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1. 发明申请

WO2007011568A3 CONTACT CLEAN BY REMOTE PLASMA AND REPAIR OF SILICIDE SURFACE 审中-公开
标题翻译：通过远程等离子体清洁和清洁硅胶表面
公开(公告)号：WO2007011568A3
公开(公告)日：2008-01-10
申请号：PCT/US2006026719
申请日：2006-07-10
申请人： APPLIED MATERIALS INC , LU XINLIANG , KAO CHIEN-TEH , LAI CHIUKIN STEVE , CHANG MEI
发明人： LU XINLIANG , KAO CHIEN-TEH , LAI CHIUKIN STEVE , CHANG MEI
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/0206 , H01L21/02063 , H01L21/02068 , H01L21/28061 , H01L21/321 , H01L29/665 , H01L29/6659 , Y10S438/906
摘要： Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.
摘要翻译：提供了处理金属硅化物表面或层的回收方法。在至少一个实施例中，清洁具有设置在其上的至少部分氧化的金属硅化物表面的衬底以除去氧化区域以提供改变的金属硅化物表面。然后在足以回收金属硅化物表面的条件下将改变的金属硅化物表面暴露于一种或多种含硅化合物。

2. 发明申请

WO2010059790A3 INTEGRATION SEQUENCES WITH TOP PROFILE MODIFICATION 审中-公开
标题翻译：整合顺序与顶级配置文件修改
公开(公告)号：WO2010059790A3
公开(公告)日：2010-08-05
申请号：PCT/US2009065088
申请日：2009-11-19
申请人： APPLIED MATERIALS INC , KAO CHIEN-TEH , LU XINLIANG , GE ZHENBIN , CHANG MEI , HUNG HOIMAN RAYMOND , INGLE NITIN
发明人： KAO CHIEN-TEH , LU XINLIANG , GE ZHENBIN , CHANG MEI , HUNG HOIMAN RAYMOND , INGLE NITIN
IPC分类号： H01L21/76 , H01L21/306
CPC分类号： H01L21/76232 , H01L21/67219 , H01L27/11521
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.
摘要翻译：本发明的实施例总体上涉及用于处理半导体衬底的设备和方法。特别地，本发明的实施例涉及用于形成具有圆底的凹陷的浅沟槽隔离的装置和方法。本发明的一个实施例包括通过从填充的沟槽结构去除一部分材料并且使凹陷的底部角落倒圆来在填充的沟槽结构中形成凹槽。通过在衬底上方沉积填充在沟槽结构中的相同材料的共形层并从凹槽的侧壁去除材料的共形层来执行圆角底部拐角。

3. 发明申请

WO2006069085A3 AN IN-SITU CHAMBER CLEAN PROCESS TO REMOVE BY-PRODUCT DEPOSITS FROM CHEMICAL VAPOR ETCH CHAMBER 审中-公开
标题翻译：从化学蒸气蚀刻室中移除副产物沉淀物的现场室清洁方法
公开(公告)号：WO2006069085A3
公开(公告)日：2009-06-11
申请号：PCT/US2005046226
申请日：2005-12-20
申请人： APPLIED MATERIALS INC , KAO CHIEN-TEH , CHOU JING-PEI CONNIE , UMOTOY SALVADOR P , CHANG MEI , YUAN XIAOXIONG JOHN , CHANG YU , LU XINLIANG , PHAN SEE-ENG , KUANG WILLIAM , TZU GWO-CHUAN , OR DAVID T
发明人： KAO CHIEN-TEH , CHOU JING-PEI CONNIE , UMOTOY SALVADOR P , CHANG MEI , YUAN XIAOXIONG JOHN , CHANG YU , LU XINLIANG , PHAN SEE-ENG , KUANG WILLIAM , TZU GWO-CHUAN , OR DAVID T
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01J37/3244 , B08B7/00 , B08B7/0035 , H01J37/32009 , H01J37/32357 , H01J37/32522 , H01J37/32862 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A method and apparatus for cleaning a processing chamber comprising blocking a flow of cooling fluid to a channel within a support member within a processing chamber, elevating the support member to be within about 0.1 inches of a gas distribution plate, heating the gas distribution plate, and introducing a thermally conductive gas through the gas distribution plate into the processing chamber. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.
摘要翻译：一种用于清洁处理室的方法和装置，包括将冷却流体流阻塞到处理室内的支撑构件内的通道，将支撑构件升高到气体分配板的约0.1英寸以内，加热气体分配板，并且将导热气体通过所述气体分配板引入所述处理室。在一个方面，所述腔室包括室主体和至少部分地设置在所述室主体内的适于在其上支撑基板的支撑组件。所述室还包括设置在所述室主体的上表面上的盖组件。盖组件包括顶板和在其间限定等离子体腔的气体输送组件，其中气体输送组件适于加热衬底。具有U形等离子体区域的远程等离子体源连接到气体输送组件。

