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1. 发明申请

WO2011028434A3 3D APPROACH ON BATTERY AND SUPERCAPACITOR FABRICATION BY INITIATION CHEMICAL VAPOR DEPOSITION TECHNIQUES 审中-公开
标题翻译：开发化学气相沉积技术制备电池和超级电容器的3D方法
公开(公告)号：WO2011028434A3
公开(公告)日：2011-06-30
申请号：PCT/US2010046069
申请日：2010-08-20
申请人： APPLIED MATERIALS INC , PUSHPARAJ VICTOR L , NARWANKAR PRAVIN K , NALAMASU OMKARAM
发明人： PUSHPARAJ VICTOR L , NARWANKAR PRAVIN K , NALAMASU OMKARAM
IPC分类号： H01M4/04 , H01B3/10 , H01G9/058 , H01M4/66 , H01M10/0525
CPC分类号： H01M4/661 , H01G9/0029 , H01G9/0032 , H01G9/155 , H01M4/133 , H01M4/134 , H01M4/1393 , H01M4/1395 , H01M10/0525 , H01M10/0565 , H01M10/0585 , Y02E60/13 , Y10T29/49115
摘要： Methods and apparatus for forming energy storage devices are provided. In one embodiment a method of producing an energy storage device is provided. The method comprises positioning an anodic current collector into a processing region, depositing one or more three-dimensional electrodes separated by a finite distance on a surface of the anodic current collector such that portions of the surface of the anodic current collector remain exposed, depositing a conformal polymeric layer over the anodic current collector and the one or more three-dimensional electrodes using iCVD techniques comprising flowing a gaseous monomer into the processing region, flowing a gaseous initiator into the processing region through a heated filament to form a reactive gas mixture of the gaseous monomer and the gaseous initiator, wherein the heated filament is heated to a temperature between about 300C and about 600C, and depositing a conformal layer of cathodic material over the conformal polymeric layer.
摘要翻译：提供了用于形成能量存储装置的方法和设备。在一个实施例中，提供了一种制造能量存储装置的方法。该方法包括将阳极集流器定位在处理区域中，在阳极集流器的表面上沉积一个或多个以有限距离分开的三维电极，使得阳极集流器的表面的一部分保持暴露，沉积使用iCVD技术在所述阳极集电器和所述一个或多个三维电极上形成保形聚合物层，所述方法包括使气态单体流入所述处理区域，使气态引发剂通过加热丝流入所述处理区域以形成反应气体混合物气态单体和气态引发剂，其中将加热的丝加热至约30℃至约60℃的温度，并在共形聚合物层上沉积阴极材料的共形层。

2. 发明申请

WO2011035157A3 APPARATUS AND METHODS FOR FORMING ENERGY STORAGE AND PHOTOVOLTAIC DEVICES IN A LINEAR SYSTEM 审中-公开
标题翻译：用于在线性系统中形成能量存储和光伏器件的装置和方法
公开(公告)号：WO2011035157A3
公开(公告)日：2011-07-14
申请号：PCT/US2010049335
申请日：2010-09-17
申请人： APPLIED MATERIALS INC , PUSHPARAJ VICTOR L , NARWANKAR PRAVIN K , HAAS DIETER , THAKUR BIPIN , ARCOT MAHESH , GUJAR VIKAS , NALAMASU OMKARAM
发明人： PUSHPARAJ VICTOR L , NARWANKAR PRAVIN K , HAAS DIETER , THAKUR BIPIN , ARCOT MAHESH , GUJAR VIKAS , NALAMASU OMKARAM
IPC分类号： H01L31/042
CPC分类号： C23C16/545 , B82Y10/00 , B82Y40/00 , H01L31/035227 , H01L31/075 , H01L31/1876 , H01L31/206 , H01L51/0048 , H01L51/4213 , Y02E10/548 , Y02E10/549 , Y02P70/521
摘要： A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.
摘要翻译：提供了用于在基底上形成复合材料的方法和设备。复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。在一个实施方案中，基材为细长片材或网状材料的形式，并且该装置包括供应辊和卷取辊以在形成复合材料之前和之后支承网。纤维网被引导通过各种处理室以形成复合材料。在另一个实施方案中，大规模基材包含离散基材。离散的基板被支撑在传送系统上，或者由机器人处理，机器人将基板引导穿过处理室以在基板上形成复合材料。该复合材料可用于形成能量存储装置和/或光伏装置。

