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1. 发明公开

EP3768874A1 METHODS FOR DEPOSITING COATINGS ON AEROSPACE COMPONENTS 审中-公开
公开(公告)号：EP3768874A1
公开(公告)日：2021-01-27
申请号：EP19771810.9
申请日：2019-03-18
申请人： Applied Materials, Inc.
发明人： MELNIK, Yuriy , CHATTERJEE, Sukti , GANGAKHEDKAR, Kaushal , FRANKEL, Jonathan , SCUDDER, Lance A. , NARWANKAR, Pravin K. , BRITZ, David , KNISLEY, Thomas , SALY, Mark , THOMPSON, David
IPC分类号： C23C16/455 , C23C16/40 , C23C16/34 , C23C16/42

2. 发明申请

WO2018098205A1 METHODS FOR DEPOSITING FLOWABLE CARBON FILMS USING HOT WIRE CHEMICAL VAPOR DEPOSITION 审中-公开
公开(公告)号：WO2018098205A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062903
申请日：2017-11-21
申请人： APPLIED MATERIALS, INC.
发明人： CHATTERJEE, Sukti , SCUDDER, Lance A. , LIU, Eric H. , NARWANKAR, Pravin K. , MANNA, Pramit , MALLICK, Abhijit
IPC分类号： C23C16/452 , C23C16/26 , C23C16/56
摘要： In some embodiments, a method of processing a substrate disposed within a processing volume of a hot wire chemical vapor deposition (HWCVD) process chamber, includes: (a) providing a carbon containing precursor gas into the processing volume, the carbon containing precursor gas being provided into the processing volume from an inlet located a first distance above a surface of the substrate; (b) breaking hydrogen-carbon bonds within molecules of the carbon containing precursor via introduction of hydrogen radicals to the processing volume to deposit a flowable carbon layer atop the substrate, wherein the hydrogen radicals are formed by flowing a hydrogen containing gas over a plurality of filaments disposed within the processing volume above the substrate and the inlet.

3. 发明申请

WO2014164493A1 METHODS FOR REMOVING PHOTORESIST FROM SUBSTRATES WITH ATOMIC HYDROGEN 审中-公开
标题翻译：用原子氢从基板上去除光电子的方法
公开(公告)号：WO2014164493A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/022586
申请日：2014-03-10
申请人： APPLIED MATERIALS, INC.
发明人： PARK, Jeongwon , GRIFFITH CRUZ, Joe , NARWANKAR, Pravin K.
IPC分类号： H01L21/3065 , H01L21/027
CPC分类号： H01L21/31138 , G03F7/427 , H01J2237/3342
摘要： Methods for removing photoresist from a substrate are provided herein. In some embodiments, a method of removing photoresist from a substrate may include: providing a hydrogen containing gas to a first process chamber having a plurality of filaments; flowing a current through the plurality of filaments to raise a temperature of the plurality of filaments to a first temperature sufficient to decompose at least a portion of the hydrogen containing gas to form hydrogen atoms; and removing a photoresist from the substrate by exposing the photoresist to hydrogen atoms formed by the decomposition of the hydrogen containing gas.
摘要翻译：本文提供了从基板去除光致抗蚀剂的方法。在一些实施例中，从衬底去除光致抗蚀剂的方法可以包括：向具有多个细丝的第一处理室提供含氢气体; 使电流流过所述多根细丝以将所述多根细丝的温度升高到足以分解所述含氢气体的至少一部分以形成氢原子的第一温度; 以及通过将光致抗蚀剂暴露于通过含氢气体的分解形成的氢原子，从基板去除光致抗蚀剂。

