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1. 发明申请

WO2011017222A3 METHOD AND APPARATUS FOR DRY CLEANING A COOLED SHOWERHEAD 审中-公开
公开(公告)号：WO2011017222A3
公开(公告)日：2011-02-10
申请号：PCT/US2010/043940
申请日：2010-07-30
申请人： APPLIED MATERIALS, INC. , GRIFFIN, Kevin , KRYLIOUK, Olga , SU, Jie
发明人： GRIFFIN, Kevin , KRYLIOUK, Olga , SU, Jie
IPC分类号： H01L21/205
摘要： The present invention generally provides a method and apparatus for cleaning a showerhead of a deposition chamber, such as a metal organic chemical vapor deposition (MOCVD) chamber. In one embodiment, the showerhead is cleaned without exposing the chamber to the atmosphere outside of the chamber ( i.e., in situ cleaning). In one embodiment, flow of liquid coolant through a cooling system that is in fluid communication with the showerhead is redirected to bypass the showerhead, and the liquid coolant is drained from the showerhead. In one embodiment, any remaining coolant is flushed from the showerhead via a pressurized gas source. In one embodiment, the showerhead is then heated to an appropriate cleaning temperature. In one embodiment, the flow of liquid coolant from the cooling system is then redirected to the showerhead and the system is adjusted for continued processing. Thus, the entire showerhead cleaning process is performed with minimal change to the flow of coolant through the cooling system.

2. 发明申请

WO2010129289A2 DECONTAMINATION OF MOCVD CHAMBER USING NH3 PURGE AFTER IN-SITU CLEANING 审中-公开
标题翻译：在现场清洁后使用NH3净化的MOCVD室的去除
公开(公告)号：WO2010129289A2
公开(公告)日：2010-11-11
申请号：PCT/US2010/032592
申请日：2010-04-27
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , SU, Jie , GRIFFIN, Kevin , JUN, Sung Won , NIJHAWAN, Sandeep , DONG, Xizi , POON, Tze , WASHINGTON, Lori, D. , GRAYSON, Jacob
发明人： KRYLIOUK, Olga , SU, Jie , GRIFFIN, Kevin , JUN, Sung Won , NIJHAWAN, Sandeep , DONG, Xizi , POON, Tze , WASHINGTON, Lori, D. , GRAYSON, Jacob
IPC分类号： H01L21/02 , H01L33/02 , H01L21/205
CPC分类号： C23C16/301 , C23C16/4405 , C23C16/4408 , C30B25/00 , C30B29/40 , C30B29/406 , H01L33/007 , H01L33/0075
摘要： Embodiments of the present invention generally relate to methods and apparatus for removing unwanted deposition build-up from one more interior surfaces of a substrate processing chamber after a substrate is processed in a chamber to form, for example, Group III-V materials by metal-organic chemical vapor deposition (MOCVD) deposition processes. In one embodiment, a method for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber is provided. The method comprises depositing one or more Group III containing layers over a substrate disposed in the substrate processing chamber, transferring the substrate out of the substrate processing chamber, and pulsing a halogen containing gas into the substrate processing chamber to remove at least a portion of the unwanted deposition build-up from one or more interior surfaces of the substrate processing chamber.
摘要翻译：本发明的实施方案一般涉及用于在衬底在腔室中处理以形成例如III-V族材料之后，从衬底处理室的多个内表面去除不想要的沉积物积累的方法和装置，有机化学气相沉积（MOCVD）沉积工艺。在一个实施例中，提供了从衬底处理室的一个或多个内表面去除不想要的沉积积聚的方法。该方法包括在设置在衬底处理室中的衬底上沉积一个或多个含III族的层，将衬底转移到衬底处理室之外，并将含卤素的气体脉冲到衬底处理室中以去除至少一部分从衬底处理室的一个或多个内表面积聚不需要的沉积物。

