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1. 发明申请

WO2009017894A1 METHOD FOR PARTITIONING AND INCOHERENTLY SUMMING A COHERENT BEAM 审中-公开
标题翻译：用于分离和不可避免地聚集相干光束的方法
公开(公告)号：WO2009017894A1
公开(公告)日：2009-02-05
申请号：PCT/US2008/067493
申请日：2008-06-19
申请人： APPLIED MATERIALS, INC. , JENNINGS, Dean , THOMAS, Timothy N. , MOFFATT, Stephen , LI, Jiping , ADAMS, Bruce E. , HOWELLS, Samuel C.
发明人： JENNINGS, Dean , THOMAS, Timothy N. , MOFFATT, Stephen , LI, Jiping , ADAMS, Bruce E. , HOWELLS, Samuel C.
IPC分类号： B23K26/067 , H01L21/268
CPC分类号： G02B27/283 , B23K26/0604 , B23K26/0613 , B23K26/0622 , B23K26/067 , G02B27/10 , G02B27/144 , G02B27/145 , G02B27/48 , H01L21/268 , H01L21/67115
摘要： A method and apparatus for decorrelating coherent light from a light source, such as a pulsed laser, in both time and space in an effort to provide intense and uniform illumination are provided. For some embodiments employing a pulsed light source, the output pulse may be stretched relative to the input pulse width. The methods and apparatus described herein may be incorporated into any application where intense, uniform illumination is desired, such as pulsed laser annealing, welding, ablating, and wafer stepper illuminating.
摘要翻译：提供了一种用于在时间和空间上从光源（例如脉冲激光）去除相干光的方法和装置，以提供强烈和均匀的照明。对于采用脉冲光源的一些实施例，可以相对于输入脉冲宽度拉伸输出脉冲。本文描述的方法和装置可以结合到需要强烈均匀照明的任何应用中，例如脉冲激光退火，焊接，烧蚀和晶片步进照明。

2. 发明申请

WO2009017903A1 METHOD AND APPARATUS FOR DECORRELATION OF SPATIALLY AND TEMPORALLY COHERENT LIGHT 审中-公开
标题翻译：用于装饰空间和时间相干光的方法和装置
公开(公告)号：WO2009017903A1
公开(公告)日：2009-02-05
申请号：PCT/US2008/067913
申请日：2008-06-23
申请人： APPLIED MATERIALS, INC. , JENNINGS, Dean , THOMAS, Timothy N. , MOFFATT, Stephen , LI, Jiping , ADAMS, Bruce E. , HOWELLS, Samuel C.
发明人： JENNINGS, Dean , THOMAS, Timothy N. , MOFFATT, Stephen , LI, Jiping , ADAMS, Bruce E. , HOWELLS, Samuel C.
IPC分类号： G02B5/30
CPC分类号： G02B27/28 , G02B27/283 , G02B27/48
摘要： A method and apparatus for decorrelating coherent light from a light source, such as a pulsed laser, in both time and space in an effort to provide intense and uniform illumination are provided. The techniques and apparatus described herein may be incorporated into any application where intense, uniform illumination is desired, such as pulsed laser annealing, welding, ablating, and wafer stepper illuminating.
摘要翻译：提供了一种用于在时间和空间上从光源（例如脉冲激光）去除相干光的方法和装置，以提供强烈和均匀的照明。本文描述的技术和装置可以并入任何需要强烈均匀照明的应用中，例如脉冲激光退火，焊接，烧蚀和晶片步进照明。

