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1. 发明申请

WO2006069085A3 AN IN-SITU CHAMBER CLEAN PROCESS TO REMOVE BY-PRODUCT DEPOSITS FROM CHEMICAL VAPOR ETCH CHAMBER 审中-公开
标题翻译：从化学蒸气蚀刻室中移除副产物沉淀物的现场室清洁方法
公开(公告)号：WO2006069085A3
公开(公告)日：2009-06-11
申请号：PCT/US2005046226
申请日：2005-12-20
申请人： APPLIED MATERIALS INC , KAO CHIEN-TEH , CHOU JING-PEI CONNIE , UMOTOY SALVADOR P , CHANG MEI , YUAN XIAOXIONG JOHN , CHANG YU , LU XINLIANG , PHAN SEE-ENG , KUANG WILLIAM , TZU GWO-CHUAN , OR DAVID T
发明人： KAO CHIEN-TEH , CHOU JING-PEI CONNIE , UMOTOY SALVADOR P , CHANG MEI , YUAN XIAOXIONG JOHN , CHANG YU , LU XINLIANG , PHAN SEE-ENG , KUANG WILLIAM , TZU GWO-CHUAN , OR DAVID T
IPC分类号： H01L21/00 , C23C14/00 , C23C16/00
CPC分类号： H01J37/3244 , B08B7/00 , B08B7/0035 , H01J37/32009 , H01J37/32357 , H01J37/32522 , H01J37/32862 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： A method and apparatus for cleaning a processing chamber comprising blocking a flow of cooling fluid to a channel within a support member within a processing chamber, elevating the support member to be within about 0.1 inches of a gas distribution plate, heating the gas distribution plate, and introducing a thermally conductive gas through the gas distribution plate into the processing chamber. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.
摘要翻译：一种用于清洁处理室的方法和装置，包括将冷却流体流阻塞到处理室内的支撑构件内的通道，将支撑构件升高到气体分配板的约0.1英寸以内，加热气体分配板，并且将导热气体通过所述气体分配板引入所述处理室。在一个方面，所述腔室包括室主体和至少部分地设置在所述室主体内的适于在其上支撑基板的支撑组件。所述室还包括设置在所述室主体的上表面上的盖组件。盖组件包括顶板和在其间限定等离子体腔的气体输送组件，其中气体输送组件适于加热衬底。具有U形等离子体区域的远程等离子体源连接到气体输送组件。

2. 发明申请

WO2013003266A3 SUBSTRATE SUPPORT WITH SUBSTRATE HEATER AND SYMMETRIC RF RETURN 审中-公开
标题翻译：基板加热器和对称RF返回基板支持
公开(公告)号：WO2013003266A3
公开(公告)日：2013-03-21
申请号：PCT/US2012043967
申请日：2012-06-25
申请人： APPLIED MATERIALS INC , CHANG YU , TZU GWO-CHUAN , CUI ANQING , KUANG WILLIAM W , CUVALCI OLKAN
发明人： CHANG YU , TZU GWO-CHUAN , CUI ANQING , KUANG WILLIAM W , CUVALCI OLKAN
IPC分类号： H01L21/205 , H01L21/3065 , H01L21/683
CPC分类号： F27B17/0025 , H01J37/32091 , H01J37/32715 , H01L21/67103 , H01L21/67248
摘要： Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a substrate support surface and a shaft; an RF electrode disposed in the substrate support proximate the substrate support surface to receive RF current from an RF source; a heater disposed proximate the substrate support surface to provide heat to a substrate when disposed on the substrate support surface, the heater having one or more conductive lines to provide power to the heater; a thermocouple to measure the temperature of a substrate when disposed on the substrate support surface; and a conductive element having an interior volume with the one or more conductive lines and the thermocouple disposed through the interior volume, the conductive element coupled to the RF electrode and having an electric field of about zero in the interior volume when RF current is provided to the conductive element.
摘要翻译：这里提供了用于处理衬底的设备。在一些实施例中，衬底支撑件包括衬底支撑表面和轴; RF电极，所述RF电极设置在靠近所述衬底支撑表面的所述衬底支撑件中以接收来自RF源的RF电流; 加热器，所述加热器设置在所述基板支撑表面附近，以当设置在所述基板支撑表面上时向基板提供热量，所述加热器具有一个或多个导电线以向所述加热器提供功率; 当布置在基板支撑表面上时测量基板的温度的热电偶; 以及具有内部容积的导电元件，其中所述一个或多个导电线和所述热电偶设置为穿过所述内部容积，所述导电元件联接至所述RF电极并且当向所述RF电极提供RF电流时在所述内部容积中具有大约零的电场导电元件。

