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1. 发明公开

EP2212962A4 METHOD FOR HIGH VOLUME MANUFACTURING OF THIN FILM BATTERIES 有权
标题翻译：用于大批量生产薄薄膜电池
公开(公告)号：EP2212962A4
公开(公告)日：2012-12-05
申请号：EP08842733
申请日：2008-10-23
申请人： APPLIED MATERIALS INC , MOTOROLA INC
发明人： KWAK BYUNG-SUNG , KRISHNA NETY , EISENBEISER KURT , DAUKSHER WILLIAM J , CANDELARIA JON
IPC分类号： H01M10/00 , B05C1/00 , H01M6/40
CPC分类号： H01M10/0585 , H01M6/40 , H01M10/0436 , H01M10/052 , H01M2300/0068

2. 发明专利

AU2003256620A1 LITHOGRAPHIC TEMPLATE AND METHOD OF FORMATION 未知
公开(公告)号：AU2003256620A1
公开(公告)日：2004-03-03
申请号：AU2003256620
申请日：2003-07-18
申请人： MOTOROLA INC
发明人： TALIN ALBERT ALEC , BAKER JEFFREY H , DAUKSHER WILLIAM J , HOOPER ANDY , RESNICK DOUGLAS J
IPC分类号： C23C14/08 , G03F7/00 , G03F7/09 , H01L21/00
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template ( 10 ) is formed having a substrate ( 12 ), a transparent conductive layer ( 16 ) formed on a surface ( 14 ) of the substrate ( 12 ) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer ( 20 ) formed on a surface ( 18 ) of the transparent conductive layer ( 16 ). The template ( 10 ) is used in the fabrication of a semiconductor device ( 30 ) for affecting a pattern in device ( 30 ) by positioning the template ( 10 ) in close proximity to semiconductor device ( 30 ) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material. The template ( 10 ) is then removed to complete fabrication of semiconductor device ( 30 ).

3. 发明专利

DE19810632A1 Susceptor for fast thermo-processing of semiconductor substrate 未知
公开(公告)号：DE19810632A1
公开(公告)日：1998-09-24
申请号：DE19810632
申请日：1998-03-12
申请人： MOTOROLA INC
发明人： THOMPSON DANNY L , MELNICK BRADLEY M , DAUKSHER WILLIAM J
IPC分类号： H01L21/00 , H01L21/68 , H01L21/324
摘要： The susceptor comprises a base (10) with a flat surface (18) and a vertical, peripheral side wall (13), surrounding the surface working region (14) which, together with the side wall, defines a cavity. There are numerous contact points (20), extending from the working region into the cavity in such an arrangement as to support a semiconductor wafer (21) forming the substrate. The side wall can support a cover for closing and/or surrounding the cavity. The contact points have a base of 0.025 inches in cross-section.

4. 发明专利

AU2003232155A1 METHOD OF FORMING A RIM PHASE SHIFTING MASK AND USING THE RIM PHASE SHIFTING MASK TO FORM A SEMICONDUCTOR DEVICE 未知
公开(公告)号：AU2003232155A1
公开(公告)日：2004-02-23
申请号：AU2003232155
申请日：2003-05-15
申请人： MOTOROLA INC
发明人： NORDQUIST KEVIN J , DAUKSHER WILLIAM J , GARZA CESAR M , WU WEI E , ROMAN BERNARD J , MANGAT PANWITTER J S
IPC分类号： G03F1/29 , G03F7/20 , H01L21/027 , G03F1/00 , G03F7/09
摘要： A semiconductor device is formed by patterning a resist layer using a rim phase shifting mask. A multilayer or single patterning layer to form the different phase-shifting regions and opaque regions is used to manufacture the rim phase shifting mask. First phase shifting regions are formed by transferring an opening in the multilayer or single patterning layer through an opaque layer and a transparent substrate. At least portions of the same multilayer or single patterning layer are used to recess the opaque layer a predetermined distance to form rims (second phase shifting regions). The first phase-shifting regions phase shift the light traveling through them 180 degrees relative to the light traveling through the rims, thereby increasing the contrast of the light traveling through the rim phase shifting mask.

5. 发明专利

AU2003247863A1 LITHOGRAPHIC TEMPLATE HAVING A REPAIRED GAP DEFECT 未知
公开(公告)号：AU2003247863A1
公开(公告)日：2004-02-16
申请号：AU2003247863
申请日：2003-07-11
申请人： MOTOROLA INC
发明人： MANCINI DAVID P , DAUKSHER WILLIAM J , NORDQUIST KEVIN J , RESNICK DOUGLAS J
IPC分类号： G03F7/20 , B29C59/16 , B41C20060101 , G03F1/60 , G03F7/00 , G03F7/16 , G21K5/00 , H01L21/027 , H01L21/3205 , H01L21/4763 , H05B6/00
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template ( 10 ) is formed having a relief structure ( 26 ) and a repaired gap defect ( 36 ) within the relief structure ( 26 ). The template ( 10 ) is used in the fabrication of a semiconductor device ( 40 ) for affecting a pattern in device ( 40 ) by positioning the template ( 10 ) in close proximity to semiconductor device ( 40 ) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template ( 10 ) is then removed to complete fabrication of semiconductor device ( 40 ).

