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1. 发明申请

WO2009126576A2 LOWER LINER WITH INTEGRATED FLOW EQUALIZER AND IMPROVED CONDUCTANCE 审中-公开
标题翻译：具有集成流量均衡器和改进的导体的下层
公开(公告)号：WO2009126576A2
公开(公告)日：2009-10-15
申请号：PCT/US2009/039662
申请日：2009-04-06
申请人： APPLIED MATERIALS, INC. , CARDUCCI, James, D. , NGUYEN, Andrew , BALAKRISHNA, Ajit , KUTNEY, Michael, C.
发明人： CARDUCCI, James, D. , NGUYEN, Andrew , BALAKRISHNA, Ajit , KUTNEY, Michael, C.
IPC分类号： H05H1/34 , H01L21/3065
CPC分类号： H01L21/67069 , H01J37/32082 , H01J37/32495 , H01J37/32623 , Y10T428/13
摘要： A plasma processing chamber has a lower liner with an integrated flow equalizer. In an etching process, the processing gases may be unevenly drawn from the processing chamber which may cause an uneven etching of the substrate. The integrated flow equalizer is configured to equalize the flow of the processing gases evacuated from the chamber via the lower liner.
摘要翻译：等离子体处理室具有具有集成流量均衡器的下衬套。在蚀刻工艺中，处理气体可能不均匀地从处理室抽出，这可能导致基板的不均匀蚀刻。集成流量均衡器被配置为使从腔室经由下衬套排出的处理气体的流量相等。

2. 发明申请

WO2009094447A1 METHOD AND APPARATUS FOR ENHANCING FLOW UNIFORMITY IN A PROCESS CHAMBER 审中-公开
标题翻译：用于提高过程室流量均匀性的方法和装置
公开(公告)号：WO2009094447A1
公开(公告)日：2009-07-30
申请号：PCT/US2009/031689
申请日：2009-01-22
申请人： APPLIED MATERIALS, INC. , BERA, Kallol , CARDUCCI, James, D. , BALAKRISHNA, Ajit , RAUF, Shahid , COLLINS, Kenneth, S. , NGUYEN, Andrew , NOORBAKHSH, Hamid
发明人： BERA, Kallol , CARDUCCI, James, D. , BALAKRISHNA, Ajit , RAUF, Shahid , COLLINS, Kenneth, S. , NGUYEN, Andrew , NOORBAKHSH, Hamid
IPC分类号： H01L21/00 , H01L21/02 , H01L21/205 , H01L21/3065 , H01L21/20 , H01L21/30
CPC分类号： H01J37/32834 , C23C16/4412 , H01L21/67017 , H01L21/67167 , H01L21/6719
摘要： Methods and apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a process chamber having an inner volume and an exhaust system coupled thereto, wherein the exhaust system includes a plurality of first conduits, each first conduit having an inlet adapted to receive exhaust from the inner volume of the process chamber. A pumping plenum is coupled to each of the plurality of first conduits. The pumping plenum has a pumping port adapted to pump the exhaust from the chamber. The conductance between each inlet of the plurality of first conduits and the pumping port is substantially equivalent.
摘要翻译：本文提供了处理衬底的方法和装置。在一些实施例中，用于处理衬底的设备可以包括具有与其相连的内部体积和排气系统的处理室，其中排气系统包括多个第一管道，每个第一管道具有适于从内部处理室的体积。泵送气室连接到多个第一管道中的每一个。泵送气室具有适于泵送来自腔室的排气的泵送口。多个第一导管的每个入口与泵送端口之间的电导基本相当。

3. 发明申请

WO2012018557A2 SYMMETRIC VHF PLASMA POWER COUPLER WITH ACTIVE UNIFORMITY STEERING 审中-公开
标题翻译：具有主动均匀转向的对称甚高频等离子功率耦合器
公开(公告)号：WO2012018557A2
公开(公告)日：2012-02-09
申请号：PCT/US2011/045023
申请日：2011-07-22
申请人： APPLIED MATERIALS, INC. , COLLINS, Kenneth, S. , CHEN, Zhigang , RAMASWAMY, Kartik , CARDUCCI, James, D. , RAUF, Shahid , NGUYEN, Andrew
发明人： COLLINS, Kenneth, S. , CHEN, Zhigang , RAMASWAMY, Kartik , CARDUCCI, James, D. , RAUF, Shahid , NGUYEN, Andrew
IPC分类号： H05H1/46 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32577 , H05H1/46 , H05H2001/4622
摘要： A coaxial VHF power coupler includes conductive element inside a hollow cylindrical outer conductor of the power coupler and surrounding an axial section of a hollow cylindrical inner conductor of the power coupler. Respective plural motor drives contacting the hollow cylindrical outer conductor are connected to respective locations of the movable conductive element.
摘要翻译：同轴VHF功率耦合器包括在功率耦合器的中空圆柱形外导体内的导电元件，并且包围功率耦合器的中空圆柱形内导体的轴向部分。与中空圆柱形外部导体接触的多个电机驱动器连接到可移动导电元件的相应位置。

