专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2012024033A2 SHOWERHEAD ASSEMBLY WITH GAS INJECTION DISTRIBUTION DEVICES 审中-公开
标题翻译：带喷气分配装置的喷头组件
公开(公告)号：WO2012024033A2
公开(公告)日：2012-02-23
申请号：PCT/US2011/043577
申请日：2011-07-11
申请人： APPLIED MATERIALS, INC. , TAM, Alexander , CHANG, Anzhong , ACHARYA, Sumedh , OLGADO, Donald, J.K.
发明人： TAM, Alexander , CHANG, Anzhong , ACHARYA, Sumedh , OLGADO, Donald, J.K.
IPC分类号： H01L21/205
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/45576
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. The apparatus includes a showerhead assembly with separate inlets and manifolds for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. The showerhead includes a plurality of gas distribution devices disposed within a plurality of gas inlets for injecting one of the processing gases into and distributing it across a manifold for uniform delivery into the processing volume of the chamber. Each of the gas distribution devices preferably has a nozzle configured to evenly distribute the processing gas flowing therethrough while minimizing recirculation of the processing gas within the manifold. As a result, improved deposition uniformity is achieved on a plurality of substrates positioned in the processing volume of the processing chamber.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和设备。该设备包括具有分开的入口和歧管的喷头组件，用于将分开的处理气体输送到腔室的处理容积中，而不会在进入处理容积之前混合气体。喷头包括多个气体分配装置，这些气体分配装置设置在多个气体入口内，用于将处理气体之一喷射到歧管中并将其分配到歧管上，以均匀地输送到腔室的处理容积中。每个气体分配装置优选地具有喷嘴，该喷嘴被配置为均匀地分配流过其中的处理气体，同时最小化歧管内的处理气体的再循环。结果，在位于处理室的处理空间中的多个基板上实现了改善的沉积均匀性。

2. 发明申请

WO2011159690A3 MULTIPLE PRECURSOR SHOWERHEAD WITH BY-PASS PORTS 审中-公开
公开(公告)号：WO2011159690A3
公开(公告)日：2011-12-22
申请号：PCT/US2011/040335
申请日：2011-06-14
申请人： APPLIED MATERIALS, INC. , TAM, Alexander , CHANG, Anzhong , ACHARYA, Sumedh
发明人： TAM, Alexander , CHANG, Anzhong , ACHARYA, Sumedh
IPC分类号： H01L21/205
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, the apparatus a processing chamber that includes a showerhead with separate inlets and channels for delivering separate processing gases into a processing volume of the chamber without mixing the gases prior to entering the processing volume. In one embodiment, the showerhead includes one or more cleaning gas conduits configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. In one embodiment, the showerhead includes a plurality of metrology ports configured to deliver a cleaning gas directly into the processing volume of the chamber while by-passing the processing gas channels. As a result, the processing chamber components can be cleaned more efficiently and effectively than by introducing cleaning gas into the chamber only through the processing gas channels.

