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1. 发明申请

WO2012018557A2 SYMMETRIC VHF PLASMA POWER COUPLER WITH ACTIVE UNIFORMITY STEERING 审中-公开
标题翻译：具有主动均匀转向的对称甚高频等离子功率耦合器
公开(公告)号：WO2012018557A2
公开(公告)日：2012-02-09
申请号：PCT/US2011/045023
申请日：2011-07-22
申请人： APPLIED MATERIALS, INC. , COLLINS, Kenneth, S. , CHEN, Zhigang , RAMASWAMY, Kartik , CARDUCCI, James, D. , RAUF, Shahid , NGUYEN, Andrew
发明人： COLLINS, Kenneth, S. , CHEN, Zhigang , RAMASWAMY, Kartik , CARDUCCI, James, D. , RAUF, Shahid , NGUYEN, Andrew
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32577 , H05H1/46 , H05H2001/4622
摘要： A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.
摘要翻译：同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

2. 发明申请

WO2009094447A1 METHOD AND APPARATUS FOR ENHANCING FLOW UNIFORMITY IN A PROCESS CHAMBER 审中-公开
标题翻译：用于提高过程室流量均匀性的方法和装置
公开(公告)号：WO2009094447A1
公开(公告)日：2009-07-30
申请号：PCT/US2009/031689
申请日：2009-01-22
申请人： APPLIED MATERIALS, INC. , BERA, Kallol , CARDUCCI, James, D. , BALAKRISHNA, Ajit , RAUF, Shahid , COLLINS, Kenneth, S. , NGUYEN, Andrew , NOORBAKHSH, Hamid
发明人： BERA, Kallol , CARDUCCI, James, D. , BALAKRISHNA, Ajit , RAUF, Shahid , COLLINS, Kenneth, S. , NGUYEN, Andrew , NOORBAKHSH, Hamid
IPC分类号： H01L21/00 , H01L21/02 , H01L21/205 , H01L21/3065 , H01L21/20 , H01L21/30
CPC分类号： H01J37/32834 , C23C16/4412 , H01L21/67017 , H01L21/67167 , H01L21/6719
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.
摘要翻译：本文提供了处理衬底的方法和装置。在一些实施例中，用于处理衬底的设备可以包括具有与其相连的内部体积和排气系统的处理室，其中排气系统包括多个第一管道，每个第一管道具有适于从内部处理室的体积。泵送气室连接到多个第一管道中的每一个。泵送气室具有适于泵送来自腔室的排气的泵送口。多个第一导管的每个入口与泵送端口之间的电导基本相当。

3. 发明申请

WO2011017333A2 APPARATUS AND METHOD FOR LOW-K DIELECTRIC REPAIR 审中-公开
标题翻译：用于低K电介质修复的装置和方法
公开(公告)号：WO2011017333A2
公开(公告)日：2011-02-10
申请号：PCT/US2010/044263
申请日：2010-08-03
申请人： APPLIED MATERIALS, INC. , CARDUCCI, James, D. , NEMANI, Srinivas, D. , TANG, Hairong , SUN, Hui , MARKOVSKY, Igor , GOLD, Ezra, R. , KAYA, Iwalani, S. , YIEH, Ellie, Y. , ZHANG, Chunlei , COLLINS, Kenneth, S. , ARMACOST, Michael, D. , BALAKRISHNA, Ajit , LILL, Thorsten, B.
发明人： CARDUCCI, James, D. , NEMANI, Srinivas, D. , TANG, Hairong , SUN, Hui , MARKOVSKY, Igor , GOLD, Ezra, R. , KAYA, Iwalani, S. , YIEH, Ellie, Y. , ZHANG, Chunlei , COLLINS, Kenneth, S. , ARMACOST, Michael, D. , BALAKRISHNA, Ajit , LILL, Thorsten, B.
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , H01L21/31058 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/76814 , H01L21/76825 , H01L21/76831
摘要： A method, a system and a computer readable medium for integrated in- vacuo repair of low-k dielectric thin films damaged by etch and/or strip processing. A repair chamber is integrated onto a same platform as a plasma etch and/or strip chamber to repair a low-k dielectric thin film without breaking vacuum between the damage event and the repair event. UV radiation may be provided on the integrated etch/repair platform in any combination of before, after, or during the low-k repair treatment to increase efficacy of the repair treatment and/or stability of repair.
摘要翻译：一种方法，系统和计算机可读介质，用于通过蚀刻和/或条带处理损坏的低k电介质薄膜的综合真空修复。修复室与等离子体蚀刻和/或剥离室集成在相同的平台上，以修复低k电介质薄膜，而不破坏损坏事件和修复事件之间的真空。 UV辐射可以在低k修复处理之前，之后或期间以任何组合提供在综合蚀刻/修复平台上，以增加修复处理的效力和/或修复的稳定性。