4. 发明申请

WO2009108568A2 GAS FLOW EQUALIZER PLATE SUITABLE FOR USE IN A SUBSTRATE PROCESS CHAMBER 审中-公开
标题翻译：气体流平衡板适用于基板工艺室
公开(公告)号：WO2009108568A2
公开(公告)日：2009-09-03
申请号：PCT/US2009/034533
申请日：2009-02-19
申请人： APPLIED MATERIALS, INC. , BALAKRISHNA, Ajit , RAUF, Shahid , NGUYEN, Andrew , WILLWERTH, Michael D. , TODOROW, Valentin D.
发明人： BALAKRISHNA, Ajit , RAUF, Shahid , NGUYEN, Andrew , WILLWERTH, Michael D. , TODOROW, Valentin D.
IPC分类号： H01L21/3065 , H01L21/02
CPC分类号： H01J37/32449 , H01J37/3244
摘要： A flow equalizer plate is provided for use in a substrate process chamber. The flow equalizer plate has an annular shape with a flow obstructing inner region, and a perforated outer region that permits the passage of a processing gas, but retains specific elements in the processing gas, such as active radicals or ions. The inner and outer regions have varying radial widths so as to balance a flow of processing gas over a surface of a substrate. In certain embodiments, the flow equalizer plate may be utilized to correct chamber flow asymmetries due to a lateral offset of an exhaust port relative to a center line of a substrate support between the process volume and the exhaust port.
摘要翻译：提供流量均衡器板用于衬底处理室。流量均衡器板具有流动阻挡内部区域的环形形状，以及允许处理气体通过但在处理气体中保留特定元素的穿孔外部区域，例如活性自由基或离子。内部和外部区域具有变化的径向宽度，以平衡处理气体在衬底表面上的流动。在某些实施例中，流量均衡器板可用于校正由于排气口相对于处理容积和排气口之间的衬底支撑件的中心线的横向偏移造成的室流动不对称性。

5. 发明申请

WO2011094143A2 APPARATUS FOR CONTROLLING TEMPERATURE UNIFORMITY OF A SHOWERHEAD 审中-公开
标题翻译：用于控制淋浴器的温度均匀性的装置
公开(公告)号：WO2011094143A2
公开(公告)日：2011-08-04
申请号：PCT/US2011/022202
申请日：2011-01-24
申请人： APPLIED MATERIALS, INC. , BERA, Kallol , CARDUCCI, James D. , NOORBAKHSH, Hamid , ELIZAGA, Larry D. , BUCHBERGER, JR., Douglas A. , NGUYEN, Andrew
发明人： BERA, Kallol , CARDUCCI, James D. , NOORBAKHSH, Hamid , ELIZAGA, Larry D. , BUCHBERGER, JR., Douglas A. , NGUYEN, Andrew
IPC分类号： H01L21/205 , H01L21/3065
CPC分类号： F28F7/02 , H01L21/67109
摘要： An apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead is provided herein. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be more uniform. In some embodiments, the thermal uniformity of the substrate facing surface of the showerhead may be controlled to be non-uniform in a desired pattern. In some embodiments, an apparatus for controlling thermal uniformity of a substrate-facing surface of a showerhead may include a showerhead having a substrate facing surface and one or more plenums for providing one or more process gases through a plurality of gas distribution holes formed through the substrate facing surface of the showerhead; and a plurality of flow paths having a substantially equivalent fluid conductance disposed within the showerhead to flow a heat transfer fluid.
摘要翻译：本发明提供了一种用于控制喷头的面向基板的表面的热均匀性的装置。在一些实施例中，喷头的面向衬底的表面的热均匀性可被控制为更均匀。在一些实施例中，喷头的面向衬底的表面的热均匀性可以被控制为在所需图案中不均匀。在一些实施例中，用于控制喷头的面向基板的表面的热均匀性的装置可以包括具有基板面向表面的喷头和用于通过形成的多个气体分配孔提供一个或多个处理气体的一个或多个增压室喷头的面向基板的表面; 以及多个流动路径，其具有设置在所述喷头内的基本相当的流体传导以流过传热流体。

