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1. 发明申请

WO2008028082A3 PRECURSORS AND HARDWARE FOR CVD AND ALD 审中-公开
标题翻译： CVD和ALD的前体和硬件
公开(公告)号：WO2008028082A3
公开(公告)日：2008-04-24
申请号：PCT/US2007077301
申请日：2007-08-30
申请人： APPLIED MATERIALS INC , KHER SHREYAS S , NGUYEN SON T , NARWANKAR PRAVIN K , TANDON SANJEEV , JUMPER STEVE , SERMONA VINCENT
发明人： KHER SHREYAS S , NGUYEN SON T , NARWANKAR PRAVIN K , TANDON SANJEEV , JUMPER STEVE , SERMONA VINCENT
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/405 , C23C16/45544 , C23C16/45553 , C23C16/45561 , C23C16/45582
摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
摘要翻译：本发明一般包括用于沉积高k电介质或金属栅极材料的装置，其中可使用有毒，易燃或发火前体。排气管道可以放置在液体前驱体或固体前驱体输送柜，气体面板和水蒸气发生器区域。排气管允许技术人员进入设备，而不会过度暴露于可能收集在液体输送柜，气体板和水蒸气发生器区域内的有毒，易燃或易燃气体。

2. 发明申请

WO2012148802A3 CHEMICAL DELIVERY SYSTEM 审中-公开
标题翻译：化学输送系统
公开(公告)号：WO2012148802A3
公开(公告)日：2013-03-21
申请号：PCT/US2012034375
申请日：2012-04-20
申请人： APPLIED MATERIALS INC , JOSEPHSON MARCEL E , CARLSON DAVID K , JUMPER STEVE , SANCHEZ ERROL ANTONIO C
发明人： JOSEPHSON MARCEL E , CARLSON DAVID K , JUMPER STEVE , SANCHEZ ERROL ANTONIO C
IPC分类号： H01L21/02
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译：本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室，其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。

3. 发明申请

WO2008028082A2 PRECURSORS AND HARDWARE FOR CVD AND ALD 审中-公开
标题翻译： CVD和ALD的前兆和硬件
公开(公告)号：WO2008028082A2
公开(公告)日：2008-03-06
申请号：PCT/US2007/077301
申请日：2007-08-30
申请人： APPLIED MATERIALS, INC. , KHER, Shreyas S. , NGUYEN, Son T. , NARWANKAR, Pravin K. , TANDON, Sanjeev , JUMPER, Steve , SERMONA, Vincent
发明人： KHER, Shreyas S. , NGUYEN, Son T. , NARWANKAR, Pravin K. , TANDON, Sanjeev , JUMPER, Steve , SERMONA, Vincent
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/405 , C23C16/45544 , C23C16/45553 , C23C16/45561 , C23C16/45582
摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
摘要翻译：本发明通常包括用于沉积高k电介质或金属栅极材料的装置，其中可以使用有毒的，易燃的或发火的前体。排气管可以放置在液体前体或固体前体输送柜，气体面板和水蒸气发生器区域上。排气管道允许技术人员访问设备，而不会过度暴露于可能在液体输送柜，气体面板和水蒸气发生器区域内收集的有毒，自燃或可燃气体。

4. 发明申请

WO2012145492A3 APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上沉积材料的装置
公开(公告)号：WO2012145492A3
公开(公告)日：2013-01-17
申请号：PCT/US2012034222
申请日：2012-04-19
申请人： APPLIED MATERIALS INC , SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O , CARLSON DAVID K , BAUTISTA KEVIN , DINIZ HERMAN P , PATALAY KAILASH , MYO NYI O , DEMARS DENNIS L , MARCADAL CHRISTOPHE , JUMPER STEVE , KUPPURAO SATHEESH
发明人： SANCHEZ ERROL ANTONIO C , COLLINS RICHARD O , CARLSON DAVID K , BAUTISTA KEVIN , DINIZ HERMAN P , PATALAY KAILASH , MYO NYI O , DEMARS DENNIS L , MARCADAL CHRISTOPHE , JUMPER STEVE , KUPPURAO SATHEESH
IPC分类号： H01L21/205
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了在衬底上沉积材料的方法和装置。在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径，第一处理气体和第二流动路径以提供独立于第一处理气体的第二处理气体，其中喷射器被定位成提供穿过基板的处理表面的第一和第二处理气体，设置在基板支撑件上方的喷头将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。

