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1. 发明申请

WO2014008162A1 ALUMINUM-NITRIDE BUFFER AND ACTIVE LAYERS BY PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译：铝 - 氮化物缓冲层和活性层通过物理蒸气沉积
公开(公告)号：WO2014008162A1
公开(公告)日：2014-01-09
申请号：PCT/US2013/048879
申请日：2013-07-01
申请人： APPLIED MATERIALS, INC. , ZHU, Mingwei , PATIBANDLA, Nag B. , WANG, Rongjun , AGRAWAL, Vivek , SUBRAMANI, Anantha , DIEHL, Daniel L. , TANG, Xianmin
发明人： ZHU, Mingwei , PATIBANDLA, Nag B. , WANG, Rongjun , AGRAWAL, Vivek , SUBRAMANI, Anantha , DIEHL, Daniel L. , TANG, Xianmin
IPC分类号： C23C14/34 , C23C14/06 , C23C14/54
CPC分类号： H01L21/0254 , C23C14/0036 , C23C14/0641 , H01J37/3426 , H01J37/3467 , H01L21/02458 , H01L21/02631 , H01L21/3065 , H01L21/3228
摘要： Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.
摘要翻译：本文描述的本发明的实施例一般涉及用于形成高质量缓冲层的装置和方法，以及用于形成有用的半导体器件的III-V层，例如功率器件，发光二极管（LED），激光二极管（LD）或其他有用的装置。本发明的实施例还可以包括用于形成用于形成有用的半导体器件的高质量缓冲层，III-V族层和电极层的装置和方法。在一些实施例中，装置和方法包括使用具有一个或多个物理气相沉积（PVD）室的一个或多个簇工具，其适于将具有高结晶取向的高质量氮化铝（AlN）缓冲层沉积在同时是多个基板的表面。

2. 发明申请

WO2012082788A2 GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER 审中-公开
标题翻译：基于氮化镓的基于PVD的氮化铝缓冲层的LED制造
公开(公告)号：WO2012082788A2
公开(公告)日：2012-06-21
申请号：PCT/US2011/064722
申请日：2011-12-13
申请人： APPLIED MATERIALS, INC. , ZHU, Mingwei , AGRAWAL, Vivek , PATIBANDLA, Nag, B. , NALAMASU, Omkaram
发明人： ZHU, Mingwei , AGRAWAL, Vivek , PATIBANDLA, Nag, B. , NALAMASU, Omkaram
IPC分类号： H01L21/203 , H01L33/00
CPC分类号： H01L21/0254 , C23C14/0641 , C23C14/568 , C23C16/34 , C23C28/04 , C23C28/044 , C30B23/02 , C30B25/08 , C30B29/406 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0262 , H01L21/02631 , H01L33/007 , H01L33/0095
摘要： Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described. For example, a multi-chamber system includes a physical vapor deposition (PVD) chamber having a target composed of aluminum. A chamber is also included and is adapted to deposit un-doped or n-type gallium nitride, or both. In another example, a method of fabricating a light-emitting diode (LED) structure includes forming an aluminum nitride layer above a substrate in a physical vapor deposition (PVD) chamber of a multi-chamber system. An un-doped or n-type gallium nitride layer is formed on the aluminum nitride layer in a second chamber of the multi-chamber system.
摘要翻译：描述了用物理气相沉积（PVD）形成的氮化铝缓冲层制造基于氮化镓的发光二极管（LED）。例如，多室系统包括具有由铝构成的靶的物理气相沉积（PVD）室。还包括腔室并且适于沉积未掺杂或n型氮化镓或两者。在另一实例中，制造发光二极管（LED）结构的方法包括在多室系统的物理气相沉积（PVD）室中在衬底上方形成氮化铝层。未掺杂或n型氮化镓层形成在多室系统的第二室中的氮化铝层上。

3. 发明公开

EP3976672A1 COLOR CONVERSION LAYERS FOR LIGHT-EMITTING DEVICES 审中-实审
公开(公告)号：EP3976672A1
公开(公告)日：2022-04-06
申请号：EP20813075.7
申请日：2020-05-20
申请人： Applied Materials, Inc.
发明人： GANAPATHIAPPAN, Sivapackia , LUO, Yingdong , ZHANG, Daihua , NG, Hou T. , ZHU, Mingwei , PATIBANDLA, Nag B.
IPC分类号： C08F20/10 , C08F2/50 , C08F2/44 , C08K5/37 , C08K5/00 , H01L33/26

