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1. 发明申请

WO2009097181A2 ETCHING CHAMBER HAVING FLOW EQUALIZER AND LOWER LINER 审中-公开
标题翻译：具有流量均衡器和下层的蚀刻室
公开(公告)号：WO2009097181A2
公开(公告)日：2009-08-06
申请号：PCT/US2009/030708
申请日：2009-01-12
申请人： APPLIED MATERIALS, INC. , CARDUCCI, James, D. , LO, Kin Pong , BERA, Kallol , KUTNEY, Michael, C. , MILLER, Matthew, L.
发明人： CARDUCCI, James, D. , LO, Kin Pong , BERA, Kallol , KUTNEY, Michael, C. , MILLER, Matthew, L.
CPC分类号： H01J37/32623 , H01J37/32467
摘要： A plasma processing chamber having a lowered flow equalizer and a lower chamber liner. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. By equalizing the flow of the processing gases evacuated from the chamber, a more uniform etching may occur. By electrically coupling the flow equalizer to the chamber liners, the RF return path from the flow equalizer may run along the chamber liners and hence, reduce the amount of plasma drawn below the substrate during processing.
摘要翻译：具有降低的流量均衡器和下腔室衬套的等离子体处理室。在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。通过均衡从室抽出的处理气体的流动，可能发生更均匀的蚀刻。通过将流量均衡器电耦合到室衬套，来自流量均衡器的RF返回路径可以沿着室衬套运行，并且因此减少在处理期间在衬底下方拉制的等离子体的量。

2. 发明申请

WO2011090626A2 DIELECTRIC FILM GROWTH WITH RADICALS PRODUCED USING FLEXIBLE NITROGEN/HYDROGEN RATIO 审中-公开
标题翻译：使用灵活的氮/氢比生产自由基的介电膜生长
公开(公告)号：WO2011090626A2
公开(公告)日：2011-07-28
申请号：PCT/US2010/060852
申请日：2010-12-16
申请人： APPLIED MATERIALS, INC. , LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
发明人： LIANG, Jingmei , CHEN, Xiaolin , MILLER, Matthew, L. , INGLE, Nitin, K. , VENKATARAMAN, Shankar
IPC分类号： H01L21/31 , H01L21/205 , H01L21/324
CPC分类号： H01L21/02164 , C23C16/345 , C23C16/452 , C23C16/56 , H01J37/32357 , H01L21/0217 , H01L21/02274 , H01L21/02326 , H01L21/02337
摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
摘要翻译：描述了形成电介质层的方法。该方法可以包括将含硅前体与自由基氮前体混合并在衬底上沉积电介质层的步骤。通过使氢气（H 2）和氮气（N 2）流入等离子体中以便调节氮/氢比率，在远程等离子体中形成自由基氮前体。介电层最初是含硅和氮的层，其可通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

3. 发明申请

WO2010011643A3 APPARATUS FOR MULTIPLE FREQUENCY POWER APPLICATION 审中-公开
公开(公告)号：WO2010011643A3
公开(公告)日：2010-01-28
申请号：PCT/US2009/051240
申请日：2009-07-21
申请人： APPLIED MATERIALS, INC. , SHANNON, Steven, C. , YANG, Jang-Gyoo , MILLER, Matthew, L. , RAMASWAMY, Kartik , CRUSE, James, P.
发明人： SHANNON, Steven, C. , YANG, Jang-Gyoo , MILLER, Matthew, L. , RAMASWAMY, Kartik , CRUSE, James, P.
IPC分类号： H05H1/36 , H05H1/24 , H05H1/46
摘要： Apparatus and methods are provided for a power matching apparatus for use with a processing chamber. In one aspect of the invention, a power matching apparatus is provided including a first RF power input coupled to a first adjustable capacitor, a second RF power input coupled to a second adjustable capacitor, a power junction coupled to the first adjustable capacitor and the second adjustable capacitor, a receiver circuit coupled to the power junction, a high voltage filter coupled to the power junction and the high voltage filter has a high voltage output, a voltage/current detector coupled to the power junction and a RF power output connected to the voltage/current detector.

