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1. 发明专利

JP2007294987A Substrate processing apparatus and substrate processing method 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2007294987A
公开(公告)日：2007-11-08
申请号：JP2007159821
申请日：2007-06-18
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SUI ZHIFENG , SHAN HONGQING , JOHANSSON NILS , NOORBAKHSH HAMID , GUAN YU , FRUM CORIOLAN , YUAN JIE , HSIEH CHANG-LIN
IPC分类号： H01L21/3065 , G01N21/15 , G01N21/21 , G01N21/71 , G01N21/95 , G01N21/956 , H01J37/32 , H01L21/311 , H01L21/316
CPC分类号： G01N21/21 , G01N21/9501 , G01N21/956 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： PROBLEM TO BE SOLVED: To monitor small changes made under substrate processing. SOLUTION: The substrate processing apparatus of this invention comprises: a process chamber having a substrate support, an entrance of gas stream, a gas activation device, a gas exhaust device and wall that has a recess portion with a window; and a process monitoring system that adjoins the window of the recess portion of the wall. The foregoing process monitor system monitors a process performed in the process chamber by detecting radiation that passes through the window. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：监测在基板处理下的小变化。解决方案：本发明的基板处理装置包括：处理室，具有基板支撑件，气流入口，气体启动装置，排气装置和具有带有窗口的凹部的壁; 以及与壁的凹部的窗口相邻的过程监控系统。上述过程监视系统通过检测通过窗口的辐射来监视在处理室中执行的处理。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007329485A Apparatus and method for processing substrate 有权
标题翻译：装置和处理基板的方法
公开(公告)号：JP2007329485A
公开(公告)日：2007-12-20
申请号：JP2007159820
申请日：2007-06-18
申请人： Applied Materials Inc , アプライドマテリアルズインコーポレイテッドApplied Materials,Incorporated
发明人： SUI ZHIFENG , SHAN HONGQING , JOHANSSON NILS , NOORBAKHSH HAMID , GUAN YU , FRUM CORIOLAN , YUAN JIE , HSIEH CHANG-LIN
IPC分类号： H01L21/3065 , G01N21/15 , G01N21/21 , G01N21/71 , G01N21/95 , G01N21/956 , H01J37/32 , H01L21/311 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/522
CPC分类号： G01N21/21 , G01N21/9501 , G01N21/956 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： PROBLEM TO BE SOLVED: To monitor small changes caused during processing substrates. SOLUTION: An apparatus of processing a substrate of the present invention has: a chamber processing the substrate; a radiation source providing a radiation; a radiation polarizer adapted to polarize the radiation to one or more polarization angles selected to the orientation of a feature processed on the substrate; a radiation detector detecting the radiation reflected from the substrate during processing to generate signals; and a band pass filter for filtering the signal to selectively pass the signal component generated from the radiation reflected by the feature. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：监测处理基板过程中产生的小变化。解决方案：本发明的基板的处理装置具有：处理基板的室; 提供辐射的辐射源; 辐射偏振器，其适于将辐射偏振到针对在衬底上处理的特征的取向选择的一个或多个偏振角; 辐射检测器，在处理过程中检测从衬底反射的辐射，以产生信号; 以及带通滤波器，用于对信号进行滤波以选择性地传递由由特征反射的辐射产生的信号分量。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2001110789A INTEGRATED LOW-K DIELECTRIC AND ETCHING STOP LAYER 失效
公开(公告)号：JP2001110789A
公开(公告)日：2001-04-20
申请号：JP2000173807
申请日：2000-06-09
申请人： APPLIED MATERIALS INC
发明人： BJORKMAN CLAES H , MIN YU MELISSA , SHAN HONGQING , CHEUNG DAVID W , YAU WAI-FAN , CHOPRA NASREEN GAZALA , YIN GERALD ZHEYAO , MOGHADAM FARHAD , HUANG JUDY H , YOST DENNIS J , TANG SUM-YEE BETTY , KIM YUNSANG , LIU KUO-WEI
IPC分类号： H01L21/302 , A01C15/02 , A01C17/00 , C23C16/40 , H01L21/3065 , H01L21/31 , H01L21/311 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522
摘要： PROBLEM TO BE SOLVED: To provide a method for depositing and etching a dielectric layer, where a dielectric constant is low and etching speed changes 3:1, for forming horizontal mutual interconnects. SOLUTION: Quantity of carbon or hydrogen in a dielectric layer fluctuates due to the change in deposition condition for installing an etching stop layer or a low k dielectric in the application of damascene, which can be substituted for the former dielectric layer. Dual-damascene structure having a dielectric layer whose dielectric constant is not less than '2', which is lower than about 4, can execute deposition in the single reactor and is etched so that vertical or horizontal interconnects by making the concentration of carbon; oxygen gas such as carbon monoxide fluctuate. Etching gas for forming the vertical mutual interconnections comprises CO and a fluorocarbon, and CO gas is preferably removed from etching gas for forming the horizontal interconnects.