3. 发明申请

WO2013090581A1 MULTIPLE BEAM COMBINER FOR LASER PROCESSING APPARATUS 审中-公开
标题翻译：用于激光加工设备的多光束组合器
公开(公告)号：WO2013090581A1
公开(公告)日：2013-06-20
申请号：PCT/US2012/069518
申请日：2012-12-13
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HOLMGREN, Douglas E. , HOWELLS, Samuel C. , TONG, Edric , ADAMS, Bruce E. , LI, Jiping , HUNTER, Aaron Muir
发明人： MOFFATT, Stephen , HOLMGREN, Douglas E. , HOWELLS, Samuel C. , TONG, Edric , ADAMS, Bruce E. , LI, Jiping , HUNTER, Aaron Muir
IPC分类号： H01L21/268 , H01L21/26
CPC分类号： G02B27/106 , G02B17/0888 , G02B27/0025 , G02B27/10 , G02B27/1006 , G02B27/12 , G02B27/123 , G02B27/126 , G02B27/14 , G02B27/143 , G02B27/30
摘要： Apparatus and methods for combining beams of amplified radiation are disclosed. A beam combiner has a collimating optic positioned to receive a plurality of coherent radiation beams at a constant angle of incidence with respect to an optical axis of the collimating optic. The respective angles of incidence may also be different in some embodiments. The collimating optic has an optical property that collimates the beams. The optical property may be refractive or reflective, or a combination thereof. A collecting optic may also be provided to direct the plurality of beams to the collimating optic. The beam combiner may be used in a thermal processing apparatus to combine more than two beams of coherent amplified radiation, such as lasers, into a single beam.
摘要翻译：公开了用于组合放大辐射束的装置和方法。光束组合器具有准直光学器件，其被定位成以相对于准直光学器件的光轴的恒定入射角接收多个相干辐射束。在一些实施例中，相应的入射角也可以不同。准直光学元件具有使光束准直的光学特性。光学性质可以是折射或反射的，或其组合。还可以提供收集光学器件以将多个光束引导到准直光学元件。光束组合器可以用在热处理装置中，以将多于两个的相干放大辐射束（例如激光器）组合成单个光束。

4. 发明申请

WO2009048804A1 HIGH SPEED PHASE SCRAMBLING OF A COHERENT BEAM USING PLASMA 审中-公开
标题翻译：使用等离子体的相干光束的高速相位扫描
公开(公告)号：WO2009048804A1
公开(公告)日：2009-04-16
申请号：PCT/US2008/078704
申请日：2008-10-03
申请人： APPLIED MATERIALS, INC. , JENNINGS, Dean , ADAMS, Bruce E. , THOMAS, Timothy N. , MOFFATT, Stephen
发明人： JENNINGS, Dean , ADAMS, Bruce E. , THOMAS, Timothy N. , MOFFATT, Stephen
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A laser beam is modulated at a very high frequency to produce uniform radiant flux densities on substrate surface processing regions during thermal processing. Beam modulation is achieved by passing the laser beam through a plasma which causes phase randomization within the laser beam. This method may be used for any application where intense, uniform illumination is desired, such as pulsed laser annealing, ablating, and wafer stepper illuminating.
摘要翻译：激光束以非常高的频率被调制，以在热处理期间在衬底表面处理区域上产生均匀的辐射通量密度。通过使激光束通过等离子体来实现光束调制，其引起激光束内的相位随机化。该方法可以用于需要强烈均匀照明的任何应用，例如脉冲激光退火，烧蚀和晶片步进照明。

5. 发明申请

WO2009023423A1 INCREASED NANOSECOND LASER PULSE-TO-PULSE ENERGY REPEATABILITY USING ACTIVE LASER PULSE ENERGY CONTROL 审中-公开
标题翻译：增加激光器激光脉冲能量可重复使用激光脉冲能量控制
公开(公告)号：WO2009023423A1
公开(公告)日：2009-02-19
申请号：PCT/US2008/071246
申请日：2008-07-25
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , THOMAS, Timothy N. , JENNINGS, Dean , ADAMS, Bruce E.
发明人： LI, Jiping , HUNTER, Aaron Muir , THOMAS, Timothy N. , JENNINGS, Dean , ADAMS, Bruce E.
IPC分类号： H01S3/10 , H01S3/101
CPC分类号： B23K26/0622 , H01L21/02686 , H01L21/2026
摘要： A method and apparatus for reducing the pulse-to-pulse laser energy variation (i.e., increasing the pulse-to-pulse laser energy repeatability) from a pulsed laser source are provided. In this manner, laser pulses impingent on a processing plane, such as the surface of a wafer or other substrate, may have substantially the same energy content leading to a more controlled process when compared to conventional processing. The method may be based on in-situ detection of the pulse energy level and the subsequent active adjustment of the transmitted laser pulse energy in a closed-loop control scheme. Furthermore, the active adjustment of the laser pulse energy may occur within a few nanoseconds after the original laser pulse is generated by a pulsed laser source.
摘要翻译：提供了一种用于从脉冲激光源减少脉冲对脉冲激光能量变化（即，增加脉冲到脉冲激光能量重复性）的方法和装置。以这种方式，与常规处理相比，照射在诸如晶片或其它基板的表面的处理平面上的激光脉冲可具有基本上相同的能量含量，导致更受控制的过程。该方法可以基于在闭环控制方案中脉冲能量水平的现场检测和随后的发射的激光脉冲能量的主动调节。此外，在通过脉冲激光源产生原始激光脉冲之后，激光脉冲能量的主动调节可能在几纳秒内发生。

