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    • 2. 发明申请
    • UNIFORM DRY ETCH IN TWO STAGES
    • 在两个阶段统一烘干
    • WO2012106033A3
    • 2012-11-29
    • PCT/US2011064724
    • 2011-12-13
    • APPLIED MATERIALS INCYANG DONGQINGTANG JINGINGLE NITIN
    • YANG DONGQINGTANG JINGINGLE NITIN
    • H01L21/3065
    • H01L21/31116
    • A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.
    • 描述了从多个沟槽蚀刻氧化硅的方法,其允许在沟槽之间更均匀的蚀刻速率。 蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更光滑。 该方法包括两个干蚀刻阶段,接着是升华步骤。 第一道干法刻蚀阶段迅速除去氧化硅,并产生大量的固体残渣颗粒。 第二干蚀刻阶段慢慢地除去氧化硅并且在大的固体残余颗粒中产生小的固体残余颗粒。 在随后的升华步骤中,小的和大的固体残余物都被除去。 两个干法蚀刻阶段之间没有升华步骤。
    • 5. 发明申请
    • METHODS FOR ETCH OF METAL AND METAL-OXIDE FILMS
    • 用于蚀刻金属和金属氧化物膜的方法
    • WO2012125654A3
    • 2012-12-27
    • PCT/US2012028952
    • 2012-03-13
    • APPLIED MATERIALS INCZHANG JINGCHUNWANG ANCHUANINGLE NITIN
    • ZHANG JINGCHUNWANG ANCHUANINGLE NITIN
    • H01L21/3065
    • H01L21/31116H01J37/32422H01L21/31122H01L21/32136
    • A method of selectively etching a metal-containing film from a substrate comprising a metal-containing layer and a silicon oxide layer includes flowing a fluorine-containing gas into a plasma generation region of a substrate processing chamber, and applying energy to the fluorine-containing gas to generate a plasma in the plasma generation region. The plasma comprises fluorine radicals and fluorine ions. The method also includes filtering the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions, and flowing the reactive gas into a gas reaction region of the substrate processing chamber. The method also includes exposing the substrate to the reactive gas in the gas reaction region of the substrate processing chamber. The reactive gas etches the metal-containing layer at a higher etch rate than the reactive gas etches the silicon oxide layer.
    • 一种从包含含金属层和氧化硅层的基板选择性地蚀刻含金属膜的方法包括使含氟气体流入基板处理室的等离子体产生区,并且将能量施加到含氟 气体在等离子体产生区域中产生等离子体。 等离子体包含氟自由基和氟离子。 该方法还包括过滤等离子体以提供具有比氟离子更高浓度​​的氟自由基的反应性气体,并且使反应性气体流入基板处理室的气体反应区域。 该方法还包括将衬底暴露于衬底处理室的气体反应区域中的反应气体。 反应气体以比反应气体蚀刻氧化硅层更高的蚀刻速率蚀刻含金属层。