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1. 发明申请

WO2009111344A3 METHOD AND APPARATUS FOR REMOVING POLYMER FROM A SUBSTRATE 审中-公开
标题翻译：从基板上去除聚合物的方法和装置
公开(公告)号：WO2009111344A3
公开(公告)日：2009-11-05
申请号：PCT/US2009035572
申请日：2009-02-27
申请人： APPLIED MATERIALS INC , COLLINS KENNETH , SALINAS MARTIN , MERRY WALTER , YUAN JIE , NGUYEN ANDREW , RAMASWAMY KARTIK , SUN JENNIFER , DUAN REN-GUAN , HE XIAOMING , FUNG NANCY , RUI YING , YOUSIF IMAD , HOFFMAN DANIEL J
发明人： COLLINS KENNETH , SALINAS MARTIN , MERRY WALTER , YUAN JIE , NGUYEN ANDREW , RAMASWAMY KARTIK , SUN JENNIFER , DUAN REN-GUAN , HE XIAOMING , FUNG NANCY , RUI YING , YOUSIF IMAD , HOFFMAN DANIEL J
IPC分类号： H01L21/3065 , H01L21/302
CPC分类号： H01L21/02087 , H01J37/32357 , H01J37/32366 , H01L21/0209
摘要： A method and an apparatus for removing polymer from a substrate are provided. In one embodiment, an apparatus utilized to remove polymer from a substrate includes a processing chamber having a chamber wall and a chamber lid defining a process volume, a substrate support assembly disposed in the processing chamber, and a remote plasma source coupled to the processing chamber through an outlet port formed within the chamber wall, the outlet port having an opening pointing toward an periphery region of a substrate disposed on the substrate support assembly, wherein the remote plasma source is fabricated from a material resistant to hydrogen species.
摘要翻译：提供了从基板上除去聚合物的方法和装置。在一个实施方案中，用于从基材中除去聚合物的装置包括具有室壁和限定处理体积的室盖的处理室，设置在处理室中的基板支撑组件和耦合到处理室的远程等离子体源通过形成在室壁内的出口，出口具有指向设置在基板支撑组件上的基板的周边区域的开口，其中远程等离子体源由耐氢物质的材料制成。

2. 发明专利

JP2008273823A Apparatus and method for reducing erosion rate of surface exposed to halogen-containing plasma 有权
标题翻译：降低暴露于含氢等离子体表面的腐蚀速率的装置和方法
公开(公告)号：JP2008273823A
公开(公告)日：2008-11-13
申请号：JP2008099381
申请日：2008-04-07
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SUN JENNIFER Y , DUAN REN-GUAN , YUAN JIE , XU LI , COLLINS KENNETH S
IPC分类号： C04B35/50 , C23C16/44 , H01L21/205 , H01L21/3065
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32495
摘要： PROBLEM TO BE SOLVED: To provide a ceramic article resistant to erosion by a halogen-containing plasma used in semiconductor processing.
SOLUTION: The ceramic article includes ceramic which is multi-phased, typically including at least two phases or three phases. In a first embodiment, the ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mol% to about 75 mol%; zirconium oxide at a molar concentration ranging from about 10 mol% to about 30 mol%; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mol% to about 30 mol%.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供耐半导体加工中使用的含卤素等离子体侵蚀的陶瓷制品。解决方案：陶瓷制品包括多相陶瓷，通常包括至少两相或三相。在第一实施方案中，陶瓷由摩尔浓度范围为约50mol％至约75mol％的氧化钇形成; 摩尔浓度范围为约10mol％至约30mol％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为约10mol％至约30mol％。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2012199567A Manufacturing method and apparatus for plasma reaction apparatus component 审中-公开
标题翻译：等离子体反应装置组件的制造方法和装置
公开(公告)号：JP2012199567A
公开(公告)日：2012-10-18
申请号：JP2012117572
申请日：2012-05-23
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： RYABOVA ELMIRA , LEWINGTON RICHARD , CHANDRACHOOD MADHAVI R , SABHARWAL AMITABH , BIVENS DARIN , SUN JENNIFER , YUAN JIE
IPC分类号： H01L21/3065 , C04B35/50
CPC分类号： C04B35/505 , C04B35/64 , C04B2235/662 , C04B2235/663 , H01J37/32467 , Y10T29/49002
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a yttria component.SOLUTION: A solid yttria sample is prepared at the beginning of the processing. The yttria sample is sintered by exposing the solid yttria sample to a high temperature environment, and a component is formed by machining the yttria sample. The component is heated at a predetermined heating rate to be annealed. The component is kept at a constant annealing temperature and is cooled at a predetermined cooling rate. Bulk yttria components manufactured by this method show improvements of characteristics including stress reduction and enhanced chemical resistance.