6. 发明申请

WO2010036621A2 DEFECT-FREE JUNCTION FORMATION USING OCTADECABORANE SELF-AMORPHIZING IMPLANTS 审中-公开
标题翻译：使用OCTADECABORANE自补偿植入物进行无缺陷断层形成
公开(公告)号：WO2010036621A2
公开(公告)日：2010-04-01
申请号：PCT/US2009/057708
申请日：2009-09-21
申请人： APPLIED MATERIALS, INC. , LI, Jiping , HUNTER, Aaron Muir , ADAMS, Bruce E. , MOFFITT, Theodore , MOFFATT, Stephen
发明人： LI, Jiping , HUNTER, Aaron Muir , ADAMS, Bruce E. , MOFFITT, Theodore , MOFFATT, Stephen
IPC分类号： H01L21/265
CPC分类号： H01L21/265 , H01J37/32357 , H01J37/32412 , H01L21/26513 , H01L21/324
摘要： A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then annealed to completely dissociate and activate the boron clusters. The annealing may take place by melting the implanted regions or by a sub-melt annealing process.
摘要翻译：一种用硼簇植入半导体衬底的方法和装置。通过等离子体浸渍或离子束注入，注入十八硼烷衬底。然后将衬底表面退火以完全解离并激活硼簇。退火可以通过熔化注入区域或通过亚熔融退火工艺进行。

7. 发明申请

WO2011034641A1 METHODS OF SOLID PHASE RECRYSTALLIZATION OF THIN FILM USING PULSE TRAIN ANNEALING METHOD 审中-公开
标题翻译：使用脉冲火焰退火方法的薄膜固相重组方法
公开(公告)号：WO2011034641A1
公开(公告)日：2011-03-24
申请号：PCT/US2010/035013
申请日：2010-05-14
申请人： APPLIED MATERIALS, INC. , MOFFATT, Stephen , HUNTER, Aaron Muir , ADAMS, Bruce E.
发明人： MOFFATT, Stephen , HUNTER, Aaron Muir , ADAMS, Bruce E.
IPC分类号： H01L21/324 , H01L21/20
CPC分类号： H01L21/02686 , C30B13/24 , C30B29/06 , H01L21/02521
摘要： Embodiments of the present invention provide methods of solid phase recrystallization of thin film using a plurality of pulses of electromagnetic energy. In one embodiment, the methods of the present invention may be used to anneal an entire substrate surface or selected regions of a surface of a substrate by delivering a plurality of pluses of energy to a crystalline seed region or layer upon which an amorphous layer is deposited to recrystallize the amorphous layer so that it has the same grain structure and crystal orientation as that of the underlying crystalline seed region or layer.
摘要翻译：本发明的实施例提供使用多个电磁能脉冲进行薄膜固相重结晶的方法。在一个实施例中，本发明的方法可以用于通过将多个能量递送到沉积非晶层的结晶种子区域或层来退火整个衬底表面或衬底的表面的选定区域使非晶层重结晶，使其具有与下面的结晶种子区域或层相同的晶粒结构和晶体取向。

8. 发明申请

WO2008063840A1 COMPENSATION TECHNIQUES FOR SUBSTRATE HEATING PROCESSES 审中-公开
标题翻译：基板加热工艺补偿技术
公开(公告)号：WO2008063840A1
公开(公告)日：2008-05-29
申请号：PCT/US2007/083271
申请日：2007-11-01
申请人： APPLIED MATERIALS, INC. , RANISH, Joseph M. , ADAMS, Bruce E.
发明人： RANISH, Joseph M. , ADAMS, Bruce E.
IPC分类号： F27B5/14
CPC分类号： C23C16/46 , C21D1/34
摘要： Methods for compensating for a thermal profile in a substrate heating process are provided herein. In one embodiment, a method of processing a substrate includes determining an initial thermal profile of a substrate resulting from a process; imposing a compensatory thermal profile on the substrate based on the initial thermal profile; and performing the process to create a desired thermal profile on the substrate. In other embodiments of the invention, the initial substrate thermal profile is compensated for by adjusting a local mass heated per unit area, a local heat capacity per unit area, or an absorptivity or reflectivity of a component proximate the substrate prior to performing the process. In another embodiment, the heat provided by an edge ring to the substrate may be controlled either prior to or during the substrate heating process.
摘要翻译：本文提供了用于补偿基板加热过程中的热分布的方法。在一个实施例中，处理衬底的方法包括确定由工艺产生的衬底的初始热分布; 基于初始热分布在衬底上施加补偿热分布; 并执行该过程以在衬底上产生期望的热分布。在本发明的其它实施例中，通过在执行该过程之前通过调节每单位面积加热的局部质量，每单位面积的局部热容量或接近该衬底的组分的吸收率或反射率来补偿初始衬底热分布。在另一个实施例中，由边缘环提供到衬底的热可以在衬底加热过程之前或期间被控制。

