专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006020265A2 ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING MATERIALS USING THE TANTALUM PRECURSOR TAIMATA 审中-公开
标题翻译：使用TANTALUM PRECURSOR TAIMATA的含钽材料的原子层沉积
公开(公告)号：WO2006020265A2
公开(公告)日：2006-02-23
申请号：PCT/US2005/025486
申请日：2005-07-19
申请人： APPLIED MATERIALS, INC. , MARCADAL, Christophe , WANG, Rongjun , CHUNG, Hua , MAITY, Nirmalya
发明人： MARCADAL, Christophe , WANG, Rongjun , CHUNG, Hua , MAITY, Nirmalya
IPC分类号： H01L21/00
CPC分类号： H01L29/495 , C23C16/18 , C23C16/30 , C23C16/45553 , H01L21/28079 , H01L21/28562 , H01L21/76843 , H01L21/76864 , H01L29/4958 , H01L29/517
摘要： In one embodiment of the invention, a method for depositing a tantalum-containing layer on a substrate within a process chamber is provided which includes sequentially exposing the substrate to a tantalum precursor and at least one secondary precursor to deposit a tantalum-containing material during an atomic layer deposition (ALD) process. The tantalum precursor is usually tertiaryamylimido-tris(dimethylamido)tantalum (TAIMATA). The ALD process is repeated until the tantalum-containing material is deposited with a predetermined thickness. Usually, the TAIMATA is preheated prior pulsing the tantalum precursor into the process chamber. The tantalum-containing material may include tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride. The tantalum-containing material may be deposited as a barrier layer or an adhesion layer within a via or as a gate electrode material within a source/drain device.
摘要翻译：在本发明的一个实施例中，提供了一种用于在处理室内的衬底上沉积含钽层的方法，其包括将衬底顺序地暴露于钽前体和至少一个次级前体，以沉积含钽材料原子层沉积（ALD）工艺。钽前体通常是叔戊酰亚胺基 - 三（二甲基氨基）钽（TAIMATA）。重复ALD处理直到含有钽的材料以预定厚度沉积。通常，TAIMATA在将钽前体脉冲进入处理室之前被预热。含钽材料可以包括钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。含钽材料可以作为阻挡层或粘合层沉积在源极/漏极器件内的通路或栅极电极材料内。

2. 发明申请

WO2004113585A3 ATOMIC LAYER DEPOSITION OF BARRIER MATERIALS 审中-公开
公开(公告)号：WO2004113585A3
公开(公告)日：2004-12-29
申请号：PCT/US2004/019417
申请日：2004-06-18
申请人： APPLIED MATERIALS, INC. , CHUNG, Hua , WANG, Rongjun , MAITY, Nirmalya
发明人： WANG, Rongjun , MAITY, Nirmalya
IPC分类号： C23C16/02
摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.

3. 发明申请

WO2004113585A2 ATOMIC LAYER DEPOSITION OF BARRIER MATERIALS 审中-公开
标题翻译：原子层沉积障碍物
公开(公告)号：WO2004113585A2
公开(公告)日：2004-12-29
申请号：PCT/US2004/019417
申请日：2004-06-18
申请人： APPLIED MATERIALS, INC. , CHUNG, Hua , WANG, Rongjun , MAITY, Nirmalya
发明人： WANG, Rongjun , MAITY, Nirmalya
IPC分类号： C23C16/02
CPC分类号： C23C16/45529 , C23C16/02 , C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76843 , H01L21/76862 , H01L21/76871 , H01L21/76876
摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
摘要翻译：提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一个或多个脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。

4. 发明申请

WO2009108488A1 A PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING 审中-公开
标题翻译：在ECP镀层中选择性生长膜的方法
公开(公告)号：WO2009108488A1
公开(公告)日：2009-09-03
申请号：PCT/US2009/033673
申请日：2009-02-10
申请人： APPLIED MATERIALS, INC. , YU, Jick M. , WANG, Wei D. , WANG, Rongjun , CHUNG, Hua
发明人： YU, Jick M. , WANG, Wei D. , WANG, Rongjun , CHUNG, Hua
IPC分类号： H01L21/28
CPC分类号： H01L21/76879 , C25D5/02 , H01L21/76856 , H01L21/76859 , H01L21/76862 , H01L21/76873
摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.
摘要翻译：提供了在电镀工艺中控制金属在基片的场区上沉积的方法。在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。在另一方面，可以使用可以是金属的电阻层来代替电介质。在另一方面，导电场区的表面被修改以相对于开口的侧壁和底部改变其化学势。

