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1. 发明申请

WO2007140376A3 A METHOD FOR DEPOSITING AND CURING LOW-K FILMS FOR GAPFILL AND CONFORMAL FILM APPLICATIONS 审中-公开
标题翻译：一种沉积和固化低K薄膜和一致薄膜应用的方法
公开(公告)号：WO2007140376A3
公开(公告)日：2008-01-24
申请号：PCT/US2007069897
申请日：2007-05-29
申请人： APPLIED MATERIALS INC , MUNRO JEFFREY C , NEMANI SRINIVAS D
发明人： MUNRO JEFFREY C , NEMANI SRINIVAS D
IPC分类号： H01L21/469
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/3105
摘要： Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600°C or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.
摘要翻译：描述了在衬底上制造氧化硅层的方法。所述方法可以包括通过使原子氧前体和硅前体反应并在基底上沉积反应产物，在反应室中的衬底上形成氧化硅层。原子氧前体在反应室外产生。所述方法还包括在约600℃或更低的温度下加热氧化硅层，并将氧化硅层暴露于感应耦合等离子体。描述了通过将层暴露于紫外光而使沉积的氧化硅层固化并且还将该层暴露于感应耦合等离子体的附加方法。

2. 发明申请

WO2007140376A2 A METHOD FOR DEPOSITING AND CURING LOW-K FILMS FOR GAPFILL AND CONFORMAL FILM APPLICATIONS 审中-公开
标题翻译：一种沉积和固化低K薄膜和一致薄膜应用的方法
公开(公告)号：WO2007140376A2
公开(公告)日：2007-12-06
申请号：PCT/US2007/069897
申请日：2007-05-29
申请人： APPLIED MATERIALS, INC. , MUNRO, Jeffrey, C. , NEMANI, Srinivas, D.
发明人： MUNRO, Jeffrey, C. , NEMANI, Srinivas, D.
IPC分类号： H01L21/31
CPC分类号： H01L21/31633 , C23C16/401 , C23C16/452 , C23C16/56 , H01L21/02126 , H01L21/02164 , H01L21/02274 , H01L21/3105
摘要： Methods of making a silicon oxide layer on a substrate are described. The methods may include forming the silicon oxide layer on the substrate in a reaction chamber by reacting an atomic oxygen precursor and a silicon precursor and depositing reaction products on the substrate. The atomic oxygen precursor is generated outside the reaction chamber. The methods also include heating the silicon oxide layer at a temperature of about 600°C or less, and exposing the silicon oxide layer to an induced coupled plasma. Additional methods are described where the deposited silicon oxide layer is cured by exposing the layer to ultra-violet light, and also exposing the layer to an induced coupled plasma.
摘要翻译：描述在衬底上制造氧化硅层的方法。所述方法可以包括通过使原子氧前体和硅前体反应并在基底上沉积反应产物，在反应室中的衬底上形成氧化硅层。原子氧前体在反应室外产生。该方法还包括在约600℃或更低的温度下加热氧化硅层，并将氧化硅层暴露于感应耦合等离子体。描述了通过将层暴露于紫外光而使沉积的氧化硅层固化并且还将该层暴露于感应耦合等离子体的附加方法。

