化产生的倾斜力的反平衡力并引起支架和基板支撑件位置的偏转，从而减小支架的偏转和基板支撑。

6. 发明申请

WO2010036657A2 METHODS FOR FABRICATING FACEPLATE OF SEMICONDUCTOR APPARATUS 审中-公开
标题翻译：制造半导体装置面板的方法
公开(公告)号：WO2010036657A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/057882
申请日：2009-09-22
申请人： APPLIED MATERIALS, INC. , TAN, Tien, Fak , TSUEI, Lun , CHEN, Shaofeng , RABINOVICH, Felix , LUBOMIRSKY, Dmitry , HINCKLEY, Kimberly
发明人： TAN, Tien, Fak , TSUEI, Lun , CHEN, Shaofeng , RABINOVICH, Felix , LUBOMIRSKY, Dmitry , HINCKLEY, Kimberly
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： C23C16/45565 , H01J37/3244 , Y10T29/49401
摘要： A method for manufacturing a faceplate of a semiconductor apparatus is provided. The method includes selecting a size of a tool in response to a predetermined specification of a predetermined gas parameter. The tool is used to form the holes within the faceplate. A first gas parameter of the holes of the faceplate is measured by an apparatus to determine if the measured first gas parameter of the holes of the faceplate is within the predetermined specification.
摘要翻译：提供了一种用于制造半导体装置的面板的方法。该方法包括响应于预定气体参数的预定规格来选择工具的尺寸。该工具用于在面板内形成孔。面板的孔的第一气体参数由设备测量以确定面板的孔的测量的第一气体参数是否在预定的规格内。

7. 发明申请

WO2009140153A2 APPARATUS FOR ETCHING SEMICONDUCTOR WAFERS 审中-公开
标题翻译：用于蚀刻半导体波长的装置
公开(公告)号：WO2009140153A2
公开(公告)日：2009-11-19
申请号：PCT/US2009/043261
申请日：2009-05-08
申请人： APPLIED MATERIALS, INC. , LUBOMIRSKY, Dmitry , TAN, Tien, Fak , TSUEI, Lun
发明人： LUBOMIRSKY, Dmitry , TAN, Tien, Fak , TSUEI, Lun
IPC分类号： H01L21/683 , H01L21/687 , H01L21/3065 , H01L21/205
CPC分类号： H01L21/67126 , H01L21/6838 , Y10T279/23
摘要： A wafer pedestal of a semiconductor apparatus is provided. The wafer pedestal is capable of supporting a substrate. The wafer pedestal includes a pedestal having at least one purge opening configured to flow a purge gas and at least one chucking opening configured to chuck the substrate over the pedestal. The pedestal includes a sealing band disposed between the at least one purge opening and the at least one chucking opening. The sealing band is configured to support the substrate.
摘要翻译：提供半导体装置的晶片基座。晶片基座能够支撑基板。晶片基座包括具有至少一个净化开口的基座，该至少一个净化开口构造成流过净化气体;以及至少一个夹紧开口，其构造成将基板夹在基座上。基座包括设置在至少一个吹扫开口和至少一个夹紧开口之间的密封带。密封带构造成支撑基底。

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