4. 发明申请

WO2009126576A2 LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE 审中-公开
标题翻译：具有集成流量均衡器和改进的导体的下层
公开(公告)号：WO2009126576A2
公开(公告)日：2009-10-15
申请号：PCT/US2009/039662
申请日：2009-04-06
申请人： APPLIED MATERIALS, INC. , CARDUCCI, James, D. , NGUYEN, Andrew , BALAKRISHNA, Ajit , KUTNEY, Michael, C.
发明人： CARDUCCI, James, D. , NGUYEN, Andrew , BALAKRISHNA, Ajit , KUTNEY, Michael, C.
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
摘要翻译：等离子体处理室具有具有集成流量均衡器的下衬套。在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

5. 发明申请

WO2009097181A2 ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER 审中-公开
标题翻译：具有流量均衡器和下层的蚀刻室
公开(公告)号：WO2009097181A2
公开(公告)日：2009-08-06
申请号：PCT/US2009/030708
申请日：2009-01-12
申请人： APPLIED MATERIALS, INC. , CARDUCCI, James, D. , LO, Kin Pong , BERA, Kallol , KUTNEY, Michael, C. , MILLER, Matthew, L.
发明人： CARDUCCI, James, D. , LO, Kin Pong , BERA, Kallol , KUTNEY, Michael, C. , MILLER, Matthew, L.
CPC分类号： H01J37/32623 , H01J37/32467
摘要： A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.
摘要翻译：具有降低的流量均衡器和下腔室衬套的等离子体处理室。在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。

6. 发明申请

WO2009089244A1 SHOWERHEAD INSULATOR AND ETCH CHAMBER LINER 审中-公开
标题翻译：淋浴绝缘子和蚀刻室内衬
公开(公告)号：WO2009089244A1
公开(公告)日：2009-07-16
申请号：PCT/US2009/030266
申请日：2009-01-07
申请人： APPLIED MATERIALS, INC. , CARDUCCI, James, D. , REGELMAN, Olga
发明人： CARDUCCI, James, D. , REGELMAN, Olga
IPC分类号： H01L21/3065 , H01L21/00 , H01L21/02
CPC分类号： H01J37/32633 , H01J37/3244 , H01J37/32449 , H01J37/32477
摘要： The present invention generally comprises a showerhead insulator for electrically isolating a showerhead assembly from a processing chamber wall, a chamber liner assembly for lining a processing chamber, a lower chamber liner for lining an evacuation area of a processing chamber, and a flow equalizer for ensuring a uniform evacuation of a processing chamber. When processing a substrate within an etching chamber, the showerhead needs to be electrically isolated from ground. A showerhead insulator may insulate the showerhead from ground while also preventing plasma from entering the volume that it occupies. A chamber liner may protect the chamber walls from contamination and reduce chamber cleaning. A flow equalizer will permit processing gases to be evenly pulled into the evacuation channel rather than a disproportionate flow into the evacuation channel. A lower liner can aid in uniformly drawing the vacuum and protecting the chamber walls from contamination.
摘要翻译：本发明通常包括用于将喷头组件与处理室壁电隔离的喷头绝缘体，用于衬里处理室的腔室衬套组件，用于衬里处理室的抽空区域的下室衬套和用于确保均匀排出处理室。当在蚀刻室内处理衬底时，喷头需要与地电隔离。喷头绝缘体可以将喷头与地面隔离，同时也防止等离子体进入其占据的体积。腔室衬垫可以保护腔室壁免受污染并减少腔室清洁。流量均衡器将允许将处理气体均匀地拉入抽空通道，而不是不成比例的流入排气通道。下层衬垫有助于均匀地抽真空并保护室壁免受污染。

7. 发明申请

WO2003038870A1 CONFIGURABLE SINGLE SUBSTRATE WET-DRY INTEGRATED CLUSTER CLEANER 审中-公开
标题翻译：可配置单基底干湿整体式集尘清洗机
公开(公告)号：WO2003038870A1
公开(公告)日：2003-05-08
申请号：PCT/US2002/030854
申请日：2002-09-30
申请人： APPLIED MATERIALS, INC.
发明人： LUSCHER, Paul, E. , CARDUCCI, James, D. , SALIMIAN, Siamak , WELCH, Michael, D.
IPC分类号： H01L21/00
CPC分类号： H01L21/67051 , B08B3/04 , H01L21/67028 , Y10S134/902 , Y10S438/905
摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber (102) defines a processing cavity (114) adapted to accommodate a substrate (616) therein. In one embodiment, the cleaning chamber (102) includes a chamber body having a processing cavity (114) defined therein. A substrate (616) is disposed in the processing cavity (114) without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity (114) at an angle relative to a radial line of the substrate (616) to induce and/or control rotation of the substrate during a cleaning and drying process.
摘要翻译：本发明提供一种清洗基板的方法和装置。清洁室（102）限定适于容纳其中的基底（616）的处理空腔（114）。在一个实施例中，清洁室（102）包括具有限定在其中的处理空腔（114）的室主体。衬底（616）设置在处理空腔（114）中，而不通过伯努利效应和/或通过衬底上方和/或下方的流体衬垫接触其它腔室部件。流体相对于基底（616）的径向线以一定角度流入处理空腔（114），以在清洁和干燥过程中引起和/或控制基底的旋转。

