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1. 发明申请

WO2013090581A1 MULTIPLE BEAM COMBINER FOR LASER PROCESSING APPARATUS 审中-公开
标题翻译：用于激光加工设备的多光束组合器
公开(公告)号：WO2013090581A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/069518
申请日：2012-12-13
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HOLMGREN, Douglas E. , HOWELLS, Samuel C. , TONG, Edric , ADAMS, Bruce E. , LI, Jiping , HUNTER, Aaron Muir
发明人： MOFFATT, Stephen , HOLMGREN, Douglas E. , HOWELLS, Samuel C. , TONG, Edric , ADAMS, Bruce E. , LI, Jiping , HUNTER, Aaron Muir
IPC分类号： H01L21/268 , H01L21/26
CPC分类号： G02B27/106 , G02B17/0888 , G02B27/0025 , G02B27/10 , G02B27/1006 , G02B27/12 , G02B27/123 , G02B27/126 , G02B27/14 , G02B27/143 , G02B27/30
摘要： Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.
摘要翻译：公开了用于组合放大辐射束的装置和方法。光束组合器具有准直光学器件，其被定位成以相对于准直光学器件的光轴的恒定入射角接收多个相干辐射束。在一些实施例中，相应的入射角也可以不同。准直光学元件具有使光束准直的光学特性。光学性质可以是折射或反射的，或其组合。还可以提供收集光学器件以将多个光束引导到准直光学元件。光束组合器可以用在热处理装置中，以将多于两个的相干放大辐射束（例如激光器）组合成单个光束。

2. 发明申请

WO2010036621A2 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS 审中-公开
标题翻译：使用OCTADECABORANE自补偿植入物进行无缺陷断层形成
公开(公告)号：WO2010036621A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/057708
申请日：2009-09-21
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , ADAMS, Bruce E. , MOFFITT, Theodore , MOFFATT, Stephen
发明人： LI, Jiping , HUNTER, Aaron Muir , ADAMS, Bruce E. , MOFFITT, Theodore , MOFFATT, Stephen
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01J37/32357 , H01J37/32412 , H01L21/26513 , H01L21/324
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
摘要翻译：一种用硼簇植入半导体衬底的方法和装置。通过等离子体浸渍或离子束注入，注入十八硼烷衬底。然后将衬底表面退火以完全解离并激活硼簇。退火可以通过熔化注入区域或通过亚熔融退火工艺进行。

3. 发明申请

WO2009023423A1 INCREASED NANOSECOND LASER PULSE-TO-PULSE ENERGY REPEATABILITY USING ACTIVE LASER PULSE ENERGY CONTROL 审中-公开
标题翻译：增加激光器激光脉冲能量可重复使用激光脉冲能量控制
公开(公告)号：WO2009023423A1
公开(公告)日：2009-02-19
申请号：PCT/US2008/071246
申请日：2008-07-25
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , THOMAS, Timothy N. , JENNINGS, Dean , ADAMS, Bruce E.
发明人： LI, Jiping , HUNTER, Aaron Muir , THOMAS, Timothy N. , JENNINGS, Dean , ADAMS, Bruce E.
IPC分类号： H01S3/10 , H01S3/101
CPC分类号： B23K26/0622 , H01L21/02686 , H01L21/2026
摘要： A method and apparatus for reducing the pulse-to-pulse laser energy variation (i.e., increasing the pulse-to-pulse laser energy repeatability) from a pulsed laser source are provided. In this manner, laser pulses impingent on a processing plane, such as the surface of a wafer or other substrate, may have substantially the same energy content leading to a more controlled process when compared to conventional processing. The method may be based on in-situ detection of the pulse energy level and the subsequent active adjustment of the transmitted laser pulse energy in a closed-loop control scheme. Furthermore, the active adjustment of the laser pulse energy may occur within a few nanoseconds after the original laser pulse is generated by a pulsed laser source.
摘要翻译：提供了一种用于从脉冲激光源减少脉冲对脉冲激光能量变化（即，增加脉冲到脉冲激光能量重复性）的方法和装置。以这种方式，与常规处理相比，照射在诸如晶片或其它基板的表面的处理平面上的激光脉冲可具有基本上相同的能量含量，导致更受控制的过程。该方法可以基于在闭环控制方案中脉冲能量水平的现场检测和随后的发射的激光脉冲能量的主动调节。此外，在通过脉冲激光源产生原始激光脉冲之后，激光脉冲能量的主动调节可能在几纳秒内发生。

