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1. 发明申请

WO2022235544A1 RF IMPEDANCE MATCHING NETWORKS FOR SUBSTRATE PROCESSING PLATFORM 审中-公开
公开(公告)号：WO2022235544A1
公开(公告)日：2022-11-10
申请号：PCT/US2022/027230
申请日：2022-05-02
申请人： APPLIED MATERIALS, INC.
发明人： GUO, Yue , KUTTANNAIR, Krishna Kumar , YU, Jie , RAMASWAMY, Kartik , YANG, Yang
IPC分类号： H01J37/32 , H03H7/38
摘要： Methods and apparatus using a matching network for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises a local controller connectable to a system controller of the plasma processing chamber, a first motorized capacitor connected to the local controller, a second motorized capacitor connected to the first motorized capacitor, a first sensor at an input of the matching network and a second sensor at an output of the matching network for obtaining in-line RF voltage, current, phase, harmonics, and impedance data, respectively, and an Ethernet for Control Automation Technology (EtherCAT) communication interface connecting the local controller to the first motorized capacitor, the second motorized capacitor, the first sensor, and the second sensor.

2. 发明申请

WO2018226370A1 HIGH-DENSITY LOW TEMPERATURE CARBON FILMS FOR HARDMASK AND OTHER PATTERNING APPLICATIONS 审中-公开
公开(公告)号：WO2018226370A1
公开(公告)日：2018-12-13
申请号：PCT/US2018/032684
申请日：2018-05-15
申请人： APPLIED MATERIALS, INC.
发明人： VENKATASUBRAMANIAN, Eswaranand , GOTTHEIM, Samuel E. , YANG, Yang , MANNA, Pramit , RAMASWAMY, Kartik , KOSHIZAWA, Takehito , MALLICK, Abhijit Basu , GANDIKOTA, Srinivas
IPC分类号： H01L21/02 , H01J37/32 , G03F7/20 , H01L21/033 , H01L21/683
摘要： Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than -500 MPa.

3. 发明申请

WO2018004973A1 DIAMOND LIKE CARBON LAYER FORMED BY AN ELECTRON BEAM PLASMA PROCESS 审中-公开
标题翻译：用电子束等离子体工艺形成的类金刚石碳层
公开(公告)号：WO2018004973A1
公开(公告)日：2018-01-04
申请号：PCT/US2017/035434
申请日：2017-06-01
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yang , CHEN, Lucy , ZHOU, Jie , RAMASWAMY, Kartik , COLLINS, Kenneth S. , NEMANI, Srinivas D. , YING, Chentsau , LIU, Jingjing , LANE, Steven , MONROY, Gonzalo , CARDUCCI, James D.
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/02
摘要： Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
摘要翻译：提供了用于形成具有期望膜密度，机械强度和光学膜性能的类金刚石碳层的方法。在一个实施例中，形成类金刚石碳层的方法包括在布置在处理室中的衬底的表面上方产生电子束等离子体，并且在衬底的表面上形成类金刚石碳层。类金刚石碳层通过电子束等离子体工艺形成，其中类金刚石碳层在半导体应用中的蚀刻工艺中用作硬掩模层。类金刚石碳层可以通过轰击设置在处理室中的含碳电极来形成，以在包含碳的气体混合物中产生二次电子束至设置在处理室中的衬底的表面，并且形成类金刚石碳层在衬底的表面上与气体混合物的元素接触。

4. 发明申请

WO2016148769A1 ION-ION PLASMA ATOMIC LAYER ETCH PROCESS AND REACTOR 审中-公开
标题翻译：离子等离子体原子层蚀刻工艺和反应器
公开(公告)号：WO2016148769A1
公开(公告)日：2016-09-22
申请号：PCT/US2016/013604
申请日：2016-01-15
申请人： APPLIED MATERIALS, INC.
发明人： COLLINS, Kenneth, S. , RAMASWAMY, Kartik , CARDUCCI, James, D. , RAUF, Shahid , DORF, Leonid , YANG, Yang
IPC分类号： H01L21/3065 , H01L21/265
CPC分类号： H01J37/3255 , H01J37/3233 , H01J37/32357 , H01J37/32422
摘要： A reactor with an overhead electron beam source is capable of generating an ion-ion plasma for performing an atomic layer etch process.
摘要翻译：具有顶部电子束源的反应器能够产生用于进行原子层蚀刻工艺的离子离子等离子体。

5. 发明申请

WO2013162642A1 TWO-PHASE OPERATION OF PLASMA CHAMBER BY PHASE LOCKED LOOP 审中-公开
标题翻译：通过相位锁定环进行等离子体室的两相操作
公开(公告)号：WO2013162642A1
公开(公告)日：2013-10-31
申请号：PCT/US2012/060194
申请日：2012-10-15
申请人： APPLIED MATERIALS, INC. , KOBAYASHI, Satoru , WONG, Lawrence , LIU, Jonathan , YANG, Yang , RAMASWAMY, Kartik , RAUF, Shahid , NEVIL, Shane, C. , BERA, Kallol , COLLINS, Kenneth, S.
发明人： KOBAYASHI, Satoru , WONG, Lawrence , LIU, Jonathan , YANG, Yang , RAMASWAMY, Kartik , RAUF, Shahid , NEVIL, Shane, C. , BERA, Kallol , COLLINS, Kenneth, S.
IPC分类号： H05H1/46 , H03H7/40 , H03L7/08
CPC分类号： C23C16/505 , B05C9/00 , H01J37/32091 , H01J37/32174 , H01J37/3299
摘要： Plasma distribution is controlled in a plasma reactor by controlling the phase difference between opposing RF electrodes,, in accordance with a desired or user-selected phase difference, by a phase-lock feedback control loop.
摘要翻译：通过相位锁定反馈控制回路根据期望的或用户选择的相位差来控制相对的RF电极之间的相位差，等离子体反应器中的等离子体分布被控制。