8. 发明公开

EP4214740A1 PLASMA CHAMBER WITH A MULTIPHASE ROTATING MODULATED CROSS-FLOW 审中-实审
公开(公告)号：EP4214740A1
公开(公告)日：2023-07-26
申请号：EP21869955.1
申请日：2021-08-17
申请人： Applied Materials, Inc.
发明人： COLLINS, Kenneth, S. , RICE, Michael, R. , CARDUCCI, James, D. , RAMASWAMY, Kartik , BALAKRISHNA, Ajit , RAUF, Shahid , KENNEY, Jason
IPC分类号： H01J37/32

9. 发明公开

EP1334514A2 DIELECTRIC ETCH CHAMBER WITH EXPANDED PROCESS WINDOW 审中-公开
标题翻译：与扩展的进程窗口介质刻蚀室
公开(公告)号：EP1334514A2
公开(公告)日：2003-08-13
申请号：EP01993018.9
申请日：2001-11-01
申请人： Applied Materials, Inc.
发明人： CARDUCCI, James, D. , NOORBAKHSH, Hamid , LEE, Evans, Y. , PU, Bryan, Y. , SHAN, Hongqing , BJORKMAN, Claes , SALIMIAN, Siamak , LUSCHER, Paul, E. , WELCH, Michael, D. , LIU, Jingbao , KOMATSU, Takehiko , DOAN, Kenny, L. , CHANG, Melody , WANG, Zhuxu , KIM, Yunsang , WANG, Ruiping
IPC分类号： H01L21/68
CPC分类号： H01L21/6875 , H01J37/32522 , H01L21/31116 , H01L21/67069 , H01L21/6833 , H01L21/68792 , H01L21/76802 , H01L21/76807 , H01L21/76897 , H01L2924/3011
摘要： A thermally controlled plasma etch chamber with an expanded processing window has a thermally controlled chamber liner, thermally differentiated gas inlets, a high evacuation capability, a magnetic confinement and adhesion improving surface textures. The internal wall surfaces of the chamber are conditioned according to one or several surface texturing treatments adapted to improve by-product adhesion thereon. The expanded flow capability enables short residence. A fluid through the one or more fluid passages formed at least partially in the chamber liner may comprise a first liner, a second liner or both a first liner and a second liner. A plurality of gas nozzles or mini-distribution plates having a small thermal mass and thermally differentiated from the temperature controlled liner or liners is introduce process gases in to the processing chamber. A plasma confinement system prevents plasma and by products from extering the pumping channel or exhaust system components. The substrate support includes an electrostatic chuck, dual zone backside cooling, and a robust electrode. The support comprises a ceramic substrate support of predetermined resistivity, a support plate having a fluid channel, and a thermally conductive layer inbetween which may comprise a presure sensitive acrylic adhesive and a metal or metal alloy.

10. 发明公开

EP1290720A1 CONFIGURABLE SINGLE SUBSTRATE WET-DRY INTEGRATED CLUSTER CLEANER 审中-公开
标题翻译：可配置建有室清洗装置各种基质干湿处理
公开(公告)号：EP1290720A1
公开(公告)日：2003-03-12
申请号：EP01946369.4
申请日：2001-06-15
申请人： Applied Materials, Inc.
发明人： LUSCHER, Paul, E. , CARDUCCI, James, D. , SALIMIAN, Siamak
IPC分类号： H01L21/00 , H01L21/306
CPC分类号： H01L21/67017 , B08B3/04 , H01L21/67028 , Y10S134/902
摘要： The present invention provides a method and an apparatus for cleaning substrates. The cleaning chamber defines a processing cavity adapted to accommodate a substrate therein. In one embodiment, the cleaning chamber includes an upper plate, a lower plate and a gas manifold disposed there between. A substrate is disposed in the processing cavity without contacting other chamber components by a Bernoulli effect and/or by a fluid cushion above and/or below the substrate. Fluid is flowed into the processing cavity at an angle relative to a radial line of the substrate to induce rotation of the substrate during a cleaning and drying process. A cleaning process involves flowing one or more fluids onto a surface of the substrate during its rotation. One-sided and two-sided cleaning and drying is provided.

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