4. 发明专利

DE10084398T1 未知
公开(公告)号：DE10084398T1
公开(公告)日：2002-03-14
申请号：DE10084398
申请日：2000-03-13
申请人： APPLIED MATERIALS INC
发明人： HUNG HOIMAN RAYMOND , CAULFIELD JOSEPH , SHAN HONGQING , COLLINS KENNETH S , CUI CHUNSHI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/311
摘要： A plasma etching process, particularly useful for selectively etching oxide over a feature having a non-oxide composition, such as silicon nitride and especially when that feature has a corner that is prone to faceting during the oxide etch. A primary fluorine-containing gas, preferably hexafluorobutadiene (C4F6), is combined with a significantly larger amount of the diluent gas xenon (Xe) to enhance nitride selectivity without the occurrence of etch stop. The chemistry is also useful for etching oxides in a time oxide etch in which holes and corners have already been formed, for example counterbore vias in a dual damascene structure. In this case, the relative amount of xenon need not be so high, but xenon still reduces faceting of the oxide corners. The invention may be used with related heavy fluorocarbons and other fluorine-based etching gases. The plasma etching preferably includes striking the plasma with argon, switching to xenon and the fluorine-based gas but at reduced bias power to stabilize the plasma, and then increasing the bias to a full etching level.

5. 发明申请

WO0237541A2 DIELECTRIC ETCH CHAMBER WITH EXPANDED PROCESS WINDOW 审中-公开
标题翻译：具有扩展工艺窗口的电介质隔离室
公开(公告)号：WO0237541A2
公开(公告)日：2002-05-10
申请号：PCT/US0146012
申请日：2001-11-01
申请人： APPLIED MATERIALS INC
发明人： CARDUCCI JAMES D , NOORBAKHSH HAMID , LEE EVANS Y , PU BRYAN Y , SHAN HONGQING , BJORKMAN CLAES , SALIMIAN SIAMAK , LUSCHER PAUL E , WELCH MICHAEL D , LIU JINGBAO , KOMATSU TAKEHIKO , DOAN KENNY L , CHANG MELODY , WANG ZHUXU , KIM YUNSANG , WANG RUIPING
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/00 , H01L21/311 , H01L21/60 , H01L21/683 , H01L21/687 , H01L21/768
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.
摘要翻译：具有扩展处理窗口的热控等离子体蚀刻室具有热控腔室衬垫，热分解气体入口，高排气能力，磁约束和粘附改善表面纹理。根据一个或多个表面纹理处理来调节室的内壁表面，以改善其上的副产物粘附。扩展的流动能力使得住宿时间短。通过至少部分地形成在腔室衬套中的一个或多个流体通道的流体可以包括第一衬垫，第二衬垫或第一衬垫和第二衬套。具有小的热质量并与温度受控衬管或衬垫热分解的多个气体喷嘴或微型分配板将工艺气体引入处理室。等离子体约束系统防止等离子体和产物排出泵送通道或排气系统部件。基板支撑件包括静电卡盘，双区域背面冷却和坚固的电极。支撑件包括具有预定电阻率的陶瓷基板支撑件，具有流体通道的支撑板和中间的导热层，其可包括压敏敏感的丙烯酸粘合剂和金属或金属合金。

6. 发明申请

WO0235586A3 MONITORING SUBSTRATE PROCESSING USING REFLECTED RADIATION 审中-公开
标题翻译：使用反射辐射监测基板处理
公开(公告)号：WO0235586A3
公开(公告)日：2003-08-07
申请号：PCT/US0149437
申请日：2001-10-23
申请人： APPLIED MATERIALS INC
发明人： SUI ZHIFENG , SHAN HONGQING , JOHANSSON NILS , NOORBAKHSH HAMID , GUAN YU , FRUM CORIOLAN , YUAN JIE , HSIEH CHANG-LIN
IPC分类号： H01L21/3065 , G01N21/15 , G01N21/21 , G01N21/71 , G01N21/95 , G01N21/956 , H01J37/32 , H01L21/311 , H01L21/316 , H01L21/66 , G01B11/06
CPC分类号： G01N21/21 , G01N21/9501 , G01N21/956 , H01J37/32935 , H01L21/31116 , H01L21/31633
摘要： A substrate processing apparatus has a chamber capable of processing a substrate, a radiation source to provide a radiation, a radiation polarizer adapted to polarize the radiation to one or more polarization angles that are selected in relation to an orientation of a feature being processed on the substrate, a radiation detector to detect radiation reflected from the substrate during processing and generate a signal, and a controller to process the signal.
摘要翻译：衬底处理设备具有能够处理衬底的腔室，用于提供辐射的辐射源，适用于将辐射偏振到一个或多个相对于正被处理的特征的取向选择的一个或多个偏振角的辐射偏振器衬底，用于在处理期间检测从衬底反射的辐射并产生信号的辐射检测器，以及用于处理该信号的控制器。

