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1. 发明申请

WO2018004973A1 DIAMOND LIKE CARBON LAYER FORMED BY AN ELECTRON BEAM PLASMA PROCESS 审中-公开
标题翻译：用电子束等离子体工艺形成的类金刚石碳层
公开(公告)号：WO2018004973A1
公开(公告)日：2018-01-04
申请号：PCT/US2017/035434
申请日：2017-06-01
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yang , CHEN, Lucy , ZHOU, Jie , RAMASWAMY, Kartik , COLLINS, Kenneth S. , NEMANI, Srinivas D. , YING, Chentsau , LIU, Jingjing , LANE, Steven , MONROY, Gonzalo , CARDUCCI, James D.
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/02
摘要： Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
摘要翻译：提供了用于形成具有期望膜密度，机械强度和光学膜性能的类金刚石碳层的方法。在一个实施例中，形成类金刚石碳层的方法包括在布置在处理室中的衬底的表面上方产生电子束等离子体，并且在衬底的表面上形成类金刚石碳层。类金刚石碳层通过电子束等离子体工艺形成，其中类金刚石碳层在半导体应用中的蚀刻工艺中用作硬掩模层。类金刚石碳层可以通过轰击设置在处理室中的含碳电极来形成，以在包含碳的气体混合物中产生二次电子束至设置在处理室中的衬底的表面，并且形成类金刚石碳层在衬底的表面上与气体混合物的元素接触。

2. 发明申请

WO2021086570A1 METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开
公开(公告)号：WO2021086570A1
公开(公告)日：2021-05-06
申请号：PCT/US2020/054784
申请日：2020-10-08
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , YANG, Yang , COLLINS, Kenneth , LANE, Steven , MONROY, Gonzalo , GUO, Yue
IPC分类号： H01J37/32 , H01L21/67
摘要： Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate includes applying at least one of low frequency RF power or DC power to an upper electrode formed from a high secondary electron emission coefficient material disposed adjacent to a process volume; generating a plasma comprising ions in the process volume; bombarding the upper electrode with the ions to cause the upper electrode to emit electrons and form an electron beam; and applying a bias power comprising at least one of low frequency RF power or high frequency RF power to a lower electrode disposed in the process volume to accelerate electrons of the electron beam toward the lower electrode.

3. 发明申请

WO2019143474A1 ETCHING APPARATUS AND METHODS 审中-公开
公开(公告)号：WO2019143474A1
公开(公告)日：2019-07-25
申请号：PCT/US2019/012099
申请日：2019-01-02
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yang , RAMASWAMY, Kartik , COLLINS, Kenneth S. , LANE, Steven , MONROY, Gonzalo , CHEN, Lucy Zhiping , GUO, Yue
IPC分类号： H01J37/305 , H01J37/32 , H01L21/3065
摘要： Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

4. 发明公开

EP3475971A1 DIAMOND LIKE CARBON LAYER FORMED BY AN ELECTRON BEAM PLASMA PROCESS 审中-公开
公开(公告)号：EP3475971A1
公开(公告)日：2019-05-01
申请号：EP17820840.1
申请日：2017-06-01
申请人： Applied Materials, Inc.
发明人： YANG, Yang , CHEN, Lucy , ZHOU, Jie , RAMASWAMY, Kartik , COLLINS, Kenneth S. , NEMANI, Srinivas D. , YING, Chentsau , LIU, Jingjing , LANE, Steven , MONROY, Gonzalo , CARDUCCI, James D.
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/02

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