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1. 发明申请

WO2007019467A8 SEMICONDUCTOR SUBSTRATE PROCESS USING A LOW TEMPERATURE-DEPOSITED CARBON-CONTAINING HARD MASK 审中-公开
公开(公告)号：WO2007019467A8
公开(公告)日：2007-03-29
申请号：PCT/US2006030792
申请日：2006-08-07
申请人： APPLIED MATERIALS INC
发明人： RAMASWAMY KARTIK , HANAWA HIROJI , GALLO BIAGIO , COLLINS KENNETH S , MA KAI , PARIHAR VIJAY , JENNINGS DEAN , MAYUR ABHILASH J , AL-BAYATI AMIR , NGUYEN ANDREW
CPC分类号： H01L21/0276 , C23C16/26 , C23C16/507 , H01J37/321 , H01L21/0332 , H01L21/0337 , H01L21/268 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/32139 , Y10S430/151
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.

2. 发明申请

WO2008027196A2 DYNAMIC SURFACE ANNEALING OF IMPLANTED DOPANTS WITH LOW TEMPERATURE HDPCVD PROCESS FOR DEPOSITING A HIGH EXTINCTION COEFFICIENT OPTICAL ABSORBER LAYER 审中-公开
标题翻译：具有低温HDPCVD工艺的嵌入式掺杂剂的动态表面退火以沉积高抛光系数光学吸收层
公开(公告)号：WO2008027196A2
公开(公告)日：2008-03-06
申请号：PCT/US2007018109
申请日：2007-08-14
申请人： APPLIED MATERIALS INC
发明人： PARIHAR VIJAY , BENCHER CHRISTOPHER DENNIS , KANURI RAJESH , MENEZES MARLON
IPC分类号： H01L21/04
CPC分类号： C23C16/26 , C23C14/5813 , C23C16/56 , H01L21/26513 , H01L21/268
摘要： A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber and furnishing a hydro-carbon process gas into the chamber, preferably propylene (C3H6) or toluene (C7H8) or acetylene (C2H2) or a mixture of acetylene and methane (C2H4). The process further includes inductively coupling RF plasma source power into the chamber while and applying RF plasma bias power to the wafer. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired stress (compressive or tensile). We have discovered that at a wafer temperature less than or equal to 475 degrees C, total RF plasma source power of 4000 Watts at about 2 MHz, RF plasma bias power of 2000- 3000 Watts at about 13.56 MHz and a chamber pressure in a range of 3 mTorr to 2 Torr, the deposited amorphous carbon layer has a surprising combination of high absorption and high strength and excellent step coverage.
摘要翻译：等离子体增强的物理气相沉积工艺在离子注入晶片上沉积无定形碳层，用于具有激光波长的强线束的晶片的动态表面退火。沉积过程在低于掺杂剂聚集阈值温度的晶片温度下进行，并且包括将晶片引入室中并将氢碳工艺气体提供到室中，优选丙烯（C 3 H 6）或甲苯（C 7 H 8）或乙炔（ C2H2）或乙炔和甲烷（C2H4）的混合物。该方法还包括将RF等离子体源功率感应耦合到腔室中，同时将RF等离子体偏置功率施加到晶片。将晶片偏置电压设定为沉积的无定形碳层具有期望的应力（压缩或拉伸）的水平。我们已经发现，在小于或等于475摄氏度的晶圆温度下，在约2MHz的RF功率为4000瓦的RF等离子体源功率，在约13.56MHz处的RF等离子体等离子体功率为2000-3000瓦，腔室压力为一定范围 3mTorr至2Torr，沉积的非晶碳层具有高吸收和高强度以及优异的台阶覆盖度的惊人组合。

3. 发明申请

WO2007019467A2 SEMICONDUCTOR SUBSTRATE PROCESS USING A LOW TEMPERATURE-DEPOSITED CARBON-CONTAINING HARD MASK 审中-公开
标题翻译：使用低温沉积含碳硬掩模的半导体衬底工艺
公开(公告)号：WO2007019467A2
公开(公告)日：2007-02-15
申请号：PCT/US2006030792
申请日：2006-08-07
申请人： APPLIED MATERIALS INC
发明人： RAMASWAMY KARTIK , HANAWA HIROJI , GALLO BIAGIO , COLLINS KENNETH S , MA KAI , PARIHAR VIJAY , JENNINGS DEAN , MAYUR ABHILASH J , AL-BAYATI AMIR , NGUYEN ANDREW
CPC分类号： H01L21/0276 , C23C16/26 , C23C16/507 , H01J37/321 , H01L21/0332 , H01L21/0337 , H01L21/268 , H01L21/3081 , H01L21/3086 , H01L21/31144 , H01L21/32139 , Y10S430/151
摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern, and depositing a carbon-containing hard mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes photolithographically defining the predetermined pattern in the carbon-containing hard mask layer, and etching the target layer in the presence of the hard mask layer.
摘要翻译：一种使用光学可写入掩模在半导体衬底上处理薄膜结构的方法包括：将衬底放置在反应室中，衬底在其表面上具有待按照预定图案蚀刻的目标层，并且沉积碳 - 通过（a）将含碳工艺气体引入室中，（b）在凹进路径中产生可重入的环形RF等离子体电流，所述凹进路径包括通过耦合等离子体RF源功率而覆盖工件的工艺区到所述凹入路径的外部，以及（c）将RF等离子体偏置功率或偏置电压耦合到所述工件。该方法还包括在含碳硬掩模层中光刻限定预定图案，并且在存在硬掩模层的情况下蚀刻目标层。

