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1. 发明专利

JP2008113007A Plasma etching method and equipment of photomask 有权
标题翻译：等离子体蚀刻方法和光电子设备
公开(公告)号：JP2008113007A
公开(公告)日：2008-05-15
申请号：JP2007279816
申请日：2007-10-29
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： KUMAR AJAY , CHANDRACHOOD MADHAVI R , LEWINGTON RICHARD , BIVENS DARIN , SABHARWAL AMITABH , PANAYIL SHEEBA J , OUYE ALAN HIROSHI
IPC分类号： H01L21/3065 , G03F1/08 , H01L21/027 , H05H1/46
CPC分类号： C23F4/00 , G03F1/80 , H01J37/321 , H01J37/32422
摘要： PROBLEM TO BE SOLVED: To provide a method and equipment for etching photomask.
SOLUTION: The equipment for etching photomask includes a processing chamber provided with a shield above a substrate support. The shield is provided with a plate having an opening wherein the plate has at least one characteristic of material or potential bias and the characteristic has two different zones. According to the inventive method, a photomask substrate is etched by distributing ions and neutral species passing through the shield.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供蚀刻光掩模的方法和设备。解决方案：用于蚀刻光掩模的设备包括在基板支撑件上方设置有屏蔽的处理室。屏蔽设置有具有开口的板，其中板具有材料或电位偏压的至少一种特性，并且该特性具有两个不同的区域。根据本发明的方法，通过分布通过屏蔽的离子和中性物质来蚀刻光掩模衬底。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2006194878A Integrative measuring chamber for transparent substrate 有权
标题翻译：透明基板一体化测量室
公开(公告)号：JP2006194878A
公开(公告)日：2006-07-27
申请号：JP2006002870
申请日：2006-01-10
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LEWINGTON RICHARD , COLLARD COREY , ANDERSON SCOTT , NGUYEN KHIEM
IPC分类号： G01B11/22 , G03F1/08 , H01L21/027
CPC分类号： G03F1/30 , H01L21/31116 , H01L21/67742
摘要： PROBLEM TO BE SOLVED: To provide a method and an apparatus for measurement of an etching depth between photo-mask etching by alternative phase shifting in the semiconductor photo-mask processing system.
SOLUTION: The measuring apparatus for measuring the depth of etching in the etching process system is provided with a measuring cell connected with a main frame of the etching process system, an etching depth measuring device fixed on the bottom of the measuring cell, and an opening provided on the bottom of the measuring cell by which a light beam is made to be able to pass through between the etching depth measuring device and the substrate. The embodiment of this invention with regard to the method for preparing the alternative phase shifting mask is that the quarts substrate is etched partially to the initial etching depth while measuring the etched depth by integrative measuring device, then the etching and the measurement are repeated till the etching depth of the substrate arrives at the objective depth.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于通过半导体光掩模处理系统中的替代相移来测量光掩模蚀刻之间的蚀刻深度的方法和装置。解决方案：用于测量蚀刻处理系统中的蚀刻深度的测量装置设置有与蚀刻处理系统的主框架连接的测量单元，固定在测量单元底部的蚀刻深度测量装置，以及设置在测量单元的底部上的开口，通过该开口使光束能够在蚀刻深度测量装置和基板之间通过。本发明的制备替代相移掩模的方法的实施方案是在通过综合测量装置测量蚀刻深度的同时，将夸脱基底部分蚀刻至初始蚀刻深度，然后重复蚀刻和测量，直到衬底的蚀刻深度达到客观深度。版权所有（C）2006，JPO＆NCIPI