5. 发明申请

WO2008027186A3 INTEGRATED PROCESS FOR SPUTTER DEPOSITION OF A CONDUCTIVE BARRIER LAYER, ESPECIALLY AN ALLOY OF RUTHENIUM AND TANTALUM, UNDERLYING COPPER OR COPPER ALLOY SEED LAYER 审中-公开
公开(公告)号：WO2008027186A3
公开(公告)日：2008-03-06
申请号：PCT/US2007/017967
申请日：2007-08-14
申请人： APPLIED MATERIALS, INC. , WANG, Rongjun , CHUNG, Hua , TANG, Xianmin , WANG, Jenn, Yue , WANG, Wei, D. , TANAKA, Yoichiro , YU, Jick, M. , GOPALRAJA, Praburam
发明人： WANG, Rongjun , CHUNG, Hua , TANG, Xianmin , WANG, Jenn, Yue , WANG, Wei, D. , TANAKA, Yoichiro , YU, Jick, M. , GOPALRAJA, Praburam
IPC分类号： C23C14/34 , H01L21/302
摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a hole (88) through a dielectric layer (86) a barrier layer (132) of RuTaN, an adhesion layer (112) of RuTa, and a copper seed layer (114) forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at% and more preferably at least 80 at% but less than 95 at%. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa (192, 194) when annealed presents a moisture barrier. Copper contacts (232, 238) include different alloying fractions of RuTa to shift the work function to the doping type of the silicon (216, 218).

6. 发明申请

WO2014008162A1 ALUMINUM-NITRIDE BUFFER AND ACTIVE LAYERS BY PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译：铝 - 氮化物缓冲层和活性层通过物理蒸气沉积
公开(公告)号：WO2014008162A1
公开(公告)日：2014-01-09
申请号：PCT/US2013/048879
申请日：2013-07-01
申请人： APPLIED MATERIALS, INC. , ZHU, Mingwei , PATIBANDLA, Nag B. , WANG, Rongjun , AGRAWAL, Vivek , SUBRAMANI, Anantha , DIEHL, Daniel L. , TANG, Xianmin
发明人： ZHU, Mingwei , PATIBANDLA, Nag B. , WANG, Rongjun , AGRAWAL, Vivek , SUBRAMANI, Anantha , DIEHL, Daniel L. , TANG, Xianmin
IPC分类号： C23C14/34 , C23C14/06 , C23C14/54
CPC分类号： H01L21/0254 , C23C14/0036 , C23C14/0641 , H01J37/3426 , H01J37/3467 , H01L21/02458 , H01L21/02631 , H01L21/3065 , H01L21/3228
摘要： Embodiments of the invention described herein generally relate to an apparatus and methods for forming high quality buffer layers and Group III-V layers that are used to form a useful semiconductor device, such as a power device, light emitting diode (LED), laser diode (LD) or other useful device. Embodiments of the invention may also include an apparatus and methods for forming high quality buffer layers, Group III-V layers and electrode layers that are used to form a useful semiconductor device. In some embodiments, an apparatus and method includes the use of one or more cluster tools having one or more physical vapor deposition (PVD) chambers that are adapted to deposit a high quality aluminum nitride (AlN) buffer layer that has a high crystalline orientation on a surface of a plurality of substrates at the same time.
摘要翻译：本文描述的本发明的实施例一般涉及用于形成高质量缓冲层的装置和方法，以及用于形成有用的半导体器件的III-V层，例如功率器件，发光二极管（LED），激光二极管（LD）或其他有用的装置。本发明的实施例还可以包括用于形成用于形成有用的半导体器件的高质量缓冲层，III-V族层和电极层的装置和方法。在一些实施例中，装置和方法包括使用具有一个或多个物理气相沉积（PVD）室的一个或多个簇工具，其适于将具有高结晶取向的高质量氮化铝（AlN）缓冲层沉积在同时是多个基板的表面。

7. 发明申请

WO2011019566A2 PROCESS KIT FOR RF PHYSICAL VAPOR DEPOSITION 审中-公开
标题翻译： RF物理蒸气沉积工艺套件
公开(公告)号：WO2011019566A2
公开(公告)日：2011-02-17
申请号：PCT/US2010/044420
申请日：2010-08-04
申请人： APPLIED MATERIALS, INC. , HAWRYLCHAK, Lara , SAVANDAIAH, Kirankumar , RASHEED, Muhammad, M. , WANG, Rongjun , ALLEN, Adolph, Miller , XIE, Zhigang
发明人： HAWRYLCHAK, Lara , SAVANDAIAH, Kirankumar , RASHEED, Muhammad, M. , WANG, Rongjun , ALLEN, Adolph, Miller , XIE, Zhigang
IPC分类号： H01L21/203 , C23C14/34
CPC分类号： H01L21/67017 , C23C14/34 , C23C14/564 , H01J37/3408 , H01J37/3447
摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.
摘要翻译：本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