3. 发明申请

WO2018058344A1 FORMULATION OF ELASTOMER COPOLYMER AND BLOCK COPOLYMER 审中-公开
标题翻译：弹性体共聚物和嵌段共聚物的配方
公开(公告)号：WO2018058344A1
公开(公告)日：2018-04-05
申请号：PCT/CN2016/100466
申请日：2016-09-28
申请人： DOW GLOBAL TECHNOLOGIES LLC , TALREJA, Manish , COGEN, Jeffrey M. , YU, Haiyang , MUNRO, Jeffrey C. , MADENJIAN, Lisa S. , GILL, Susan R.
发明人： TALREJA, Manish , COGEN, Jeffrey M. , YU, Haiyang , MUNRO, Jeffrey C. , MADENJIAN, Lisa S. , GILL, Susan R.
IPC分类号： C08L23/08 , C08L23/14 , C08J3/24 , C08J9/06
摘要： A formulation of a poly(propylene-co-ethylene) elastomer copolymer and a poly(ethylene-co-1-octene) block copolymer; a method of making the formulation; a manufactured article comprising or made from the formulation; and a method of using the manufactured article.
摘要翻译：一种聚（丙烯 - 共 - 乙烯）弹性体共聚物和聚（乙烯 - 共-1-辛烯）嵌段共聚物的配方; 制造该配方的方法; 包含制剂或由制剂制成的制成品; 以及使用制造的物品的方法。

4. 发明申请

WO2013039850A1 COMPOSITIONS AND ARTICLES FORMED FROM THE SAME 审中-公开
标题翻译：组合物及其制品
公开(公告)号：WO2013039850A1
公开(公告)日：2013-03-21
申请号：PCT/US2012/054544
申请日：2012-09-11
申请人： DOW GLOBAL TECHNOLOGIES LLC , WU, Xiaosong , WALTON, Kim, L. , MUNRO, Jeffrey, C.
发明人： WU, Xiaosong , WALTON, Kim, L. , MUNRO, Jeffrey, C.
IPC分类号： C08L23/08 , C08L23/10
CPC分类号： C08L23/26 , C08L23/0815 , C08L23/10 , C08L2205/025 , C08L2312/00
摘要： The invention provides a composition comprising at least the following: A) an ethylene/α-olefin interpolymer; B) an olefin-based polymer; and C) a crosslinking agent; and wherein the ethylene/α-olefin interpolymer of component A) has the following properties: i) has a density greater than, or equal to, 0.850 g/cc; ii) a molar ratio of "vinyl to total unsaturation" greater than, or equal to, 1/10; iii) an 110/12 ratio from 6.2 to 40.
摘要翻译：本发明提供包含至少以下物质的组合物：A）乙烯/α-烯烃互聚物; B）烯烃类聚合物; 和C）交联剂; 并且其中组分A）的乙烯/α-烯烃互聚物具有以下性质：i）具有大于或等于0.850g / cc的密度; ii）“乙烯基与总不饱和度”的摩尔比大于或等于1/10; iii）110/12比例为6.2〜40。

5. 发明申请

WO2010065351A2 POLYMER PI-BOND-PHILIC FILLER COMPOSITES 审中-公开
标题翻译：聚合物PI-BOND-PHILIC FILLER复合材料
公开(公告)号：WO2010065351A2
公开(公告)日：2010-06-10
申请号：PCT/US2009065410
申请日：2009-11-20
申请人： DOW GLOBAL TECHNOLOGIES INC , MATTEUCCI SCOTT T , FEIST SHAWN D , NICKIAS PETER N , LOPEZ LEONARDO C , PAQUETTE MICHAEL S , MUNRO JEFFREY C
发明人： MATTEUCCI SCOTT T , FEIST SHAWN D , NICKIAS PETER N , LOPEZ LEONARDO C , PAQUETTE MICHAEL S , MUNRO JEFFREY C
IPC分类号： C08K9/04
CPC分类号： C08K3/08 , B01D53/02 , B01D2253/1122 , B01D2253/202 , B01D2257/7022 , C08K2003/0806 , C08L101/00
摘要： The instant invention generally provides polymer pi-bond-philic filler composite comprising a molecularly self-assembling material and a pi-bond-philic filler, and a process of making and an article comprising the polymer pi-bond-philic filler composite. The instant invention also generally provides a process of separating a pi-bond-philic gas from a separable gas mixture comprising the pi-bond-philic gas.
摘要翻译：本发明通常提供包含分子自组装材料和π-亲和填料的聚合物亲合性填料复合材料，以及制备方法和包含聚合物亲环键填料复合材料的制品。本发明还通常提供了一种从包含无亲性气体的可分离气体混合物中分离起始亲气体的方法。