4. 发明申请

WO2010042552A2 SELECTIVE ETCHING OF SILICON NITRIDE 审中-公开
标题翻译：硅酸盐的选择性蚀刻
公开(公告)号：WO2010042552A2
公开(公告)日：2010-04-15
申请号：PCT/US2009059743
申请日：2009-10-06
申请人： APPLIED MATERIALS INC , LU XINLIANG , YANG HAICHUN , GE ZHENBIN , LU NAN , OR DAVID T , KAO CHIEN-TEH , CHANG MEI
发明人： LU XINLIANG , YANG HAICHUN , GE ZHENBIN , LU NAN , OR DAVID T , KAO CHIEN-TEH , CHANG MEI
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.
摘要翻译：本文提供了用于蚀刻包括硅和氮的介电层的方法。在一些实施例中，这样的方法可以包括提供具有布置在其上的包含硅和氮的电介质层的衬底，使用远程等离子体从包含氢（H 2）和三氟化氮（NF 3）的工艺气体形成反应物种; 并使用反应性物质蚀刻电介质层。在一些实施例中，氧化物层邻近电介质层设置。在一些实施例中，可以调节处理气体的流速比，使得电介质层与至少一个氧化物层或衬底的蚀刻选择性在约0.8至约4之间。

5. 发明申请

WO2007092130A3 DRY ETCH AND EPITAXIAL DEPOSITION PROCESS AND APPARATUS 审中-公开
标题翻译：干蚀和外延沉积工艺和设备
公开(公告)号：WO2007092130A3
公开(公告)日：2007-09-27
申请号：PCT/US2007001031
申请日：2007-01-16
申请人： APPLIED MATERIALS INC , LAM ANDREW , KIM YIHWAN , KUPPURAO SATHEESH , PHAN SEE-ENG , LU XINLIANG , KAO CHIEN-TEH
发明人： LAM ANDREW , KIM YIHWAN , KUPPURAO SATHEESH , PHAN SEE-ENG , LU XINLIANG , KAO CHIEN-TEH
IPC分类号： C23C16/452 , C23C16/02 , C23C16/505 , H01L21/00 , H01L21/02 , H01L21/306
CPC分类号： C23C16/452 , C23C16/0236 , C23C16/505 , H01L21/31116 , H01L21/67069
摘要： An epitaxial deposition process including a dry etch process, followed by an epitaxial deposition process is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber (100) to remove surface oxides. A gas mixture is introduced through gas inlets (142) into a plasma cavity (149), and the gas mixture is energized to form a plasma of reactive gas in the plasma cavity. The reactive gas enters into the processing zone (110) and reacts with the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose an epitaxy.surface. The epitaxy surface is substantially free of oxides. Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.
摘要翻译：公开了一种外延沉积工艺，其包括干式蚀刻工艺，随后进行外延沉积工艺。干蚀刻工艺涉及将待清洗的基底放置在处理室（100）中以去除表面氧化物。将气体混合物通过气体入口（142）引入等离子体腔（149）中，并且气体混合物被激发以在等离子体腔中形成反应气体的等离子体。反应气体进入处理区（110）并与基板反应，形成薄膜。加热衬底以蒸发薄膜并暴露外延表面。外延表面基本上不含氧化物。然后使用外延沉积在外延表面上形成外延层。

