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1. 发明申请

WO2018034811A1 HIGH DENSITY, LOW STRESS AMORPHOUS CARBON FILM, AND PROCESS AND EQUIPMENT FOR ITS DEPOSITION 审中-公开
标题翻译：高密度低应力非晶碳膜及其沉积工艺和设备
公开(公告)号：WO2018034811A1
公开(公告)日：2018-02-22
申请号：PCT/US2017/043930
申请日：2017-07-26
申请人： APPLIED MATERIALS, INC.
发明人： LIU, Jingjing , HUA, Zhong Qiang , ALLEN, Adolph Miller , STOWELL, Michael W. , NEMANI, Srinivas D. , YING, Chentsau , CITLA, Bhargav , BABAYAN, Viachslav , HALABICA, Andrej
IPC分类号： C23C14/06 , C23C14/35 , C23C14/34 , H01J37/34
摘要： A deposited amorphous carbon film includes at least 95% carbon. A percentage of sp3 carbon-carbon bonds present in the amorphous carbon film exceeds 30%, and a hydrogen content of the amorphous carbon film is less than 5%. A process of depositing amorphous carbon on a workpiece includes positioning the workpiece within a process chamber and positioning a magnetron assembly adjacent to the process chamber. The magnetron assembly projects a magnetic field into the process chamber. The method further includes providing a carbon target such that the magnetic field extends through the carbon target toward the workpiece. The method further includes providing a source gas to the process chamber, and providing pulses of DC power to a plasma formed from the source gas within the process chamber. The pulses of DC power are supplied in pulses of 40 microseconds or less, that repeat at a frequency of at least 4 kHz.
摘要翻译：沉积的无定形碳膜包含至少95％的碳。存在于无定形碳膜中的sp3碳 - 碳键的百分比超过30％，并且无定形碳膜的氢含量小于5％。在工件上沉积无定形碳的过程包括将工件定位在处理室内并将磁控管组件定位在处理室附近。磁控管组件将磁场投射到处理室中。该方法还包括提供碳靶，使得磁场穿过碳靶延伸到工件。该方法进一步包括提供源气体到处理室，并向处理室内的源气体形成的等离子体提供DC功率的脉冲。直流电源的脉冲以40微秒或更短的脉冲供电，并以至少4 kHz的频率重复。

2. 发明申请

WO2016036533A1 NANOCRYSTALLINE DIAMOND CARBON FILM FOR 3D NAND HARDMASK APPLICATION 审中-公开
标题翻译：用于3D NAND HARDMASK应用的NANOCRYSTALLINE DIAMOND CARBON FILM
公开(公告)号：WO2016036533A1
公开(公告)日：2016-03-10
申请号：PCT/US2015/046713
申请日：2015-08-25
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Yongmei , NGAI, Christopher, S. , LIU, Jingjing , XUE, Jun , YING, Chentsau , GODET, Ludovic
IPC分类号： H01L21/027 , H01L27/115 , H01L27/108
CPC分类号： H01L21/0332 , C23C16/26 , C23C16/27 , C23C16/274 , C23C16/279 , H01L21/02115 , H01L21/02274 , H01L21/0335 , H01L21/0337 , H01L21/31111 , H01L21/31122 , H01L21/31144 , H01L27/11524 , H01L27/11556 , H01L27/1157 , H01L27/11582 , H01L29/49 , H01L29/495 , H01L29/4966 , H01L29/4975 , H01L29/51 , H01L29/518
摘要： A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a substrate with a processing surface and a supporting surface, a device layer formed on the processing surface and a nanocrystalline diamond layer formed on the processing layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm. The method can include positioning a substrate in a process chamber, depositing a device layer on a processing surface, depositing a nanocrystalline diamond layer on the device layer, the nanocrystalline diamond layer having an average grain size of between 2 nm and 5 nm, patterning and etching the nanocrystalline diamond layer, etching the device layer to form a feature and ashing the nanocrystalline diamond layer from the surface of the device layer.
摘要翻译：本文公开了用于形成半导体器件的纳米晶体金刚石层及其使用方法。该器件可以包括具有处理表面和支撑表面的衬底，形成在处理表面上的器件层和形成在处理层上的纳米晶体金刚石层，该纳米晶体金刚石层的平均晶粒尺寸在2nm和5nm之间。该方法可以包括将衬底定位在处理室中，在处理表面上沉积器件层，在器件层上沉积纳米晶体金刚石层，平均晶粒尺寸在2nm和5nm之间的纳米晶体金刚石层，图案化和蚀刻纳米晶体金刚石层，蚀刻器件层以形成特征并从器件层的表面灰化纳米晶体金刚石层。