4. 发明申请

WO2011034641A1 METHODS OF SOLID PHASE RECRYSTALLIZATION OF THIN FILM USING PULSE TRAIN ANNEALING METHOD 审中-公开
标题翻译：使用脉冲火焰退火方法的薄膜固相重组方法
公开(公告)号：WO2011034641A1
公开(公告)日：2011-03-24
申请号：PCT/US2010/035013
申请日：2010-05-14
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HUNTER, Aaron Muir , ADAMS, Bruce E.
发明人： MOFFATT, Stephen , HUNTER, Aaron Muir , ADAMS, Bruce E.
IPC分类号： H01L21/324 , H01L21/20
CPC分类号： H01L21/02686 , C30B13/24 , C30B29/06 , H01L21/02521
摘要： Embodiments of the present invention provide methods of solid phase recrystallization of thin film using a plurality of pulses of electromagnetic energy. In one embodiment, the methods of the present invention may be used to anneal an entire substrate surface or selected regions of a surface of a substrate by delivering a plurality of pluses of energy to a crystalline seed region or layer upon which an amorphous layer is deposited to recrystallize the amorphous layer so that it has the same grain structure and crystal orientation as that of the underlying crystalline seed region or layer.
摘要翻译：本发明的实施例提供使用多个电磁能脉冲进行薄膜固相重结晶的方法。在一个实施例中，本发明的方法可以用于通过将多个能量递送到沉积非晶层的结晶种子区域或层来退火整个衬底表面或衬底的表面的选定区域使非晶层重结晶，使其具有与下面的结晶种子区域或层相同的晶粒结构和晶体取向。

5. 发明申请

WO2010059300A2 PYROMETRY FOR SUBSTRATE PROCESSING 审中-公开
标题翻译：用于基板加工的色温
公开(公告)号：WO2010059300A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/059857
申请日：2009-10-07
申请人： APPLIED MATERIALS, INC. , PATALAY, Kailash Kiran , HUNTER, Aaron Muir , ADAMS, Bruce E.
发明人： PATALAY, Kailash Kiran , HUNTER, Aaron Muir , ADAMS, Bruce E.
IPC分类号： H01L21/00 , H01L21/02 , H01L21/324
CPC分类号： H01L21/67248
摘要： A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength.
摘要翻译：基板处理系统包括处理腔室，用于支撑设置在处理腔室内的基板的基座以及耦合到处理腔室的光学高温测定组件，以测量基本上源自一部分的发射光基座或基板。光学高温测定组件还包括光接收器和光学检测器。光学高温测定组件接收一部分发射光，并且基于至少一个波长附近的发射光部分的强度来确定衬底的温度。在处理期间测量基板的温度的方法包括在支撑基板或基座的基座的一部分附近布置光管，将光管的端部屏蔽以避免杂散光，从而使得光管的端部接收来自基座或基板的该部分，用气体吹扫光管的端部以减少光管端部的污染，检测从基座发射并由光管接收的一部分光，并且确定温度从基座或基板发出的光的至少一个波长附近的部分的强度确定基板的厚度。