3. 发明专利

JP2008112964A Mask etching plasma reactor with variable process gas distribution 有权
标题翻译：具有可变过程气体分布的掩模等离子体反应器
公开(公告)号：JP2008112964A
公开(公告)日：2008-05-15
申请号：JP2007188227
申请日：2007-07-19
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： CHANDRACHOOD MADHAVI R , GRIMBERGEN MICHAEL N , NGUYEN KHIEM K , LEWINGTON RICHARD , IBRAHIM IBRAHIM M , PANAYIL SHEEBA J , KUMAR AJAY
IPC分类号： H01L21/3065 , B01J19/08 , G03F1/08 , H05H1/46
CPC分类号： H01J37/32082 , H01J37/321 , H01J37/3244 , H01J37/32449
摘要： PROBLEM TO BE SOLVED: To provide a plasma reactor capable of actualizing extremely uniform distribution of etching speeds over the surface of a mask. SOLUTION: The plasma reactor includes a vacuum chamber having a cylindrical side wall, a ceiling overlaying the side wall and a ring supported on a top edge of the side wall, supporting the ceiling and comprising an external surface and an internal surface. A plurality of passages extend in a radial direction through the ring from the external surface to the internal surface and are spaced apart along a circumference of the ring. An external gas flow conduit apparatus outside of the chamber extends around a circumference of the chamber and is coupled to a process gas supply source. A plurality of gas flow valves outside of the chamber are coupled to the external conduit at respective locations spaced apart along the conduit, and each of the values has a controlled gas output port (a) coupled to each of the plurality of passages at the external surface of the ring and a valve control input (b). A gas valve configuration controller controls the valve control input of each of the valves. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供能够实现掩模表面上的蚀刻速度分布非常均匀的等离子体反应器。解决方案：等离子体反应器包括具有圆柱形侧壁的真空室，覆盖侧壁的天花板和支撑在侧壁的顶部边缘上的环，支撑天花板并且包括外表面和内表面。多个通道沿径向延伸穿过环从外表面到内表面并且沿环的圆周间隔开。在室外部的外部气体流动管道装置围绕室的圆周延伸并连接到工艺气体供应源。在室外部的多个气体流量阀沿着管道在相应位置处联接到外部管道，并且每个值具有受控的气体输出端口（a），其在外部的多个通道中的每一个环的表面和阀门控制输入（b）。气阀配置控制器控制每个阀的阀门控制输入。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008112139A Mask etch plasma reactor with backside optical sensor and multiple frequency control of etch distribution 有权
标题翻译：具有背光光学传感器的掩模等离子体反应器和多个频率控制的ETCH分布
公开(公告)号：JP2008112139A
公开(公告)日：2008-05-15
申请号：JP2007187993
申请日：2007-07-19
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LEWINGTON RICHARD , PATERSON ALEXANDER M , GRIMBERGEN MICHAEL N , KUMAR AJAY
IPC分类号： G03F1/08 , H01L21/027 , H05H1/46
CPC分类号： H01J37/32935 , H01J37/32091 , H01J37/321 , H01J37/32165 , H01J37/3299
摘要： PROBLEM TO BE SOLVED: To provide a plasma reactor having multiple frequency control of etch parameters. SOLUTION: The reactor includes a reactor chamber 1104 and a workpiece support 1103 within the chamber, the chamber having a ceiling 1108 facing the workpiece support, and an inductively coupled source power applicator 1114 and a capacitively coupled plasma source power applicator 1116. An array of optical fibers extends through the support surface of the workpiece support to view the workpiece through its bottom surface. Optical sensors are coupled to the output ends of the optical fibers. The reactor further includes a controller, responsive to the optical sensors for adjusting the relative amounts of power simultaneously coupled to plasma in the chamber by the inductively coupled plasma source power applicator 1114 and the capacitively coupled plasma source power applicator 1116. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供具有蚀刻参数的多次频率控制的等离子体反应器。反应器包括反应室1104和室内的工件支撑件1103，该室具有面向工件支撑件的天花板1108以及感应耦合的源功率施加器1114和电容耦合的等离子体源功率施加器1116。光纤阵列延伸穿过工件支撑件的支撑表面，以通过其底部表面观察工件。光学传感器耦合到光纤的输出端。反应器还包括响应于光学传感器的控制器，用于通过电感耦合等离子体源功率施加器1114和电容耦合的等离子体源功率施加器1116调节同时耦合到腔室中的等离子体的功率的相对量。（C）2008，JPO＆INPIT