3. 发明申请

WO2018140193A2 EXTENSION OF PVD CHAMBER WITH MULTIPLE REACTION GASES, HIGH BIAS POWER, AND HIGH POWER IMPULSE SOURCE FOR DEPOSITION, IMPLANTATION, AND TREATMENT 审中-公开
公开(公告)号：WO2018140193A2
公开(公告)日：2018-08-02
申请号：PCT/US2017/069033
申请日：2017-12-29
申请人： APPLIED MATERIALS, INC.
发明人： LIU, Jingjing , GODET, Ludovic , NEMANI, Srinivas D. , CHEN, Yongmei , SUBRAMANI, Anantha K.
摘要： Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

4. 发明申请

WO2018075165A1 POWER DELIVERY FOR HIGH POWER IMPULSE MAGNETRON SPUTTERING (HiPIMS) 审中-公开
标题翻译：大功率脉冲磁控溅射电源（HiPIMS）
公开(公告)号：WO2018075165A1
公开(公告)日：2018-04-26
申请号：PCT/US2017/051091
申请日：2017-09-12
申请人： APPLIED MATERIALS, INC.
发明人： BABAYAN, Viachslav , ALLEN, Adolph Miller , STOWELL, Michael , HUA, Zhong Qiang , JOHNSON, Carl R. , FAUNE, Vanessa , LIU, Jingjing
IPC分类号： H01J37/34
摘要： A system for the generation and delivery of a pulsed, high voltage signal for a process chamber includes a remotely disposed high voltage supply to generate a high voltage signal, a pulser disposed relatively closer to the process chamber than the high voltage supply, a first shielded cable to deliver the high voltage signal from the remotely disposed high voltage supply to the pulser to be pulsed, and a second shielded cable to deliver a pulsed, high voltage signal from the pulser to the process chamber. A method for generating and delivering a pulsed, high voltage signal to a process chamber includes generating a high voltage signal at a location remote from the process chamber, delivering the high voltage signal to a location relatively closer to the process chamber be pulsed, pulsing the delivered, high voltage signal, and delivering the pulsed, high voltage signal to the process chamber.
摘要翻译：用于产生和输送用于处理室的脉冲高压信号的系统包括远程设置的高电压电源以产生高电压信号，设置在离处理室相对更近的脉冲发生器处高电压电源，用于将远程设置的高压电源的高电压信号传送到要脉冲的脉冲发生器的第一屏蔽电缆，以及用于从脉冲发生器向处理室传送脉冲高电压信号的第二屏蔽电缆。用于产生脉冲高压信号并将其输送到处理室的方法包括：在远离处理室的位置产生高电压信号;将高电压信号输送到相对靠近处理室的位置脉冲化; 输送高压信号，并将脉冲高压信号输送到处理室。

5. 发明申请

WO2018034771A1 PULSE SHAPE CONTROLLER FOR SPUTTER SOURCES 审中-公开
标题翻译：脉冲形状控制器用于驱动源
公开(公告)号：WO2018034771A1
公开(公告)日：2018-02-22
申请号：PCT/US2017/042653
申请日：2017-07-18
申请人： APPLIED MATERIALS, INC.
发明人： STOWELL, Michael W. , BABAYAN, Viachslav , LIU, Jingjing , HUA, Zhong Qiang
IPC分类号： H01J37/34 , C23C14/35
摘要： Embodiments presented herein relate to a pulse control system for a substrate processing system. The pulse control system includes a power source, a system controller, and a pulse shape controller. The pulse shape controller is coupled to the power source and in communication with the system controller. The pulse shape controller includes a first switch assembly and a second switch assembly. The first switch assembly includes a first switch having a first end and a second end. The first switch is configurable between an open state and a closed state. The second switch assembly includes a second switch having a first end and a second end. The first switch is in the closed state and the second switch is in the open state. The first switch in the closed state is configured to allow a pulse supplied by the power source to transfer through the pulse shape controller.
摘要翻译：这里提出的实施例涉及用于衬底处理系统的脉冲控制系统。脉冲控制系统包括电源，系统控制器和脉冲形状控制器。脉冲形状控制器耦合到电源并与系统控制器通信。脉冲形状控制器包括第一开关组件和第二开关组件。第一开关组件包括具有第一端和第二端的第一开关。第一个开关可以在打开状态和关闭状态之间配置。第二开关组件包括具有第一端和第二端的第二开关。第一个开关处于关闭状态，第二个开关处于打开状态。处于关闭状态的第一开关被配置为允许由电源提供的脉冲通过脉冲形状控制器传送。

