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1. 发明申请

WO2008027196A3 DYNAMIC SURFACE ANNEALING OF IMPLANTED DOPANTS WITH LOW TEMPERATURE HDPCVD PROCESS FOR DEPOSITING A HIGH EXTINCTION COEFFICIENT OPTICAL ABSORBER LAYER 审中-公开
标题翻译：具有低温HDPCVD工艺的嵌入式掺杂剂的动态表面退火以沉积高抛光系数光学吸收层
公开(公告)号：WO2008027196A3
公开(公告)日：2008-05-02
申请号：PCT/US2007018109
申请日：2007-08-14
申请人： APPLIED MATERIALS INC
发明人： PARIHAR VIJAY , BENCHER CHRISTOPHER DENNIS , KANURI RAJESH , MENEZES MARLON
IPC分类号： H01L21/76
CPC分类号： C23C16/26 , C23C14/5813 , C23C16/56 , H01L21/26513 , H01L21/268
摘要： A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber and furnishing a hydro-carbon process gas into the chamber, preferably propylene (C3H6) or toluene (C7H8) or acetylene (C2H2) or a mixture of acetylene and methane (C2H4). The process further includes inductively coupling RF plasma source power into the chamber while and applying RF plasma bias power to the wafer. The deposited amorphous carbon layer has a surppsing combination of high absorption and high strength and excellent step coverage.
摘要翻译：等离子体增强的物理气相沉积工艺在离子注入晶片上沉积无定形碳层，用于具有激光波长的强线束的晶片的动态表面退火。沉积过程在低于掺杂剂聚集阈值温度的晶片温度下进行，并且包括将晶片引入室中并将氢碳工艺气体提供到室中，优选丙烯（C 3 H 6）或甲苯（C 7 H 8）或乙炔（ C2H2）或乙炔和甲烷（C2H4）的混合物。该方法还包括将RF等离子体源功率感应耦合到腔室中，同时将RF等离子体偏置功率施加到晶片。沉积的无定形碳层具有高吸收和高强度以及优异的台阶覆盖的颠簸组合。

2. 发明申请

WO2008027845A3 DOPANT ACTIVATION IN DOPED SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：掺杂半导体衬底中的掺杂剂活化
公开(公告)号：WO2008027845A3
公开(公告)日：2008-06-19
申请号：PCT/US2007076910
申请日：2007-08-27
申请人： APPLIED MATERIALS INC , MUNRO JEFFREY C , NEMANI SRINIVAS D , LEE YOUNG S , MENEZES MARLON , BENCHER CHRISTOPHER DENNIS , PARIHAR VIJAY
发明人： MUNRO JEFFREY C , NEMANI SRINIVAS D , LEE YOUNG S , MENEZES MARLON , BENCHER CHRISTOPHER DENNIS , PARIHAR VIJAY
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： H01L21/268 , C23C16/26 , C23C16/505 , C23C16/56 , H01L21/26513
摘要： Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500°c. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.
摘要翻译：公开了用于激活掺杂半导体衬底中的掺杂剂的方法。碳前体流入设置有掺杂半导体衬底的衬底处理室中。在衬底处理室中由碳前体形成等离子体。用等离子体在衬底上沉积碳膜。在沉积小于500℃的碳膜时保持衬底的温度。沉积的碳膜暴露于电磁辐射下的时间小于10ms，并且在电磁辐射所包含的波长处具有大于0.3的消光系数。

3. 发明申请

WO2008027196A2 DYNAMIC SURFACE ANNEALING OF IMPLANTED DOPANTS WITH LOW TEMPERATURE HDPCVD PROCESS FOR DEPOSITING A HIGH EXTINCTION COEFFICIENT OPTICAL ABSORBER LAYER 审中-公开
标题翻译：具有低温HDPCVD工艺的嵌入式掺杂剂的动态表面退火以沉积高抛光系数光学吸收层
公开(公告)号：WO2008027196A2
公开(公告)日：2008-03-06
申请号：PCT/US2007018109
申请日：2007-08-14
申请人： APPLIED MATERIALS INC
发明人： PARIHAR VIJAY , BENCHER CHRISTOPHER DENNIS , KANURI RAJESH , MENEZES MARLON
IPC分类号： H01L21/04
CPC分类号： C23C16/26 , C23C14/5813 , C23C16/56 , H01L21/26513 , H01L21/268
摘要： A plasma enhanced physical vapor deposition process deposits an amorphous carbon layer on an ion-implanted wafer for use in dynamic surface annealing of the wafer with an intense line beam of a laser wavelength. The deposition process is carried out at a wafer temperature below the dopant clustering threshold temperature, and includes introducing the wafer into a chamber and furnishing a hydro-carbon process gas into the chamber, preferably propylene (C3H6) or toluene (C7H8) or acetylene (C2H2) or a mixture of acetylene and methane (C2H4). The process further includes inductively coupling RF plasma source power into the chamber while and applying RF plasma bias power to the wafer. The wafer bias voltage is set to a level at which the amorphous carbon layer that is deposited has a desired stress (compressive or tensile). We have discovered that at a wafer temperature less than or equal to 475 degrees C, total RF plasma source power of 4000 Watts at about 2 MHz, RF plasma bias power of 2000- 3000 Watts at about 13.56 MHz and a chamber pressure in a range of 3 mTorr to 2 Torr, the deposited amorphous carbon layer has a surprising combination of high absorption and high strength and excellent step coverage.
摘要翻译：等离子体增强的物理气相沉积工艺在离子注入晶片上沉积无定形碳层，用于具有激光波长的强线束的晶片的动态表面退火。沉积过程在低于掺杂剂聚集阈值温度的晶片温度下进行，并且包括将晶片引入室中并将氢碳工艺气体提供到室中，优选丙烯（C 3 H 6）或甲苯（C 7 H 8）或乙炔（ C2H2）或乙炔和甲烷（C2H4）的混合物。该方法还包括将RF等离子体源功率感应耦合到腔室中，同时将RF等离子体偏置功率施加到晶片。将晶片偏置电压设定为沉积的无定形碳层具有期望的应力（压缩或拉伸）的水平。我们已经发现，在小于或等于475摄氏度的晶圆温度下，在约2MHz的RF功率为4000瓦的RF等离子体源功率，在约13.56MHz处的RF等离子体等离子体功率为2000-3000瓦，腔室压力为一定范围 3mTorr至2Torr，沉积的非晶碳层具有高吸收和高强度以及优异的台阶覆盖度的惊人组合。

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