5. 发明专利

JP2012199567A Manufacturing method and apparatus for plasma reaction apparatus component 审中-公开
标题翻译：等离子体反应装置组件的制造方法和装置
公开(公告)号：JP2012199567A
公开(公告)日：2012-10-18
申请号：JP2012117572
申请日：2012-05-23
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： RYABOVA ELMIRA , LEWINGTON RICHARD , CHANDRACHOOD MADHAVI R , SABHARWAL AMITABH , BIVENS DARIN , SUN JENNIFER , YUAN JIE
IPC分类号： H01L21/3065 , C04B35/50
CPC分类号： C04B35/505 , C04B35/64 , C04B2235/662 , C04B2235/663 , H01J37/32467 , Y10T29/49002
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a yttria component.SOLUTION: A solid yttria sample is prepared at the beginning of the processing. The yttria sample is sintered by exposing the solid yttria sample to a high temperature environment, and a component is formed by machining the yttria sample. The component is heated at a predetermined heating rate to be annealed. The component is kept at a constant annealing temperature and is cooled at a predetermined cooling rate. Bulk yttria components manufactured by this method show improvements of characteristics including stress reduction and enhanced chemical resistance.
摘要翻译：要解决的问题：提供一种氧化钇组分的制造方法。
解决方案：在加工开始时制备固体氧化钇样品。通过将固体氧化钇样品暴露于高温环境来烧结氧化钇样品，并且通过机械加工氧化钇样品形成组分。将组分以预定的加热速率加热以进行退火。将组分保持在恒定的退火温度，并以预定的冷却速率冷却。通过该方法制造的散装氧化钇组分显示出包括应力减小和增强的耐化学性的特性的改进。版权所有（C）2013，JPO＆INPIT

6. 发明专利

JP2008112965A Mask etching plasma reactor with cathode of uniform etching rate distribution 审中-公开
标题翻译：具有均匀蚀刻速率分布阴影的掩模等离子体反应器
公开(公告)号：JP2008112965A
公开(公告)日：2008-05-15
申请号：JP2007188633
申请日：2007-07-19
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LEWINGTON RICHARD , GRIMBERGEN MICHAEL N , NGUYEN KHIEM K , BIVENS DARIN , CHANDRACHOOD MADHAVI R , KUMAR AJAY
IPC分类号： H01L21/3065 , G03F1/08 , H01L21/027
CPC分类号： H01L21/67069 , H01J37/3255 , H01L21/67253 , H01L21/68742 , H01L21/68757 , H01L21/68785
摘要： PROBLEM TO BE SOLVED: To provide a plasma reactor for etching a work such as a rectangular or square mask.
SOLUTION: The plasma reactor comprises a vacuum chamber having a ceiling and a sidewall, and a work supporting base including a cathode having a surface for supporting a work in the chamber wherein the surface includes a plurality of individual regions formed of individual materials of different electrical characteristics. The regions can be arranged concentrically to the axis of symmetry of the wafer supporting base.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供用于蚀刻诸如矩形或正方形掩模的工件的等离子体反应器。解决方案：等离子体反应器包括具有天花板和侧壁的真空室，以及包括阴极的工件支撑底座，该阴极具有用于在腔室中支撑工件的表面，其中表面包括由单独材料形成的多个单独区域具有不同的电气特性。这些区域可以与晶片支撑基座的对称轴同心地布置。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2008147645A Method and apparatus in which metrology process and etching process are integrated 审中-公开
标题翻译：方法和设备在计量过程和蚀刻过程中的整合
公开(公告)号：JP2008147645A
公开(公告)日：2008-06-26
申请号：JP2007298320
申请日：2007-11-16
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： NGUYEN KHIEM K , LEWINGTON RICHARD
IPC分类号： H01L21/3065
CPC分类号： H01L21/68707 , G03F1/80 , H01J37/32743 , H01L21/31116 , H01L21/6719 , H01L21/67207 , H01L21/67265 , H01L21/67742
摘要： PROBLEM TO BE SOLVED: To provide an apparatus in which metrology process and etching process are integrated.
SOLUTION: The apparatus includes a multi-chamber system 100 having: a transfer chamber 105; etching chambers; a metrology chamber 110; and a robot 140 which is so constituted that it transfers a substrate between the etching chambers and the metrology chamber. A method of processing a substrate and of carrying out the metrology measurement by using this apparatus is also disclosed.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种其中集成了测量过程和蚀刻工艺的设备。解决方案：该装置包括多室系统100，其具有：传送室105; 蚀刻室; 计量室110; 以及机械手140，其被构造成使得其在蚀刻室和测量室之间传送基板。还公开了一种处理基板并通过使用该装置进行测量测量的方法。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2008141181A Method of manufacturing part for plasma reaction apparatus, and apparatus 有权
标题翻译：等离子体反应装置的制造方法和装置
公开(公告)号：JP2008141181A
公开(公告)日：2008-06-19
申请号：JP2007279943
申请日：2007-10-29
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： RYABOVA ELMIRA , LEWINGTON RICHARD , CHANDRACHOOD MADHAVI R , SABHARWAL AMITABH , BIVENS DARIN , SUN JENNIFER , YUAN JIE
IPC分类号： H01L21/3065 , C04B35/50 , H05H1/46
CPC分类号： C04B35/505 , C04B35/64 , C04B2235/662 , C04B2235/663 , H01J37/32467 , Y10T29/49002
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing yttria parts. SOLUTION: In one embodiment, this method comprises sintering a yttria sample, machining a sintered sample to form a part, heating and annealing the part at a predetermined heating rate, maintaining the part at a constant annealing temperature, and cooling the part at a predetermined cooling rate. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造氧化钇部件的方法。解决方案：在一个实施方案中，该方法包括烧结氧化钇样品，加工烧结样品以形成部件，以预定加热速率加热和退火部件，将部件保持在恒定的退火温度，并冷却部件以预定的冷却速度。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2008113008A Plasma etching method and equipment of photomask 有权
标题翻译：等离子体蚀刻方法和光电子设备
公开(公告)号：JP2008113008A
公开(公告)日：2008-05-15
申请号：JP2007279819
申请日：2007-10-29
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： KUMAR AJAY , CHANDRACHOOD MADHAVI R , LEWINGTON RICHARD , BIVENS DARIN , SABHARWAL AMITABH , PANAYIL SHEEBA J , OUYE ALAN HIROSHI
IPC分类号： H01L21/3065 , G03F1/08 , H05H1/46
CPC分类号： H01J37/32422 , H01J37/3244 , H01J37/32449
摘要： PROBLEM TO BE SOLVED: To provide a method and equipment for etching a photomask.
SOLUTION: The equipment for etching a photomask includes a processing chamber having a supporting base seat adapted to receive a photomask. An ion/neutral species shield is arranged above the base seat and a deflector assembly is installed above the ion/neutral species shield. The deflector assembly regulates the flow direction of processing gas flowing toward the ion/neutral species shield. On the other hand, a desired distribution of ions and neutral species in plasma is established using the ion/neutral species shield in order to etch the photomask.
COPYRIGHT: (C)2008,JPO&INPIT

