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    • 2. 发明申请
    • MICROWAVE ROTATABLE SPUTTERING DEPOSITION
    • 微波可旋转溅射沉积
    • WO2009137513A2
    • 2009-11-12
    • PCT/US2009042891
    • 2009-05-05
    • APPLIED MATERIALS INCSTOWELL MICHAEL WKRISHNA NETY
    • STOWELL MICHAEL WKRISHNA NETY
    • C23C14/35C23C14/22C23C14/34
    • C23C14/357H01J37/32192H01J37/3405H01J37/3426
    • Disclosed is an invention that uses a coaxial microwave antenna as a primary plasma source in PVD. The coaxial microwave antenna is positioned inside a sputtering target. Instead of using a cathode assist in sputtering, microwaves generated from the coaxial microwave antenna may leak through the sputtering target that comprises a dielectric material to form microwave plasma outside the sputtering target. To further enhance plasma density, a magnetron or a plurality of magnetrons may be added inside the target to help confine secondary electrons. An electric potential may be formed between adjacent magnetrons and may further enhance ionization. To achieve directional control of the generated microwaves, a shield that comprises a dielectric material or dielectric material coated metal may be added proximate the coaxial microwave antenna. Furthermore, for high utilization of expensive target materials, a target can rotate to improve the utilization efficiency.
    • 公开了使用同轴微波天线作为PVD中的主要等离子体源的发明。 同轴微波天线位于溅射靶内。 代替在溅射中使用阴极辅助,从同轴微波天线产生的微波可以通过包含电介质材料的溅射靶泄漏,以在溅射靶外形成微波等离子体。 为了进一步提高等离子体密度,可以在靶内部添加磁控管或多个磁控管以帮助限制二次电子。 可以在相邻的磁控管之间形成电位,并且可以进一步增强电离。 为了实现产生的微波的方向控制,可以在同轴微波天线附近添加包括介电材料或电介质材料涂覆的金属的屏蔽。 此外,为了高​​利用昂贵的目标材料,目标可以旋转以提高利用效率。
    • 6. 发明申请
    • SURFACE PREHEATING TREATMENT OF PLASTICS SUBSTRATE
    • 塑料衬底的表面预热处理
    • WO2009117745A2
    • 2009-09-24
    • PCT/US2009044213
    • 2009-05-15
    • APPLIED MATERIALS INCSTOWELL MICHAEL WKRISHNA NETY
    • STOWELL MICHAEL WKRISHNA NETY
    • C23C14/02C23C14/50C23C16/02
    • B05D3/0227B05D1/60B05D1/62B05D7/02C23C14/541C23C16/46
    • A source of IR radiation is used to heat a plastic substrate in a fast fashion inside a processing chamber, where the processing chamber is configured to preheat the plastic substrate and to perform thin film deposition, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD), or plasma etching and cleaning. One aspect of using the source of IR radiation is to preheat only the surface of the plastic substrate while the core of the plastic substrate remains substantially unheated, so that the structure of the plastic substrate may remain unchanged. Meanwhile, the surface properties of the plastic substrate may be modified after the preheating treatment. The source of IR radiation may be provided at wavelength selected to substantially match the absorption wavelength of the plastic substrate. The plastic substrate moves through the heat flux zone generated by the source of IR radiation at a controllable speed.
    • 红外辐射源用于在处理室内以快速方式加热塑料衬底,其中处理室被配置为预热塑料衬底并执行薄膜沉积,诸如化学气相沉积(CVD)或物理蒸气 沉积(PVD)或等离子体蚀刻和清洁。 使用IR辐射源的一个方面是仅预热塑料基材的表面,而塑料基材的核心基本保持不加热,使得塑料基材的结构可以保持不变。 同时,塑料基材的表面性质可以在预热处理后改变。 IR辐射源可以被提供在被选择为与塑料衬底的吸收波长基本匹配的波长处。 塑料基板以可控的速度移动通过IR辐射源产生的热通量区。