6. 发明申请

WO2011139775A3 PROCESS CHAMBER LID DESIGN WITH BUILT-IN PLASMA SOURCE FOR SHORT LIFETIME SPECIES 审中-公开
标题翻译：用于短期生物物种的内置等离子体源的过程室盖设计
公开(公告)号：WO2011139775A3
公开(公告)日：2012-03-01
申请号：PCT/US2011034147
申请日：2011-04-27
申请人： APPLIED MATERIALS INC , KAO CHIEN-TEH , LAM HYMAN W H , CHANG MEI , OR DAVID T , DENNY NICHOLAS R , YUAN XIAOXIONG JOHN
发明人： KAO CHIEN-TEH , LAM HYMAN W H , CHANG MEI , OR DAVID T , DENNY NICHOLAS R , YUAN XIAOXIONG JOHN
IPC分类号： H01L21/205
CPC分类号： C23C16/45536 , C23C16/45565 , C23C16/505 , H01J37/32091 , H01J37/3244
摘要： Embodiments of the invention generally relate to an apparatus and a method for depositing materials, and more particularly to a vapor deposition chamber configured to deposit a material during a plasma-enhanced process. In one embodiment a chamber for processing one or more substrates is provided. The chamber body comprises a chamber body defining a process volume, a substrate support disposed in the process volume and configured to support one or more substrates, a process lid assembly disposed over the substrate support, wherein the process lid assembly has a plasma cavity configured to generate a plasma and provide one or more radical species to the process volume, a RF (radio frequency) power source coupled to the gas distribution assembly, a plasma forming gas source coupled with the process lid assembly, and a reactant gas source coupled with the process lid assembly.
摘要翻译：本发明的实施方案一般涉及用于沉积材料的装置和方法，更具体地涉及被配置为在等离子体增强过程中沉积材料的气相沉积室。在一个实施例中，提供了用于处理一个或多个基板的室。室主体包括限定处理体积的室主体，设置在处理容积中并且被配置为支撑一个或多个基板的基板支撑件，设置在基板支撑件上方的过程盖组件，其中处理盖组件具有被配置为产生等离子体并且为处理体积提供一个或多个自由基物质，耦合到气体分配组件的RF（射频）电源，与处理盖组件耦合的等离子体形成气体源，以及与工艺盖组件。

7. 发明申请

WO2010059868A2 METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION 审中-公开
标题翻译：用于打印和通过轮廓修改的方法和设备
公开(公告)号：WO2010059868A2
公开(公告)日：2010-05-27
申请号：PCT/US2009065208
申请日：2009-11-19
申请人： APPLIED MATERIALS INC , CHANG MEI , KAO CHIEN-TEH , LU XIN LIANG , GE ZHENBIN
发明人： CHANG MEI , KAO CHIEN-TEH , LU XIN LIANG , GE ZHENBIN
IPC分类号： H01L21/28 , H01L21/336
CPC分类号： H01J37/3244 , H01L21/3065 , H01L21/31116 , H01L21/76843 , H01L21/76865 , H01L21/76877 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1683 , H01L2221/1063
摘要： Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.
摘要翻译：本发明的实施例总体上涉及用于处理半导体衬底的设备和方法。特别地，本发明的实施例涉及在填充沟槽和通孔之前用于沟槽和通孔轮廓修改的方法和设备。本发明的一个实施例包括通过将沟槽结构暴露于蚀刻剂来形成牺牲层以夹断沟槽结构的顶部开口。在一个实施例中，蚀刻剂被配置成通过与第一材料反应并产生形成牺牲层的副产物来去除第一材料。