6. 发明申请

WO2011005620A2 TUNABLE GAS FLOW EQUALIZER 审中-公开
标题翻译：可调式气体流量均衡器
公开(公告)号：WO2011005620A2
公开(公告)日：2011-01-13
申请号：PCT/US2010/040457
申请日：2010-06-29
申请人： APPLIED MATERIALS, INC. , BALAKRISHNA, Ajit , KENNEY, Jason, Andrew , NGUYEN, Andrew , COLLINS, Kenneth
发明人： BALAKRISHNA, Ajit , KENNEY, Jason, Andrew , NGUYEN, Andrew , COLLINS, Kenneth
IPC分类号： H01L21/02
CPC分类号： C23C16/4412 , C23C16/45591
摘要： A tunable gas flow equalizer is described. In an embodiment, the tunable flow equalizer includes a gas flow equalizer plate having primary opening and a secondary opening. The primary opening may surround a substrate support, and the secondary opening may be configured with a tuner. In an embodiment, the substrate support may be vertically adjustable with respect to the gas flow equalizer plate. The flow uniformity may be fine tuned by adjusting a tuner configured with a secondary opening in the gas flow equalizer plate and/or by adjusting the height of a vertically positionable substrate support plate having an inwardly tapered skirt 528 with respect to the gas flow equalizer plate 520.
摘要翻译：描述了一种可调式气体流量均衡器。在一个实施例中，可调流均衡器包括具有主开口和次开口的气流均衡器板。主要开口可以围绕衬底支撑件，并且次要开口可以配置有调谐器。在一个实施例中，衬底支撑件可以相对于气流均衡板垂直可调。流动均匀性可以通过调节配置有气体流量均衡器板中的次级开口的调谐器和/或通过调节具有相对于气体流量均衡器板的向内渐缩的裙部528的垂直可定位的衬底支撑板的高度 520。

7. 发明申请

WO2008089168A3 PLASMA IMMERSION CHAMBER 审中-公开
公开(公告)号：WO2008089168A3
公开(公告)日：2008-07-24
申请号：PCT/US2008/051051
申请日：2008-01-15
申请人： APPLIED MATERIALS, INC. , COLLINS, Kenneth S. , NGUYEN, Andrew , RAMASWAMY, Kartik , HANAWA, Hiroji , BUCHBERGER, JR., Douglas A. , HOFFMAN, Daniel J. , AL-BAYATI, Amir
发明人： COLLINS, Kenneth S. , NGUYEN, Andrew , RAMASWAMY, Kartik , HANAWA, Hiroji , BUCHBERGER, JR., Douglas A. , HOFFMAN, Daniel J. , AL-BAYATI, Amir
IPC分类号： C23C16/00
摘要： Embodiments described herein generally provide a toroidal plasma source, a plasma channeling device, a showerhead, and a substrate support assembly for use in a plasma chamber. The toroidal plasma source, plasma channeling device, showerhead, and substrate support assembly are adapted to improve the usable lifetime of the plasma chamber, as well as reduce assembly cost, increase the plasma chamber reliability, and improve device yield on the processed substrates.

8. 发明申请

WO2012054689A2 SUBSTRATE SUPPORT WITH SYMMETRICAL FEED STRUCTURE 审中-公开
标题翻译：具有对称进料结构的基板支撑
公开(公告)号：WO2012054689A2
公开(公告)日：2012-04-26
申请号：PCT/US2011/057024
申请日：2011-10-20
申请人： APPLIED MATERIALS, INC. , LIN, Xing , BUCHBERGER, Douglas A., Jr. , ZHOU, Xiaoping , NGUYEN, Andrew , SHEYNER, Anchel
发明人： LIN, Xing , BUCHBERGER, Douglas A., Jr. , ZHOU, Xiaoping , NGUYEN, Andrew , SHEYNER, Anchel
IPC分类号： H01L21/683 , H01L21/687 , H01L21/3065 , H02N13/00
CPC分类号： H01L21/67069 , H01J37/32532 , H01J37/32577 , H01J37/32715 , H01J37/32724 , H01L21/6831
摘要： Apparatus for processing a substrate is disclosed herein. In some embodiments, a substrate support may include a substrate support having a support surface for supporting a substrate the substrate support having a central axis; a first electrode disposed within the substrate support to provide RF power to a substrate when disposed on the support surface; an inner conductor coupled to the first electrode about a center of a surface of the first electrode opposing the support surface, wherein the inner conductor is tubular and extends from the first electrode parallel to and about the central axis in a direction away from the support surface of the substrate support; an outer conductor disposed about the inner conductor; and an outer dielectric layer disposed between the inner and outer conductors, the outer dielectric layer electrically isolating the outer conductor from the inner conductor. The outer conductor may be coupled to electrical ground.
摘要翻译：这里公开了用于处理衬底的设备。在一些实施例中，衬底支撑件可以包括衬底支撑件，该衬底支撑件具有用于支撑衬底的支撑表面，该衬底支撑件具有中心轴线; 第一电极，所述第一电极设置在所述基板支撑件内，以当设置在所述支撑表面上时向基板提供RF功率; 内导体，所述内导体在所述第一电极的与所述支撑表面相对的表面的中心周围联接到所述第一电极，其中所述内导体是管状的并且在远离所述支撑表面的方向上从所述第一电极平行于所述中心轴线并且围绕所述中心轴线延伸的衬底支撑件; 围绕内导体设置的外导体; 以及设置在内部和外部导体之间的外部介电层，外部介电层将外部导体与内部导体电隔离。外导体可以连接到电气地。

