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1. 发明申请

WO2010021938A3 SHOWERHEAD AND SHADOW FRAME 审中-公开
公开(公告)号：WO2010021938A3
公开(公告)日：2010-02-25
申请号：PCT/US2009/053922
申请日：2009-08-14
申请人： APPLIED MATERIALS, INC. , CHO, Tom, K. , YUAN, Zheng , SHIEH, Brian, Sy-yuan
发明人： CHO, Tom, K. , YUAN, Zheng , SHIEH, Brian, Sy-yuan
IPC分类号： H01L21/205 , H05H1/34
摘要： The present invention generally relates to a gas distribution showerhead and a shadow frame for an apparatus. By extending the corners of the gas distribution showerhead the electrode area may be expanded relative to the anode and thus, uniform film properties may be obtained. Additionally, the expanded corners of the gas distribution showerhead may have gas passages extending therethrough. In one embodiment, hollow cathode cavities may be present on the bottom surface of the showerhead without permitting gas to pass therethrough. The shadow frame in the apparatus may also have its corner areas extended out to enlarge the anode in the corner areas of the substrate being processed and thus, may lead to deposition of a material on the substrate having substantially uniform properties.

2. 发明申请

WO2009154889A2 GAS DISTRIBUTION SHOWERHEAD SKIRT 审中-公开
标题翻译：气体分配淋浴裙
公开(公告)号：WO2009154889A2
公开(公告)日：2009-12-23
申请号：PCT/US2009/043189
申请日：2009-05-07
申请人： APPLIED MATERIALS, INC. , CHO, Tom, K. , SHIEH, Brian, Sy-yuan , YUAN, Zheng
发明人： CHO, Tom, K. , SHIEH, Brian, Sy-yuan , YUAN, Zheng
IPC分类号： H01L21/205
CPC分类号： C23C16/5096 , C23C16/45565 , C23C16/45587 , H01J37/3244
摘要： The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
摘要翻译：本发明通常包括从处理室中的气体分配喷头延伸的延伸部或裙部。当处理基板时，气体分配喷头可被电偏置。在某些情况下，电偏置喷头可以将处理气体点燃成等离子体状态。处理室和基座的壁可以相对于喷头接地。因此，与电偏压花洒相比，衬底的边缘可具有更大的接地触点表面积。由于边缘附近的接地增加，与衬底的中间相比，沉积在衬底上的材料可能具有不同的性质。通过将淋浴头边缘向下靠近基板延伸，可以获得材料的基本均匀的特性。

3. 发明申请

WO2010065473A3 GAS DISTRIBUTION BLOCKER APPARATUS 审中-公开
标题翻译：燃气分配阻塞装置
公开(公告)号：WO2010065473A3
公开(公告)日：2010-08-19
申请号：PCT/US2009066145
申请日：2009-11-30
申请人： APPLIED MATERIALS INC , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/45559 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
摘要翻译：本发明的实施例通常提供用于改变在处理腔室的喷头上供应的处理气体的流动和压差的装置和方法，以在设置于其中的基板的表面上提供改善的沉积均匀性。在一个实施例中，阻挡板布置在背板和喷头之间。在一个实施例中，阻挡板和喷头之间的距离是可调的。在另一个实施例中，阻挡板具有非平面表面轮廓。在另一个实施例中，区域阻挡板设置在背板和喷头之间。在另一个实施例中，中心阻挡板和外围阻挡板设置在背板和喷头之间。

4. 发明申请

WO2010048165A3 MULTIPLE GAS FEED APPARATUS AND METHOD 审中-公开
标题翻译：多种气体送料装置及方法
公开(公告)号：WO2010048165A3
公开(公告)日：2010-08-12
申请号：PCT/US2009061303
申请日：2009-10-20
申请人： APPLIED MATERIALS INC , TSO ALAN , TSUEI LUN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： TSO ALAN , TSUEI LUN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574
摘要： Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source.
摘要翻译：本发明的实施例通常提供用于将处理气体引入多个位置处的处理室中的装置和方法。在一个实施例中，喷头的中心区域和喷头的拐角区域从中心气体源供给处理气体，第一质量流量控制器调节中心区域中的流动，第二质量流量控制器调节角落中的流动区域。在另一个实施例中，喷头的中心区域从第一气体源供给工艺气体，并且喷头的拐角区域从第二气体源供给工艺气体。在另一个实施例中，喷头的中心区域从第一气体源供给工艺气体，喷头的每个拐角区域从单独的气体源供给工艺气体。

