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1. 发明公开

EP3488464A1 HEATING MODULATORS TO IMPROVE EPI UNIFORMITY TUNING 有权
公开(公告)号：EP3488464A1
公开(公告)日：2019-05-29
申请号：EP17831700.4
申请日：2017-07-18
申请人： Applied Materials, Inc.
发明人： LAU, Shu-Kwan , KUMAR, Surajit , RANISH, Joseph M. , YE, Zhiyuan , SHAH, Kartik , SAMIR, Mehmet Tugrul , SANCHEZ, Errol Antonio C.
IPC分类号： H01L21/67 , H01L21/02

2. 发明公开

EP4238124A1 METHOD AND SYSTEM FOR FORELINE DEPOSITION DIAGNOSTICS AND CONTROL 审中-实审
公开(公告)号：EP4238124A1
公开(公告)日：2023-09-06
申请号：EP21887143.2
申请日：2021-09-22
申请人： Applied Materials, Inc.
发明人： MORADIAN, Ala , HILKENE, Martin A. , ZHU, Zuoming , SANCHEZ, Errol Antonio C. , MARATH SANKARATHODI, Bindusagar , LIU, Patricia M. , SRIVASTAVA, Surendra Singh
IPC分类号： H01L21/67 , C23C16/44 , C23C16/52 , G06N20/00

3. 发明公开

EP4214762A1 THREE COLOR LIGHT SOURCES INTEGRATED ON A SINGLE WAFER 审中-实审
公开(公告)号：EP4214762A1
公开(公告)日：2023-07-26
申请号：EP21870000.3
申请日：2021-09-08
申请人： Applied Materials, Inc.
发明人： CHUDZIK, Michael , SANCHEZ, Errol Antonio C.
IPC分类号： H01L33/08 , H01L33/20 , H01L33/00 , H01L33/32 , H01L27/15

4. 发明公开

EP4107780A1 STRUCTURE AND MATERIAL ENGINEERING METHODS FOR OPTOELECTRONIC DEVICES SIGNAL TO NOISE RATIO ENHANCEMENT 审中-实审
公开(公告)号：EP4107780A1
公开(公告)日：2022-12-28
申请号：EP21757368.2
申请日：2021-01-25
申请人： Applied Materials, Inc.
发明人： CHEN, Papo , CHU, Schubert S. , SANCHEZ, Errol Antonio C. , BOLAND, John Timothy , YE, Zhiyuan , WASHINGTON, Lori , TAO, Xianzhi , HUANG, Yi-Chiau , WU, Chen-Ying
IPC分类号： H01L27/146

5. 发明公开

EP4138121A1 DIODE LASER FOR WAFER HEATING FOR EPI PROCESSES 审中-实审
公开(公告)号：EP4138121A1
公开(公告)日：2023-02-22
申请号：EP22198121.0
申请日：2016-10-07
申请人： Applied Materials, Inc.
发明人： CHU, Schubert S. , HOLMGREN, Douglas E. , SHAH, Kartik , GAJENDRA, Palamurali , MYO, Nyi O. , RAO, Preetham , BAUTISTA, Kevin Joseph , YE, Zhiyuan , HILKENE, Martin A. , SANCHEZ, Errol Antonio C. , COLLINS, Richard O.
IPC分类号： H01L21/67 , H01L21/683 , H01L21/324 , H01L29/861 , H01J37/32
摘要： A process chamber, comprising: a first transmissive member (112); a second transmissive member (114); a substrate support (102) disposed between the first transmissive member (112) and the second transmissive member (114); a first plurality of heating elements (104) disposed over the first transmissive member (112), wherein the first transmissive member (112) is disposed between the first plurality of heating elements (104) and the substrate support (102); a lid (116) disposed over the first plurality of heating elements (104); a support member (132) disposed on the lid (116); a support block (614) disposed on the support member (132); and a spot heating source assembly (108) disposed on the support block (614), wherein the spot heating source assembly (108) comprises a radiant spot heating source pointed at the substrate support (102).

6. 发明申请

WO2021167752A1 STRUCTURE AND MATERIAL ENGINEERING METHODS FOR OPTOELECTRONIC DEVICES SIGNAL TO NOISE RATIO ENHANCEMENT 审中-公开
公开(公告)号：WO2021167752A1
公开(公告)日：2021-08-26
申请号：PCT/US2021/014916
申请日：2021-01-25
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Papo , CHU, Schubert S. , SANCHEZ, Errol Antonio C. , BOLAND, John Timothy , YE, Zhiyuan , WASHINGTON, Lori , TAO, Xianzhi , HUANG, Yi-Chiau , WU, Chen-Ying
IPC分类号： H01L27/146
摘要： A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

7. 发明申请

WO2017146879A1 METHOD FOR INTER-CHAMBER PROCESS 审中-公开
标题翻译：室内过程的方法
公开(公告)号：WO2017146879A1
公开(公告)日：2017-08-31
申请号：PCT/US2017/015852
申请日：2017-01-31
申请人： APPLIED MATERIALS, INC.
发明人： BAO, Xinyu , SANCHEZ, Errol Antonio C. , YE, Zhiyuan , BAN, Keun-Yong
IPC分类号： H01L21/02 , H01L21/205 , H01L21/67 , H01L21/20
CPC分类号： H01L21/02658 , H01L21/02538 , H01L21/67098 , H01L21/67115 , H01L21/67196 , H01L21/67207
摘要： Embodiments described herein generally relate to a substrate processing system, such as an etch processing system. In one embodiment, a method of processing a substrate is disclosed herein. The method includes removing a native oxide from a surface of the substrate, baking the substrate in a pre-treatment thermal chamber such that double atomic steps are formed on the surface of the substrate, and forming an epitaxial layer on the substrate after the substrate is baked.
摘要翻译：这里描述的实施例一般涉及诸如蚀刻处理系统的基板处理系统。在一个实施例中，本文公开了一种处理基板的方法。该方法包括从基板的表面去除自然氧化物，在预处理热腔室中烘烤基板，使得在基板的表面上形成双原子台阶，并且在基板为基板之后在基板上形成外延层烤。

