专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2013059102A1 MULTIPLE COMPLEMENTARY GAS DISTRIBUTION ASSEMBLIES 审中-公开
标题翻译：多个补充气体分配组件
公开(公告)号：WO2013059102A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/060104
申请日：2012-10-12
申请人： APPLIED MATERIALS, INC. , NG, Tuoh-Bin , MELNIK, Yuriy , PANG, Lily , TUNCEL, Eda , CHEN, Lu , NGUYEN, Son T.
发明人： NG, Tuoh-Bin , MELNIK, Yuriy , PANG, Lily , TUNCEL, Eda , CHEN, Lu , NGUYEN, Son T.
IPC分类号： H01L21/205
CPC分类号： C23C16/303 , C23C16/4488 , C23C16/45574 , C23C16/4558 , Y10T137/0318 , Y10T137/8593
摘要： Described herein are exemplary apparatuses having multiple gas distribution assemblies in accordance with one embodiment. In one embodiment, the apparatus includes two or more gas distribution assemblies. Each gas distribution assembly has orifices through which at least one process gas is introduced into a processing chamber. The two or more gas distribution assemblies may be designed to have complementary characteristic radial film growth rate profiles.
摘要翻译：这里描述的是具有根据一个实施例的多个气体分配组件的示例性装置。在一个实施例中，该装置包括两个或更多个气体分配组件。每个气体分配组件具有孔，至少一个处理气体通过该孔被引入处理室。两个或更多个气体分配组件可被设计成具有互补的特征径向膜生长速率曲线。

2. 发明申请

WO2010036999A2 SUBSTRATE PROCESSING CHAMBER WITH OFF-CENTER GAS DELIVERY FUNNEL 审中-公开
标题翻译：具有离心式气体输送功能的基板处理室
公开(公告)号：WO2010036999A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/058557
申请日：2009-09-28
申请人： APPLIED MATERIALS, INC. , MERRY, Nir , NGUYEN, Son T.
发明人： MERRY, Nir , NGUYEN, Son T.
IPC分类号： H01L21/205 , H01L21/00
CPC分类号： C23C16/45544 , C23C16/45502 , C23C16/45563
摘要： Methods and apparatus for processing substrates are disclosed herein. The process chamber includes a chamber body, a substrate support pedestal, a pump port and a gas injection funnel. The chamber body has an inner volume and the substrate support pedestal is disposed in the inner volume of the chamber body. The pump port is coupled to the inner volume and is disposed off-center from a central axis of the substrate support pedestal. The pump port provides azimuthally non-uniform pumping proximate to a surface of the substrate support pedestal and creates localized regions of high pressure and low pressure within the inner volume during use. The gas injection funnel is disposed in a ceiling of the chamber body and opposite the substrate support pedestal. The gas injection funnel is offset from the central axis of the substrate support pedestal and is disposed in a region of low pressure.
摘要翻译：本文公开了用于处理基板的方法和设备。处理腔室包括腔室主体，基板支撑基座，泵端口和气体注入漏斗。腔室主体具有内部容积，并且基板支撑基座设置在腔室主体的内部容积中。泵端口联接到内部容积并且被设置成偏离基板支撑基座的中心轴线的中心。泵端口在靠近衬底支撑基座的表面处提供方位角不均匀的泵送并且在使用期间在内部容积内产生局部高压和低压的区域。气体注入漏斗设置在腔室主体的顶部并且与基板支撑基座相对。气体注入漏斗从衬底支撑基座的中心轴线偏移并设置在低压区域中。

3. 发明申请

WO2009085808A2 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING INDUCTIVELY COUPLED PLASMA TECHNOLOGY 审中-公开
标题翻译：使用电感耦合等离子体技术处理基板的装置和方法
公开(公告)号：WO2009085808A2
公开(公告)日：2009-07-09
申请号：PCT/US2008/087134
申请日：2008-12-17
申请人： APPLIED MATERIALS, INC. , SWENBERG, Johanes S. , LIU, Wei , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A. , MARK, Michael J. , GUARINI, Theresa Kramer , CHOI, Woong
发明人： SWENBERG, Johanes S. , LIU, Wei , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A. , MARK, Michael J. , GUARINI, Theresa Kramer , CHOI, Woong
IPC分类号： H05H1/34 , H01L21/30
CPC分类号： H01L21/28202 , H01J37/321 , H01J37/3244
摘要： The present invention generally provides apparatus and methods for processing a semiconductor substrate. Particularly, the present invention provides an inductively coupled plasma reactor having improved process uniformity. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a process volume configured to process the substrate therein, an adjustable coil assembly coupled to the chamber body outside the process volume, a supporting pedestal disposed in the process volume and configured to support the substrate therein, and a gas injection assembly configured to supply a process gas towards a first process zone and a second process zone independently.
摘要翻译：本发明通常提供了用于处理半导体衬底的装置和方法。特别地，本发明提供了具有改进的工艺均匀性的电感耦合等离子体反应器。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定被配置为在其中处理衬底的处理体积的室主体，耦合到处理体积外部的室主体的可调节线圈组件，设置在处理体积中的支撑座并且被配置为在其中支撑衬底;以及气体注入组件，其构造成独立地朝向第一处理区域和第二处理区域提供处理气体。