6. 发明申请

WO2013033637A2 CRYSTALLIZATION METHODS 审中-公开
标题翻译：结晶方法
公开(公告)号：WO2013033637A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053527
申请日：2012-08-31
申请人： APPLIED MATERIALS, INC. , ADAMS, Bruce E. , HUNTER, Aaron Muir , MOFFAT, Stephan
发明人： ADAMS, Bruce E. , HUNTER, Aaron Muir , MOFFAT, Stephan
IPC分类号： H01L21/324
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。

7. 发明申请

WO2013052262A1 PARTICLE CONTROL IN LASER PROCESSING SYSTEMS 审中-公开
标题翻译：激光加工系统中的粒子控制
公开(公告)号：WO2013052262A1
公开(公告)日：2013-04-11
申请号：PCT/US2012/055581
申请日：2012-09-14
申请人： APPLIED MATERIALS, INC. , HUNTER, Aaron Muir , BEHDJAT, Mehran , ADAMS, Bruce E.
发明人： HUNTER, Aaron Muir , BEHDJAT, Mehran , ADAMS, Bruce E.
IPC分类号： H01L21/268 , H01L21/324
CPC分类号： B23K26/127 , B23K26/142 , B23K26/1464
摘要： The present invention generally relates to a laser processing systems for thermally processing substrates. The laser processing systems include a shield disposed between an energy source of the laser processing system and a substrate which is to be thermally processed. The shield includes an optically transparent window disposed adjacent to a cavity within the shield. The optically transparent window allows annealing energy to pass therethrough and to illuminate the substrate. The shield also includes one or more gas inlets and one or more gas outlets for introducing and removing a purge gas from the cavity within the shield. The purge gas is utilized to remove volatized or ablated components during thermal processing, and to provide a gas of predetermined composition, such as oxygen-free, to the thermally processed area.
摘要翻译：本发明一般涉及一种用于热处理衬底的激光加工系统。激光处理系统包括设置在激光加工系统的能量源和待热处理的基板之间的屏蔽。护罩包括邻近护罩内的空腔设置的光学透明窗口。光学透明窗口允许退火能量通过并照射基板。屏蔽还包括一个或多个气体入口和一个或多个气体出口，用于从罩内的空腔引入和去除净化气体。吹扫气体用于在热处理过程中除去挥发的或消融的组分，并且向热处理区域提供诸如无氧的预定组成的气体。

8. 发明申请

WO2013119975A1 SPIKE ANNEAL RESIDENCE TIME REDUCTION IN RAPID THERMAL PROCESSING CHAMBERS 审中-公开
标题翻译：快速热处理炉中SPIKE ANNEAL RESIDENCE TIME减少
公开(公告)号：WO2013119975A1
公开(公告)日：2013-08-15
申请号：PCT/US2013/025377
申请日：2013-02-08
申请人： APPLIED MATERIALS, INC. , LI, Jiping , KOELMEL, Blake , HUNTER, Aaron Muir , ADERHOLD, Wolfgang R.
发明人： LI, Jiping , KOELMEL, Blake , HUNTER, Aaron Muir , ADERHOLD, Wolfgang R.
IPC分类号： H01L21/205 , H01L21/324
CPC分类号： H01L21/67109 , F27B17/0025 , H01L21/67115
摘要： The present invention generally relates to methods of cooling a substrate during rapid thermal processing. The methods generally include positioning a substrate in a chamber and applying heat to the substrate. After the temperature of the substrate is increased to a desired temperature, the substrate is rapidly cooled. Rapid cooling of the substrate is facilitated by increasing a flow rate of a gas through the chamber. Rapid cooling of the substrate is further facilitated by positioning the substrate in close proximity to a cooling plate. The cooling plate removes heat from substrate via conduction facilitated by gas located therebetween. The distance between the cooling plate and the substrate can be adjusted to create a turbulent gas flow therebetween, which further facilitates removal of heat from the substrate. After the substrate is sufficiently cooled, the substrate is removed from the chamber.
摘要翻译：本发明一般涉及在快速热处理期间冷却衬底的方法。所述方法通常包括将衬底定位在腔室中并将热量施加到衬底上。在将基板的温度升高到所需温度之后，快速冷却基板。通过增加通过室的气体的流速来促进衬底的快速冷却。通过将衬底定位在靠近冷却板的方式进一步促进衬底的快速冷却。冷却板通过由位于其间的气体促进的传导从衬底去除热量。可以调节冷却板和基板之间的距离以在它们之间产生湍流气流，这进一步有助于从基板去除热量。在衬底充分冷却之后，将衬底从腔室中取出。