3. 发明申请

WO2004070796A9 TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMAL ANNEALING WITH AMMONIA UNDER ULTRA-LOW PRESSURE 审中-公开
标题翻译：在超低压下氨氮快速热退火氧化亚氮化合物中的氮气分布
公开(公告)号：WO2004070796A9
公开(公告)日：2004-11-04
申请号：PCT/US2004003442
申请日：2004-02-04
申请人： APPLIED MATERIALS INC , NARWANKAR PRAVIN K , MINER GARY , LEPERT ARAUD
发明人： NARWANKAR PRAVIN K , MINER GARY , LEPERT ARAUD
IPC分类号： H01L21/28 , H01L21/3105 , H01L21/314 , H01L21/334 , H01L29/51 , H01L
CPC分类号： H01L21/28185 , H01L21/3105 , H01L21/3144 , H01L29/518 , H01L29/66181
摘要： A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
摘要翻译：一种形成包含氮的电介质膜的方法。该方法包括使用氮化气体和快速热退火工艺将氮引入电介质膜中，其中快速热退火工艺使用等于或小于约10乇的超低压。

4. 发明申请

WO2007030673A3 VAPOR DEPOSITION OF HAFNIUM SILICATE MATERIALS WITH TRIS(DIMETHYLAMIDO)SILANE 审中-公开
标题翻译：三（二甲基酰氨基）硅烷与硅酸铪材料的气相沉积
公开(公告)号：WO2007030673A3
公开(公告)日：2007-06-21
申请号：PCT/US2006034953
申请日：2006-09-07
申请人： APPLIED MATERIALS INC , MUTHUKRISHNAN SHANKAR , GOYANI TEJAL , SHARANGPANI RAHUL , KHER SHREYAS S , NARWANKAR PRAVIN K , AHMED KHALED Z , MA YI
发明人： MUTHUKRISHNAN SHANKAR , GOYANI TEJAL , SHARANGPANI RAHUL , KHER SHREYAS S , NARWANKAR PRAVIN K , AHMED KHALED Z , MA YI
IPC分类号： H01L21/31 , C30B29/32 , C30B29/54
CPC分类号： C23C16/308 , C23C16/401 , C23C16/56
摘要： In one embodiment, a method for forming a morphologically stable dielectric material is provided which includes exposing a substrate to a hafnium precursor, a silicon precursor and an oxidizing gas to form hafnium silicate material during a chemical vapor deposition (CVD) process and subsequently and optionally exposing the substrate to a post deposition anneal, a nitridation process and a thermal annealing process. In some examples, the hafnium and silicon precursors used during a metal-organic CVD (MOCVD) process are alkylamino compounds, such as tetrakis(diethylamido) hafnium (TDEAH) and tris(dimethylamido) silane (Tris-DMAS). In another embodiment, other metal precursors may be used to form a variety of metal silicates containing tantalum, titanium, aluminum, zirconium, lanthanum, or combinations thereof.
摘要翻译：在一个实施方案中，提供了形成形态稳定的介电材料的方法，其包括在化学气相沉积（CVD）过程期间将衬底暴露于铪前体，硅前体和氧化气体以形成硅酸铪材料，并且随后和任选地将衬底暴露于后沉积退火，氮化工艺和热退火工艺。在一些实例中，在金属有机CVD（MOCVD）工艺期间使用的铪和硅前体是烷基氨基化合物，例如四（二乙基氨基）铪（TDEAH）和三（二甲基氨基）硅烷（Tris-DMAS）。在另一个实施方案中，可以使用其他金属前体来形成各种含有钽，钛，铝，锆，镧或其组合的金属硅酸盐。