5. 发明申请

WO2010051233A2 ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
标题翻译：可调式燃气分配装置
公开(公告)号：WO2010051233A2
公开(公告)日：2010-05-06
申请号：PCT/US2009061893
申请日：2009-10-23
申请人： APPLIED MATERIALS INC , ZHANG LIN , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
发明人： ZHANG LIN , TSUEI LUN , TSO ALAN , CHO TOM K , SHIEH BRIAN SY-YUAN
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： H01J37/32935 , C23C16/45565 , C23C16/45589 , H01J37/3244
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.
摘要翻译：本发明的实施例一般提供用于改变处理室内的气体分配板的轮廓而不破坏室内的真空条件的设备和方法。在一个实施例中，调节中央支撑装置以相对于气体分配板的周边改变气体分配板的中心区域的高度。在另一个实施例中，调节多个中央支撑装置以改变气体分配板的中心区域相对于板的周边的高度。在又一个实施例中，调节多个中央支撑装置和多个中档支撑装置以改变气体分配板的某些区域相对于气体分配板的其他区域的高度。在一个实施例中，气体分配板的轮廓基于在处理室内检测到的变化而改变。

6. 发明申请

WO2009154889A3 GAS DISTRIBUTION SHOWERHEAD SKIRT 审中-公开
标题翻译：气体分配淋浴裙
公开(公告)号：WO2009154889A3
公开(公告)日：2010-02-25
申请号：PCT/US2009043189
申请日：2009-05-07
申请人： APPLIED MATERIALS INC , CHO TOM K , SHIEH BRIAN SY-YUAN , YUAN ZHENG
发明人： CHO TOM K , SHIEH BRIAN SY-YUAN , YUAN ZHENG
IPC分类号： H01L21/205
CPC分类号： C23C16/5096 , C23C16/45565 , C23C16/45587 , H01J37/3244
摘要： The present invention generally includes an extension or skirt that extends from a gas distribution showerhead in a processing chamber. When processing substrates, the gas distribution showerhead may be electrically biased. The electrically biased showerhead may, in some cases, ignite the processing gas into a plasma state. The walls of the processing chamber and the susceptor, may be grounded relative to the showerhead. Thus, the edges of the substrate may have a greater surface area of ground contacts as compared to the electrically biased showerhead. Due to the increase in grounding near the edges, the material deposited on the substrate may have different properties as compared to the middle of the substrate. By extending the showerhead edges down closer toward the substrate, substantially uniform properties of the material may be obtained.
摘要翻译：本发明通常包括从处理室中的气体分配喷头延伸的延伸部或裙部。当处理基板时，气体分配喷头可被电偏置。在某些情况下，电偏置喷头可以将处理气体点燃成等离子体状态。处理室和基座的壁可以相对于喷头接地。因此，与电偏压花洒相比，衬底的边缘可具有更大的接地触点表面积。由于边缘附近的接地增加，与衬底的中间相比，沉积在衬底上的材料可能具有不同的性质。通过将淋浴头边缘向下靠近基板延伸，可以获得材料的基本均匀的特性。

7. 发明申请

WO2011113177A1 METHOD AND APPARATUS FOR REMOTE PLASMA SOURCE ASSISTED SILICON-CONTAINING FILM DEPOSITION 审中-公开
标题翻译：远程等离子体源辅助含硅膜沉积的方法和装置
公开(公告)号：WO2011113177A1
公开(公告)日：2011-09-22
申请号：PCT/CN2010/000325
申请日：2010-03-17
申请人： APPLIED MATERIALS, INC. , LAKSHMANAN, Annamalai , FANG, Jun , TANG, Jianshe , HO, Dustin W. , SCHMITT, Francimar , TSO, Alan , CHO, Tom , SHIEH, Brian Sy-Yuan , PONNEKANTI, Hari K. , EBERSPACHER, Chris , YUAN, Zheng
发明人： LAKSHMANAN, Annamalai , FANG, Jun , TANG, Jianshe , HO, Dustin W. , SCHMITT, Francimar , TSO, Alan , CHO, Tom , SHIEH, Brian Sy-Yuan , PONNEKANTI, Hari K. , EBERSPACHER, Chris , YUAN, Zheng
IPC分类号： C23C16/44 , H01L21/205
CPC分类号： H01L31/1824 , C23C16/24 , C23C16/452 , C23C16/45514 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/5096 , H01L31/202 , Y02E10/545 , Y02P70/521
摘要： An apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells are provided. In one embodiment, a method and apparatus is provided for generating and introducing hydrogen radicals directly into a processing region of a processing chamber for reaction with a silicon-containing precursor for film deposition on a substrate. In one embodiment, the hydrogen radicals are generated by a remote plasma source and directly introduced into the processing region via a line of sight path to minimize the loss of energy by the hydrogen radicals prior to reaching the processing region.
摘要翻译：提供了在形成太阳能电池期间沉积非晶硅和微晶硅膜的装置和方法。在一个实施方案中，提供了一种方法和装置，用于将氢自由基直接生成并引入处理室的处理区域中，以与用于在基板上沉积膜的含硅前体反应。在一个实施方案中，氢自由基由远程等离子体源产生，并且经由视线路径直接引入处理区域，以在到达处理区域之前最小化氢自由基的能量损失。