4. 发明申请

WO2013096748A1 METHODS AND APPARATUS FOR CLEANING SUBSTRATE SURFACES WITH ATOMIC HYDROGEN 审中-公开
标题翻译：用原子氢清洗基板表面的方法和装置
公开(公告)号：WO2013096748A1
公开(公告)日：2013-06-27
申请号：PCT/US2012/071202
申请日：2012-12-21
申请人： APPLIED MATERIALS, INC.
发明人： GRIFFITH CRUZ, Joe , PARK, Jeongwon , NARWANKAR, Pravin K. , NGUYEN, Nate Si , NGUYEN, Hanh , CHAN, To , XU, Jingjing
IPC分类号： H01L21/302
CPC分类号： H01L21/02041 , B08B7/00 , C23C16/0227 , C23C16/44 , C23C16/4401 , C23C16/4405
摘要： Methods and apparatus for cleaning substrate surfaces are provided herein. In some embodiments, a method of cleaning a surface of a substrate may include providing a hydrogen containing gas to a first chamber having a plurality of filaments disposed therein; flowing a current through the plurality of filaments to raise a temperature of the plurality of filaments to a process temperature sufficient to decompose at least some of the hydrogen containing gas; and cleaning the surface of the substrate by exposing the substrate to hydrogen atoms formed from the decomposed hydrogen containing gas for a period of time.
摘要翻译：本文提供了清洁基板表面的方法和装置。在一些实施例中，清洁衬底表面的方法可以包括向具有多个布置在其中的细丝的第一室提供含氢气体; 使电流流过所述多根细丝以将所述多根细丝的温度升高到足以分解至少一部分含氢气体的工艺温度; 以及通过将衬底暴露于由分解的含氢气体形成的氢原子持续一段时间来清洁衬底的表面。

5. 发明公开

EP4221695A1 LOW TEMPERATURE PROCESS FOR PREPARING SILICON OXIDE COATED PHARMACEUTICALS 审中-实审
公开(公告)号：EP4221695A1
公开(公告)日：2023-08-09
申请号：EP21876617.8
申请日：2021-10-01
申请人： Applied Materials, Inc.
发明人： WANG, Fei , WANG, Miaojun , NEIKIRK, Colin C. , FRANKEL, Jonathan , NARWANKAR, Pravin K.
IPC分类号： A61K9/50 , A61K9/20

6. 发明公开

EP4161491A1 COATED DRUG COMPOSITIONS AND METHODS OF PREPARING THE SAME 审中-实审
公开(公告)号：EP4161491A1
公开(公告)日：2023-04-12
申请号：EP21818417.4
申请日：2021-06-07
申请人： Applied Materials, Inc.
发明人： WANG, Fei , WANG, Miaojun , FRANKEL, Jonathan , CHIRUVOLU, Shivkumar , NARWANKAR, Pravin K. , GANAPATHY, Balaji
IPC分类号： A61K9/50 , A61K9/16 , A61K31/397 , A61K31/517 , A61K31/4422

7. 发明申请

WO2019182967A1 METHODS FOR DEPOSITING COATINGS ON AEROSPACE COMPONENTS 审中-公开
公开(公告)号：WO2019182967A1
公开(公告)日：2019-09-26
申请号：PCT/US2019/022737
申请日：2019-03-18
申请人： APPLIED MATERIALS, INC.
发明人： MELNIK, Yuriy , CHATTERJEE, Sukti , GANGAKHEDKAR, Kaushal , FRANKEL, Jonathan , SCUDDER, Lance A. , NARWANKAR, Pravin K. , BRITZ, David , KNISLEY, Thomas , SALY, Mark , THOMPSON, David
IPC分类号： C23C16/455 , C23C16/40 , C23C16/34 , C23C16/42
摘要： Embodiments of the present disclosure generally relate to protective coatings on an aerospace component and methods for depositing the protective coatings. In one or more embodiments, a method for depositing a coating on an aerospace component includes exposing an aerospace component to a first precursor and a first reactant to form a first deposited layer on a surface of the aerospace component by a chemical vapor deposition (CVD) process or a first atomic layer deposition (ALD) process and exposing the aerospace component to a second precursor and a second reactant to form a second deposited layer on the first deposited layer by a second ALD process, where the first deposited layer and the second deposited layer have different compositions from each other.