5. 发明申请

WO2011034751A2 HOT WIRE CHEMICAL VAPOR DEPOSITION (CVD) INLINE COATING TOOL 审中-公开
标题翻译：热线化学气相沉积（CVD）在线涂装工具
公开(公告)号：WO2011034751A2
公开(公告)日：2011-03-24
申请号：PCT/US2010047972
申请日：2010-09-07
申请人： APPLIED MATERIALS INC , HAAS DIETER , NARWANKAR PRAVIN K , THAKUR RANDHIR P S
发明人： HAAS DIETER , NARWANKAR PRAVIN K , THAKUR RANDHIR P S
IPC分类号： H01L21/205 , C23C16/54
CPC分类号： C23C16/24 , C23C16/54 , H01L21/02532 , H01L21/0262
摘要： Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.
摘要翻译：本文提供了热线化学气相沉积（HWCVD）的方法和装置。在一些实施例中，在线HWCVD工具可以包括用于通过线性处理工具移动衬底的线性输送机; 和多个HWCVD源，多个HWCVD源被定位成与线性传送器平行并与其间隔开，并且被配置为当衬底沿着线性传送器移动时将材料沉积在衬底的表面上; 其中所述衬底被多个HWCVD源涂覆而不破坏真空。在一些实施例中，涂覆基底的方法可以包括在移动通过第一沉积室的基底上沉积来自HWCVD源的第一材料; 将衬底从第一沉积室移动到第二沉积室; 以及将第二材料从第二HWCVD源沉积在移动通过第二沉积室的衬底上。

6. 发明申请

WO2008028082A3 PRECURSORS AND HARDWARE FOR CVD AND ALD 审中-公开
标题翻译： CVD和ALD的前体和硬件
公开(公告)号：WO2008028082A3
公开(公告)日：2008-04-24
申请号：PCT/US2007077301
申请日：2007-08-30
申请人： APPLIED MATERIALS INC , KHER SHREYAS S , NGUYEN SON T , NARWANKAR PRAVIN K , TANDON SANJEEV , JUMPER STEVE , SERMONA VINCENT
发明人： KHER SHREYAS S , NGUYEN SON T , NARWANKAR PRAVIN K , TANDON SANJEEV , JUMPER STEVE , SERMONA VINCENT
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/405 , C23C16/45544 , C23C16/45553 , C23C16/45561 , C23C16/45582
摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
摘要翻译：本发明一般包括用于沉积高k电介质或金属栅极材料的装置，其中可使用有毒，易燃或发火前体。排气管道可以放置在液体前驱体或固体前驱体输送柜，气体面板和水蒸气发生器区域。排气管允许技术人员进入设备，而不会过度暴露于可能收集在液体输送柜，气体板和水蒸气发生器区域内的有毒，易燃或易燃气体。

7. 发明申请

WO2013033443A2 BEOL INTERCONNECT WITH CARBON NANOTUBES 审中-公开
标题翻译： BEOL与碳纳米管相互连接
公开(公告)号：WO2013033443A2
公开(公告)日：2013-03-07
申请号：PCT/US2012053202
申请日：2012-08-30
申请人： APPLIED MATERIALS INC , GRIFFITH CRUZ JOE , NARWANKAR PRAVIN K , SUNDARRAJAN ARVIND , NARASIMHAN MURALI , SREEKALA SUBBALAKSHMI , PUSHPARAJ VICTOR
发明人： GRIFFITH CRUZ JOE , NARWANKAR PRAVIN K , SUNDARRAJAN ARVIND , NARASIMHAN MURALI , SREEKALA SUBBALAKSHMI , PUSHPARAJ VICTOR
IPC分类号： H01L21/28 , B82B3/00
CPC分类号： H01L21/76877 , A61K8/46 , A61K8/8182 , A61K2800/884 , A61Q9/04 , B82Y40/00 , H01L21/76843 , H01L23/5384 , H01L29/413 , H01L2924/0002 , Y10S977/742 , H01L2924/00
摘要： An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.
摘要翻译：具有BEOL互连的集成电路可以包括：包括半导体器件的衬底; 在所述衬底的表面上的第一层电介质，所述第一层电介质包括用于与所述半导体器件电接触的填充通孔; 以及在所述第一介电层上的第二电介质层，所述第二介电层包括垂直于所述填充通孔的纵向轴线延伸的沟槽，所述沟槽填充有互连线，所述互连线包含交联的碳纳米管并且物理地和电连接到填充的通孔。使用包括前体气体分压大于碳纳米管生长从平行碳纳米管生长模式转变为交联碳的过渡分压的生长条件，将交联的CNT生长在沟槽底部的催化剂颗粒上纳米管生长模式。

