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1. 发明专利

JP2015053501A シリコン含有膜の平滑ＳｉＣｏｎｉエッチング有权
标题翻译： SMOOTH硅胶蚀刻含硅薄膜
公开(公告)号：JP2015053501A
公开(公告)日：2015-03-19
申请号：JP2014216327
申请日：2014-10-23
申请人：アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated , Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： TANG JING , NITIN INGLE , YANG DONGQING
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357 , H01J2237/3341
摘要：【課題】シリコン含有材料を、フッ素と比べた水素の流量比が従来技術で見られる流量比よりも大きい、または小さいSiConi(登録商標)エッチングする方法を提供する。【解決手段】エッチング後の表面粗さを低減する代替手段には、前駆体流および/またはプラズマ出力をパルス化することが含まれ、それによって相対的に高い基板温度が維持され、複数のステップでSiConi(登録商標)が実施される。これらの取組みのそれぞれは、単独または組合せで固体残留物粒径を限定することによって、エッチングされた表面の粗さを低減する。【選択図】図1
摘要翻译：要解决的问题：提供一种对含硅材料进行SiConi（R）蚀刻的方法，其与氟相比具有比现有技术中更大或更小的氢气流量比。解决方案：还原性的替代方法后蚀刻表面粗糙度包括脉冲前体流和/或等离子体功率，从而保持相对较高的衬底温度并以多个步骤执行SiConi。单独或组合的这些方法中的每一种通过限制固体残留物颗粒尺寸来减少蚀刻表面的粗糙度。

2. 发明专利

SG181669A1 SMOOTH SICONI ETCH FOR SILICON-CONTAINING FILMS 未知
公开(公告)号：SG181669A1
公开(公告)日：2012-07-30
申请号：SG2012043469
申请日：2010-11-22
申请人： APPLIED MATERIALS INC
发明人： TANG JING , INGLE NITIN , YANG DONGQING
摘要： A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

3. 发明专利

SG189944A1 UNIFORM DRY ETCH IN TWO STAGES 未知
公开(公告)号：SG189944A1
公开(公告)日：2013-07-31
申请号：SG2013029897
申请日：2011-12-13
申请人： APPLIED MATERIALS INC
发明人： YANG DONGQING , TANG JING , INGLE NITIN
摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.

4. 发明申请

WO2011115761A3 INVERTABLE PATTERN LOADING WITH DRY ETCH 审中-公开
标题翻译：不可逆图案加载干燥蚀刻
公开(公告)号：WO2011115761A3
公开(公告)日：2011-12-22
申请号：PCT/US2011027221
申请日：2011-03-04
申请人： APPLIED MATERIALS INC , TANG JING , INGLE NITIN , YANG DONGQING , VENKATARAMAN SHANKAR
发明人： TANG JING , INGLE NITIN , YANG DONGQING , VENKATARAMAN SHANKAR
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091
摘要： A method of etching silicon oxide from a narrow trench and a wide trench (or open area) is described which allows the etch in the wide trench to progress further than the etch in the narrow trench. The method includes two dry etch cycles. The first dry etch cycle involves a low intensity or abbreviated sublimation step which leaves solid residue in the narrow trench. The remaining solid residue inhibits etch progress in the narrow trench during the second dry etch cycle allowing the etch in the wide trench to overtake the etch in the narrow trench.
摘要翻译：描述了从窄沟槽和宽沟槽（或开放区域）中蚀刻氧化硅的方法，其允许宽沟槽中的蚀刻比窄沟槽中的蚀刻进一步进行。该方法包括两个干蚀刻循环。第一干蚀刻循环涉及低强度或缩写升华步骤，其在窄沟槽中留下固体残留物。剩余的固体残余物在第二干蚀刻循环期间抑制窄沟槽中的蚀刻进程，允许宽沟槽中的蚀刻超过窄沟槽中的蚀刻。

5. 发明申请

WO2011139435A3 HIGH-TEMPERATURE SELECTIVE DRY ETCH HAVING REDUCED POST-ETCH SOLID RESIDUE 审中-公开
标题翻译：具有减少后固化残留物的高温选择性干燥剂
公开(公告)号：WO2011139435A3
公开(公告)日：2012-01-26
申请号：PCT/US2011030582
申请日：2011-03-30
申请人： APPLIED MATERIALS INC , THADANI KIRAN V , TANG JING , INGLE NITIN , YANG DONGQING
发明人： THADANI KIRAN V , TANG JING , INGLE NITIN , YANG DONGQING
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32357
摘要： Methods of dry etching silicon-containing dielectric films are described. The methods include maintaining a relatively high temperature of the dielectric films while etching in order to achieve reduced solid residue on the etched surface. Partially or completely avoiding the accumulation of solid residue increases the etch rate.
摘要翻译：描述了干法蚀刻含硅介电膜的方法。这些方法包括在蚀刻时保持电介质膜的较高温度，以便在蚀刻表面上实现减少的固体残余物。部分或完全避免固体残余物的积累增加了蚀刻速率。

6. 发明申请

WO2012106033A3 UNIFORM DRY ETCH IN TWO STAGES 审中-公开
标题翻译：在两个阶段统一烘干
公开(公告)号：WO2012106033A3
公开(公告)日：2012-11-29
申请号：PCT/US2011064724
申请日：2011-12-13
申请人： APPLIED MATERIALS INC , YANG DONGQING , TANG JING , INGLE NITIN
发明人： YANG DONGQING , TANG JING , INGLE NITIN
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： A method of etching silicon oxide from a multiple trenches is described which allows more homogeneous etch rates among trenches. The surfaces of the etched silicon oxide within the trench following the etch may also be smoother. The method includes two dry etch stages followed by a sublimation step. The first dry etch stage removes silicon oxide quickly and produces large solid residue granules. The second dry etch stage remove silicon oxide slowly and produces small solid residue granules in amongst the large solid residue granules. Both the small and large solid residue are removed in the ensuing sublimation step. There is no sublimation step between the two dry etch stages.
摘要翻译：描述了从多个沟槽蚀刻氧化硅的方法，其允许在沟槽之间更均匀的蚀刻速率。蚀刻后的沟槽内的蚀刻氧化硅的表面也可以更光滑。该方法包括两个干蚀刻阶段，接着是升华步骤。第一道干法刻蚀阶段迅速除去氧化硅，并产生大量的固体残渣颗粒。第二干蚀刻阶段慢慢地除去氧化硅并且在大的固体残余颗粒中产生小的固体残余颗粒。在随后的升华步骤中，小的和大的固体残余物都被除去。两个干法蚀刻阶段之间没有升华步骤。

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