3. 发明申请

WO2011159615A2 METHOD AND APPARATUS FOR INDUCING TURBULENT FLOW OF A PROCESSING CHAMBER CLEANING GAS 审中-公开
标题翻译：用于诱导加工室清洁气体的涡流的方法和装置
公开(公告)号：WO2011159615A2
公开(公告)日：2011-12-22
申请号：PCT/US2011/040197
申请日：2011-06-13
申请人： APPLIED MATERIALS, INC. , CHUNG, Hua , DONG, Xizi , MAUNG, Kyawwin , HANAWA, Hiroji , KANG, Sang Won , QUACH, David H. , OLGADO, Donald J.K. , BOUR, David , HSU, Wei-Yung , TAM, Alexander , CHANG, Anzhong , ACHARYA, Sumedh
发明人： CHUNG, Hua , DONG, Xizi , MAUNG, Kyawwin , HANAWA, Hiroji , KANG, Sang Won , QUACH, David H. , OLGADO, Donald J.K. , BOUR, David , HSU, Wei-Yung , TAM, Alexander , CHANG, Anzhong , ACHARYA, Sumedh
IPC分类号： H01L21/205 , H01L21/302
CPC分类号： B08B5/00 , C23C16/4405 , C23C16/45506 , C23C16/45591 , H01L21/02041 , H01L21/67115 , Y10S438/905
摘要： Embodiments of the invention generally relate to apparatus and methods for cleaning chamber components using a cleaning plate. The cleaning plate is adapted to be positioned on a substrate support during a cleaning process, and includes a plurality of turbulence-inducing structures. The turbulence-inducing structures induce a turbulent flow of cleaning gas while the cleaning plate is rotated during a cleaning process. The cleaning plate increases the retention time of the cleaning gas near the showerhead during cleaning. Additionally, the cleaning plate reduces concentration gradients within the cleaning plate to provide a more effective clean. The method includes positioning a cleaning plate adjacent to a showerhead, and introducing cleaning gas to the space between the showerhead and the cleaning plate. A material deposited on the surface of the showerhead is then heated and vaporized in the presence of the cleaning gas, and then exhausted from the processing chamber.
摘要翻译：本发明的实施例一般涉及使用清洁板清洁腔室部件的装置和方法。清洁板适于在清洁过程期间定位在基板支撑件上，并且包括多个湍流诱导结构。湍流诱导结构在清洁过程中清洁板旋转时引起清洁气体的湍流。在清洁过程中，清洁板增加了喷头附近清洁气体的停留时间。此外，清洁板减少清洁板内的浓度梯度以提供更有效的清洁。该方法包括将清洁板定位在与喷头相邻的位置，并将清洁气体引入到喷头和清洁板之间的空间。然后将沉积在喷头表面上的材料在清洁气体的存在下加热和蒸发，然后从处理室中排出。

4. 发明申请

WO2009052213A1 MULTI-GAS SPIRAL CHANNEL SHOWERHEAD 审中-公开
标题翻译：多气体螺旋通道淋浴
公开(公告)号：WO2009052213A1
公开(公告)日：2009-04-23
申请号：PCT/US2008/080044
申请日：2008-10-15
申请人： APPLIED MATERIALS, INC. , TAM, Alexander , GRAYSON, Jacob , ACHARYA, Sumedh
发明人： TAM, Alexander , GRAYSON, Jacob , ACHARYA, Sumedh
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45565
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of spiral channels which isolate the precursor gases. The precursor gases are injected into a mixing channel where the gases are mixed before entering a processing volume containing the substrates.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。将III族前体，例如三甲基镓，三甲基铝或三甲基铟以及含氮前体，例如氨，被输送到多个分离前体气体的螺旋通道。将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。

5. 发明申请

WO2009002356A1 HVPE SHOWERHEAD DESIGN 审中-公开
标题翻译： HVPE淋浴设计
公开(公告)号：WO2009002356A1
公开(公告)日：2008-12-31
申请号：PCT/US2007/082147
申请日：2007-10-22
申请人： APPLIED MATERIALS, INC. , MELNIK, Yuriy , BURROWS, Brian H. , TAM, Alexander , STEVENS, Ronald , GRAYSON, Jacob , CHOI, Kenric T. , ACHARYA, Sumedh , NIJHAWAN, Sandeep , KRYLIOUK, Olga
发明人： BURROWS, Brian H. , TAM, Alexander , STEVENS, Ronald , GRAYSON, Jacob , CHOI, Kenric T. , ACHARYA, Sumedh , NIJHAWAN, Sandeep , KRYLIOUK, Olga
IPC分类号： H01L21/336
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T117/10
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布在努力分离含金属的前体气体和含氮前体气体直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