3. 发明申请

WO2009046261A1 METHOD FOR DEPOSITING GROUP III/V COMPOUNDS 审中-公开
标题翻译：沉积III / V族化合物的方法
公开(公告)号：WO2009046261A1
公开(公告)日：2009-04-09
申请号：PCT/US2008/078687
申请日：2008-10-03
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , NIJHAWAN, Sandeep , MELNIK, Yuriy , WASHINGTON, Lori D. , GRAYSON, Jacob W. , JUN, Sung W. , SU, Jie
发明人： KRYLIOUK, Olga , NIJHAWAN, Sandeep , MELNIK, Yuriy , WASHINGTON, Lori D. , GRAYSON, Jacob W. , JUN, Sung W. , SU, Jie
IPC分类号： C30B23/00 , C30B25/00
CPC分类号： C30B25/02 , C23C16/303 , C23C16/4488 , C23C16/45578 , C30B29/403
摘要： Embodiments of the invention generally relate to methods for forming Group III-V materials by a hydride vapor phase epitaxy (HVPE) process. In one embodiment, a method for forming a gallium nitride material on a substrate within a processing chamber is provided which includes heating a metallic source to form a heated metallic source, wherein the heated metallic source contains gallium, aluminum, indium, alloys thereof, or combinations thereof, exposing the heated metallic source to chlorine gas while forming a metallic chloride gas, exposing the substrate to the metallic chloride gas and a nitrogen precursor gas while forming a metal nitride layer on the substrate during the HVPE process. The method further provides exposing the substrate to chlorine gas during a pretreatment process prior to forming the metal nitride layer. In one example, the exhaust conduit of the processing chamber is heated to about 200°C or less during the pretreatment process.
摘要翻译：本发明的实施方案一般涉及通过氢化物气相外延（HVPE）方法形成III-V族材料的方法。在一个实施例中，提供了一种用于在处理室内的衬底上形成氮化镓材料的方法，其包括加热金属源以形成加热的金属源，其中加热的金属源包含镓，铝，铟，其合金或其组合，同时形成金属氯化物气体，将加热的金属源暴露于氯气中，在HVPE工艺期间在衬底上形成金属氮化物层，同时将衬底暴露于金属氯化物气体和氮气前体气体。该方法还在形成金属氮化物层之前在预处理工艺期间将衬底暴露于氯气。在一个实例中，处理室的排气管道在预处理过程中被加热到约200℃或更低。

4. 发明申请

WO2011106215A2 GROWTH OF GROUP III-V MATERIAL LAYERS BY SPATIALLY CONFINED EPITAXY 审中-公开
标题翻译：第III-V组材料层的增长由空间限制的外延
公开(公告)号：WO2011106215A2
公开(公告)日：2011-09-01
申请号：PCT/US2011/025063
申请日：2011-02-16
申请人： APPLIED MATERIALS, INC. , SU, Jie , KRYLIOUK, Olga
发明人： SU, Jie , KRYLIOUK, Olga
IPC分类号： H01L33/20 , H01L33/16 , H01L21/20
CPC分类号： H01L21/02502 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L21/0265
摘要： Techniques for crack- free growth of GaN, and related, films on larger- size substrates via spatially confined epitaxy are described.
摘要翻译：描述了通过空间限制外延在大尺寸基板上无GaN生长的技术和相关的膜。

5. 发明申请

WO2011031521A2 METHOD OF DECONTAMINATION OF PROCESS CHAMBER AFTER IN-SITU CHAMBER CLEAN 审中-公开
标题翻译：清洗室内原位清洗后加工室的方法
公开(公告)号：WO2011031521A2
公开(公告)日：2011-03-17
申请号：PCT/US2010/046789
申请日：2010-08-26
申请人： APPLIED MATERIALS, INC. , SU, Jie , WASHINGTON, Lori , NIJHAWAN, Sandeep , KRYLIOUK, Olga , GRAYSON, Jacob , KANG, San Won , LEE, Dong Hyung , CHUNG, Hua
发明人： SU, Jie , WASHINGTON, Lori , NIJHAWAN, Sandeep , KRYLIOUK, Olga , GRAYSON, Jacob , KANG, San Won , LEE, Dong Hyung , CHUNG, Hua
IPC分类号： H01L21/302
CPC分类号： C23C16/4405 , C23C16/4404 , C23C16/45574 , H01L21/67115
摘要： A method and apparatus for removing deposition products from internal surfaces of a processing chamber, and for preventing or slowing growth of such deposition products. A halogen containing gas is provided to the chamber to etch away deposition products. A halogen scavenging gas is provided to the chamber to remove any residual halogen. The halogen scavenging gas is generally activated by exposure to electromagnetic energy, either inside the processing chamber by thermal energy, or in a remote chamber by electric field, UV, or microwave. A deposition precursor may be added to the halogen scavenging gas to form a deposition resistant film on the internal surfaces of the chamber. Additionally, or alternately, a deposition resistant film may be formed by sputtering a deposition resistant metal onto internal components of the processing chamber in a PVD process.
摘要翻译：一种用于从处理室的内表面移除沉积产物并用于防止或减缓这种沉积产物的生长的方法和设备。向腔室提供含卤素的气体以蚀刻掉沉积产物。向腔室提供卤素清除气体以除去任何残留的卤素。卤素清除气体通常通过暴露于电磁能激活，或者通过热能在处理室内进行激活，或者通过电场，UV或者微波在远程室进行。可以将沉积前体添加到卤素清除气体中以在腔室的内表面上形成抗沉积膜。另外或者可选地，可以通过在PVD工艺中将抗沉积金属溅射到处理室的内部部件上来形成抗沉积膜。