6. 发明申请

WO2023048849A1 GAS DISTRIBUTION PLATE WITH UV BLOCKER AT THE CENTER 审中-公开
公开(公告)号：WO2023048849A1
公开(公告)日：2023-03-30
申请号：PCT/US2022/040298
申请日：2022-08-15
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , WILLWERTH, Michael D. , YANG, Yang
IPC分类号： H01L21/67 , H01J37/32
摘要： Apparatus for processing substrates can include a gas distribution plate that includes an upper plate and a lower plate and a solid disk between the upper plate and the lower plate. Each of the upper plate and the lower plate has a central region and an outer region surrounding the central region, the central region being solid and the outer region having a plurality of through holes. The upper plate and the lower plate are coaxially aligned along a central axis extending through a center of the central region of the upper plate and a center of the central region of the lower plate. The solid disk is coaxially aligned with the upper plate and the lower plate. The solid disk is configured to block transmission of ultraviolet radiation through the solid disk.

7. 发明申请

WO2022256086A1 PLASMA EXCITATION WITH ION ENERGY CONTROL 审中-公开
公开(公告)号：WO2022256086A1
公开(公告)日：2022-12-08
申请号：PCT/US2022/024678
申请日：2022-04-13
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yang , GUO, Yue , RAMASWAMY, Kartik
IPC分类号： H01J37/32
摘要： Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having a voltage source selectively coupled to an output node, where the output node is configured to be coupled to an electrode disposed within a processing chamber, and where the output node is selectively coupled to a ground node. The waveform generator may also include a radio frequency (RF) signal generator, and a first filter coupled between the RF signal generator and the output node.

8. 发明申请

WO2020131843A1 ELECRON BEAM APPARATUS FOR OPTICAL DEVICE FABRICATION 审中-公开
公开(公告)号：WO2020131843A1
公开(公告)日：2020-06-25
申请号：PCT/US2019/066797
申请日：2019-12-17
申请人： APPLIED MATERIALS, INC.
发明人： RAMASWAMY, Kartik , YANG, Yang , THOTHADRI, Manivannan , CHEN, Chien-An , GODET, Ludovic , MEYER TIMMERMAN THIJSSEN, Rutger
IPC分类号： G02B6/122
摘要： Aspects of the disclosure relate to apparatus for the fabrication of waveguides. In one example, an angled ion source is utilized to project ions toward a substrate to form a waveguide which includes angled gratings, In another example, an angled electron beam source is utilized to project electrons toward a substrate to form a waveguide which includes angled gratings. Further aspects of the disclosure provide for methods of forming angled gratings on waveguides utilizing an angled ion beam source and an angled electron beam source.

9. 发明申请

WO2019199681A1 CARBON HARD MASKS FOR PATTERNING APPLICATIONS AND METHODS RELATED THERETO 审中-公开
公开(公告)号：WO2019199681A1
公开(公告)日：2019-10-17
申请号：PCT/US2019/026354
申请日：2019-04-08
申请人： APPLIED MATERIALS, INC.
发明人： VENKATASUBRAMANIAN, Eswaranand , YANG, Yang , MANNA, Pramit , RAMASWAMY, Kartik , KOSHIZAWA, Takehito , MALLICK, Abhijit Basu
IPC分类号： H01L21/02 , H01L21/324 , H01L21/033 , C23C16/455
摘要： Embodiments herein provide methods of depositing an amorphous carbon layer using a plasma enhanced chemical vapor deposition (PECVD) process and hard masks formed therefrom. In one embodiment, a method of processing a substrate includes positioning a substrate on a substrate support, the substrate support disposed in a processing volume of a processing chamber, flowing a processing gas comprising a hydrocarbon gas and a diluent gas into the processing volume, maintaining the processing volume at a processing pressure less than about 100 mTorr, igniting and maintaining a deposition plasma of the processing gas by applying a first power to one of one or more power electrodes of the processing chamber, maintaining the substrate support at a processing temperature less than about 350 °C, exposing a surface of the substrate to the deposition plasma, and depositing an amorphous carbon layer on the surface of the substrate.

10. 发明申请

WO2018175182A1 PLASMA REACTOR AND DEPOSITION OR TREATMENT OF DIAMOND-LIKE CARBON IN A PLASMA REACTOR 审中-公开
公开(公告)号：WO2018175182A1
公开(公告)日：2018-09-27
申请号：PCT/US2018/022453
申请日：2018-03-14
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yang , RAMASWAMY, Kartik , COLLINS, Kenneth S. , LANE, Steven , MONROY, Gonzalo Antonio , CHEN, Lucy , GUO, Yue , VENKATASUBRAMANIAN, Eswaranand
IPC分类号： H01J37/32 , C23C14/22
摘要： A method of performing deposition of diamond-like carbon on a workpiece in a chamber includes supporting the workpiece in the chamber facing an upper electrode suspended from a ceiling of the chamber, introducing a hydrocarbon gas into the chamber, and applying first RF power at a first frequency to the upper electrode that generates a plasma in the chamber and produces a deposition of diamond-like carbon on the workpiece. Applying the RF power generates an electron beam from the upper electrode toward the workpiece to enhance ionization of the hydrocarbon gas.

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