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1. 发明公开

EP1694885A2 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：具有多chemisms金属分离系统
公开(公告)号：EP1694885A2
公开(公告)日：2006-08-30
申请号：EP04760000.2
申请日：2004-04-16
申请人： APPLIED MATERIALS, INC. , Ellwanger, Russell C.
发明人： YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
IPC分类号： C25D1/00
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.

2. 发明申请

WO2004094702A2 MULTI-CHEMISTRY PLATING SYSTEM 审中-公开
标题翻译：多化学镀层系统
公开(公告)号：WO2004094702A2
公开(公告)日：2004-11-04
申请号：PCT/US2004/012012
申请日：2004-04-16
申请人： APPLIED MATERIALS, INC. , ELLWANGER, Russell, C. , YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
发明人： YANG, Michael, X. , XI, Ming , BRITCHER, Eric, B. , DONOSO, Bernardo , PANG, Lily, L. , SHERMAN, Svetlana , HO, Henry , NGUYEN, Anh, N. , LERNER, Alexander, N. , D'AMBRA, Allen, L. , SHANMUGASUNDRAM, Arulkumar , ISHIKAWA, Tetsuya , RABINOVICH, Yevgeniy , LUBOMIRSKY, Dmitry , MOK, Yeuk-Fai, Edwin , NGUYEN, Son, T.
IPC分类号： C25D
CPC分类号： H01L21/67167 , B08B3/02 , C25D5/003 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6719 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

3. 发明申请

WO2011028529A2 IN-SITU DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY THERMAL SPRAYING 审中-公开
标题翻译：热喷涂原位沉积电池活性锂材料
公开(公告)号：WO2011028529A2
公开(公告)日：2011-03-10
申请号：PCT/US2010/046501
申请日：2010-08-24
申请人： APPLIED MATERIALS, INC. , SHANG, Quanyuan , YANG, Lu , BROWN, Karl M. , OLGADO, Donald J. K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert Z. , CHEN, Liang-Yuh
发明人： SHANG, Quanyuan , YANG, Lu , BROWN, Karl M. , OLGADO, Donald J. K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert Z. , CHEN, Liang-Yuh
IPC分类号： C23C4/12 , C23C4/04 , C23C4/18 , B05D1/08 , B05D3/00 , B05D7/14
CPC分类号： H01M4/0419 , H01M4/1391
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising electrochemically active precursor particles dispersed in a carrying medium is provided to a processing chamber and thermally treated using a combustible gas mixture also provided to the chamber. The precursor is converted to nanocrystals by the thermal energy, and the nanocrystals are deposited on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity.
摘要翻译：提供了一种用于形成薄膜电池的电化学层的方法和设备。将包含分散于载运介质中的电化学活性前体颗粒的前体混合物提供至处理室并使用也提供至该室的可燃气体混合物进行热处理。前体通过热能转化成纳米晶体，并且纳米晶体沉积在基底上。第二种前体可以与纳米晶体混合，因为它们沉积在表面上以增强附着力和导电性。

4. 发明申请

WO2011009093A2 A METHOD OF FORMING A GROUP III-NITRIDE CRYSTALLINE FILM ON A PATTERNED SUBSTRATE BY HYDRIDE VAPOR PHASE EPITAXY (HVPE) 审中-公开
标题翻译：通过氢化物气相外延（HVPE）在图案化基板上形成III族氮化物结晶膜的方法
公开(公告)号：WO2011009093A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/042351
申请日：2010-07-16
申请人： APPLIED MATERIALS, INC. , KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
发明人： KRYLIOUK, Olga , MELNIK, Yuriy , KOJIRI, Hidehiro , ISHIKAWA, Tetsuya
IPC分类号： H01L21/20 , H01L33/02
CPC分类号： H01L29/045 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02439 , H01L21/02458 , H01L21/02488 , H01L21/0254 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L29/04 , H01L33/007 , H01L33/12 , H01L33/16 , H01L33/22
摘要： A method of depositing a high quality low defect single crystalline Group Ill-Nitride film. A patterned substrate having a plurality of features with inclined sidewalls separated by spaces is provided. A Group Ill-Nitride film is deposited by a hydride vapor phase epitaxy (HVPE) process over the patterned substrate. The HVPE deposition process forms a Group Ill-Nitride film having a first crystal orientation in the spaces between features and a second different crystal orientation on the inclined sidewalls. The first crystal orientation in the spaces subsequently overgrows the second crystal orientation on the sidewalls and in the process turns over and terminates treading dislocations formed in the first crystal orientation.
摘要翻译：一种沉积高质量低缺陷单晶III族氮化物膜的方法。提供具有多个特征的图案化衬底，其中倾斜侧壁被空间隔开。通过氢化物气相外延（HVPE）工艺在图案化衬底上沉积III族氮化物膜。 HVPE沉积工艺形成在特征之间的空间中具有第一晶体取向并且在倾斜侧壁上具有第二不同晶体取向的III族氮化物膜。空间中的第一个晶体取向随后在侧壁上过度扩大第二晶体取向，并且在该过程中翻转并终止在第一晶体取向中形成的踩踏位错。