6. 发明申请

WO2011014822A3 LIGHT EMITTING DIODE WITH ENHANCED QUANTUM EFFICIENCY AND METHOD OF FABRICATION 审中-公开
公开(公告)号：WO2011014822A3
公开(公告)日：2011-02-03
申请号：PCT/US2010/043993
申请日：2010-07-30
申请人： APPLIED MATERIALS, INC. , SU, Jie , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , CHEN, Lu , ISHIKAWA, Tetsuya
发明人： SU, Jie , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , CHEN, Lu , ISHIKAWA, Tetsuya
IPC分类号： H01L33/08 , H01L33/04 , H01L33/06
摘要： One embodiment of a quantum well structure comprises an active region including active layers that comprise quantum wells and barrier layers wherein some or all of the active layers are p type doped. P type doping some or all of the active layers improves the quantum efficiency of III-V compound semiconductor light emitting diodes by locating the position of the P-N junction in the active region of the device thereby enabling the dominant radiative recombination to occur within the active region. In one embodiment, the quantum well structure is fabricated in a cluster tool having a hydride vapor phase epitaxial (HVPE) deposition chamber with a eutectic source alloy. In one embodiment, the indium gallium nitride (InGaN) layer and the magnesium doped gallium nitride (Mg-GaN) or magnesium doped aluminum gallium nitride (Mg-AlGaN) layer are grown in separate chambers by a cluster tool to avoid indium and magnesium cross contamination. Doping of group III-nitrides by hydride vapor phase epitaxy using group III-metal eutectics is also described. In one embodiment, a source is provided for HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the source including a liquid phase mechanical (eutectic) mixture with a group III species. In one embodiment, a method is provided for performing HVPE deposition of a p-type or an n-type group III-nitride epitaxial film, the method including using a liquid phase mechanical (eutectic) mixture with a group III species.

7. 发明申请

WO2010129292A2 CLUSTER TOOL FOR LEDS 审中-公开
标题翻译： LED集群工具
公开(公告)号：WO2010129292A2
公开(公告)日：2010-11-11
申请号：PCT/US2010/032597
申请日：2010-04-27
申请人： APPLIED MATERIALS, INC. , NIJHAWAN, Sandeep , BURROWS, Brian, H. , ISHIKAWA, Tetsuya , KRYLIOUK, Olga , VASUDEV, Anand , SU, Jie , QUACH, David, H. , CHANG, Anzhong , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： NIJHAWAN, Sandeep , BURROWS, Brian, H. , ISHIKAWA, Tetsuya , KRYLIOUK, Olga , VASUDEV, Anand , SU, Jie , QUACH, David, H. , CHANG, Anzhong , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L33/00
CPC分类号： H01L21/67109 , C30B25/02 , C30B29/406 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/67115 , H01L21/67167 , H01L21/67207 , H01L33/007
摘要： The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.
摘要翻译：本发明总体上提供了用于形成LED结构的装置和方法。本发明的一个实施方案提供了一种用于制造氮化物复合结构的方法，包括通过氢化物气相外延（HVPE）工艺或金属有机物在第一处理室中在衬底上形成包含第一III族元素的第一层和氮化学气相沉积（MOCVD）工艺，通过MOCVD工艺在第二处理室中在第一层上形成包含第二组III元素的第二层和氮，并且形成包含第三族III族元素和氮的第三层第二层通过MOCVD过程。