8. 发明申请

WO2009154836A2 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM 审中-公开
标题翻译：制造高介电常数膜的方法
公开(公告)号：WO2009154836A2
公开(公告)日：2009-12-23
申请号：PCT/US2009038402
申请日：2009-03-26
申请人： APPLIED MATERIALS INC , KHER SHREYAS S , NARWANKAR PRAVIN K , AHMED KHALED Z , MA YI
发明人： KHER SHREYAS S , NARWANKAR PRAVIN K , AHMED KHALED Z , MA YI
CPC分类号： H01L21/31645 , C23C14/083 , C23C16/56 , H01L21/3141
摘要： Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.
摘要翻译：公开了使用含有超高纯度铪的有机金属化合物制造高K（介电常数）膜的方法。还描述了包含用高纯度铪含有有机金属化合物制成的高K膜的装置。

9. 发明申请

WO2004070796A3 TAILORING NITROGEN PROFILE IN SILICON OXYNITRIDE USING RAPID THERMAL ANNEALING WITH AMMONIA UNDER ULTRA-LOW PRESSURE 审中-公开
标题翻译：在超低压下使用快速热退火与氨氧化物在硅氧烷中定型氮化物
公开(公告)号：WO2004070796A3
公开(公告)日：2005-06-02
申请号：PCT/US2004003442
申请日：2004-02-04
申请人： APPLIED MATERIALS INC , NARWANKAR PRAVIN K , MINER GARY , LEPERT ARAUD
发明人： NARWANKAR PRAVIN K , MINER GARY , LEPERT ARAUD
IPC分类号： H01L21/28 , H01L21/3105 , H01L21/314 , H01L21/334 , H01L29/51 , C23C16/30 , H01L21/318
CPC分类号： H01L21/28185 , H01L21/3105 , H01L21/3144 , H01L29/518 , H01L29/66181
摘要： A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.
摘要翻译：一种形成包括氮的电介质膜的方法。该方法包括使用氮化气体和快速热退火工艺将氮合并到电介质膜中，其中使用等于或小于约10Torr的超低压用于快速热退火工艺。

10. 发明专利

JP2001244439A METHOD OF FORMING METAL ELECTRODE 失效
公开(公告)号：JP2001244439A
公开(公告)日：2001-09-07
申请号：JP2000397117
申请日：2000-12-27
申请人： APPLIED MATERIALS INC
发明人： NARWANKAR PRAVIN K , NICKELS ANNABEL , JIN XIAOLIANG , UPADHYAYA DEEPAK , WANG YAXIN
IPC分类号： C23C16/18 , C23C16/40 , H01L21/02 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a capacitor structure having a bottom electrode, an insulator, and a top electrode, and a method of manufacturing it. SOLUTION: The bottom and top electrodes preferably include a metal part and a conducting oxygen containing metal part. In one embodiment, a layer of ruthenium is deposited to form the bottom electrode. Prior to deposition of the insulator, the ruthenium is annealed in an oxygen containing atmosphere. Then, the insulator is deposited on the oxygen containing ruthenium layer. Formation of the top electrode includes depositing a first metal on the insulator, annealing the first metal, and depositing a second metal. The first and second metals may be ruthenium.

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