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1. 发明专利

JP2008205454A Selective epitaxy process control 有权
标题翻译：选择性外延过程控制
公开(公告)号：JP2008205454A
公开(公告)日：2008-09-04
申请号：JP2008019367
申请日：2008-01-30
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LAM ANDREW , KIM YIHWAN
IPC分类号： H01L21/205 , C23C16/42 , H01L21/331 , H01L29/732 , H01L29/737 , H01L29/78
CPC分类号： H01L29/7834 , C30B23/04 , C30B25/04 , C30B35/00 , H01L21/02529 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7848
摘要： PROBLEM TO BE SOLVED: To provide a method for selectively and epitaxially growing a substance containing silicon on the surface of a substrate contained in a process chamber. SOLUTION: In one or more embodiments, pressure in the process chamber is decreased when the substance is deposited on the substrate and the pressure is increased when the substance is etched off from the substrate. In the embodiments, process gas flows into the process chamber through a first zone and a second zone so that a desired ratio of a gas flow rate through the first zone to a gas flow rate through the second zone is achieved. In one or more embodiments, the first zone denotes a radially inner zone and the second zone denotes a radially outer zone wherein a ratio of inner zone gas flow rate to an outer zone gas flow rate during the deposition is smaller than that during the etching. In one or more embodiments, the selective epitaxy process includes a step of repeating, until an epitaxial layer grows to a desired thickness, a cycle composed of: the deposition, an etching process after the deposition, and a desired purge cycle. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种用于在包含在处理室中的基板的表面上选择性和外延生长含硅物质的方法。解决方案：在一个或多个实施例中，当物质沉积在衬底上时，处理室中的压力降低，并且当物质从衬底上被蚀刻掉时，压力增加。在实施例中，处理气体通过第一区域和第二区域流入处理室，从而实现通过第一区域的气体流速与通过第二区域的气体流速的期望比例。在一个或多个实施例中，第一区域表示径向内部区域，并且第二区域表示径向外部区域，其中沉积期间内部区域气体流速与外部区域气体流量的比率小于蚀刻期间的内部区域气体流速与外部区域气体流量的比率。在一个或多个实施例中，选择性外延工艺包括重复直到外延层生长到期望厚度为止的循环，该循环包括：沉积，沉积后的蚀刻工艺以及期望的清洗循环。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2008147633A Formation and treatment of epitaxial layer containing silicon and carbon 有权
标题翻译：含有硅和碳的外延层的形成和处理
公开(公告)号：JP2008147633A
公开(公告)日：2008-06-26
申请号：JP2007291240
申请日：2007-11-08
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： CHO YONAH , KIM YIHWAN
IPC分类号： H01L21/20 , H01L21/265 , H01L21/8238 , H01L27/092 , H01L29/78
CPC分类号： H01L21/046 , H01L21/268 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/7834 , H01L29/7848
摘要： PROBLEM TO BE SOLVED: To provide a method for improving the substituted carbon content, in a silicon epitaxial layer subjected to carbon doping. SOLUTION: The method for forming and treating an epitaxial layer containing silicon and carbon, for converting an interstitial carbon in the epitaxial layer into substitutional carbon relates to the formation and process of an epitaxial layer in a semiconductor device, such as metal oxide semiconductor field effect transistor (MOSFET) devices. The process of an epitaxial layer in each implementation includes laser annealing, millisecond annealing, rapid thermal annealing, spike annealing and short-time annealing by a combination thereof. One embodiment includes at least a part of amorphization of the epitaxial layer that contains silicon and carbon. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：待解决的问题：提供一种在经受碳掺杂的硅外延层中提高取代碳含量的方法。解决方案：用于将外延层中的间隙碳转化成替代碳的含有硅和碳的外延层的形成和处理方法涉及半导体器件如金属氧化物中的外延层的形成和处理半导体场效应晶体管（MOSFET）器件。每个实施例中的外延层的工艺包括激光退火，毫秒退火，快速热退火，尖峰退火和通过其组合的短时退火。一个实施方案包括含有硅和碳的外延层的非晶化的至少一部分。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2013175745A Epitaxial deposition process and apparatus 审中-公开
标题翻译：外延沉积工艺和设备
公开(公告)号：JP2013175745A
公开(公告)日：2013-09-05
申请号：JP2013076946
申请日：2013-04-02
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： ANDREW LAM , KIM YIHWAN , SATHEESH KUPPURAO , PHAN SEE-ENG , LU XINLIANG , KAO CHIEN-TEH
IPC分类号： H01L21/205 , C23C16/02 , H01L21/203 , H01L21/304 , H01L21/3065
CPC分类号： C23C16/452 , C23C16/0236 , C23C16/505 , H01L21/31116 , H01L21/67069
摘要： PROBLEM TO BE SOLVED: To provide an epitaxial deposition process which includes an epitaxial deposition process following a dry etching process.SOLUTION: A dry etching process includes the step of disposing a substrate to be cleaned in a process chamber and removing a surface oxide. A gas mixture is introduced into a plasma cavity and the gas mixture is excited to generate plasma of reactive gas in the plasma cavity. The reactive gas enters the process chamber and reacts with the substrate to form a thin film. The substrate is heated to evaporate the thin film and an epitaxy surface is exposed. The epitaxy surface does not substantially contain an oxide. Subsequently, an epitaxial layer is formed on the epitaxy surface using epitaxial deposition.
摘要翻译：要解决的问题：提供一种外延沉积工艺，其包括在干蚀刻工艺之后的外延沉积工艺。解决方案：干蚀刻工艺包括将待清洁的基板设置在处理室中并除去表面氧化物的步骤。将气体混合物引入等离子体腔中，并且激发气体混合物以在等离子体腔中产生反应气体的等离子体。反应气体进入处理室并与基板反应以形成薄膜。将衬底加热以蒸发薄膜并暴露外延表面。外延表面基本上不含氧化物。随后，使用外延沉积在外延表面上形成外延层。