4. 发明公开

EP3942088A1 METHOD AND APPARATUS FOR DEPOSITION OF METAL NITRIDES 审中-公开
公开(公告)号：EP3942088A1
公开(公告)日：2022-01-26
申请号：EP20778127.9
申请日：2020-03-18
申请人： Applied Materials, Inc.
发明人： ZHU, Mingwei , YANG, Zihao , PATIBANDLA, Nag B. , GODET, Ludovic , CAO, Yong , DIEHL, Daniel Lee , CHEN, Zhebo
IPC分类号： C23C14/06 , C23C14/00 , C23C14/22 , C23C14/54 , C23C14/56 , H01J37/32 , H01L39/00

5. 发明申请

WO2022197489A1 LED TRANSFER MATERIALS AND PROCESSES 审中-公开
公开(公告)号：WO2022197489A1
公开(公告)日：2022-09-22
申请号：PCT/US2022/019368
申请日：2022-03-08
申请人： APPLIED MATERIALS, INC.
发明人： NG, Hou T. , PATIBANDLA, Nag , SRIDHAR, Uma , GANAPATHIAPPAN, Sivapackia , ZHU, Mingwei
IPC分类号： H01L33/00 , H01L33/36
摘要： Exemplary processing methods of forming an LED structure on a backplane may include coupling a first transfer substrate with an LED source substrate. The LED source substrate may include a plurality of fabricated LEDs. The coupling of the first transfer substrate may be produced with a first coupling material extending between the first transfer substrate and each LED of the plurality of fabricated LEDs. The methods may include separating the LED source substrate from the LEDs. The methods may include coupling a second transfer substrate with the first transfer substrate. The coupling of the first transfer substrate may be produced with a second coupling material extending between the second transfer substrate and each LED of the plurality of fabricated LEDs. The methods may include separating the first transfer substrate from the second transfer substrate. The methods may include bonding the plurality of fabricated LEDs with a display backplane.

6. 发明申请

WO2020242850A1 COLOR CONVERSION LAYERS FOR LIGHT-EMITTING DEVICES 审中-公开
公开(公告)号：WO2020242850A1
公开(公告)日：2020-12-03
申请号：PCT/US2020/033735
申请日：2020-05-20
申请人： APPLIED MATERIALS, INC.
发明人： GANAPATHIAPPAN, Sivapackia , LUO, Yingdong , ZHANG, Daihua , NG, Hou T. , ZHU, Mingwei , PATIBANDLA, Nag B.
IPC分类号： C08F20/10 , C08F2/50 , C08F2/44 , C08K5/37 , C08K5/00 , H01L33/26
摘要： A photocurable composition includes a nanomaterial selected to emit radiation in a first wavelength band in the visible light range in response to absorption of radiation in a second wavelength band in the UV or visible light range, one or more (meth)acrylate monomers, and a photoinitiator that initiates polymerization of the one or more (meth)acrylate monomers in response to absorption of radiation in the second wavelength band. The second wavelength band is different than the first wavelength band. A light-emitting device includes a plurality of light-emitting diodes and the cured photocurable composition in contact with a surface through which radiation in a first wavelength band in the UV or visible light range is emitted from each of the light-emitting diodes.

7. 发明申请

WO2018005118A1 SYSTEMS AND METHODS FOR TRANSFER OF MICRO-DEVICES 审中-公开
标题翻译：用于转移微器件的系统和方法
公开(公告)号：WO2018005118A1
公开(公告)日：2018-01-04
申请号：PCT/US2017/037742
申请日：2017-06-15
申请人： APPLIED MATERIALS, INC.
发明人： ZHU, Mingwei , GANAPATHIAPPAN, Sivapackia , FU, Boyi , NG, Hou T. , PATIBANDLA, Nag B.
IPC分类号： H01L25/075 , H01L21/677
摘要： An apparatus for positioning micro-devices on a substrate includes one or more supports to hold a donor substrate and a destination substrate, an adhesive dispenser to deliver adhesive on micro-devices on the donor substrate, a transfer device including a transfer surface to transfer the micro-devices from the donor substrate to the destination substrate, and a controller. The controller is configured to operate the adhesive dispenser to selectively dispense the adhesive onto selected micro-devices on the donor substrate based on a desired spacing of the selected micro-devices on the destination substrate. The controller is configured to operate the transfer device such that the transfer surface engages the adhesive on the donor substrate to cause the selected micro-devices to adhere to the transfer surface and the transfer surface then transfers the selected micro-devices from the donor substrate to the destination substrate.
摘要翻译：用于将微器件定位在衬底上的设备包括：一个或多个支撑件以保持供体衬底和目标衬底;粘合剂分配器，用于在供体衬底上的微器件上传送粘合剂;转移器件，包括用于将微器件从施主衬底转移到目标衬底的转移表面，以及控制器。控制器被配置为操作粘合剂分配器以基于目标基板上的所选微型器件的期望间隔选择性地将粘合剂分配到供体基板上的选定微型器件上。控制器被配置为操作转移装置，使得转移表面与供体基底上的粘合剂接合，以使选定的微型器件粘附到转移表面，然后转移表面将选择的微器件从供体基底转移到目标基板。