7. 发明申请

WO0168939A3 MAGNETICALLY ENHANCED PLASMA ETCH PROCESS USING A HEAVY FLUOROCARBON ETCHING GAS 审中-公开
标题翻译：使用重型荧光粉蚀气体进行磁性增强等离子体蚀刻工艺
公开(公告)号：WO0168939A3
公开(公告)日：2002-05-30
申请号：PCT/US0140277
申请日：2001-03-09
申请人： APPLIED MATERIALS INC
发明人： LIU JINGBAO , KOMATSU TAKEHIKO , SHAN HONGQING , HORIOKA KEIJI , PU BRYAN Y
IPC分类号： H01L21/3065 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/76802
摘要： An oxide etch process practiced in magnetically enhanced reactive ion etch (MERIE) plasma reactor. The etching gas includes approximately equal amounts of a hydrogen-free fluorocarbon, most preferably C4F6, and oxygen and a much larger amount of argon diluent gas. The magnetic field is preferably maintained above about 50 gauss and the pressure at 40 milliTorr or above with chamber residence times of less than 70 milliseconds. A two-step process may be used for etching holes with very high aspect ratios. In the second step, the magnetic filed and the oxygen flow are reduced. Other flurocarbons may be substituted which have F/C ratios of less than 2 and more preferably no more than 1.6 or 1.5.
摘要翻译：在磁增强反应离子蚀刻（MERIE）等离子体反应器中实施的氧化物蚀刻工艺。蚀刻气体包括大致相等量的无氢碳氟化合物，最优选C 4 F 6，以及氧气和更大量的氩稀释气体。磁场优选保持在大约50高斯以上，压力在40毫托或更高，室停留时间小于70毫秒。可以使用两步法来蚀刻具有非常高的纵横比的孔。在第二步中，磁场和氧气流减少。 F / C比小于2，更优选不超过1.6或1.5的其它氟代烃可以被取代。

8. 发明申请

WO0182328A2 MAGNETIC BARRIER FOR PLASMA IN CHAMBER EXHAUST 审中-公开
标题翻译：用于室内等离子体的磁阻挡器
公开(公告)号：WO0182328A2
公开(公告)日：2001-11-01
申请号：PCT/US0113576
申请日：2001-04-25
申请人： APPLIED MATERIALS INC
发明人： CARDUCCI JAMES D , NOORBAKHSH HAMID , LEE EVANS Y , SHAN HONGQING , SALIMIAN SIAMAK , LUSCHER PAUL E , WELCH MICHAEL D
IPC分类号： H05H1/46 , C23C16/44 , C23C16/50 , H01J37/32 , H01L21/205 , H01L21/3065 , H01J37/00
CPC分类号： H01J37/32834 , C23C16/4412 , H01J37/32623 , H01J37/3266
摘要： A plasma chamber apparatus and method employing a magnet system to block the plasma within the chamber interior from reaching the exhaust pump. An exhaust channel between the chamber interior and the pump includes a magnet and at least one deflector that creates turbulence in the flow of exhaust gases. The magnetic field and the turbulence produced by the deflector both increase the rate of recombination of charged particles in the gases, thereby reducing the concentration of charged particles sufficiently to quench the plasma downstream of the magnet and deflector, thereby preventing the plama body withinthe chamber from reaching the exhaust pump. The plasma confinement effect of the magnetic field permits the use of a wider and/or less sinuous exhaust channel than would be required to block the plasma without the magnetic field. Therefore, the pressure drop across the exhaust channel can be reduced in comparison with prior art designas that rely entirely on the sinuousness of the exhaust channel to block the plasma. Alternatively, if the magnetic field is strong enough, the magnetic field alone can block the plasma from reaching the exhaust pump withoug the need for any deflector in the exhaust channel.
摘要翻译：一种等离子体室装置和方法，其采用磁体系统阻挡室内的等离子体到达排气泵。腔室内部和泵之间的排气通道包括磁体和至少一个在排气流中产生湍流的偏转器。由偏转器产生的磁场和湍流都增加了气体中带电粒子的复合速率，从而使带电粒子的浓度充分降低，从而使得磁体和导流板的下游猝灭等离子体，从而防止了腔室内的ama体到达排气泵。磁场的等离子体约束效应允许使用比没有磁场阻挡等离子体所需要的更宽和/或更少的弯曲的排气通道。因此，与完全依赖于排气通道的弯曲度以阻挡等离子体的现有技术设计相比，可以减小排气通道两侧的压降。或者，如果磁场足够强，则只有磁场可以阻止等离子体到达排气泵，而不需要排气通道中的任何偏转器。

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