4. 发明专利

JP2013070055A Formation of in-situ phosphorus-doped epitaxial layer containing silicon and carbon 有权
标题翻译：形成含有硅和碳的原位磷酸盐外延层
公开(公告)号：JP2013070055A
公开(公告)日：2013-04-18
申请号：JP2012207133
申请日：2012-09-20
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： KIM YIHWAN
IPC分类号： H01L21/205 , C23C16/42 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7848 , H01L21/02529 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/66628 , H01L29/7834
摘要： PROBLEM TO BE SOLVED: To provide a method of obtaining a selective epitaxial layer containing Si and C and having a high substitution carbon concentration at high deposition speed, while maintaining a low process temperature of about 700°C or lower, preferably.SOLUTION: The method of forming an epitaxial layer containing Si and C on a substrate includes the steps for: placing a substrate including a single crystal surface, an amorphous surface, a polycrystalline surface, and at least one second surface selected from the combination thereof in a process chamber; forming an Si:C epitaxial film doped with phosphorus in at least a part of the substrate by exposing the substrate to a silicon source, a carbon source, and a phosphorus source while maintaining the pressure in the process chamber at at least 300 Torr; and processing the substrate furthermore by exposing it to an etching gas containing HCl under a temperature in the process chamber of 700°C or lower.
摘要翻译：要解决的问题：为了提供一种获得含有Si和C并且在高沉积速度下具有高取代碳浓度的选择性外延层的方法，同时保持约700℃或更低的较低的工艺温度。解决方案：在衬底上形成含有Si和C的外延层的方法包括以下步骤：将包括单晶表面，非晶表面，多晶表面和至少一个第二表面的衬底在处理室中的组合; 在将所述处理室中的压力保持在至少300乇的同时，通过将所述衬底暴露于硅源，碳源和磷源，在所述衬底的至少一部分中形成掺杂有磷的Si：C外延膜; 并且在700℃或更低的处理室内的温度下将其暴露于含有HCl的蚀刻气体中进一步处理。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2009111368A Selective formation of silicon carbon epitaxial layer 有权
标题翻译：选择性形成硅碳外延层
公开(公告)号：JP2009111368A
公开(公告)日：2009-05-21
申请号：JP2008258743
申请日：2008-10-03
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： YE ZHIYUAN , CHOPRA SAURABH , LAM ANDREW , KIM YIHWAN
IPC分类号： H01L21/205 , C23C16/42 , H01L29/78
CPC分类号： H01L21/02529 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636 , H01L29/1054 , H01L29/7833
摘要： PROBLEM TO BE SOLVED: To provide methods for formation of epitaxial layers containing n-doped silicon.
SOLUTION: Formation of the n-doped epitaxial layer in semiconductor devices, for example, metal oxide semiconductor field effect transistor (MOSFET) devices involves exposing a substrate in a process chamber to deposition gases including a silicon source, a carbon source and an n-dopant source at a first temperature and pressure and then exposing the substrate to an etchant at a second temperature higher than that during deposition and a pressure higher than that during deposition.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供形成含有n掺杂硅的外延层的方法。解决方案：在半导体器件中形成n掺杂外延层，例如金属氧化物半导体场效应晶体管（MOSFET）器件包括将处理室中的衬底暴露于包括硅源，碳源和在第一温度和压力下的n掺杂剂源，然后在高于沉积期间的第二温度下将衬底暴露于蚀刻剂，并且压力高于沉积期间的压力。版权所有（C）2009，JPO＆INPIT

