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1. 发明申请

US20020127508A1 Emissivity-change-free pumping plate kit in a single wafer chamber 有权
标题翻译：发射率更换泵板套件在单个晶圆室中
公开(公告)号：US20020127508A1
公开(公告)日：2002-09-12
申请号：US10051651
申请日：2002-01-15
申请人： Applied Materials, Inc.
发明人： Xiaoliang Jin , Shulin Wang , Lee Luo , Henry Ho , Steven A. Chen
IPC分类号： F27D001/00
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/45591 , C23C16/46 , H01L21/67109
摘要： An apparatus that includes a pumping plate having a skirt, where the skirt contains a number of holes and a wafer access slot, and where the number of holes are sized and positioned to provide uniform heating of a susceptor.
摘要翻译：一种装置，其包括具有裙部的泵板，其中所述裙部包含多个孔和晶片通道狭槽，并且其中孔的数量被定尺寸和定位以提供感受器的均匀加热。

2. 发明申请

US20020137312A1 Emissivity-change-free pumping plate kit in a single wafer chamber 失效
标题翻译：发射率更换泵板套件在单个晶圆室中
公开(公告)号：US20020137312A1
公开(公告)日：2002-09-26
申请号：US09798424
申请日：2001-03-02
申请人： Applied Materials, Inc.
发明人： Lee Luo , Henry Ho , Shulin Wang , Binh Hoa Tran , Alexander Tam , Errol A.C. Sanchez , Xianzhi Tao , Steven A. Chen
IPC分类号： H01L021/20 , H01L021/36 , C30B001/00
CPC分类号： C23C16/45521 , C23C16/4401 , C23C16/4412 , C23C16/45591 , C23C16/46
摘要： Provided herein is an emissivity-change-free pumping plate kit used in a single wafer chamber. This kit comprises a top open pumping plate, and optionally a skirt and/or a second stage choking plate. The skirt may be installed around the wafer heater, underneath the wafer heater, or along the chamber body inside the chamber. The choking plate is installed downstream of the top open pumping plate along the purge gas flow. Also provided is a method of preventing emissivity change and further providing optimal film thickness uniformity during wafer processing by utilizing such kit in the chamber.
摘要翻译：本文提供了在单个晶片室中使用的无发射率变化的泵浦板组件。该套件包括顶部开放抽吸板，以及任选的裙部和/或第二级阻塞板。裙部可以安装在晶片加热器周围，在晶片加热器下方，或者沿着腔室内的腔室主体。扼流板沿着吹扫气流安装在顶部开放式泵板的下游。还提供了一种防止发射率变化的方法，并且在晶片加工期间通过在室中利用这种试剂盒进一步提供最佳的膜厚均匀性。

3. 发明申请

US20040206375A1 Integrated bevel clean chamber 失效
标题翻译：集成斜面清洁室
公开(公告)号：US20040206375A1
公开(公告)日：2004-10-21
申请号：US10826492
申请日：2004-04-16
申请人： Applied Materials, Inc.
发明人： Henry Ho , Lily L. Pang , Anh N. Nguyen , Alexander N. Lerner
IPC分类号： B08B003/02
CPC分类号： H01L21/68 , B08B3/02 , H01L21/67034 , H01L21/67051 , H01L21/6838
摘要： A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness. The apparatus further includes a centering actuation mechanism in communication with the substrate centering posts, and a fluid dispensing arm pivotally connected to the cell body, the fluid dispensing arm being configured to dispense a processing fluid onto a first side of the substrate.
摘要翻译：一种用于清洁半导体衬底的斜面的方法和设备。该装置通常包括具有直立壁的细胞体和流体排放盆，位于流体排放盆中心定位的可旋转真空吸盘，以及围绕可旋转真空吸盘以相等的径向增量定位的至少3个基体定心构件。基板定心构件包括垂直定向的轴，其具有延伸穿过其中的纵向轴线;盖构件，其定位在所述轴的上终端上方;凸起中心部分形成在所述盖构件上，所述凸起中心部分在位置处具有最大厚度与纵向轴线重合，以及定位在凸起中心部分的径向外侧的盖构件上的基板定心柱，该基板定心柱的上终端从盖构件延伸至超过最大厚度的距离。所述装置还包括与所述基板定心柱连通的定心致动机构，以及可枢转地连接到所述电池体的流体分配臂，所述流体分配臂构造成将处理流体分配到所述基板的第一侧上。

4. 发明申请

US20040016637A1 Multi-chemistry plating system 失效
标题翻译：多化学电镀系统
公开(公告)号：US20040016637A1
公开(公告)日：2004-01-29
申请号：US10616284
申请日：2003-07-08
申请人： APPLIED MATERIALS, INC.
发明人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
IPC分类号： C25D017/00
CPC分类号： H01L21/6719 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , B08B3/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6715 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

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