10. 发明专利

JP2008112963A Rotating device of workpiece for plasma reactor system 有权
标题翻译：等离子体反应器系统工作旋转装置
公开(公告)号：JP2008112963A
公开(公告)日：2008-05-15
申请号：JP2007185461
申请日：2007-07-17
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： LEWINGTON RICHARD , NGUYEN KHIEM K , KUMAR AJAY , IBRAHIM IBRAHIM M , CHANDRACHOOD MADHAVI R , ANDERSON SCOTT A
IPC分类号： H01L21/677 , G03F1/08
CPC分类号： H01L21/67766 , H01L21/67069
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing system for processing a planar workpiece having a capability to alter the rotational position of the workpiece for the plasma processing chamber of the system. SOLUTION: A workpiece carrier in the system is coupled with a reactor chamber in the system. The workpiece carrier can carry a workpiece between the chambers. The system further comprises a factory interface coupled with the workpiece carrier and carrying the workpiece to/from a factory environment on the outside of the plasma processing system. The factory interface comprises (a) a frame for specifying the internal capacity, (b) an arm supported on the frame in the internal capacity to rotate and translate freely, (c) a workpiece handling blade fixed to the outside end of the arm, and (d) a supporting bracket for holding a stationary workpiece to facilitate rotation of the workpiece. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于处理具有改变系统的等离子体处理室的工件的旋转位置的能力的平面工件的等离子体处理系统。
解决方案：系统中的工件载体与系统中的反应器室耦合。工件托架可以在两个腔室之间承载工件。该系统还包括与工件载体联接的工厂接口，并将工件运送到等离子体处理系统外部的工厂环境。工厂接口包括（a）用于指定内部容量的框架，（b）支撑在框架上的臂以能够自由旋转和平移的内部能力;（c）固定到臂的外端的工件处理刀片，和（d）用于保持固定工件以便于工件旋转的支撑托架。版权所有（C）2008，JPO＆INPIT

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