摘要翻译：要解决的问题：提供一种氧化钇组分的制造方法。
解决方案：在加工开始时制备固体氧化钇样品。通过将固体氧化钇样品暴露于高温环境来烧结氧化钇样品，并且通过机械加工氧化钇样品形成组分。将组分以预定的加热速率加热以进行退火。将组分保持在恒定的退火温度，并以预定的冷却速率冷却。通过该方法制造的散装氧化钇组分显示出包括应力减小和增强的耐化学性的特性的改进。版权所有（C）2013，JPO＆INPIT

4. 发明专利

JP2012116749A Apparatus and method for reducing erosion rate of surface exposed to halogen-containing plasma 有权
标题翻译：降低暴露于含氢等离子体表面的腐蚀速率的装置和方法
公开(公告)号：JP2012116749A
公开(公告)日：2012-06-21
申请号：JP2012001609
申请日：2012-01-06
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SUN JENNIFER Y , DUAN REN-GUAN , YUAN JIE , XU LI , COLLINS KENNETH S
IPC分类号： C04B35/50 , H01L21/3065
CPC分类号： C23C16/4404 , H01J37/32467 , H01J37/32495
摘要： PROBLEM TO BE SOLVED: To provide a ceramic article resistant to erosion by a halogen-containing plasma used in semiconductor processing.SOLUTION: The ceramic article includes ceramic which is multi-phased, typically including at least two phases or three phases. In a first embodiment, the ceramic is formed from yttrium oxide at a molar concentration ranging from about 50 mol% to about 75 mol%; zirconium oxide at a molar concentration ranging from about 10 mol% to about 30 mol%; and at least one other component, selected from the group consisting of aluminum oxide, hafnium oxide, scandium oxide, neodymium oxide, niobium oxide, samarium oxide, ytterbium oxide, erbium oxide, cerium oxide, and combinations thereof, at a molar concentration ranging from about 10 mol% to about 30 mol%.
摘要翻译：要解决的问题：提供耐半导体加工中使用的含卤素等离子体侵蚀的陶瓷制品。解决方案：陶瓷制品包括多相陶瓷，通常包括至少两相或三相。在第一实施方案中，陶瓷由摩尔浓度范围为约50mol％至约75mol％的氧化钇形成; 摩尔浓度范围为约10mol％至约30mol％的氧化锆; 和选自氧化铝，氧化铪，氧化钪，氧化钕，氧化铌，氧化钐，氧化镱，氧化铒，氧化铈及其组合中的至少一种其它组分，摩尔浓度范围为约10mol％至约30mol％。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2010141341A Method and apparatus for processing substrate, and ceramic composition for them 审中-公开
标题翻译：用于加工基材的方法和装置及其陶瓷组合物
公开(公告)号：JP2010141341A
公开(公告)日：2010-06-24
申请号：JP2009283326
申请日：2009-12-14
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： HAN NIANCI , SHIH HONG , YUAN JIE , LU DANNY , MA DIANA
IPC分类号： C04B35/50 , H01L21/3065 , B01J19/08 , C23C14/00 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/31 , H05H1/46
CPC分类号： H01J37/32467 , H01J37/321 , H01J37/32642 , Y10S156/914
摘要： PROBLEM TO BE SOLVED: To provide a ceramic composition having high corrosion resistance and never causing pollution for a dielectric window of a reactor chamber wherein a substrate is processed in plasma of a processing gas, and for a process kit; and to provide a method for processing (e.g., etching) a substrate in a chamber containing plasma of a processing gas.