6. 发明申请

WO2011017501A2 CVD APPARATUS 审中-公开
标题翻译： CVD装置
公开(公告)号：WO2011017501A2
公开(公告)日：2011-02-10
申请号：PCT/US2010/044521
申请日：2010-08-05
申请人： APPLIED MATERIALS, INC. , BURROWS, Brian H. , STEVENS, Ronald , GRAYSON, Jacob , PODESTA, Joshua J. , NIJHAWAN, Sandeep , WASHINGTON, Lori D. , TAM, Alexander , ACHARYA, Sumedh
发明人： BURROWS, Brian H. , STEVENS, Ronald , GRAYSON, Jacob , PODESTA, Joshua J. , NIJHAWAN, Sandeep , WASHINGTON, Lori D. , TAM, Alexander , ACHARYA, Sumedh
IPC分类号： H01L21/683 , H01L21/205
CPC分类号： H01L21/67115 , C23C16/4412 , C23C16/4584 , C23C16/481 , H01L21/68742 , H01L21/68792
摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.
摘要翻译：本发明的实施方案一般涉及用于基板上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积的处理室和组件。该装置包括限定过程体积的室主体。第一平面中的喷头定义了处理体积的顶部。载体板在第二平面中延伸过程体积，形成喷头和基座板之间的上部处理体积。在第三平面中的透明材料限定了工艺体积的底部，从而在承载板和透明材料之间形成较低的工艺体积。多个灯形成位于透明材料下方的一个或多个区域。该装置提供均匀的前体流动和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量增加。

7. 发明申请

WO2009099720A1 CVD APPARATUS 审中-公开
标题翻译： CVD装置
公开(公告)号：WO2009099720A1
公开(公告)日：2009-08-13
申请号：PCT/US2009/030858
申请日：2009-01-13
申请人： APPLIED MATERIALS, INC. , BURROWS, Brian H. , STEVENS, Ronald , GRAYSON, Jacob , PODESTA, Joshua J. , NIJHAWAN, Sandeep , WASHINGTON, Lori D. , TAM, Alexander , ACHARYA, Sumedh
发明人： BURROWS, Brian H. , STEVENS, Ronald , GRAYSON, Jacob , PODESTA, Joshua J. , NIJHAWAN, Sandeep , WASHINGTON, Lori D. , TAM, Alexander , ACHARYA, Sumedh
IPC分类号： H01L21/205
CPC分类号： C23C16/452 , C23C16/481 , C23C16/52 , H01L21/67248 , H01L21/68764 , H01L21/68771
摘要： Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.
摘要翻译：本发明的实施方案一般涉及用于衬底上的化学气相沉积（CVD）的方法和装置，特别涉及用于金属有机化学气相沉积中的处理室和组件。该装置包括限定处理量的室主体。第一平面中的喷头定义了处理量的顶部。载体板在第二平面中延伸过程体积，形成在喷头和基座板之间的上过程体积。在第三平面中的透明材料限定了处理体积的底部，其在承载板和透明材料之间形成较低的处理体积。多个灯形成位于透明材料下方的一个或多个区域。该设备提供均匀的前体流和混合，同时在较大的底物上保持均匀的温度，从而产生相应的生产量的增加。