6. 发明申请

WO2018004973A1 DIAMOND LIKE CARBON LAYER FORMED BY AN ELECTRON BEAM PLASMA PROCESS 审中-公开
标题翻译：用电子束等离子体工艺形成的类金刚石碳层
公开(公告)号：WO2018004973A1
公开(公告)日：2018-01-04
申请号：PCT/US2017/035434
申请日：2017-06-01
申请人： APPLIED MATERIALS, INC.
发明人： YANG, Yang , CHEN, Lucy , ZHOU, Jie , RAMASWAMY, Kartik , COLLINS, Kenneth S. , NEMANI, Srinivas D. , YING, Chentsau , LIU, Jingjing , LANE, Steven , MONROY, Gonzalo , CARDUCCI, James D.
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/02
摘要： Methods for forming a diamond like carbon layer with desired film density, mechanical strength and optical film properties are provided. In one embodiment, a method of forming a diamond like carbon layer includes generating an electron beam plasma above a surface of a substrate disposed in a processing chamber, and forming a diamond like carbon layer on the surface of the substrate. The diamond like carbon layer is formed by an electron beam plasma process, wherein the diamond like carbon layer serves as a hardmask layer in an etching process in semiconductor applications. The diamond like carbon layer may be formed by bombarding a carbon containing electrode disposed in a processing chamber to generate a secondary electron beam in a gas mixture containing carbon to a surface of a substrate disposed in the processing chamber, and forming a diamond like carbon layer on the surface of the substrate from elements of the gas mixture.
摘要翻译：提供了用于形成具有期望膜密度，机械强度和光学膜性能的类金刚石碳层的方法。在一个实施例中，形成类金刚石碳层的方法包括在布置在处理室中的衬底的表面上方产生电子束等离子体，并且在衬底的表面上形成类金刚石碳层。类金刚石碳层通过电子束等离子体工艺形成，其中类金刚石碳层在半导体应用中的蚀刻工艺中用作硬掩模层。类金刚石碳层可以通过轰击设置在处理室中的含碳电极来形成，以在包含碳的气体混合物中产生二次电子束至设置在处理室中的衬底的表面，并且形成类金刚石碳层在衬底的表面上与气体混合物的元素接触。

7. 发明申请

WO2016196073A1 APPARATUS AND METHODS FOR SPACER DEPOSITION AND SELECTIVE REMOVAL IN AN ADVANCED PATTERNING PROCESS 审中-公开
标题翻译：高级方案中间隔沉积和选择性去除的装置和方法
公开(公告)号：WO2016196073A1
公开(公告)日：2016-12-08
申请号：PCT/US2016/033882
申请日：2016-05-24
申请人： APPLIED MATERIALS, INC.
发明人： ZHOU, Jie , YING, Chentsau , ROY, Shambhu N. , NEMANI, Srinivas D. , LIU, Jingjing , YIEH, Ellie Y.
IPC分类号： H01L21/027 , H01L21/768 , H01L21/3213
CPC分类号： H01L21/311 , H01L21/0337
摘要： Embodiments herein provide apparatus and methods for performing a deposition and a patterning process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for depositing and patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has a first group of openings defined therebetween, selectively treating a first portion of the spacer layer formed on the substrate without treating a second portion of the spacer layer, and selectively removing the treated first portion of the spacer layer.
摘要翻译：本文的实施例提供了用于在多个图案化工艺中对具有良好轮廓控制的间隔层进行沉积和图案化工艺的装置和方法。在一个实施例中，在多次图案化工艺期间用于沉积和图案化间隔层的方法包括在设置在衬底上的图案化结构的外表面上共形形成间隔层，其中图案化结构具有限定在其间的第一组开口，选择性地处理形成在衬底上的间隔层的第一部分，而不处理间隔层的第二部分，并且选择性地去除间隔层的经处理的第一部分。