6. 发明申请

WO2007030258A3 POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF A HDP-CVD SI 02 LAYER 审中-公开
公开(公告)号：WO2007030258A3
公开(公告)日：2007-03-15
申请号：PCT/US2006/031191
申请日：2006-08-10
申请人： APPLIED MATERIALS, INC. , CHEN, Xiaolin , NEMANI, Srinivas, D. , LI, DongQing , MUNRO, Jeffrey, C. , MENEZES, Marlon, E.
发明人： CHEN, Xiaolin , NEMANI, Srinivas, D. , LI, DongQing , MUNRO, Jeffrey, C. , MENEZES, Marlon, E.
IPC分类号： H01L21/3105 , H01L21/76 , H01L21/316 , C23C16/40 , C23C16/458
摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.

7. 发明申请

WO2007030258A2 POST DEPOSITION PLASMA TREATMENT TO INCREASE TENSILE STRESS OF HDP-CVD SIO2 审中-公开
标题翻译：后沉积等离子体处理增加HDP-CVD SIO2的拉伸应力
公开(公告)号：WO2007030258A2
公开(公告)日：2007-03-15
申请号：PCT/US2006031191
申请日：2006-08-10
申请人： APPLIED MATERIALS INC , CHEN XIAOLIN , NEMANI SRINIVAS D , LI DONGQING , MUNRO JEFFREY C , MENEZES MARLON E
发明人： CHEN XIAOLIN , NEMANI SRINIVAS D , LI DONGQING , MUNRO JEFFREY C , MENEZES MARLON E
IPC分类号： H01L21/316 , C23C16/40 , C23C16/458 , H01L21/762
CPC分类号： H01L21/3105 , C23C16/402 , C23C16/56 , H01L21/02164 , H01L21/02274 , H01L21/0234 , H01L21/31612
摘要： A plasma treatment process for increasing the tensile stress of a silicon wafer is described. Following deposition of a dielectric layer on a substrate, the substrate is lifted to an elevated position above the substrate receiving surface and exposed to a plasma treatment process which treats both the top and bottom surface of the wafer and increases the tensile stress of the deposited layer. Another embodiment of the invention involves biasing of the substrate prior to plasma treatment to bombard the wafer with plasma ions and raise the temperature of the substrate. In another embodiment of the invention, a two-step plasma treatment process can be used where the substrate is first exposed to a plasma at a processing position directly after deposition, and then raised to an elevated position where both the top and bottom of the wafer are exposed to the plasma.
摘要翻译：描述了用于增加硅晶片的拉伸应力的等离子体处理工艺。在衬底上沉积电介质层之后，将衬底提升到衬底接收表面上方的升高位置并暴露于等离子体处理工艺，其处理晶片的顶表面和底表面并增加沉积层的拉伸应力。本发明的另一实施例涉及在等离子体处理之前偏压衬底以用等离子体离子轰击晶片并升高衬底的温度。在本发明的另一个实施例中，可以使用两步等离子体处理工艺，其中基板首先在沉积之后直接在处理位置暴露于等离子体，然后升高到晶片的顶部和底部两者的升高位置暴露于等离子体。