4. 发明申请

WO2013006407A1 ELECTROSTATIC CHUCK ASSEMBLY 审中-公开
标题翻译：静电块组件
公开(公告)号：WO2013006407A1
公开(公告)日：2013-01-10
申请号：PCT/US2012/044838
申请日：2012-06-29
申请人： APPLIED MATERIALS, INC. , HWANG, Bernard L. , MARIN, Jose Antonio , NGUYEN, Son T.
发明人： HWANG, Bernard L. , MARIN, Jose Antonio , NGUYEN, Son T.
IPC分类号： H01L21/683 , B23Q3/15 , H02N13/00
CPC分类号： H01L21/6833 , H01L21/68785 , Y10T279/23
摘要： Embodiments of electrostatic chucks for substrate processing are provided herein. In some embodiments, an electrostatic chuck may include a puck for supporting a substrate, the puck formed from a dielectric material and having a chucking electrode disposed within the puck proximate a support surface of the puck to electrostatically retain the substrate when disposed on the puck; a base having a ring extending from the base to support the puck; and a spacer disposed between the base and the puck to support the puck above the base such that a gap is formed between the puck and the base, wherein the spacer supports the puck proximate a peripheral edge of the puck.
摘要翻译：本文提供了用于基板处理的静电卡盘的实施例。在一些实施例中，静电卡盘可以包括用于支撑基底的圆盘，所述圆盘由电介质材料形成，并且具有设置在靠近所述圆盘的支撑表面的所述圆盘内的夹持电极，以在设置在所述圆盘上时静电地保持所述基板; 具有从所述基部延伸以支撑所述圆盘的环的基部; 以及间隔件，其设置在所述基部和所述圆盘之间，以将所述圆盘支撑在所述基座上方，使得在所述圆盘和所述基座之间形成间隙，其中所述间隔件支撑靠近所述圆盘的周边边缘的所述圆盘。

5. 发明申请

WO2009085810A1 DUAL ZONE GAS INJECTION NOZZLE 审中-公开
标题翻译：双区气体喷射喷嘴
公开(公告)号：WO2009085810A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/087139
申请日：2008-12-17
申请人： APPLIED MATERIALS, INC. , LIU, Wei , SWENBERG, Johanes S. , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A.
发明人： LIU, Wei , SWENBERG, Johanes S. , NGUYEN, Hanh D. , NGUYEN, Son T. , CURTIS, Roger , BOTTINI, Philip A.
IPC分类号： H01L21/02
CPC分类号： H01J37/3244 , H01J37/32449
摘要： The present invention generally provides apparatus and method for processing a substrate. Particularly, the present invention provides apparatus and methods to obtain a desired distribution of a process gas. One embodiment of the present invention provides an apparatus for processing a substrate comprising an injection nozzle having a first fluid path including a first inlet configured to receive a fluid input, and a plurality of first injection ports connected with the first inlet, wherein the plurality of first injection ports are configured to direct a fluid from the first inlet towards a first region of a process volume, and a second fluid path including a second inlet configured to receive a fluid input, and a plurality of second injection ports connected with the second inlet, wherein the second injection ports are configured to direct a fluid from the second inlet towards a second region of the process volume.
摘要翻译：本发明总体上提供了用于处理衬底的装置和方法。特别地，本发明提供了获得处理气体的期望分布的装置和方法。本发明的一个实施例提供一种用于处理衬底的装置，其包括具有第一流体路径的注射喷嘴，所述第一流体路径包括构造成接收流体输入的第一入口和与第一入口连接的多个第一注入口，其中，第一注入口构造成将流体从第一入口引向处理容积的第一区域，并且第二流体路径包括构造成接收流体输入的第二入口和与第二入口连接的多个第二注入口，其中所述第二注射端口被配置为将流体从所述第二入口引导到所述处理体积的第二区域。

6. 发明申请

WO2008028082A2 PRECURSORS AND HARDWARE FOR CVD AND ALD 审中-公开
标题翻译： CVD和ALD的前兆和硬件
公开(公告)号：WO2008028082A2
公开(公告)日：2008-03-06
申请号：PCT/US2007/077301
申请日：2007-08-30
申请人： APPLIED MATERIALS, INC. , KHER, Shreyas S. , NGUYEN, Son T. , NARWANKAR, Pravin K. , TANDON, Sanjeev , JUMPER, Steve , SERMONA, Vincent
发明人： KHER, Shreyas S. , NGUYEN, Son T. , NARWANKAR, Pravin K. , TANDON, Sanjeev , JUMPER, Steve , SERMONA, Vincent
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/405 , C23C16/45544 , C23C16/45553 , C23C16/45561 , C23C16/45582
摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
摘要翻译：本发明通常包括用于沉积高k电介质或金属栅极材料的装置，其中可以使用有毒的，易燃的或发火的前体。排气管可以放置在液体前体或固体前体输送柜，气体面板和水蒸气发生器区域上。排气管道允许技术人员访问设备，而不会过度暴露于可能在液体输送柜，气体面板和水蒸气发生器区域内收集的有毒，自燃或可燃气体。

