会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • NANOCRYSTAL FORMATION
    • 纳米结构
    • WO2008005892A3
    • 2008-12-18
    • PCT/US2007072577
    • 2007-06-29
    • APPLIED MATERIALS INCKRISHNA NETY MHOFMANN RALFSINGH KAUSHAL KARMSTRONG KARL J
    • KRISHNA NETY MHOFMANN RALFSINGH KAUSHAL KARMSTRONG KARL J
    • H01L21/28H01L29/76
    • H01L21/28273H01L29/42332H01L29/7881
    • In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5OE012 cm-2, preferably, at least about 8OE012 cm-2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.
    • 在一个实施例中,提供了一种在衬底上形成金属纳米晶体材料的方法,其包括将衬底暴露于预处理工艺,在衬底上形成隧道电介质层,将衬底暴露于后处理工艺,形成金属纳米晶体 并在所述金属纳米晶层上形成介电覆盖层。 该方法进一步提供形成金属纳米晶层,其纳米晶密度为至少约50E012cm -2,优选为至少约80O12 cm -2。 在一个实例中,金属纳米晶层包含铂,钌或镍。 在另一个实施例中,提供了一种在衬底上形成多层金属纳米晶体材料的方法,其包括形成多个双层,其中每个双层包含沉积在金属纳米晶层上的中间介电层。 一些示例包括10,50,100,200或更多的双层。