8. 发明申请

WO2010114823A4 SPUTTERING TARGET FOR PVD CHAMBER 审中-公开
公开(公告)号：WO2010114823A4
公开(公告)日：2010-10-07
申请号：PCT/US2010/029171
申请日：2010-03-30
申请人： APPLIED MATERIALS, INC. , LIU, Zhendong , WANG, Rongjun , TANG, Xianmin , GANDIKOTA, Srinivas , GUNG, Tza-Jing , RASHEED, Muhammad M.
发明人： LIU, Zhendong , WANG, Rongjun , TANG, Xianmin , GANDIKOTA, Srinivas , GUNG, Tza-Jing , RASHEED, Muhammad M.
IPC分类号： H01L21/203 , C23C14/34
摘要： Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

9. 发明申请

WO2012109069A2 PVD SPUTTERING TARGET WITH A PROTECTED BACKING PLATE 审中-公开
标题翻译：带有保护背板的PVD溅射目标
公开(公告)号：WO2012109069A2
公开(公告)日：2012-08-16
申请号：PCT/US2012/023474
申请日：2012-02-01
申请人： APPLIED MATERIALS, INC. , RASHEED, Muhammad M. , WANG, Rongjun
发明人： RASHEED, Muhammad M. , WANG, Rongjun
IPC分类号： C23C14/34 , C23C14/50
CPC分类号： C23C14/3407 , C22C9/00 , C22C9/04 , C22C19/03 , C23C14/3414 , H01J37/3426 , H01J37/3435
摘要： Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer - usually containing a nickel material - covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.
摘要翻译：本发明的实施例提供了用于物理气相沉积（PVD）的溅射靶和形成这种溅射靶的方法。在一个实施例中，溅射靶包含设置在背板上的目标层和通常包含镍材料的保护涂层 - 覆盖并保护背衬板的区域，否则在PVD工艺期间将暴露于等离子体。在许多实施例中，靶层含有镍 - 铂合金，背板含有铜合金（例如铜 - 锌），保护涂层含有金属镍。保护涂层消除了形成高度导电的铜污染物，通常由包含在背板的暴露表面内的铜合金的等离子体侵蚀导致。因此，在PVD工艺期间，PVD室的基板和内表面保持没有这种铜污染物。

10. 发明申请

WO2010115128A9 HIGH PRESSURE RF-DC SPUTTERING AND METHODS TO IMPROVE FILM UNIFORMITY AND STEP-COVERAGE OF THIS PROCESS 审中-公开
公开(公告)号：WO2010115128A9
公开(公告)日：2010-10-07
申请号：PCT/US2010/029815
申请日：2010-04-02
申请人： APPLIED MATERIALS, INC. , ALLEN, Adolph Miller , HAWRYLCHAK, Lara , XIE, Zhigang , RASHEED, Muhammand M. , WANG, Rongjun , TANG, Xianmin , LIU, Zhendong , GUNG, Tza-Jing , GANDIKOTA, Srinivas , CHANG, Mei , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , GE, Zhenbin
发明人： ALLEN, Adolph Miller , HAWRYLCHAK, Lara , XIE, Zhigang , RASHEED, Muhammand M. , WANG, Rongjun , TANG, Xianmin , LIU, Zhendong , GUNG, Tza-Jing , GANDIKOTA, Srinivas , CHANG, Mei , COX, Michael S. , YOUNG, Donny , SAVANDAIAH, Kirankumar , GE, Zhenbin
IPC分类号： H01L21/203 , C23C14/34
摘要： Embodiments of the invention generally provide a processing chamber used to perform a physical vapor deposition (PVD) process and methods of depositing multi-compositional films. The processing chamber may include: an improved RF feed configuration to reduce any standing wave effects; an improved magnetron design to enhance RF plasma uniformity, deposited film composition and thickness uniformity; an improved substrate biasing configuration to improve process control; and an improved process kit design to improve RF field uniformity near the critical surfaces of the substrate. The method includes forming a plasma in a processing region of a chamber using an RF supply coupled to a multi-compositional target, translating a magnetron relative to the multi-compositional target, wherein the magnetron is positioned in a first position relative to a center point of the multi-compositional target while the magnetron is translating and the plasma is formed, and depositing a multi-compositional film on a substrate in the chamber.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式