5. 发明申请

WO2012148802A2 CHEMICAL DELIVERY SYSTEM 审中-公开
标题翻译：化学输送系统
公开(公告)号：WO2012148802A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/034375
申请日：2012-04-20
申请人： APPLIED MATERIALS, INC. , JOSEPHSON, Marcel E. , CARLSON, David K. , JUMPER, Steve , SANCHEZ, Errol Antonio C.
发明人： JOSEPHSON, Marcel E. , CARLSON, David K. , JUMPER, Steve , SANCHEZ, Errol Antonio C.
IPC分类号： H01L21/02
CPC分类号： G05D7/0641 , Y10T137/4259 , Y10T137/6416 , Y10T137/7043 , Y10T137/8593
摘要： Embodiments of chemical delivery systems disclosed herein may include an enclosure; a first compartment disposed within the enclosure and having a plurality of first conduits to carry a first set of chemical species, the first compartment further having a first draw opening and a first exhaust opening to facilitate flow of a purge gas through the first compartment; and a second compartment disposed within the enclosure and having a plurality of second conduits to carry a second set of chemical species, the second compartment further having a second draw opening and a second exhaust opening to facilitate flow of the purge gas through the second compartment, wherein the first set of chemical species is different than the second set of chemical species, and wherein a draw velocity of the purge gas through the second compartment is higher than the draw velocity of the purge gas through the first compartment.
摘要翻译：本文公开的化学品递送系统的实施例可以包括外壳; 设置在所述外壳内并具有多个第一导管以承载第一组化学物质的第一隔室，所述第一隔室还具有第一抽吸开口和第一排气口，以促进吹扫气体流过所述第一隔室; 以及设置在所述外壳内并且具有多个第二导管以携带第二组化学物质的第二隔室，所述第二隔室还具有第二牵引开口和第二排气口，以促进所述吹扫气体流过所述第二隔室，其中所述第一组化学物质不同于所述第二组化学物质，并且其中通过所述第二隔室的吹扫气体的抽吸速度高于通过所述第一隔室的吹扫气体的抽吸速度。

6. 发明申请

WO2012145492A2 APPARATUS FOR DEPOSITION OF MATERIALS ON A SUBSTRATE 审中-公开
标题翻译：用于在基材上沉积材料的装置
公开(公告)号：WO2012145492A2
公开(公告)日：2012-10-26
申请号：PCT/US2012/034222
申请日：2012-04-19
申请人： APPLIED MATERIALS, INC. , SANCHEZ, Errol Antonio C. , COLLINS, Richard O. , CARLSON, David K. , BAUTISTA, Kevin , DINIZ, Herman P. , PATALAY, Kailash , MYO, Nyi O. , DEMARS, Dennis L. , MARCADAL, Christophe , JUMPER, Steve , KUPPURAO, Satheesh
发明人： SANCHEZ, Errol Antonio C. , COLLINS, Richard O. , CARLSON, David K. , BAUTISTA, Kevin , DINIZ, Herman P. , PATALAY, Kailash , MYO, Nyi O. , DEMARS, Dennis L. , MARCADAL, Christophe , JUMPER, Steve , KUPPURAO, Satheesh
IPC分类号： H01L21/205
CPC分类号： C23C16/0236 , C23C16/301 , C23C16/4412 , C23C16/45563 , C23C16/45565 , C23C16/4584 , C23C16/46
摘要： Methods and apparatus for deposition of materials on a substrate are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having a substrate support disposed therein to support a processing surface of a substrate, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector is positioned to provide the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface of the substrate, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译：本文提供了在衬底上沉积材料的方法和装置。在一些实施例中，用于处理衬底的装置可以包括处理室，其具有设置在其中的衬底支撑件，以支撑衬底的处理表面，设置在衬底支撑件的第一侧上的注射器，并且具有第一流动路径，第一工艺气体和第二流动路径以提供独立于第一工艺气体的第二工艺气体，其中喷射器被定位成在衬底的处理表面上提供第一和第二工艺气体，设置在衬底支撑件上方的喷头将第一工艺气体提供到衬底的处理表面，以及设置在衬底支撑件的与注射器相对的第二侧的排气口，以从处理室排出第一和第二工艺气体。

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