5. 发明申请

WO2010118293A3 HVPE CHAMBER HARDWARE 审中-公开
公开(公告)号：WO2010118293A3
公开(公告)日：2010-10-14
申请号：PCT/US2010/030492
申请日：2010-04-09
申请人： APPLIED MATERIALS, INC. , ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
发明人： ISHIKAWA, Tetsuya , QUACH, David, H. , CHANG, Anzhong , KRYLIOUK, Olga , MELNIK, Yuriy , RATIA, Harsukhdeep, S. , NGUYEN, Son, T. , PANG, Lily
IPC分类号： H01L21/20 , H01L33/02
摘要： Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.

6. 发明申请

WO2003100818A1 CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL 审中-公开
标题翻译：具有磁性等离子体控制的电容耦合等离子体反应器
公开(公告)号：WO2003100818A1
公开(公告)日：2003-12-04
申请号：PCT/US2003/016559
申请日：2003-05-22
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , MILLER, Matthew, L. , YANG, Jang, Gyoo , CHAE, Heeyoep , BARNES, Michael , ISHIKAWA, Tetsuya , YE, Yan
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。所述反应器还包括至少邻近所述天花板的顶部螺线管电磁体，所述架空螺线管电磁体，所述天花板，所述侧壁和所述工件支撑件沿着公共对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

7. 发明申请

WO2022240567A1 MULTI-PORT EXHAUST SYSTEM FOR EPITAXIAL DEPOSITION CHAMBER 审中-公开
公开(公告)号：WO2022240567A1
公开(公告)日：2022-11-17
申请号：PCT/US2022/025772
申请日：2022-04-21
申请人： APPLIED MATERIALS, INC.
发明人： ISHIKAWA, Tetsuya , SRINIVASAN, Swaminathan T. , BAUER, Matthias , SUBBANNA, Manjunath , MORADIAN, Ala , SHAH, Kartik Bhupendra , SANCHEZ, Errol Antonio C. , RICE, Michael R. , REIMER, Peter , SHULL, Marc
IPC分类号： C30B25/14 , C30B25/12 , C30B25/10 , C23C16/44 , C23C16/48 , C30B25/165 , H01L21/67115 , H01L21/6719
摘要： Embodiments described herein include processes and apparatuses relate to epitaxial deposition. A method for epitaxially depositing a material is provided and includes positioning a substrate on a substrate support surface of a susceptor within a process volume of a chamber body, where the process volume contains upper and lower chamber regions. The method includes flowing a process gas containing one or more chemical precursors from an upper gas inlet on a first side of the chamber body, across the substrate, and to an upper gas outlet on a second side of the chamber body, flowing a purge gas from a lower gas inlet on the first side of the chamber body, across the lower surface of the susceptor, and to a lower gas outlet on the second side of the chamber body, and maintaining a pressure of the lower chamber region greater than a pressure of the upper chamber region.