8. 发明申请

WO2010065473A2 GAS DISTRIBUTION BLOCKER APPARATUS 审中-公开
标题翻译：气体分配阻塞装置
公开(公告)号：WO2010065473A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066145
申请日：2009-11-30
申请人： APPLIED MATERIALS, INC. , TSUEI, Lun , TSO, Alan , CHO, Tom K , SHIEH, Brian Sy-Yuan
发明人： TSUEI, Lun , TSO, Alan , CHO, Tom K , SHIEH, Brian Sy-Yuan
IPC分类号： H01L21/205 , H05H1/34
CPC分类号： C23C16/45565 , C23C16/45559 , H01L31/076 , H01L31/1824 , Y02E10/545 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the flow and pressure differential of process gases supplied across a showerhead of a processing chamber to provide improved deposition uniformity across the surface of a substrate disposed therein. In one embodiment, a blocker plate is disposed between a backing plate and a showerhead. In one embodiment, the distance between the blocker plate and the showerhead is adjustable. In another embodiment, the blocker plate has a non-planar surface contour. In another embodiment, a regional blocker plate is disposed between a backing plate and a showerhead. In another embodiment, a central blocker plate and a peripheral blocker plate are disposed between a backing plate and a showerhead.
摘要翻译：本发明的实施方案通常提供用于改变在处理室的喷头上提供的工艺气体的流量和压力差的装置和方法，以提供跨过设置在其中的衬底的表面的改进的沉积均匀性。在一个实施例中，阻挡板设置在背板和喷头之间。在一个实施例中，阻挡板和喷头之间的距离是可调节的。在另一个实施例中，阻挡板具有非平面的表面轮廓。在另一个实施例中，区域阻滞板设置在背板和喷头之间。在另一个实施例中，中间阻滞板和外围阻滞板设置在背板和喷头之间。

9. 发明申请

WO2010051233A3 ADJUSTABLE GAS DISTRIBUTION APPARATUS 审中-公开
公开(公告)号：WO2010051233A3
公开(公告)日：2010-05-06
申请号：PCT/US2009/061893
申请日：2009-10-23
申请人： APPLIED MATERIALS, INC. , ZHANG, Lin , TSUEI, Lun , TSO, Alan , CHO, Tom K. , SHIEH, Brian Sy-Yuan
发明人： ZHANG, Lin , TSUEI, Lun , TSO, Alan , CHO, Tom K. , SHIEH, Brian Sy-Yuan
IPC分类号： H01L21/205 , H05H1/34
摘要： Embodiments of the present invention generally provide apparatus and methods for altering the contour of a gas distribution plate within a process chamber without breaking vacuum conditions within the chamber. In one embodiment, a central support device adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the gas distribution plate. In another embodiment, a plurality of central support devices is adjusted to vary the height of a central region of a gas distribution plate with respect to the periphery of the plate. In yet another embodiment, a plurality of central support devices and a plurality of mid-range support devices are adjusted to vary the height of certain regions of the gas distribution plate with respect to other regions of the gas distribution plate. In one embodiment, the contour of the gas distribution plate is altered based on changes detected within the process chamber.

10. 发明申请

WO2010048165A2 MULTIPLE GAS FEED APPARATUS AND METHOD 审中-公开
标题翻译：多气体给料装置和方法
公开(公告)号：WO2010048165A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/061303
申请日：2009-10-20
申请人： APPLIED MATERIALS INC. , TSO, Alan , TSUEI, Lun , CHO, Tom, K. , SHIEH, Brian, Sy-yuan
发明人： TSO, Alan , TSUEI, Lun , CHO, Tom, K. , SHIEH, Brian, Sy-yuan
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574
摘要： Embodiments of the present invention generally provide apparatus and methods for introducing process gases into a processing chamber at a plurality of locations. In one embodiment, a central region of a showerhead and corner regions of a showerhead are fed process gases from a central gas source with a first mass flow controller regulating the flow in the central region and a second mass flow controller regulating the flow in the corner regions. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and corner regions of the showerhead are fed process gases from a second gas source. In another embodiment, a central region of a showerhead is fed process gases from a first gas source and each corner region of the showerhead is fed process gases from a separate gas source.
摘要翻译：本发明的实施例通常提供用于将处理气体引入处理室中的多个位置的装置和方法。在一个实施例中，喷头的中心区域和喷头的角区域从中央气源被供给工艺气体，第一质量流量控制器调节中心区域中的流量，第二质量流量控制器调节拐角中的流量区域。在另一个实施例中，喷头的中心区域从第一气源供给工艺气体，并且喷头的拐角区域从第二气源供给工艺气体。在另一个实施例中，喷头的中心区域从第一气源供给工艺气体，并且喷头的每个拐角区域从单独的气源供给工艺气体。

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