9. 发明申请

WO2013148119A1 LASER NOISE ELIMINATION IN TRANSMISSION THERMOMETRY 审中-公开
标题翻译：传感器热噪声消除噪声
公开(公告)号：WO2013148119A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/029973
申请日：2013-03-08
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , HAW, Thomas
发明人： LI, Jiping , HUNTER, Aaron Muir , HAW, Thomas
IPC分类号： G01J5/02 , H01L21/324
CPC分类号： B23K26/00 , G01J1/0459 , G01J5/0007 , G01J5/02 , G01J5/06 , G01J5/0896 , G01J5/58 , G01N21/59
摘要： Apparatus and methods for measuring the temperature of a substrate are disclosed. The apparatus includes a source of temperature-indicating radiation, a detector for the temperature-indicating radiation, and a decorrelator disposed in an optical path between the source of temperature-indicating radiation and the detector for the temperature-indicating radiation. The decorrelator may be a broadband amplifier and/or a mode scrambler. A broadband amplifier may be a broadband laser, Bragg grating, a fiber Bragg grating, a Raman amplifier, a Brillouin amplifier, or combinations thereof. The decorrelator is selected to emit radiation that is transmitted, at least in part, by the substrate being monitored. The source is matched to the decorrelator such that the emission spectrum of the source is within the gain bandwidth of the decorrelator, if the decorrelator is a gain-driven device.
摘要翻译：公开了用于测量衬底温度的装置和方法。该装置包括温度指示辐射源，用于温度指示辐射的检测器，以及设置在温度指示辐射源和温度指示辐射检测器之间的光路中的去相关器。去相关器可以是宽带放大器和/或模式扰频器。宽带放大器可以是宽带激光器，布拉格光栅，光纤布拉格光栅，拉曼放大器，布里渊放大器或其组合。选择去相关器以发射至少部分由被监测的衬底透射的辐射。如果解相关器是增益驱动装置，则源与去相关器匹配，使得源的发射光谱在解相关器的增益带宽内。

10. 发明申请

WO2013070917A1 APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION 审中-公开
标题翻译：通过激光衍射测量三维半导体结构温度的装置和方法
公开(公告)号：WO2013070917A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/064153
申请日：2012-11-08
申请人： APPLIED MATERIALS, INC. , PAN, Heng , ROGERS, Matthew Scott , HUNTER, Aaron Muir , MOFFATT, Stephen
发明人： PAN, Heng , ROGERS, Matthew Scott , HUNTER, Aaron Muir , MOFFATT, Stephen
IPC分类号： H01L21/66
CPC分类号： G01J5/08 , G01J5/0007 , G01J5/0803 , G01J2005/0074 , G01J2005/0077
摘要： Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.
摘要翻译：本发明的实施例一般涉及用于测量和监测其上具有3D特征的基板的温度的方法的装置。该装置包括用于照射其上具有3D特征的基板的光源，用于聚焦和聚焦反射光的聚焦透镜，以及用于检测聚焦反射光的发射率的发射计。该装置还可以包括分束器和成像装置。成像装置提供反射光的衍射图案的放大图像。该方法包括用光照射具有3D特征的基板，并且将聚焦透镜聚焦在反射光上。然后将聚焦的光导向传感器，并测量衬底的发射率。反射光也可能撞击成像装置以产生反射光的衍射图案的放大图像。

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