9. 发明申请

WO2013130191A1 ABATEMENT AND STRIP PROCESS CHAMBER IN A LOAD LOCK CONFIGURATION 审中-公开
标题翻译：一个负载锁定配置中的消费和条带过程室
公开(公告)号：WO2013130191A1
公开(公告)日：2013-09-06
申请号：PCT/US2013/022228
申请日：2013-01-18
申请人： APPLIED MATERIALS, INC. , SALINAS, Martin Jeffrey , REUTER, Paul B. , NGUYEN, Andrew , LEE, Jared Ahmad
发明人： SALINAS, Martin Jeffrey , REUTER, Paul B. , NGUYEN, Andrew , LEE, Jared Ahmad
IPC分类号： H01L21/68 , H01L21/677 , H01L21/8238
CPC分类号： H01L21/306 , H01L21/02063 , H01L21/02071 , H01L21/67167 , H01L21/67201
摘要： Embodiments of the present invention a load lock chamber including two or more isolated chamber volumes, wherein one chamber volume is configured for processing a substrate and another chamber volume is configured to provide cooling to a substrate. One embodiment of the present invention provides a load lock chamber having at least two isolated chamber volumes formed in a chamber body assembly. The at least two isolated chamber volumes may be vertically stacked. A first chamber volume may be used to process a substrate disposed therein using reactive species. A second chamber volume may include a cooled substrate support.
摘要翻译：本发明的实施例是一种包括两个或多个隔离室容积的负载锁定室，其中一个室体积被配置用于处理衬底，另一个室体积被配置为向衬底提供冷却。本发明的一个实施例提供了一种装载锁定室，其具有形成在室主体组件中的至少两个隔离室容积。至少两个隔离室容积可以垂直堆叠。可以使用第一室容积来处理其中使用反应物种的衬底。第二室容积可以包括冷却的基底支撑件。

10. 发明申请

WO2011137068A2 TWIN CHAMBER PROCESSING SYSTEM WITH SHARED VACUUM PUMP 审中-公开
标题翻译：具有共享真空泵的双腔加工系统
公开(公告)号：WO2011137068A2
公开(公告)日：2011-11-03
申请号：PCT/US2011/033775
申请日：2011-04-25
申请人： APPLIED MATERIALS, INC. , XU, Ming , NGUYEN, Andrew , LEE, Evans
发明人： XU, Ming , NGUYEN, Andrew , LEE, Evans
IPC分类号： H01L21/02 , H01L21/205 , H01L21/3065
CPC分类号： H01L21/6719 , H01L21/67017 , Y10T137/0396 , Y10T137/86083
摘要： Methods and apparatus for twin chamber processing systems are disclosed, and, in some embodiments, may include a first process chamber having a first vacuum pump to maintain a first operating pressure in a first processing volume selectively isolatable by a first gate valve disposed between the first processing volume and the first vacuum pump; a second process chamber having a second vacuum pump for maintaining a second operating pressure in a second processing volume selectively isolatable by a second gate valve disposed between the second processing volume and the second vacuum pump; and a shared vacuum pump coupled to the first and second processing volumes to reduce a pressure in each processing volume below a critical pressure level, wherein the shared vacuum pump can be selectively isolated from any of the first or second process chambers or the first or second vacuum pumps.
摘要翻译：公开了用于双室处理系统的方法和装置，并且在一些实施例中，可以包括具有第一真空泵的第一处理室，以保持第一处理容积中的第一操作压力，所述第一处理容积可选择性地通过设置在第一加工量和第一台真空泵; 具有第二真空泵的第二处理室，用于维持第二处理容积中的第二操作压力，所述第二处理容积可选择地由设置在所述第二处理容积和所述第二真空泵之间的第二闸阀隔离; 以及耦合到所述第一和第二处理体积的共享真空泵，以将每个处理体积中的压力降低到临界压力水平以下，其中所述共享真空泵可以选择性地与所述第一或第二处理室中的任何一个或所述第一或第二处理室隔离真空泵。

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