8. 发明申请

WO2009099776A9 CLOSED LOOP MOCVD DEPOSITION CONTROL 审中-公开
公开(公告)号：WO2009099776A9
公开(公告)日：2009-08-13
申请号：PCT/US2009/031831
申请日：2009-01-23
申请人： APPLIED MATERIALS, INC. , SU, Jie , WASHINGTON, Lori, D. , BOUR, David , GRAYSON, Jacob , NIJHAWAN, Sandeep , STEVENS, Ronald
发明人： SU, Jie , WASHINGTON, Lori, D. , BOUR, David , GRAYSON, Jacob , NIJHAWAN, Sandeep , STEVENS, Ronald
IPC分类号： H01L21/205 , H01L33/00
摘要： A method and apparatus are provided for monitoring and controlling substrate processing parameters for a cluster tool that utilizes chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group Ill-nitride film on a plurality of substrates within a processing chamber. A closed-loop control system performs in-situ monitoring of the Group Ill-nitride film growth rate and adjusts film growth parameters as required to maintain a target growth rate. In another embodiment, a closed-loop control system performs in-situ monitoring of film growth parameters for multiple processing chambers for one or more film deposition systems.

9. 发明申请

WO2012021321A2 COMPOSITE SUBSTRATES FOR DIRECT HEATING AND INCREASED TEMPERATURE UNIFORMITY 审中-公开
标题翻译：用于直接加热和增加温度均匀性的复合材料
公开(公告)号：WO2012021321A2
公开(公告)日：2012-02-16
申请号：PCT/US2011/046116
申请日：2011-08-01
申请人： APPLIED MATERIALS, INC. , SU, Jie , OLGADO, Donald J.K. , KUTNEY, Michael C.
发明人： SU, Jie , OLGADO, Donald J.K. , KUTNEY, Michael C.
IPC分类号： H01L21/205 , H01L21/683
CPC分类号： F27B17/0025 , C23C16/4586 , C23C16/46 , C30B23/063 , C30B25/105 , H01L21/67115 , H01L21/68764 , H01L21/68771 , H01L21/68785
摘要： Embodiments of the present invention generally relate to apparatus and methods for uniformly heating substrates. The apparatus include a transferable puck having at least one electrode and a dielectric coating. The transferable puck can be biased with a biasing assembly relative to a substrate, and transferred independently of the biasing assembly during a fabrication process while maintaining the bias relative to the substrate. The puck absorbs radiant heat from a heat source and uniformly conducts the heat to a substrate coupled to the puck. The puck has high emissivity and high thermal conductivity for absorbing and transferring the radiant heat to the substrate. The high thermal conductivity allows for a uniform temperature profile across the substrate, thereby increasing deposition uniformity. The method includes disposing a light-absorbing material on an optically transparent substrate, and radiating the light-absorbing material with a radiant heat source to heat the optically transparent substrate.
摘要翻译：本发明的实施例总体涉及用于均匀地加热衬底的装置和方法。该设备包括具有至少一个电极和电介质涂层的可转移圆盘。可转移圆盘可以用偏置组件相对于衬底偏置，并且在制造过程期间独立于偏置组件而转移，同时相对于衬底保持偏置。冰球吸收来自热源的辐射热并将热量均匀地传导至与冰球连接的基板。该圆盘具有高发射率和高导热性，用于吸收辐射热量并将辐射热量传递给基板。高导热率允许横跨衬底的均匀温度分布，由此增加沉积均匀性。该方法包括将光吸收材料设置在光学透明衬底上，并用辐射热源辐射光吸收材料以加热光学透明衬底。

10. 发明申请

WO2011081941A2 SURFACE PASSIVATION TECHNIQUES FOR CHAMBER-SPLIT PROCESSING 审中-公开
标题翻译：用于室分解处理的表面钝化技术
公开(公告)号：WO2011081941A2
公开(公告)日：2011-07-07
申请号：PCT/US2010/060326
申请日：2010-12-14
申请人： APPLIED MATERIALS, INC. , SU, Jie
发明人： SU, Jie
IPC分类号： H01L33/02 , H01L33/44 , H01L21/205
CPC分类号： H01L21/0254 , C23C16/18 , C23C16/20 , C23C16/56 , H01L21/0242 , H01L21/02458 , H01L21/02656 , H01L33/007
摘要： Surface passivation techniques for chamber- split processing are described. A method includes forming a first Group III-V material layer above a substrate, the first Group III-V material layer having a top surface. A passivation layer is deposited on the top surface of the Group III- V material layer. The passivation layer is removed. Subsequently, a second Group III-V material layer is formed above the first Group III- V material layer.
摘要翻译：描述了腔分离处理的表面钝化技术。一种方法包括在衬底上形成第一III-V族材料层，第一III-V族材料层具有顶表面。钝化层沉积在III-V族材料层的顶表面上。去除钝化层。随后，在第一III-V族材料层之上形成第二III-V族材料层。

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