4. 发明公开

EP1872397A4 DUAL WAVELENGTH THERMAL FLUX LASER ANNEAL 有权
标题翻译：双波长热流激光加热
公开(公告)号：EP1872397A4
公开(公告)日：2009-05-06
申请号：EP06749072
申请日：2006-03-30
申请人： APPLIED MATERIALS INC
发明人： JENNINGS DEAN , LANG HAIFAN , YAM MARK , PARIHAR VIJAY , MAYUR ABHILASH , HUNTERN AARON , ADAMS BRUCE , RANISH JOSEPH MICHAEL
IPC分类号： H01L21/428 , B23K26/00 , B23K26/06 , B23K26/073
CPC分类号： B23K26/0608 , B23K26/0066 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO 2 emitting at 10.6 mum is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO 2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

5. 发明申请

WO2008024212A3 FAST AXIS BEAM PROFILE SHAPING BY COLLIMATION LENSLETS 审中-公开
标题翻译：快速轴型材通过收缩线形成
公开(公告)号：WO2008024212A3
公开(公告)日：2008-08-21
申请号：PCT/US2007017685
申请日：2007-08-08
申请人： APPLIED MATERIALS INC
发明人： JENNINGS DEAN , MAYUR ABHILASH , THOMAS TIMOTHY N , PARIHAR VIJAY , ACHUTHARAMAN VEDAPURAM S , THAKUR RANDHIR P S
IPC分类号： H01S3/10 , H01S3/101
CPC分类号： B23K26/0738 , B23K26/0613 , B23K26/0676 , H01L21/268 , H01L29/7833 , Y10T117/1016
摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters (34-n) arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets (40n) have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics (42, 52) focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles (An).
摘要翻译：用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。光源包括大致以发射器的连续排布置的激光发射器（34-n）的阵列，该列横向于快轴。多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。所选择的小透镜（40n）具有对应于针对各行发射器的沿着快轴的光束偏转的一个或一系列光学偏转角。光学器件（42,52）将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角（An）的连续形成横向于沿快轴间隔开的快轴的一系列线束。

6. 发明申请

WO2008027845A3 DOPANT ACTIVATION IN DOPED SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：掺杂半导体衬底中的掺杂剂活化
公开(公告)号：WO2008027845A3
公开(公告)日：2008-06-19
申请号：PCT/US2007076910
申请日：2007-08-27
申请人： APPLIED MATERIALS INC , MUNRO JEFFREY C , NEMANI SRINIVAS D , LEE YOUNG S , MENEZES MARLON , BENCHER CHRISTOPHER DENNIS , PARIHAR VIJAY
发明人： MUNRO JEFFREY C , NEMANI SRINIVAS D , LEE YOUNG S , MENEZES MARLON , BENCHER CHRISTOPHER DENNIS , PARIHAR VIJAY
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01L21/268 , C23C16/26 , C23C16/505 , C23C16/56 , H01L21/26513
摘要： Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500°c. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.
摘要翻译：公开了用于激活掺杂半导体衬底中的掺杂剂的方法。碳前体流入设置有掺杂半导体衬底的衬底处理室中。在衬底处理室中由碳前体形成等离子体。用等离子体在衬底上沉积碳膜。在沉积小于500℃的碳膜时保持衬底的温度。沉积的碳膜暴露于电磁辐射下的时间小于10ms，并且在电磁辐射所包含的波长处具有大于0.3的消光系数。

7. 发明申请

WO2006124967A3 LOW TEMPERATURE PLASMA DEPOSITION PROCESS FOR CARBON LAYER DEPOSITION 审中-公开
标题翻译：低温等离子体沉积碳沉积过程
公开(公告)号：WO2006124967A3
公开(公告)日：2007-09-27
申请号：PCT/US2006019029
申请日：2006-05-16
申请人： APPLIED MATERIALS INC
发明人： RAMASWAMY KARTIK , HANAWA HIROJI , GALLO BIAGIO , COLLINS KENNETH S , MA KAI , PARIHAR VIJAY , JENNINGS DEAN , MAYUR ABHILASH , AL-BAYATI AMIR , NGUYEN ANDREW
IPC分类号： H01L21/31
CPC分类号： C23C16/26 , C23C16/505 , C23C16/52 , H01L21/268 , H01L21/3146
摘要： A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, and coupling RF plasma bias power or bias voltage to the workpiece.
摘要翻译：在工件上沉积碳层的方法包括将工件放置在反应器室中，将含碳处理气体引入室中，在可重入路径中产生可重入环形RF等离子体电流，该等离子体电流包括通过将等离子体RF源功率耦合到可折入路径的外部部分，以及将RF等离子体偏置功率或偏置电压耦合到工件。