6. 发明申请

WO2004017388A3 LITHOGRAPHIC TEMPLATE AND METHOD OF FORMATION 审中-公开
标题翻译：光刻模板和形成方法
公开(公告)号：WO2004017388A3
公开(公告)日：2004-08-12
申请号：PCT/US0322559
申请日：2003-07-18
申请人： MOTOROLA INC
发明人： TALIN ALBERT ALEC , BAKER JEFFREY H , DAUKSHER WILLIAM J , HOOPER ANDY , RESNICK DOUGLAS J
IPC分类号： C23C14/08 , G03F7/00 , G03F7/09
CPC分类号： B82Y10/00 , B82Y40/00 , C23C14/086 , G03F7/0002 , G03F7/0017 , G03F7/093
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive material.
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，光子器件，更具体地涉及一种光刻模板，其具有衬底（12），形成在衬底（12）的表面（14）上的透明导电层通过低压溅射将衬底（12）的厚度设置为允许紫外光优选透过90％的厚度，以及形成在透明导电层（16）的表面（18）上的图案化层（20）。模板（10）用于制造半导体器件（30），用于通过将模板（10）放置在靠近其上形成有辐射敏感材料的半导体器件（30）的位置来影响器件（30）中的图案，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕图像中。然后通过模板施加辐射，以固化辐射敏感材料的一部分并在辐射敏感材料中限定图案。

7. 发明申请

WO2008005605A3 FUEL CELL HAVING PATTERNED SOLID PROTON CONDUCTING ELECTROLYTES 审中-公开
标题翻译：燃料电池具有图案化的固体质子导电电解质
公开(公告)号：WO2008005605A3
公开(公告)日：2008-08-07
申请号：PCT/US2007065438
申请日：2007-03-29
申请人： MOTOROLA INC , KRISHNAN RAMKUMAR , DAUKSHER WILLIAM J , KORIPELLA CHOWDARY R
发明人： KRISHNAN RAMKUMAR , DAUKSHER WILLIAM J , KORIPELLA CHOWDARY R
IPC分类号： H01M8/00 , H01M4/86 , H01M8/10
CPC分类号： H01M4/8885 , H01M4/8605 , H01M4/98 , H01M8/1006 , H01M8/1023 , H01M8/1039 , H01M8/1076 , Y02P70/56
摘要： In a method for patterning a solid proton conducting electrolyte (22, 60) for a micro fuel cell a first side (30, 63) of electrolyte (22, 60) is patterned to increase the surface area, which is coated with an electrocatalyst (33, 66), providing an electrical conductor (20) to the first side (22, 60), and an electrical conductor (15, 16) to a second side (19) of the electrolyte (22, 60). One exemplary embodiment comprises depositing a solid proton conducting electrolyte (60) over a substrate (12), patterning the electrolyte (60) to form a plurality of pedestals (28), each having an anode side adjacent a anode region (42) and a cathode side adjacent a cathode region (43), coating the anode (42) and cathode (43) sides with an electrocatalyst (33), providing a first electrical conductor (15, 16) to the anode side (42); and a second electrical conductor (20) to the cathode side (43).
摘要翻译：在用于微型燃料电池的固体质子传导电解质（22,60）的图案化方法中，电解质（22,60）的第一侧（30,63）被图案化以增加涂覆有电催化剂的表面积（（20,32,66），为所述第一侧（22,60）提供电导体（20），并且向所述电解质（22,60）的第二侧（19）提供电导体（15,16）。一个示例性实施方案包括在基底（12）上沉积固体质子传导电解质（60），图案化电解质（60）以形成多个基座（28），每个基座具有邻近阳极区（42）的阳极侧和（43）相邻的阴极侧，用电催化剂（33）涂覆阳极（42）和阴极（43）侧，向阳极侧（42）提供第一电导体（15,16）; 和第二电导体（20）连接到阴极侧（43）。