8. 发明申请

WO2003008666A1 ELECTROSTATIC CHUCK WITH DIELECTRIC COATING 审中-公开
标题翻译：带电介质涂层的静电切割机
公开(公告)号：WO2003008666A1
公开(公告)日：2003-01-30
申请号：PCT/US2002/020660
申请日：2002-07-01
申请人： APPLIED MATERIALS, INC.
发明人： KHOLODENKO, Arnold V., , CHAFIN, Michael G., , MAYS, Brad , ISHIKAWA, Tetsuya , KUMAR, Amanda H., , GRIMARD, Dennis S.,
IPC分类号： C23C16/458
CPC分类号： C23C16/45568 , C23C16/4581 , C23C16/4586 , H01L21/6831 , H01L21/6833
摘要： Generally, an electrostatic chuck (102) having a dielectric coating is provided. In one embodiment, an electrostatic chuck (102) includes a support surface (106), a mounting surface (222) disposed opposite the support surface and at least one side (220) separating the support surface and the mounting surface which defines a support body. One or more conductive members (208) are disposed within the support body to generate an electrostatic attraction between the body and a substrate disposed thereon. A dielectric coating (224) is disposed on the mounting surface of the support body to minimize undesired current leakage therethrough. Optionally, the dielectric coating may be additionally disposed on one or more of the sides and/or the support surface.
摘要翻译：通常，提供具有电介质涂层的静电卡盘（102）。在一个实施例中，静电卡盘（102）包括支撑表面（106），与支撑表面相对设置的安装表面（222）和分离支撑表面和安装表面的至少一个侧面（220），该侧面限定支撑体。一个或多个导电构件（208）设置在支撑体内，以在主体和其上设置的基板之间产生静电吸引力。电介质涂层（224）设置在支撑体的安装表面上，以最小化通过其中的不期望的电流泄漏。可选地，电介质涂层可以另外设置在一个或多个侧面和/或支撑表面上。

9. 发明申请

WO2011037647A1 AUTOMATIC SUBSTRATE LOADING STATION 审中-公开
标题翻译：自动基座装载站
公开(公告)号：WO2011037647A1
公开(公告)日：2011-03-31
申请号：PCT/US2010/027938
申请日：2010-03-19
申请人： APPLIED MATERIALS, INC. , QUACH, David H. , ISHIKAWA, Tetsuya
发明人： QUACH, David H. , ISHIKAWA, Tetsuya
IPC分类号： H01L21/677 , H01L21/68 , B65G49/07
CPC分类号： C23C16/54 , H01L21/67161 , H01L21/67201 , H01L21/67207 , H01L21/67259 , H01L21/67748 , H01L21/67751 , H01L21/68 , H01L21/68764 , H01L21/68771
摘要： Embodiments of the present invention provide method and apparatus for automatically loading substrates to a substrate carrier tray. On embodiment of the present invention provides an automatic substrate loader comprises a cassette handling mechanism, a substrate aligner configured to align a substrate, and a carrier tray aligner. The automatic substrate loader further comprises a first robot configured to transfer substrates between the substrate aligner and the substrate storage cassettes, and a second robot configured to transfer substrates between the substrate aligner and the carrier tray disposed on the carrier tray aligner.
摘要翻译：本发明的实施例提供了用于将衬底自动加载到衬底托盘的方法和装置。在本发明的实施例中，提供一种自动基板装载器，其包括盒式处理机构，被配置为对准基板的基板对准器和载体盘对准器。自动基板装载器还包括第一机器人，其被配置为在基板对准器和基板存储盒之间传送基板，以及第二机器人，其被配置为在基板对准器和设置在托盘调准器上的托盘之间传送基板。

10. 发明申请

WO2011028527A3 IN-SITU DEPOSITION OF BATTERY ACTIVE LITHIUM MATERIALS BY PLASMA SPRAYING 审中-公开
公开(公告)号：WO2011028527A3
公开(公告)日：2011-03-10
申请号：PCT/US2010/046498
申请日：2010-08-24
申请人： APPLIED MATERIALS, INC. , SHANG, Quanyuan , YANG, Lu , BROWN, Karl M. , OLGADO, Donald J., K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert Z. , CHEN, Liang-Yuh
发明人： SHANG, Quanyuan , YANG, Lu , BROWN, Karl M. , OLGADO, Donald J., K. , PEBENITO, Victor , BOLANDI, Hooman , ISHIKAWA, Tetsuya , BACHRACH, Robert Z. , CHEN, Liang-Yuh
IPC分类号： C23C4/12 , C23C4/04 , C23C4/18 , B05D1/04 , B05D3/00 , B05D7/14
摘要： A method and apparatus for forming an electrochemical layer of a thin film battery is provided. A precursor mixture comprising precursor particles dispersed in a carrying medium is activated in an activation chamber by application of an electric field to ionize at least a portion of the precursor mixture. The activated precursor mixture is then mixed with a combustible gas mixture to add thermal energy to the precursor particles, converting them to nanocrystals, which deposit on a substrate. A second precursor may be blended with the nanocrystals as they deposit on the surface to enhance adhesion and conductivity

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