6. 发明专利

DE112007001813T5 未知
公开(公告)号：DE112007001813T5
公开(公告)日：2009-07-09
申请号：DE112007001813
申请日：2007-07-30
申请人： APPLIED MATERIALS INC
发明人： KIM YIHWAN , LAM ANDREW M
IPC分类号： H01L21/36
摘要： A first aspect of the invention provides a method of selectively forming an epitaxial layer on a substrate. The method includes heating the substrate to a temperature of less than about 800° C. and employing both silane and dichlorosilane as silicon sources during epitaxial film formation. Numerous other aspects are provided.

7. 发明专利

DE112007001814T5 未知
公开(公告)号：DE112007001814T5
公开(公告)日：2009-06-04
申请号：DE112007001814
申请日：2007-07-31
申请人： APPLIED MATERIALS INC
发明人： KIM YIHWAN , YE ZHIYUAN , ZOJAJI ALI
IPC分类号： C30B25/02
摘要： In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon-containing silicon layer prior to etching. Numerous other aspects are provided.

8. 发明专利

DE112010000968T5 Verfahren zum Ablagern von Schichten mit reduzierter Grenzflächenverschmutzung 未知
公开(公告)号：DE112010000968T5
公开(公告)日：2012-08-02
申请号：DE112010000968
申请日：2010-03-04
申请人： APPLIED MATERIALS INC
发明人： SANCHEZ ERROL , VATUS JEAN R , TANG JINSONG , KIM YIHWAN , KUPPURAO SATHEESH
IPC分类号： H01L21/20 , H01L21/205 , H01L21/324
摘要： Hierin sind Verfahren zum Ablagern von Schichten mit reduzierter Grenzflächenverschmutzung offenbart. Die erfinderischen Verfahren können die Verschmutzung an der Grenzfläche zwischen abgelagerten Schichten, beispielsweise zwischen einer abgelagerten Schicht und einem darunter liegenden Substrat oder Film, vorteilhaft reduzieren. In einigen Ausführungsformen kann ein Verfahren zum Ablagern einer Schicht das Tempern einer siliziumhaltigen Schicht (200) mit einer ersten Schicht (202), die darauf abgelagert ist, in einer reduzierenden Atmosphäre; das Entfernen der ersten Schicht unter Anwendung eines Ätzvorgangs zum Freilegen der siliziumhaltigen Schicht nach dem Tempern; und das Ablagern einer zweiten Schicht (210) auf der freigelegten siliziumhaltigen Schicht enthalten.

9. 发明专利

DE112007001523T5 未知
公开(公告)号：DE112007001523T5
公开(公告)日：2009-05-14
申请号：DE112007001523
申请日：2007-06-29
申请人： APPLIED MATERIALS INC
发明人： KIM YIHWAN , VATUS JEAN R , WASHINGTON LORI , SAMOILOV ARKADII V , ZOJAJI ALI
IPC分类号： C23C16/00
摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.

10. 发明专利

DE102008050511B4 Selektive Bildung einer Silizium-Kohlenstoff-Epitaxialschicht 未知
公开(公告)号：DE102008050511B4
公开(公告)日：2017-02-16
申请号：DE102008050511
申请日：2008-10-06
申请人： APPLIED MATERIALS INC
发明人： YE ZHIYUAN , CHOPRA SAURABH , LAM ANDREW , KIM YIHWAN
IPC分类号： H01L21/205 , H01L21/336
摘要： Es werden Verfahren zur Bildung von Epitaxialschichten, die n-dotiertes Silizium enthalten, offenbart. Konkrete Ausführungsformen betreffen die Bildung und Behandlung von Epitaxialschichten in Halbleiterbauelementen, zum Beispiel Metalloxidhalbleiter-Feldeffekttransistor(MOSFET)-Bauelementen. In konkreten Ausführungsformen beinhaltet die Bildung der n-dotierten Epitaxialschicht das Inkontaktbringen eines Substrats in einer Prozesskammer mit Abscheidungsgasen, die eine Siliziumquelle, eine Kohlenstoffquelle und eine n-Dotandenquelle enthalten, bei einer ersten Temperatur und einem ersten Druck und dann das Inkontaktbringen des Substrats mit einem Ätzmittel bei einer zweiten, höheren Temperatur und einem höheren Druck als während der Abscheidung.

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