8. 发明申请

WO2009085958A3 PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIVE OXIDE GROWTH 审中-公开
标题翻译：通过等离子体清洗方法形成的钝化层减少原生氧化物生长
公开(公告)号：WO2009085958A3
公开(公告)日：2009-09-03
申请号：PCT/US2008087436
申请日：2008-12-18
申请人： APPLIED MATERIALS INC , YANG HAICHUN , LU XIN LIANG , KAO CHIEN-TEH , CHANG MEI
发明人： YANG HAICHUN , LU XIN LIANG , KAO CHIEN-TEH , CHANG MEI
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/02068 , H01L21/31116 , H01L21/76224 , H01L29/665 , H01L29/6656 , H01L29/78
摘要： Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80°C or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100°C or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.
摘要翻译：本文描述的实施例提供了用于去除衬底上的自然氧化物表面同时钝化下面的衬底表面的方法。在一个实施例中，提供了一种方法，其包括将包含氧化物层的衬底定位在处理室内，将衬底的第一温度调节至约80℃或更低，从处理室内的气体混合物产生清洁等离子体，使得气体混合物含有NH 3 / NF 3摩尔比为约10或更大的氨和三氟化氮，并将清洗等离子体冷凝到基材上。含有六氟硅酸铵的薄膜在等离子体清洁过程中部分地由天然氧化物形成。该方法还包括在处理室内将衬底加热至约100℃或更高的第二温度，同时从衬底上除去薄膜并在其上形成钝化表面。

9. 发明专利

JP2013175745A Epitaxial deposition process and apparatus 审中-公开
标题翻译：外延沉积工艺和设备
公开(公告)号：JP2013175745A
公开(公告)日：2013-09-05
申请号：JP2013076946
申请日：2013-04-02
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： ANDREW LAM , KIM YIHWAN , SATHEESH KUPPURAO , PHAN SEE-ENG , LU XINLIANG , KAO CHIEN-TEH
IPC分类号： H01L21/205 , C23C16/02 , H01L21/203 , H01L21/304 , H01L21/3065
CPC分类号： C23C16/452 , C23C16/0236 , C23C16/505 , H01L21/31116 , H01L21/67069
摘要： PROBLEM TO BE SOLVED: To provide an epitaxial deposition process which includes an epitaxial deposition process following a dry etching process.SOLUTION: A dry etching process includes the step of disposing a substrate to be cleaned in a process chamber and removing a surface oxide. A gas mixture is introduced into a plasma cavity and the gas mixture is excited to generate plasma of reactive gas in the plasma cavity. The reactive gas enters the process chamber and reacts with the substrate to form a thin film. The substrate is heated to evaporate the thin film and an epitaxy surface is exposed. The epitaxy surface does not substantially contain an oxide. Subsequently, an epitaxial layer is formed on the epitaxy surface using epitaxial deposition.
摘要翻译：要解决的问题：提供一种外延沉积工艺，其包括在干蚀刻工艺之后的外延沉积工艺。解决方案：干蚀刻工艺包括将待清洁的基板设置在处理室中并除去表面氧化物的步骤。将气体混合物引入等离子体腔中，并且激发气体混合物以在等离子体腔中产生反应气体的等离子体。反应气体进入处理室并与基板反应以形成薄膜。将衬底加热以蒸发薄膜并暴露外延表面。外延表面基本上不含氧化物。随后，使用外延沉积在外延表面上形成外延层。

10. 发明专利

JP2001085418A REMOTE PLASMA CLEANING METHOD FOR PROCESSING CHAMBER 失效
公开(公告)号：JP2001085418A
公开(公告)日：2001-03-30
申请号：JP2000201117
申请日：2000-07-03
申请人： APPLIED MATERIALS INC
发明人： RAJAGOPALAN RAVI , LIU PATRICIA M , NARWANKAN PRAVIN K , TRAN HUYEN T , KRISHNARAJ PADMANABHAN , ABLAO ALAN , CASPER TIM , SAHIN TURGIT , KAO CHIEN-TEH
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , C23C16/511 , C23C16/52 , H01J9/38 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To reduce gas consumption by removing a volatile composition comprising a deposit, formed in a second region of a processing chamber from the processing chamber. SOLUTION: A processing chamber 10 is divided into first and second regions 24 and 26. The communication of a fluid between the first and second regions 24 and 26 is increased so that a deposit in the second region 26 reacts with reactive species, forming a volatile composition from the deposit formed in the second region 26. The volatile composition, formed from the deposit in the second region 26 of the process chamber 10, is removed from the processing chamber 10. Since the gas consumption is reduced, a gas supply cost as well as gas disposition cost are reduced.

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