8. 发明申请

WO2009052212A1 MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD 审中-公开
标题翻译：多通道直通通道
公开(公告)号：WO2009052212A1
公开(公告)日：2009-04-23
申请号：PCT/US2008/080043
申请日：2008-10-15
申请人： APPLIED MATERIALS, INC. , BURROWS, Brian H. , TAM, Alexander , STEVENS, Ronald , CHOI, Kenric T. , FELSCH, James D. , GRAYSON, Jacob , ACHARYA, Sumedh , NIJHAWAN, Sandeep , WASHINGTON, Lori D. , MYO, Nyi O.
发明人： BURROWS, Brian H. , TAM, Alexander , STEVENS, Ronald , CHOI, Kenric T. , FELSCH, James D. , GRAYSON, Jacob , ACHARYA, Sumedh , NIJHAWAN, Sandeep , WASHINGTON, Lori D. , MYO, Nyi O.
IPC分类号： C23C16/00
CPC分类号： C23C16/45565 , C23C16/45514 , C23C16/45519 , C23C16/45574 , C23C16/45578 , C30B25/14 , C30B29/403 , Y10T137/0318 , Y10T137/87153
摘要： A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
摘要翻译：提供了可用于化学气相沉积和/或氢化物气相外延（HVPE）沉积的方法和装置。在一个实施例中，使用金属有机化学气相沉积（MOCVD）工艺在多个基板上沉积III族氮化物膜。将III族前体，例如三甲基镓，三甲基铝或三甲基铟，以及含氮前体，例如氨，被输送到多个直接通道，其分离前体气体。将前体气体注入到混合通道中，在混合通道中气体被混合，然后进入含有底物的处理体积。提供热交换通道用于混合通道的温度控制，以防止不希望的前体的冷凝和反应。

9. 发明申请

WO2009055245A1 SHOWERHEAD DESIGN WITH PRECURSOR PRE-MIXING 审中-公开
标题翻译：具有前置预混装置的淋浴设计
公开(公告)号：WO2009055245A1
公开(公告)日：2009-04-30
申请号：PCT/US2008/079168
申请日：2008-10-08
申请人： APPLIED MATERIALS, INC. , BURROWS, Brian H. , KRYLIOUK, Olga , MELNIK, Yuriy , GRAYSON, Jacob , NIJHAWAN, Sandeep , STEVENS, Ronald , ACHARYA, Sumedh
发明人： BURROWS, Brian H. , KRYLIOUK, Olga , MELNIK, Yuriy , GRAYSON, Jacob , NIJHAWAN, Sandeep , STEVENS, Ronald , ACHARYA, Sumedh
IPC分类号： H01L21/36
CPC分类号： C23C16/4488 , C23C16/45502 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45574 , C23C16/45578 , C30B25/02 , C30B25/14 , C30B29/403 , G05D23/22 , G05D23/27
摘要： A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.
摘要翻译：提供了可用于沉积工艺的方法和装置，例如金属氮化物膜的氢化物气相外延（HVPE）沉积。第一组通道可以引入含金属的前体气体。第二组通道可以提供含氮前体气体。第一组和第二组通道可以散布，以分离含金属的前体气体和含氮前体气体，直到它们到达基底。惰性气体也可以通过通道向下流动，以帮助保持分离并限制通道处或附近的反应，从而防止通道上的不希望的沉积。

10. 发明申请

WO2020126041A1 VAPOR DEPOSITION APPARATUS AND METHOD FOR COATING A SUBSTRATE IN A VACUUM CHAMBER 审中-公开
公开(公告)号：WO2020126041A1
公开(公告)日：2020-06-25
申请号：PCT/EP2018/086640
申请日：2018-12-21
申请人： APPLIED MATERIALS, INC. , LOPP, Andreas , BANGERT, Stefan , ISHIKAWA, David , UPADHYE, Bahubali S. , ACHARYA, Sumedh , SIVARAMAKRISHNAN, Visweswaren
发明人： LOPP, Andreas , BANGERT, Stefan , ISHIKAWA, David , UPADHYE, Bahubali S. , ACHARYA, Sumedh , SIVARAMAKRISHNAN, Visweswaren
IPC分类号： C23C14/06 , C23C14/14 , C23C14/24 , C23C14/56 , C23C16/44
摘要： A vapor deposition apparatus is described. The vapor deposition apparatus includes a vacuum chamber having chamber walls; a temperature controlled shield configured to shield the chamber walls; a heat shield facing a substrate to be coated, the heat shield having one or more openings; and an evaporator at least partially within the vacuum chamber, the evaporator comprising: one or more nozzles extending through the one or more openings.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式