4. 发明申请

WO2004023510A2 CAPACITIVELY COUPLED PLASMA REACTOR WITH UNIFORM RADIAL DISTRIBUTION OF PLASMA 审中-公开
标题翻译：具有均匀的等离子体辐射分布的电容耦合等离子体反应器
公开(公告)号：WO2004023510A2
公开(公告)日：2004-03-18
申请号：PCT/US2003/027538
申请日：2003-09-03
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Jang, Gyoo , HOFFMAN, Daniel, J. , CARDUCCI, James, D. , BUCHBERGER, Douglas, A., Jr. , MILLER, Matthew, L. , CHIANG, Kang-Lie , DELGADINO, Gerardo, A.
IPC分类号： H01J
CPC分类号： H01J37/32082 , H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor wafer includes a side wall and an overhead ceiling defining a chamber, a workpiece support cathode within the chamber having a working surface facing the ceiling for supporting a semiconductor workpiece, process gas inlets for introducing a process gas into the chamber and an RF bias power generator having a bias power frequency. There is a bias power feed point at the working surface and an RF conductor is connected between the RF bias power generator and the bias power feed point at the working surface. A dielectric sleeve surrounds a portion of the RF conductor, the sleeve having an axial length along the RF conductor, a dielectric constant and an axial location along the RF conductor, the length, dielectric constant and location of the sleeve being such that the sleeve provides a reactance that enhances plasma ion density uniformity over the working surface. In accordance with a further aspect, the reactor can include an annular RF coupling ring having an inner diameter corresponding generally to a periphery of the workpiece, the RF coupling ring extending a sufficient portion of a distance between the working surface and the overhead electrode to enhance plasma ion density near a periphery of the workpiece.
摘要翻译：用于处理半导体晶片的等离子体反应器包括限定腔室的侧壁和顶棚顶板，腔室内的工件支撑阴极具有面向天花板的用于支撑半导体工件的工作表面，用于将工艺气体引入室和具有偏置功率频率的RF偏置功率发生器。在工作表面有一个偏置的馈电点，RF导体连接在RF偏置发电机和工作表面的偏置电源馈电点之间。介质套管围绕RF导体的一部分，套筒具有沿着RF导体的轴向长度，介电常数和沿着RF导体的轴向位置，套筒的长度，介电常数和位置使得套筒提供一种提高工作表面等离子体离子密度均匀性的电抗。根据另一方面，反应器可以包括具有大致对应于工件周边的内径的环形RF耦合环，RF耦合环在工作表面和顶置电极之间延伸足够的距离部分以增强等离子体离子密度在工件周边附近。

5. 发明申请

WO2003100818A1 CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL 审中-公开
标题翻译：具有磁性等离子体控制的电容耦合等离子体反应器
公开(公告)号：WO2003100818A1
公开(公告)日：2003-12-04
申请号：PCT/US2003/016559
申请日：2003-05-22
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , MILLER, Matthew, L. , YANG, Jang, Gyoo , CHAE, Heeyoep , BARNES, Michael , ISHIKAWA, Tetsuya , YE, Yan
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。所述反应器还包括至少邻近所述天花板的顶部螺线管电磁体，所述架空螺线管电磁体，所述天花板，所述侧壁和所述工件支撑件沿着公共对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

6. 发明申请

WO2003055287A2 PLASMA REACTOR WITH OVERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
标题翻译：具有超声波射频电极的等离子体反应器被调谐到具有ARCING抑制的等离子体
公开(公告)号：WO2003055287A2
公开(公告)日：2003-07-03
申请号：PCT/US2002/030407
申请日：2002-09-25
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YIN, Gerald, Zheyao , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H05H1/00
CPC分类号： H01J37/32082 , H01J37/32183
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.
摘要翻译：一种用于处理半导体工件的等离子体反应器，包括具有室壁并包含用于保持半导体工件的工件支撑件的反应室，覆盖所述工件支撑件的顶部电极，包括所述室壁的一部分的电极，RF发电机用于将所述发电机的频率的功率提供给所述顶置电极并且能够将所述腔室内的等离子体保持在期望的等离子体离子密度水平。顶置电极具有电容，使得在所述室中以所述期望等离子体离子密度形成的所述架空电极和等离子体以电极 - 等离子体共振频率共振，所述发生器的所述频率至少接近所述电极 - 等离子体共振频率。反应器还包括形成在面向所述工件支撑件的所述顶置电极的表面上的绝缘层，所述RF发电机和所述架空电极之间的电容绝缘层，以及覆盖并接触所述顶部电极的表面的金属泡沫层，远离所述工件支撑件。