SOLUTION: This ceramic composition includes a ceramic compound (e.g., Al
2 O
3 ) and an oxide of a Group 3B metal (e.g., Y
2 O
3 ). This method includes sending processing power through a dielectric window which is formed of the ceramic composition.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种陶瓷组合物，其具有高的耐腐蚀性，并且不会对处理气体的等离子体中的基板和处理套件的反应室的电介质窗口造成污染; 并且提供在包含处理气体的等离子体的室中处理（例如蚀刻）基板的方法。解决方案：该陶瓷组合物包括陶瓷化合物（例如，Al SB 3 O 3 SB 3）和3B族金属的氧化物（例如，Y 2 0 3 ）。该方法包括通过由陶瓷组合物形成的电介质窗口发送处理能力。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2008247734A Method of fabricating plasma reactor part 有权
标题翻译：制备等离子体反应器零件的方法
公开(公告)号：JP2008247734A
公开(公告)日：2008-10-16
申请号：JP2008069212
申请日：2008-03-18
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： RYABOVA ELMIRA , YUAN JIE , SUN JENNIFER
IPC分类号： C30B29/06 , C01B33/02 , C30B15/00 , C30B33/02 , H01L21/205 , H01L21/3065
CPC分类号： C30B25/00 , C30B29/06 , C30B33/02 , H01J37/32495 , H01J37/32642
摘要： PROBLEM TO BE SOLVED: To provide a method of fabricating a silicon part which has enhanced corrosion resistance and is particularly suitable for use in plasma or other reactive environments. SOLUTION: The method of fabricating the silicon part includes: (a) providing a silicon sample using a cyclic silicon growth process comprising: (a1) initiating silicon growth in a first inert gas atmosphere for a first time period; (a2) continuing silicon growth in a reducing gas atmosphere for a second time period; (a3) continuing silicon growth in a second inert gas atmosphere for a third time period; and (a4) performing (a2) and (a3) for a sufficient number of cycles until desired properties are obtained for the silicon sample; (b) machining the silicon sample to form a part; and (c) annealing the part. The annealing (c) may use an improved annealing process comprising successively exposing the part to one or more kinds of gases. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造具有增强的耐腐蚀性并且特别适用于等离子体或其它反应性环境的硅部件的方法。解决方案：制造硅部件的方法包括：（a）使用环状硅生长工艺提供硅样品，其包括：（a1）在第一惰性气体气氛中第一时间段内引发硅生长; （a2）在还原气体气氛中持续第二时间的硅生长; （a3）在第二惰性气体气氛中持续第三时间的硅生长; 和（a4）执行（a2）和（a3）足够的循环，直到获得硅样品的所需性质; （b）加工硅样品以形成部分; 和（c）退火该零件。退火（c）可以使用改进的退火工艺，包括将部件连续地暴露于一种或多种气体。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2009035469A Plasma-proof ceramics equipped with controlled electric resistivity 审中-公开
标题翻译：具有控制电阻的等离子体陶瓷
公开(公告)号：JP2009035469A
公开(公告)日：2009-02-19
申请号：JP2007251717
申请日：2007-09-27
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SUN JENNIFER Y , COLLINS KENNETH S , DUAN REN-GUAN , THACH SENH , GRAVES THOMAS , HE XIAOMING , YUAN JIE
IPC分类号： C04B35/50 , C23C14/08 , C23C16/44 , H01L21/205 , H01L21/3065
CPC分类号： C04B35/505 , C04B35/486 , C04B35/495 , C04B35/50 , C04B2235/3217 , C04B2235/3222 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/404 , C04B2235/762 , C04B2235/77 , C04B2235/80 , C04B2235/81 , Y10T428/31
摘要： PROBLEM TO BE SOLVED: To provide a specific ceramic material having corrosion/erosion resistance in semiconductor processing conditions using a corrosive/erosive plasma. SOLUTION: The corrosive plasma may be a halogen-containing plasma. The specific ceramic material reduces the capability of plasma arc discharge by providing a controlled electric resistivity through the modification of the specific ceramic material. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：在半导体加工条件下使用腐蚀性/侵蚀性等离子体提供具有耐腐蚀/耐腐蚀性的特定陶瓷材料。
解决方案：腐蚀性等离子体可以是含卤素的等离子体。特定的陶瓷材料通过改变特定的陶瓷材料提供受控的电阻率来降低等离子体电弧放电的能力。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008141181A Method of manufacturing part for plasma reaction apparatus, and apparatus 有权