8. 发明申请

WO2006057745A2 DIRECT IMPRINTING OF ETCH BARRIERS USING STEP AND FLASH IMPRINT LITHOGRAPHY 审中-公开
标题翻译：使用步骤和闪光印刷法直接填充蚀刻障碍物
公开(公告)号：WO2006057745A2
公开(公告)日：2006-06-01
申请号：PCT/US2005038035
申请日：2005-10-21
申请人： MOTOROLA INC , GEHOSKI KATHY A , DAUKSHER WILLIAM J , LE NGOC V , RESNICK DOUGLAS J
发明人： GEHOSKI KATHY A , DAUKSHER WILLIAM J , LE NGOC V , RESNICK DOUGLAS J
IPC分类号： H01L21/4763
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/76814 , H01L21/76838
摘要： A direct imprinting process for Step and Flash Imprint Lithography includes providing (40) a substrate (12); forming (44) an etch barrier layer (14) on the substrate; patterning (46) the etch barrier layer with a template (16) while curing with ultraviolet light through the template, resulting in a patterned etch barrier layer and a residual layer (20) on the substrate; and performing (48) an etch to substantially remove the residual layer. Optionally, a patterning layer (52) may be formed on the substrate (12) prior to forming the etch barrier layer (14). Additionally, an adhesive layer (13) may be applied (42) between the substrate (12) and the etch barrier layer (14).
摘要翻译：步进和闪光印记光刻技术的直接印刷工艺包括提供（40）基材（12）; 在衬底上形成（44）蚀刻阻挡层（14）; 在通过模板的紫外线固化的同时用模板（16）对蚀刻阻挡层进行图案化（46），从而在衬底上产生图案化的蚀刻阻挡层和残余层（20）; 并执行（48）蚀刻以基本上去除残留层。可选地，在形成蚀刻阻挡层（14）之前，可以在衬底（12）上形成图案化层（52）。另外，可以在衬底（12）和蚀刻阻挡层（14）之间施加粘合剂层（13）（42）。

9. 发明申请

WO2004011258A2 LITHOGRAPHIC TEMPLATE HAVING A REPAIRED GAP DEFECT 审中-公开
标题翻译：具有修复的缺陷的平台模板
公开(公告)号：WO2004011258A2
公开(公告)日：2004-02-05
申请号：PCT/US0321759
申请日：2003-07-11
申请人： MOTOROLA INC
发明人： MANCINI DAVID P , DAUKSHER WILLIAM J , NORDQUIST KEVIN J , RESNICK DOUGLAS J
IPC分类号： G03F7/20 , B29C59/16 , B41C20060101 , G03F1/60 , G03F7/00 , G03F7/16 , G21K5/00 , H01L21/027 , H01L21/3205 , H01L21/4763 , H05B6/00 , B41C
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/60 , G03F7/0002
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to an improved lithographic template including a repaired defect, a method of fabricating the improved lithographic template, a method for repairing defects present in the template, and a method for making semiconductor devices with the improved lithographic template. The lithographic template (10) is formed having a relief structure (26) and a repaired gap defect (36) within the relief structure (26). The template (10) is used in the fabrication of a semiconductor device (40) for affecting a pattern in device (40) by positioning the template (10) in close proximity to semiconductor device (40) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief structure present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (40).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及包括修复缺陷的改进的光刻模板，制造改进的光刻模板的方法，修复模板中存在的缺陷的方法，以及用于制造具有改进的光刻模板的半导体器件的方法。光刻模板（10）形成在浮雕结构（26）内具有浮雕结构（26）和修复的间隙缺陷（36）。模板（10）用于制造半导体器件（40），用于通过将模板（10）靠近其上形成有辐射敏感材料的半导体器件（40）定位来影响器件（40）中的图案，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕结构中。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（40）的制造。

10. 发明申请

WO02071150A3 LITHOGRAPHIC TEMPLATE 审中-公开
标题翻译：光刻模板
公开(公告)号：WO02071150A3
公开(公告)日：2003-07-24
申请号：PCT/US0202266
申请日：2002-01-24
申请人： MOTOROLA INC
发明人： MANCINI DAVID P , RESNICK DOUG J , DAUKSHER WILLIAM J
IPC分类号： G03F7/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , Y10S438/942 , Y10S438/945 , Y10T428/31507
摘要： This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), an optional etch stop layer (16) formed on a surface (14) of the substrate (12), and a patterning layer (20) formed on a surface (18) of the etch stop layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to further cure portions of the radiation sensitive material and further define the pattern in the radiation sensitive material. The template (10) is then removed to complete fabrication of semiconductor device (30).
摘要翻译：本发明涉及半导体器件，微电子器件，微机电器件，微流体器件，更具体地涉及光刻模板，形成光刻模板的方法以及用该光刻模板形成器件的方法。光刻模板（10）形成为具有衬底（12），形成在衬底（12）的表面（14）上的任选的蚀刻停止层（16），以及形成在表面（18）上的图形层）的蚀刻停止层（16）。模板（10）用于通过将模板（10）定位成紧邻其上形成有辐射敏感材料的半导体器件（30）而影响器件（30）中的图案的半导体器件（30）的制造，以及施加压力以使辐射敏感材料流入存在于模板上的浮雕图像。然后通过模板施加辐射，以进一步固化辐射敏感材料的部分，并进一步限定辐射敏感材料中的图案。然后移除模板（10）以完成半导体器件（30）的制造。

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