7. 发明申请

WO2003036680A1 MERIE PLASMA REACTOR WITH SHOWERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
标题翻译： MERIE等离子体反应器，带有SHOWERHEAD RF电极，被调谐到等离子体，具有防止抑制
公开(公告)号：WO2003036680A1
公开(公告)日：2003-05-01
申请号：PCT/US2002/030399
申请日：2002-09-24
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H01J37/32
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32183 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaing a plasma within the chamber at a desired plasma ion density level. The overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve circulating magnetic field which stirs the plasma to improve plasma on density districution uniformity.
摘要翻译：一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以发电机到顶置电极并且能够以期望的等离子体离子密度水平维持腔室内的等离子体。以期望的等离子体离子密度在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。反应器还包括一组围绕晶片表面的等离子体处理区域的MERIE磁体，其产生缓慢循环的磁场，其搅拌等离子体以改善循环磁场，其搅拌等离子体以改善等离子体的密度分布均匀性。

8. 发明公开

EP1506563A1 CAPACITIVELY COUPLED PLASMA REACTOR WITH MAGNETIC PLASMA CONTROL 审中-公开
标题翻译：与血浆的磁控制电容耦合等离子体反应器
公开(公告)号：EP1506563A1
公开(公告)日：2005-02-16
申请号：EP03731374.9
申请日：2003-05-22
申请人： Applied Materials, Inc.
发明人： HOFFMAN, Daniel, J. , MILLER, Matthew, L. , YANG, Jang, Gyoo , CHAE, Heeyoep , BARNES, Michael , ISHIKAWA, Tetsuya , YE, Yan
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.

9. 发明申请

WO2003055287A3 PLASMA REACTOR WITH OVERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
公开(公告)号：WO2003055287A3
公开(公告)日：2003-07-03
申请号：PCT/US2002/030407
申请日：2002-09-25
申请人： APPLIED MATERIALS, INC.
发明人： HOFFMAN, Daniel, J. , YIN, Gerald, Zheyao , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H01J37/32
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

10. 发明公开

EP1459351A2 PLASMA REACTOR WITH OVERHEAD RF ELECTRODE TUNED TO THE PLASMA WITH ARCING SUPPRESSION 审中-公开
标题翻译：具有匹配的等离子体，TOP RF LEAD侧翻抑制的等离子体反应器
公开(公告)号：EP1459351A2
公开(公告)日：2004-09-22
申请号：EP02773574.5
申请日：2002-09-25
申请人： Applied Materials, Inc.
发明人： HOFFMAN, Daniel, J. , YIN, Gerald, Zheyao , YE, Yan , KATZ, Dan , BUCHBERGER, Douglas, A., Jr. , ZHAO, Xiaoye , CHIANG, Kang-Lie , HAGEN, Robert, B. , MILLER, Matthew, L.
IPC分类号： H01J37/32
CPC分类号： H01J37/32082 , H01J37/32183
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor workpiece, an overhead electrode overlying said workpiece support, the electrode comprising a portion of said chamber wall, an RF power generator for supplying power at a frequency of said generator to said overhead electrode and capable of maintaining a plasma within said chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that said overhead electrode and the plasma formed in said chamber at said desired plasma ion density resonate together at an electrode-plasma resonant frequency, said frequency of said generator being at least near said electrode-plasma resonant frequency. The reactor further includes an insulating layer formed on a surface of said overhead electrode facing said workpiece support, a capacitive insulating layer between said RF power generator and said overhead electrode, and a metal foam layer overlying and contacting a surface of said overhead electrode that faces away from said workpiece support.

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