8. 发明申请

WO2021168007A1 HIGH CRITICAL TEMPERATURE METAL NITRIDE LAYER WITH OXIDE OR OXYNITRIDE SEED LAYER 审中-公开
公开(公告)号：WO2021168007A1
公开(公告)日：2021-08-26
申请号：PCT/US2021/018414
申请日：2021-02-17
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Zihao , ZHU, Mingwei , MANGIPUDI, Shriram , CHOWDHURY, Mohammad Kamruzzaman , LAVAN, Shane , CHEN, Zhebo , CAO, Yong , PATIBANDLA, Nag B.
IPC分类号： H01L39/12 , G01J11/00 , G01J1/42
摘要： A superconducting device includes a substrate, a metal oxide or metal oxynitride seed layer on the substrate, and a metal nitride superconductive layer disposed directly on the seed layer. The seed layer is an oxide or oxynitride of a first metal, and the superconductive layer is a nitride of a different second metal.

9. 发明申请

WO2020236551A1 IN-SITU CURING OF COLOR CONVERSION LAYER IN RECESS 审中-公开
公开(公告)号：WO2020236551A1
公开(公告)日：2020-11-26
申请号：PCT/US2020/033054
申请日：2020-05-15
申请人： APPLIED MATERIALS, INC.
发明人： ZHANG, Daihua , LUO, Yingdong , ZHU, Mingwei , NG, Hou T. , GANAPATHIAPPAN, Sivapackia , PATIBANDLA, Nag B.
IPC分类号： H01L27/15 , H01L33/00 , H01L27/12 , H01L33/50
摘要： A method of fabricating a multi-color display includes dispensing a photocurable fluid over a display having an array of LEDs disposed below a cover layer. The cover has an outer surface with a plurality of recesses, and the photo-curable fluid fills the recesses. The photo-curable fluid includes a color conversion agent. A plurality of LEDs in the array are activated to illuminate and cure the photo-curable fluid to form a color conversion layer in the recesses over the activated LEDs. This layer will convert light from these LEDs to light of a first color. An uncured remainder of the photo-curable fluid is removed. Then the process is repeated with a different photo-curable fluid having a different color conversion agent and a different plurality of LEDs. This forms a second color conversion layer in different plurality of recesses to convert light from these LEDs to light of a second color.

10. 发明申请

WO2020149916A1 OPTICAL STACK DEPOSITION AND ON-BOARD METROLOGY 审中-公开
公开(公告)号：WO2020149916A1
公开(公告)日：2020-07-23
申请号：PCT/US2019/058712
申请日：2019-10-30
申请人： APPLIED MATERIALS, INC.
发明人： ZHU, Mingwei , YANG, Zihao , PATIBANDLA, Nag B. , DIEHL, Daniel , CAO, Yong , ZENG, Weimin , ZHENG, Renjing , BUDIARTO, Edward , GURUSAMY, Surender Kumar , EGAN, Todd , KHASGIWALE, Niranjan R.
IPC分类号： H01L21/67 , H01L21/768 , H01L21/66
摘要： A method and apparatus for forming an optical stack having uniform and accurate layers is provided. A processing tool used to form the optical stack comprises, within an enclosed environment, a first transfer chamber, an on-board metrology unit, and a second transfer chamber. A first plurality of processing chambers is coupled to the first transfer chamber or the second transfer chamber. The on-board metrology unit is disposed between the first transfer chamber and the second transfer chamber. The on-board metrology unit is configured to measure one or more optical properties of the individual layers of the optical stack without exposing the layers to an ambient environment.

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