7. 发明申请

WO2010025366A3 METHOD FOR FORMING ALLYLIC ALCOHOLS 审中-公开
公开(公告)号：WO2010025366A3
公开(公告)日：2010-03-04
申请号：PCT/US2009/055363
申请日：2009-08-28
申请人： THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS , DENMARK, Scott E. , MILICEVIC, Selena , NGUYEN, Son T.
发明人： DENMARK, Scott E. , MILICEVIC, Selena , NGUYEN, Son T.
IPC分类号： C07C29/14 , C07C33/20 , C07C215/30 , C07D307/36 , B01J31/28
摘要： A method of performing a chemical reaction includes reacting an allyl donor and a substrate in a reaction mixture, and forming a homoallylic alcohol in the reaction mixture. The substrate may be an aldehyde or a hemiacetal. The reaction mixture includes a ruthenium catalyst, carbon monoxide at a level of at least 1 equivalent relative to the substrate, and water at a level of at least 1 equivalent relative to the substrate, and an amine at a level of from 0 to 0.5 equivalent relative to the substrate. The reaction mixture may also include a halide, and the equivalents of the amine may be similar to those of the halide. The reacting includes maintaining the reaction mixture at a temperature of at least 40°C. The method may be catalytic in metal, environmentally benign, amenable to large-scale applications, and applicable to a wide range of substrates.

8. 发明申请

WO2023278183A1 SEMICONDUCTOR PROCESSING CHAMBER ADAPTER 审中-公开
公开(公告)号：WO2023278183A1
公开(公告)日：2023-01-05
申请号：PCT/US2022/034059
申请日：2022-06-17
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Son T. , SCHATZ, Kenneth D. , NGUYEN, Anh N. , JUNG, Soonwook , PAKULSKI, Ryan , WANG, Anchuan , LI, Zihui
IPC分类号： H01J37/32 , H01J37/32082 , H01J37/32357 , H01L21/67069
摘要： Exemplary semiconductor processing systems may include a processing chamber. The systems may include a remote plasma unit coupled with the processing chamber. The systems may include an adapter coupled between the remote plasma unit and the processing chamber. The adapter may be characterized by a first end and a second end opposite the first end. The remote plasma unit may be coupled with the adapter at the first end. The adapter may define a first central channel extending more than 50% of a length of the adapter from the first end of the adapter. The adapter may define a second central channel extending less than 50% of the length of the adapter from the second end of the adapter. The adapter may define a transition between the first central channel and the second central channel.

9. 发明申请

WO2016018727A1 WAFER CARRIER WITH INDEPENDENT ISOLATED HEATER ZONES 审中-公开
标题翻译：带独立隔离加热器区域的拖车
公开(公告)号：WO2016018727A1
公开(公告)日：2016-02-04
申请号：PCT/US2015/041852
申请日：2015-07-23
申请人： APPLIED MATERIALS, INC.
发明人： LUBOMIRSKY, Dmitry , NGUYEN, Son T. , NGUYEN, Anh N. , PALAGASHVILI, David
IPC分类号： H01L21/324 , H01L21/683
CPC分类号： H01J37/32724 , H01J37/32082 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/68785
摘要： A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.
摘要翻译：用独立的隔离加热器区域描述晶片载体。在一个示例中，载体具有用于承载用于制造工艺的工件的圆盘，具有多个热耦合到圆盘的热隔离块的加热器板，并且每个具有用于加热加热器板的相应块的加热器，冷却板固定并加热耦合到加热板，冷却板具有一个冷却通道，用于承载传热流体以从冷却板传递热量。

10. 发明申请

WO2014137532A1 CHAMBER COMPONENT WITH PROTECTIVE COATING SUITABLE FOR PROTECTION AGAINST FLUORINE PLASMA 审中-公开
标题翻译：具有适用于防止氟等离子体的保护涂料的室内部件
公开(公告)号：WO2014137532A1
公开(公告)日：2014-09-12
申请号：PCT/US2014/015153
申请日：2014-02-06
申请人： APPLIED MATERIALS, INC.
发明人： NGUYEN, Son T. , FONG, Michael
IPC分类号： H01L21/3065
CPC分类号： C23C16/34 , C23C16/40 , C23C16/4404 , C23C16/4405 , C23C16/50
摘要： Embodiments described herein relate to a protective coating that protects an underlying chamber component from corrosion or deterioration within a corrosive environment. The chamber component has a surface comprising a ceramic material. A coating disposed on the surface comprises magnesium oxide, lanthanum oxide, or lanthanum fluoride.
摘要翻译：本文所述的实施方案涉及保护下层室组件免受腐蚀环境中的腐蚀或劣化的保护涂层。腔室部件具有包括陶瓷材料的表面。设置在表面上的涂层包括氧化镁，氧化镧或氟化镧。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式