3. 发明专利

JP2002329674A VALVE CONTROL SYSTEM FOR SEMICONDUCTOR TREATMENT CHAMBER 审中-公开
公开(公告)号：JP2002329674A
公开(公告)日：2002-11-15
申请号：JP2002109810
申请日：2002-03-07
申请人： APPLIED MATERIALS INC
发明人： LU SIQING , CHANG YU , SUN DONGXI , DANG VINH , YANG MICHAEL X , CHANG ANZHONG , NGUYEN ANH N , MIN SHI
IPC分类号： C23C16/52 , G05D7/06 , H01L21/02 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a valve control system for a semiconductor treatment chamber. SOLUTION: This valve control system 10 is provided with a system control computer 18, and a plurality of valves 12 which are related to a treatment chamber and electrically controlled. Further, the system 10 has a programmable logic controller(PLC) 20 which communicates with the system control computer 18 and operationally connected with the electrically controlled valves 12. Refresh time for controlling the valves is at most 10 msec. As a result, controlling operation of the valves does not make the time and term which are necessary for very fast repetition cycles in a deposition process of an atom layer remarkably. A hardware interlock 34 is realized by an output power source(PS) 32 of the programmable logic controller 20.

4. 发明专利

SG11201702258TA ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID 未知
公开(公告)号：SG11201702258TA
公开(公告)日：2017-04-27
申请号：SG11201702258T
申请日：2015-09-17
申请人： APPLIED MATERIALS INC
发明人： CUI ANQING , GUNGOR FARUK , WU DIEN-YEH , JANGRA VIKAS , RASHEED MUHAMMAD M , TANG WEI V , YANG YIXIONG , YUAN XIAOXIONG , BU KYOUNG-HO , GANDIKOTA SRINIVAS , CHANG YU , KUANG WILLIAM W
IPC分类号： H01L21/205

5. 发明专利

SG10201903080PA ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID 未知
公开(公告)号：SG10201903080PA
公开(公告)日：2019-05-30
申请号：SG10201903080P
申请日：2015-09-17
申请人： APPLIED MATERIALS INC
发明人： CUI ANQING , GUNGOR FARUK , WU DIEN-YEH , JANGRA VIKAS , RASHEED MUHAMMAD M , TANG WEI V , YANG YIXIONG , YUAN XIAOXIONG , BU KYOUNG-HO , GANDIKOTA SRINIVAS , CHANG YU , KUANG WILLIAM W
摘要： ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel. [Figure 1C]

6. 发明专利

SG11201706020QA SUBSTRATE SUPPORT WITH IMPROVED RF RETURN 未知
公开(公告)号：SG11201706020QA
公开(公告)日：2017-09-28
申请号：SG11201706020Q
申请日：2016-02-11
申请人： APPLIED MATERIALS INC
发明人： KAMATH ARAVIND MIYAR , TSAI CHENG-HSIUNG , RAVI JALLEPALLY , MATSUSHITA TOMOHARU , CHANG YU
IPC分类号： H01L21/683 , H01L21/67
摘要： Apparatus for processing a substrate are provided herein. In some embodiments, a substrate support includes a body having a support surface; an RF electrode disposed in the body proximate the support surface to receive RF current from an RF source; a shaft to support the body; a conductive element having an interior volume and extending through the shaft, wherein the conductive element is coupled to the RF electrode; and an RF gasket; wherein the conductive element includes features that engage the RF gasket to return the RF current to ground.