8. 发明申请

WO2006055130A3 MULTIPLE BAND PASS FILTERING FOR PYROMETRY IN LASER BASED ANNEALING SYSTEMS 审中-公开
标题翻译：用于基于激光的退火系统中的多色带通滤波
公开(公告)号：WO2006055130A3
公开(公告)日：2006-07-13
申请号：PCT/US2005036796
申请日：2005-10-12
申请人： APPLIED MATERIALS INC
发明人： ADAMS BRUCE E , JENNINGS DEAN , HUNTER AARON M , MAYUR ABHILASH J , PARIHAR VIJAY , THOMAS TIMOTHY N
IPC分类号： G01J5/06 , B23K26/03 , B23K26/073
CPC分类号： G02B5/281 , G01J5/06 , H01S5/005 , H01S5/4012
摘要： A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.
摘要翻译：热处理系统包括以激光波长发射的激光辐射源，设置在反射表面和能够保持要处理的衬底的基板支撑件之间的光束投影光学器件，响应于高温计波长的高温计和波长响应光学元件，其具有用于包括激光波长的第一波长范围内的光的第一光路，所述第一光路位于激光辐射源和光束投影光学器件之间，以及用于在包括高温计的第二波长范围内的光的第二光路波长，第二光路位于光束投影光学器件和高温计之间。该系统还可以包括在激光辐射源和波长响应光学元件之间的高温计波长阻挡滤波器。

9. 发明申请

WO2008024211A3 FAST AXIS BEAM PROFILE SHAPING 审中-公开
标题翻译：快轴梁型材形状
公开(公告)号：WO2008024211A3
公开(公告)日：2008-09-25
申请号：PCT/US2007017684
申请日：2007-08-08
申请人： APPLIED MATERIALS INC
发明人： JENNINGS DEAN , MAYUR ABHILASH , THOMAS TIMOTHY N , PARIHAR VIJAY , ACHUTHARAMAN VEDAPURAM S , THAKUR RANDHIR P S
IPC分类号： H01S3/10 , H01S3/101
CPC分类号： H01S5/4025 , B23K26/0608 , B23K26/082 , H01L21/02678 , H01L21/02691 , H01S5/005 , H01S5/4012
摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpie
摘要翻译：用于退火半导体工件的动态表面退火装置具有加工性

10. 发明申请

WO2008027196A3 DYNAMIC SURFACE ANNEALING OF IMPLANTED DOPANTS WITH LOW TEMPERATURE HDPCVD PROCESS FOR DEPOSITING A HIGH EXTINCTION COEFFICIENT OPTICAL ABSORBER LAYER 审中-公开
标题翻译：具有低温HDPCVD工艺的嵌入式掺杂剂的动态表面退火以沉积高抛光系数光学吸收层
公开(公告)号：WO2008027196A3
公开(公告)日：2008-05-02
申请号：PCT/US2007018109
申请日：2007-08-14
申请人： APPLIED MATERIALS INC
发明人： PARIHAR VIJAY , BENCHER CHRISTOPHER DENNIS , KANURI RAJESH , MENEZES MARLON
IPC分类号： H01L21/76
CPC分类号： C23C16/26 , C23C14/5813 , C23C16/56 , H01L21/26513 , H01L21/268
摘要： A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber and furnishing a hydro-carbon process gas into the chamber, preferably propylene (C3H6) or toluene (C7H8) or acetylene (C2H2) or a mixture of acetylene and methane (C2H4). The process further includes inductively coupling RF plasma source power into the chamber while and applying RF plasma bias power to the wafer. The deposited amorphous carbon layer has a surppsing combination of high absorption and high strength and excellent step coverage.
摘要翻译：等离子体增强的物理气相沉积工艺在离子注入晶片上沉积无定形碳层，用于具有激光波长的强线束的晶片的动态表面退火。沉积过程在低于掺杂剂聚集阈值温度的晶片温度下进行，并且包括将晶片引入室中并将氢碳工艺气体提供到室中，优选丙烯（C 3 H 6）或甲苯（C 7 H 8）或乙炔（ C2H2）或乙炔和甲烷（C2H4）的混合物。该方法还包括将RF等离子体源功率感应耦合到腔室中，同时将RF等离子体偏置功率施加到晶片。沉积的无定形碳层具有高吸收和高强度以及优异的台阶覆盖的颠簸组合。

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