9. 发明申请

WO2010059300A2 PYROMETRY FOR SUBSTRATE PROCESSING 审中-公开
标题翻译：用于基板加工的色温
公开(公告)号：WO2010059300A2
公开(公告)日：2010-05-27
申请号：PCT/US2009/059857
申请日：2009-10-07
申请人： APPLIED MATERIALS, INC. , PATALAY, Kailash Kiran , HUNTER, Aaron Muir , ADAMS, Bruce E.
发明人： PATALAY, Kailash Kiran , HUNTER, Aaron Muir , ADAMS, Bruce E.
IPC分类号： H01L21/00 , H01L21/02 , H01L21/324
CPC分类号： H01L21/67248
摘要： A substrate processing system includes a processing chamber, a pedestal for supporting a substrate disposed within the processing chamber, and an optical pyrometry assembly coupled to the processing chamber to measure an emitted light originating substantially from a portion of the pedestal or substrate. The optical pyrometry assembly further includes a light receiver, and an optical detector. The optical pyrometry assembly receives a portion of the emitted light, and a temperature of the substrate is determined from an intensity of the portion of the emitted light near at least one wavelength. A method of measuring a temperature of a substrate during processing, includes disposing a light pipe near a portion of the pedestal supporting the substrate or pedestal, shielding the end of the light pipe from stray light so that the end of the light pipe receives light from the portion of the pedestal or substrate, purging the end of the light pipe with a gas to reduce contamination of the end of the light pipe, detecting a portion of the light emitted from the pedestal and received by the light pipe, and determining a temperature of the substrate from the intensity of the portion of the emitted light from the pedestal or the substrate near at least one wavelength.
摘要翻译：基板处理系统包括处理腔室，用于支撑设置在处理腔室内的基板的基座以及耦合到处理腔室的光学高温测定组件，以测量基本上源自一部分的发射光基座或基板。光学高温测定组件还包括光接收器和光学检测器。光学高温测定组件接收一部分发射光，并且基于至少一个波长附近的发射光部分的强度来确定衬底的温度。在处理期间测量基板的温度的方法包括在支撑基板或基座的基座的一部分附近布置光管，将光管的端部屏蔽以避免杂散光，从而使得光管的端部接收来自基座或基板的该部分，用气体吹扫光管的端部以减少光管端部的污染，检测从基座发射并由光管接收的一部分光，并且确定温度从基座或基板发出的光的至少一个波长附近的部分的强度确定基板的厚度。

10. 发明申请

WO2013033637A2 CRYSTALLIZATION METHODS 审中-公开
标题翻译：结晶方法
公开(公告)号：WO2013033637A2
公开(公告)日：2013-03-07
申请号：PCT/US2012/053527
申请日：2012-08-31
申请人： APPLIED MATERIALS, INC. , ADAMS, Bruce E. , HUNTER, Aaron Muir , MOFFAT, Stephan
发明人： ADAMS, Bruce E. , HUNTER, Aaron Muir , MOFFAT, Stephan
IPC分类号： H01L21/324
CPC分类号： H01L21/02686 , H01L21/02521 , H01L21/268
摘要： Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.
摘要翻译：描述了用非晶半导体层或具有小晶体的半导体层处理衬底以在衬底中形成大晶体的装置和方法。使用将脉冲能量递送到处理区域的渐进熔融方法来鉴定和熔化基底的处理区域。然后使用将脉冲能量递送到该区域的逐步结晶过程将处理区域重结晶。选择渐进式结晶过程中输送的脉冲能量，以使熔融材料冻结时将小晶体转化为大晶体。

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