8. 发明申请

WO2014164300A1 PULSED PC PLASMA ETCHING PROCESS AND APPARATUS 审中-公开
标题翻译： PULSED PC等离子体蚀刻工艺和设备
公开(公告)号：WO2014164300A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/021789
申请日：2014-03-07
申请人： APPLIED MATERIALS, INC
发明人： DESHMUKH, Subhash , REN, He , LIU, Jingjing
IPC分类号： H01L21/3065
CPC分类号： H01J37/32146 , H01J37/32091 , H01J37/32706 , H01J37/32715 , H01J37/32724 , H01L21/31116 , H01L21/32136 , H01L21/67069 , H01L21/68742 , H01L21/6875
摘要： In one aspect, a plasma etching apparatus is disclosed. The plasma etching apparatus includes a chamber body having a process chamber adapted to receive a substrate, an RF source coupled to an RF electrode, a pedestal located in the processing chamber and adapted to support a substrate, a plurality of conductive pins adapted to contact and support the substrate during processing, and a DC bias source electrically coupled to the plurality of conductive pins. Etching methods are provided, as are numerous other aspects.
摘要翻译：一方面，公开了一种等离子体蚀刻装置。等离子体蚀刻装置包括具有适于接纳基板的处理室的室主体，耦合到RF电极的RF源，位于处理室中的基座，并适于支撑基板，多个导电引脚适于接触和在处理期间支撑衬底，以及电耦合到多个导电引脚的DC偏压源。提供了蚀刻方法，以及许多其它方面。

9. 发明申请

WO2013063260A1 HIGH TEMPERATURE TUNGSTEN METALLIZATION PROCESS 审中-公开
标题翻译：高温钨钢冶金工艺
公开(公告)号：WO2013063260A1
公开(公告)日：2013-05-02
申请号：PCT/US2012/061914
申请日：2012-10-25
申请人： APPLIED MATERIALS, INC. , COLLINS, Joshua , NARASIMHAN, Murali , LIU, Jingjing , LEE, Sang-Hyeob , WU, Kai , GELATOS, Avgerinos V.
发明人： COLLINS, Joshua , NARASIMHAN, Murali , LIU, Jingjing , LEE, Sang-Hyeob , WU, Kai , GELATOS, Avgerinos V.
IPC分类号： H01L21/31 , H01L21/205
CPC分类号： H01L21/76876 , H01L21/743 , H01L21/76814 , H01L21/76841 , H01L21/76843 , H01L21/76861 , H01L21/76864 , H01L21/76877 , H01L23/53266 , H01L27/10885 , H01L27/10891 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700°C to less than 1,000°C). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.
摘要翻译：本发明的实施方案提供了一种用于沉积含钨材料的改进方法。在一个实施例中，在基板上形成含钨材料的方法包括在设置在基板上的电介质层上形成含有氮化钛的粘合层，在粘合层上形成氮化钨中间层，其中氮化钨中间层含有氮化钨和碳。该方法还包括在热退火工艺（例如，从约700℃至小于1000℃的温度）内通过热分解从氮化钨中间层形成钨阻挡层（例如，钨或钨 - 碳材料）。随后，该方法包括任选地在钨阻挡层上形成成核层，任选地在浸泡过程期间将钨阻挡层和/或成核层暴露于还原剂，以及在钨阻挡层上或之上形成钨体层，以及 /或成核层。

10. 发明申请

WO2018140193A3 EXTENSION OF PVD CHAMBER WITH MULTIPLE REACTION GASES, HIGH BIAS POWER, AND HIGH POWER IMPULSE SOURCE FOR DEPOSITION, IMPLANTATION, AND TREATMENT 审中-公开
公开(公告)号：WO2018140193A3
公开(公告)日：2018-08-02
申请号：PCT/US2017/069033
申请日：2017-12-29
申请人： APPLIED MATERIALS, INC.
发明人： LIU, Jingjing , GODET, Ludovic , NEMANI, Srinivas D. , CHEN, Yongmei , SUBRAMANI, Anantha K.
IPC分类号： C23C14/34 , C23C14/35 , C23C14/48 , H01J37/34 , H01L21/02 , H01L21/67 , C23C14/54
摘要： Embodiments of the present disclosure provide a sputtering chamber with in-situ ion implantation capability. In one embodiment, the sputtering chamber comprises a target, an RF and a DC power supplies coupled to the target, a support body comprising a flat substrate receiving surface, a bias power source coupled to the support body, a pulse controller coupled to the bias power source, wherein the pulse controller applies a pulse control signal to the bias power source such that the bias power is delivered either in a regular pulsed mode having a pulse duration of about 100-200 microseconds and a pulse repetition frequency of about 1-200 Hz, or a high frequency pulsed mode having a pulse duration of about 100-300 microseconds and a pulse repetition frequency of about 200 Hz to about 20 KHz, and an exhaust assembly having a concentric pumping port formed through a bottom of the processing chamber.

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