8. 发明申请

WO2023272544A1 OLEFIN-BASED POLYMER COMPOSITIONS WITH IMPROVED CURE 审中-公开
公开(公告)号：WO2023272544A1
公开(公告)日：2023-01-05
申请号：PCT/CN2021/103385
申请日：2021-06-30
申请人： DOW GLOBAL TECHNOLOGIES LLC , SUN, Yabin , WU, Gaoxiang , MUNRO, Jeffrey C. , LI PI SHAN, Colin , ZHANG, Kainan
发明人： SUN, Yabin , WU, Gaoxiang , MUNRO, Jeffrey C. , LI PI SHAN, Colin , ZHANG, Kainan
IPC分类号： C08L23/16 , C08L23/18 , C08L83/05 , C08L83/06
摘要： A process, and related composition, to form a crosslinked composition, the process comprising applying heat, and optionally radiation, to a composition that comprises at least the following components: a) elastomer, or an olefin-based polymer that has a density > 0.920 g/cc, and wherein component a has a total unsaturation ≥ 0.20 /1000C; b) a molecule comprising at least one Si-H group; c) at least one peroxide; and d) optionally, at least one crosslinking coagent different from component b. A process, and related composition, to form a crosslinked composition, the process comprising applying radiation, and optionally heat, to a composition that comprises the following components: a) elastomer, or an olefin-based polymer that has a density > 0.920 g/cc, and wherein component a has a total unsaturation ≥ 0.20 /1000C; b) a molecule comprising at least one Si-H group.

9. 发明申请

WO2013002976A1 CLEAR GRAPHIC CLING FILMS 审中-公开
标题翻译：清晰图形贴膜
公开(公告)号：WO2013002976A1
公开(公告)日：2013-01-03
申请号：PCT/US2012/041021
申请日：2012-06-06
申请人： DOW GLOBAL TECHNOLOGIES LLC , WEAVER, Laura, Bauerle , MUNRO, Jeffrey, C. , DANIEL, Sherrika, D.
发明人： WEAVER, Laura, Bauerle , MUNRO, Jeffrey, C. , DANIEL, Sherrika, D.
IPC分类号： C08L23/00 , C08J5/18
CPC分类号： B29C43/003 , B29C43/24 , B29C47/0004 , C08J5/18 , C08J2323/10 , C08L23/08 , C08L23/0815 , C08L23/10 , C08L23/14 , C08L2205/025 , C08L2207/064
摘要： The instant invention provides a polymer composition suitable for clear graphic cling film applications, method of producing the same, articles made therefrom, and methods for making such articles. The polymer composition suitable for clear graphic cling film applications, according to the present invention, comprises: (a) a polyolefin composition selected from the group consisting of a propylene-based composition, and an ethylene-based composition, wherein the propylene-based composition has an melt flow rate in the range of from 2 to 8 g/10 minutes, a dynamic mechanical spectroscopy (DMS) value in the range of from 3700 to 10100 Pascal-seconds at 0.1 radian per second, and from 650 to 1200 Pascal-seconds at 100 radian per second measured at 190° C, and having a crystallinity in the range of from at least 4 percent by weight to 11 percent by weight, and a heat of fusion of in the range of from 6 to 19 Joules/gram, and a DSC melting point of less than 110° C (measured via DSC, second heat), and wherein the ethylene-based composition has a melt index (I2) in the range of from 0.5 to 5 g/10 minutes, and a density in the range of from 0.865 to 0.880 g/cm, a DMS value in the range of from 1800 to 17000 Pascal- seconds at 0.1 radian per second, and from 750 to 2200 Pascal- seconds at 100 radian per second measured at 190° C, and having a crystallinity in the range of from at least 14 percent by weight to 20 percent by weight, and a heat of fusion in the range of from 40 to 60 Joules/gram, and a DSC melting point of less than 70° C (measured via DSC, second heat), and (b) one or more alkyl phosphate-based release agent; wherein when said polyolefin composition is formed into a clear graphic cling film having a 7 (+ 2) mils, said clear graphic cling film has a haze in the range of from less than 4 percent, for example from 0.3 to 4 percent, measured according to ASTM-D 1003.
摘要翻译：本发明提供了一种适用于透明粘贴膜应用的聚合物组合物，其制备方法，由其制成的制品以及制备这种制品的方法。根据本发明的适用于透明粘贴膜应用的聚合物组合物包括：（a）选自基于丙烯的组合物和基于乙烯的组合物的聚烯烃组合物，其中基于丙烯的组合物具有在2至8g / 10分钟范围内的熔体流动速率，在0.1弧度/秒时的动态机械光谱（DMS）值范围为3700至10100帕斯卡 - 秒，以及650至1200帕斯卡 - 在190℃下以100弧度/秒测量的秒，其结晶度为至少4重量％至11重量％，熔化热为6至19焦耳/克，DSC熔点小于110℃（通过DSC测量，第二次热），其中乙烯基组合物的熔体指数（I 2）在0.5〜5g / 10分钟的范围内，密度在0.865〜0.880g / cm的范围内，DMS值在该范围内 1800至17000帕斯卡 - 秒，0.1弧度/秒，750度至2200帕斯卡 - 秒，100弧度/秒，在190℃下测量，结晶度至少为14％至20 重量百分比，熔融热为40至60焦耳/克，DSC熔点低于70℃（通过DSC，第二次热测定），和（b）一种或多种烷基磷酸酯脱模剂; 其中当所述聚烯烃组合物形成具有7（+ 2）密耳的透明粘贴膜时，所述透明粘贴膜的雾度在小于4％，例如0.3至4％的范围内，根据至ASTM-D 1003。