8. 发明申请

WO2017091345A1 NEW MATERIALS FOR TENSILE STRESS AND LOW CONTACT RESISTANCE AND METHOD OF FORMING 审中-公开
标题翻译：拉伸应力和低接触电阻的新材料及成形方法
公开(公告)号：WO2017091345A1
公开(公告)日：2017-06-01
申请号：PCT/US2016/060806
申请日：2016-11-07
申请人： APPLIED MATERIALS, INC.
发明人： YE, Zhiyuan , BAO, Xintyu , SANCHEZ, Errol Antonio C. , LI, Xuebin
IPC分类号： H01L21/205 , H01L21/02 , H01L29/78
CPC分类号： H01L29/7849 , H01L21/02381 , H01L21/02521 , H01L21/0262 , H01L21/02658 , H01L29/0847 , H01L29/24 , H01L29/66477
摘要： The present disclosure generally relate to methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed germanium arsenic layer. The method includes heating a substrate disposed within a processing chamber, wherein the substrate comprises silicon, and exposing a surface of the substrate to a germanium-containing gas and an arsenic-containing gas to form a germanium arsenic alloy having an arsenic concentration of 4.5x1020 atoms per cubic centimeter or greater on the surface.
摘要翻译：本公开总体上涉及用于在半导体器件上形成外延层的方法，包括形成拉伸应力锗砷层的方法。该方法包括加热布置在处理室内的衬底，其中衬底包括硅，并且使衬底的表面暴露于含锗气体和含砷气体以形成砷浓度为4.5×10 20的锗砷合金表面上每立方厘米或更大的原子。

9. 发明申请

WO2015179032A1 LIGHT PIPE STRUCTURE WINDOW FOR LOW PRESSURE THERMAL PROCESSES 审中-公开
标题翻译：用于低压热工艺的轻质管道结构窗口
公开(公告)号：WO2015179032A1
公开(公告)日：2015-11-26
申请号：PCT/US2015/024735
申请日：2015-04-07
申请人： APPLIED MATERIALS, INC.
发明人： BRILLHART, Paul , RANISH, Joseph M. , HUNTER, Aaron Muir , TONG, Edric , MACK, James Francis , LO, Kin Pong , SANCHEZ, Errol Antonio C. , YE, Zhiyuan , CHANG, Anzhong
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： H01L21/67115 , G02B6/08 , H01L21/2686 , H01L21/67201 , H01L21/68742 , H05B3/0047
摘要： Embodiments disclosed herein relate to a light pipe structure for thermal processing of semiconductor substrates. In one embodiment, a light pipe window structure for use in a thermal process chamber includes a transparent plate, and a plurality of light pipe structures formed in a transparent material that is coupled to the transparent plate, each of the plurality of light pipe structures comprising a reflective surface and having a longitudinal axis disposed in a substantially perpendicular relation to a plane of the transparent plate.
摘要翻译：本文公开的实施例涉及用于半导体衬底的热处理的光管结构。在一个实施例中，用于热处理室的光管窗结构包括透明板和形成在透明材料中的多个光管结构，所述多个光管结构联接到透明板，所述多个光管结构中的每一个包括反射表面并且具有设置在与透明板的平面基本上垂直的方向上的纵向轴线。

10. 发明申请

WO2015026491A1 APPARATUS FOR IMPURITY LAYERED EPITAXY 审中-公开
标题翻译：装置外观细腻
公开(公告)号：WO2015026491A1
公开(公告)日：2015-02-26
申请号：PCT/US2014/048506
申请日：2014-07-28
申请人： APPLIED MATERIALS, INC.
发明人： SANCHEZ, Errol Antonio C. , SRINIVASAN, Swaminathan
IPC分类号： H01L21/02 , H01L21/683
CPC分类号： C30B25/08 , C30B25/105 , C30B25/12 , C30B25/14 , C30B29/06 , C30B29/36 , C30B29/52
摘要： Embodiments of the disclosure relate to an apparatus for processing a semiconductor substrate. The apparatus includes a process chamber having a substrate support for supporting a substrate, a lower dome and an upper dome opposing the lower dome, a plurality of gas injects disposed within a sidewall of the process chamber. The apparatus includes a gas delivery system coupled to the process chamber via the plurality of gas injects, the gas delivery system includes a gas conduit providing one or more chemical species to the plurality of gas injects via a first fluid line, a dopant source providing one or more dopants to the plurality of gas injects via a second fluid line, and a fast switching valve disposed between the second fluid line and the process chamber, wherein the fast switching valve switches flowing of the one or more dopants between the process chamber and an exhaust.
摘要翻译：本公开的实施例涉及一种用于处理半导体衬底的装置。该装置包括具有用于支撑基板的基板支撑件，下圆顶和与下圆顶对置的上圆顶的处理室，设置在处理室的侧壁内的多个气体注入。该装置包括通过多个气体注入连接到处理室的气体输送系统，气体输送系统包括通过第一流体管线向多个气体注入提供一种或多种化学物质的气体导管，提供一种或更多的掺杂剂经由第二流体管线注入多个气体;以及快速切换阀，其设置在第二流体管线和处理室之间，其中快速切换阀切换处理室和处理室之间的一种或多种掺杂剂的流动排气。

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