8. 发明申请

WO2014100049A1 METHODS AND APPARATUS FOR PROCESSING GERMANIUM CONTAINING MATERIAL, A III-V COMPOUND CONTAINING MATERIAL, OR A II-VI COMPOUND CONTAINING MATERIAL DISPOSED ON A SUBSTRATE USING A HOT WIRE SOURCE 审中-公开
标题翻译：用于加工含锗材料的方法和装置，含III-V族化合物的材料或使用热电源在基材上处理的含II-VI化合物的方法和装置
公开(公告)号：WO2014100049A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/075883
申请日：2013-12-17
申请人： APPLIED MATERIALS, INC.
发明人： PARK, Jeongwon , GRIFFITH CRUZ, Joe , NARWANKAR, Pravin K.
IPC分类号： H01L21/20
CPC分类号： H01L21/02046
摘要： Methods and apparatus for processing a germanium containing material, a III-V compound containing material, or a II-VI compound containing material disposed on a substrate using a hot wire source are provided herein. In some embodiments, a method for processing a material disposed on a substrate, wherein the material is at least one of a germanium containing material, a III-V compound containing material, or a II-VI compound containing material, includes providing a hydrogen containing gas to a first process chamber having a plurality of filaments; flowing a current through the plurality of filaments to raise a temperature of the plurality of filaments to a first temperature sufficient to decompose at least a portion of the hydrogen containing gas to form hydrogen atoms; and treating a surface of an exposed material on a substrate by exposing the material to hydrogen atoms formed by the decomposition of the hydrogen containing gas.
摘要翻译：本文提供了使用热线源处理含锗材料，含III-V族化合物的材料或者设置在基板上的含有II-VI化合物的材料的方法和装置。在一些实施例中，一种用于处理设置在基板上的材料的方法，其中所述材料是含锗材料，含III-V族化合物的材料或含II-VI化合物的材料中的至少一种，包括提供含氢的气体到具有多个细丝的第一处理室; 使电流流过所述多根细丝以将所述多根细丝的温度升高到足以分解所述含氢气体的至少一部分以形成氢原子的第一温度; 以及通过将材料暴露于通过含氢气体的分解形成的氢原子来处理基板上的暴露材料的表面。

9. 发明申请

WO2009154836A3 METHODS FOR MANUFACTURING HIGH DIELECTRIC CONSTANT FILM 审中-公开
公开(公告)号：WO2009154836A3
公开(公告)日：2009-12-23
申请号：PCT/US2009/038402
申请日：2009-03-26
申请人： APPLIED MATERIALS, INC. , KHER, Shreyas S. , NARWANKAR, Pravin K. , AHMED, Khaled Z. , MA, Yi
发明人： KHER, Shreyas S. , NARWANKAR, Pravin K. , AHMED, Khaled Z. , MA, Yi
IPC分类号： H01L21/31 , H01L21/20 , H01L21/336
摘要： Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

10. 发明申请

WO2008028082A2 PRECURSORS AND HARDWARE FOR CVD AND ALD 审中-公开
标题翻译： CVD和ALD的前兆和硬件
公开(公告)号：WO2008028082A2
公开(公告)日：2008-03-06
申请号：PCT/US2007/077301
申请日：2007-08-30
申请人： APPLIED MATERIALS, INC. , KHER, Shreyas S. , NGUYEN, Son T. , NARWANKAR, Pravin K. , TANDON, Sanjeev , JUMPER, Steve , SERMONA, Vincent
发明人： KHER, Shreyas S. , NGUYEN, Son T. , NARWANKAR, Pravin K. , TANDON, Sanjeev , JUMPER, Steve , SERMONA, Vincent
IPC分类号： C23C16/40 , C23C16/44
CPC分类号： C23C16/4404 , C23C16/34 , C23C16/405 , C23C16/45544 , C23C16/45553 , C23C16/45561 , C23C16/45582
摘要： The present invention generally comprises an apparatus for depositing high k dielectric or metal gate materials in which toxic, flammable, or pyrophoric precursors may be used. Exhaust conduits may be placed on the liquid precursor or solid precursor delivery cabinet, the gas panel, and the water vapor generator area. The exhaust conduits permit a technician to access the apparatus without undue exposure to toxic, pyrophoric, or flammable gases that may collect within the liquid deliver cabinet, gas panel, and water vapor generator area.
摘要翻译：本发明通常包括用于沉积高k电介质或金属栅极材料的装置，其中可以使用有毒的，易燃的或发火的前体。排气管可以放置在液体前体或固体前体输送柜，气体面板和水蒸气发生器区域上。排气管道允许技术人员访问设备，而不会过度暴露于可能在液体输送柜，气体面板和水蒸气发生器区域内收集的有毒，自燃或可燃气体。

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