7. 发明专利

AU2003293526A1 METHOD AND APPARATUS FOR MEASURING THICKNESS OF A TEST OBJECT BETWEEN TWO EDDY CURRENT SENSOR HEADS 未知
公开(公告)号：AU2003293526A1
公开(公告)日：2004-07-09
申请号：AU2003293526
申请日：2003-12-12
申请人： APPLIED MATERIALS INC
发明人： PHAM QUYEN , GU YU PING , HUSTON JOEL , SMITH PAUL , MILLER G LAURIE , LEI LAWRENCE C , LU SIQING , CHANG YU , MARTNER CECILIA
IPC分类号： G01B7/06 , G01N27/72
摘要： A method and apparatus are provided for measuring the thickness of a test object. The apparatus includes an eddy current sensor having first and second sensor heads. The sensor heads are positioned to have a predetermined gap therebetween for passage by at least a portion of the test object through the gap. The sensor heads make measurements at given sampling locations on the test object as the test object is moved through the gap. The apparatus also includes a position sensing mechanism to determine positions of the sampling locations on the test object. The apparatus also includes an evaluation circuit in communication with the eddy current sensor and to the position sensing mechanism for determining the thickness of the test object at the sampling locations.

8. 发明公开

EP3204962A4 ATOMIC LAYER DEPOSITION CHAMBER WITH THERMAL LID 审中-公开
公开(公告)号：EP3204962A4
公开(公告)日：2018-05-16
申请号：EP15849178
申请日：2015-09-17
申请人： APPLIED MATERIALS INC
发明人： CUI ANQING , GUNGOR FARUK , WU DIEN-YEH , JANGRA VIKAS , RASHEED MUHAMMAD M , TANG WEI V , YANG YIXIONG , YUAN XIAOXIONG , BU KYOUNG-HO , GANDIKOTA SRINIVAS , CHANG YU , KUANG WILLIAM W
IPC分类号： H01L21/205 , C23C16/452 , C23C16/455
CPC分类号： C23C16/4405 , C23C16/452 , C23C16/45506 , C23C16/45536 , C23C16/45544 , C23C16/45563 , C23C16/45565 , C23C16/4558 , H01J37/32357 , H01J37/32522 , H01J37/32862
摘要： Methods and apparatus for cleaning an atomic layer deposition chamber are provided herein. In some embodiments, a chamber lid assembly includes: a housing enclosing a central channel that extends along a central axis and has an upper portion and a lower portion; a lid plate coupled to the housing and having a contoured bottom surface that extends downwardly and outwardly from a central opening coupled to the lower portion of the central channel to a peripheral portion of the lid plate; a first heating element to heat the central channel; a second heating element to heat the bottom surface of the lid plate; a remote plasma source fluidly coupled to the central channel; and an isolation collar coupled between the remote plasma source and the housing, wherein the isolation collar has an inner channel extending through the isolation collar to fluidly couple the remote plasma source and the central channel.

9. 发明申请

WO0070658A9 MULTI-ZONE RESISTIVE HEATER 审中-公开
标题翻译：多层电阻加热器
公开(公告)号：WO0070658A9
公开(公告)日：2002-07-04
申请号：PCT/US0013790
申请日：2000-05-19
申请人： APPLIED MATERIALS INC
发明人： CHEN STEVEN AIHUA , HO HENRY , YANG MICHAEL X , PEUSE BRUCE W , LITTAU KARL , CHANG YU
IPC分类号： H01L21/02 , C23C16/46 , H01L21/00 , H01L21/205 , H01L21/31 , H05B3/00 , H05B3/10
CPC分类号： H01L21/67103
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.
摘要翻译：一种加热装置，包括一个台，该平台包括具有支撑晶片和主体的区域的表面，联接到该台的轴以及第一和第二加热元件。第一加热元件设置在台的主体的第一平面内。第二加热元件设置在与第一加热元件相比距离台的表面更大距离的台的主体的第二平面内。一种反应器，包括室，电阻加热器，第一温度传感器和第二温度传感器。一种用于化学气相沉积设备的电阻加热系统，包括电阻加热器。一种控制反应器中的温度的方法，包括在反应器的室中提供电阻加热器，用至少两个温度传感器测量温度，并通过调节对第一加热元件的电力供应来控制反应器中的温度，第二加热元件根据由第一温度传感器和第二温度传感器测量的温度。

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