标题翻译：等离子体反应装置的制造方法和装置
公开(公告)号：JP2008141181A
公开(公告)日：2008-06-19
申请号：JP2007279943
申请日：2007-10-29
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： RYABOVA ELMIRA , LEWINGTON RICHARD , CHANDRACHOOD MADHAVI R , SABHARWAL AMITABH , BIVENS DARIN , SUN JENNIFER , YUAN JIE
IPC分类号： H01L21/3065 , C04B35/50 , H05H1/46
CPC分类号： C04B35/505 , C04B35/64 , C04B2235/662 , C04B2235/663 , H01J37/32467 , Y10T29/49002
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing yttria parts. SOLUTION: In one embodiment, this method comprises sintering a yttria sample, machining a sintered sample to form a part, heating and annealing the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造氧化钇部件的方法。解决方案：在一个实施方案中，该方法包括烧结氧化钇样品，加工烧结样品以形成部件，以预定加热速率加热和退火部件，将部件保持在恒定的退火温度，并冷却部件以预定的冷却速度。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2007294987A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2007294987A
公开(公告)日：2007-11-08
申请号：JP2007159821
申请日：2007-06-18
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SUI ZHIFENG , SHAN HONGQING , JOHANSSON NILS , NOORBAKHSH HAMID , GUAN YU , FRUM CORIOLAN , YUAN JIE , HSIEH CHANG-LIN
IPC分类号： H01L21/3065 , G01N21/15 , G01N21/21 , G01N21/71 , G01N21/95 , G01N21/956 , H01J37/32 , H01L21/311 , H01L21/316
CPC分类号： G01N21/21 , G01N21/9501 , G01N21/956 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： PROBLEM TO BE SOLVED: To monitor small changes made under substrate processing. SOLUTION: The substrate processing apparatus of this invention comprises: a process chamber having a substrate support, an entrance of gas stream, a gas activation device, a gas exhaust device and wall that has a recess portion with a window; and a process monitoring system that adjoins the window of the recess portion of the wall. The foregoing process monitor system monitors a process performed in the process chamber by detecting radiation that passes through the window. COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2014159637A Method of coating semiconductor processor with yttrium-containing protective coating 有权
标题翻译：用含有保护性涂层涂覆半导体处理器的方法
公开(公告)号：JP2014159637A
公开(公告)日：2014-09-04
申请号：JP2014054887
申请日：2014-03-18
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： JENNIFER Y SUN , SENH THACH , JIM DEMPSTER , XU LI , KENNETH S COLLINS , RENGUAN DUAN , THOMAS GRAVES , HE XIAOMING , YUAN JIE
IPC分类号： C23C14/08 , C04B35/50 , C04B41/87 , H01L21/205 , H01L21/3065 , H01L21/31
CPC分类号： C23C28/042 , C23C4/11 , C23C4/18 , C23C16/4404
摘要： PROBLEM TO BE SOLVED: To provide a coating which shows erosion resistance against halogen-containing plasma and reduces possibility of plasma arc discharge on a surface of the coating.SOLUTION: A coating is formed by sputtering deposition from a sputtering target which is composed of at least three precursor oxides comprising yttrium oxide in a concentration of about 55-80 mol%, zirconium oxide in a concentration of about 5-25 mol% and at least one oxide selected from aluminum oxide, hafnium oxide, niobium, scandium oxide, neodymium oxide and samarium oxide in a concentration of about 5-25 mol%, with the total mol% of the precursor oxides equal to or lower than 100 mol%. The coating shows erosion resistance in halogen-containing plasma equal to or lower than that of pure YO.
摘要翻译：要解决的问题：提供一种对含卤素等离子体具有耐腐蚀性的涂层，并降低涂层表面上等离子体电弧放电的可能性。解决方案：通过从溅射靶溅射沉积形成涂层，该溅射靶由浓度为约55-80摩尔％的氧化钇，浓度为约5-25摩尔％的氧化锆和至少一种选自氧化铝，氧化铪，铌，氧化钪，氧化钕的氧化物的至少三种前体氧化物和氧化钐的浓度为约5-25摩尔％，前体氧化物的总mol％等于或低于100摩尔％。含有卤素的等离子体中的涂层显示出与纯YO相同或更低的耐腐蚀性。

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