10. 发明申请

WO2008048862A3 FORMATION OF HIGH QUALITY DIELECTRIC FILMS OF SILICON DIOXIDE FOR STI: USAGE OF DIFFERENT SILOXANE-BASED PRECURSORS FOR HARP II - REMOTE PLASMA ENHANCED DEPOSITION PROCESSES 审中-公开
标题翻译：用于STI的高质量二氧化硅电介质膜的形成：用于HARP II的不同硅氧烷基前体 - 远程等离子体增强沉积工艺
公开(公告)号：WO2008048862A3
公开(公告)日：2008-10-09
申请号：PCT/US2007081139
申请日：2007-10-11
申请人： APPLIED MATERIALS INC , MALLICK ABHIJIT BASU , MUNRO JEFFREY C , NEMANI SRINIVAS D
发明人： MALLICK ABHIJIT BASU , MUNRO JEFFREY C , NEMANI SRINIVAS D
IPC分类号： C23C16/40 , C23C16/04 , H01L21/316
CPC分类号： C23C16/045 , C23C16/401 , C23C16/452 , C23C16/45525 , C23C16/45553 , H01L21/02164 , H01L21/022 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/3105 , H01L21/31116 , H01L21/3122 , H01L21/31612 , H01L21/31633 , H01L21/76224 , Y10S438/931
摘要： Methods of depositing a dielectric layer in a gap formed on a substrate are described. The methods include introducing an organo-silicon precursor and an oxygen precursor to a deposition chamber. The organo-silicon precursor has a C:Si atom ratio of less than 8, and the oxygen precursor comprises atomic oxygen that is generated outside the deposition chamber. The precursors are reacted to form the dielectric layer in the gap. Methods of filling gaps with dielectric materials are also described. These methods include providing an organo-silicon precursor having a C:Si atom ratio of less than 8 and an oxygen precursor, and generating a plasma from the precursors to deposit a first portion of the dielectric material in the gap. The dielectric material may be etched, and a second portion of dielectric material may be formed in the gap. The first and second portions of the dielectric material may be annealed.
摘要翻译：描述了在衬底上形成的间隙中沉积介电层的方法。该方法包括将有机硅前体和氧前体引入沉积室。有机硅前体具有小于8的C：Si原子比，并且氧前体包含在沉积室外部产生的原子氧。前体反应以在间隙中形成介电层。还描述了用介电材料填充间隙的方法。这些方法包括提供具有小于8的C：Si原子比率的有机硅前体和氧前体，并且从前体产生等离子体以将第一部分介电材料沉积在间隙中。可以蚀刻介电材料，并且可以在间隙中形成介电材料的第二部分。介电材料的第一和第二部分可以被退火。

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