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1. 发明专利

JPH04107266A METHOD AND DEVICE FOR PLASMA-FLASH VAPOR DEPOSITION 失效
公开(公告)号：JPH04107266A
公开(公告)日：1992-04-08
申请号：JP22605690
申请日：1990-08-28
申请人： NAT RES INST METALS , ANELVA CORP
发明人： FUKUTOMI KATSUO , KOMORI KAZUNORI , TANAKA YOSHIAKI , ASANO TOSHIHISA , MAEDA HIROSHI , FUKAGAWA WATARU , HOSOKAWA NAOKICHI
IPC分类号： C23C14/24
摘要： PURPOSE:To produce low-pressure and high-temp. plasma and to prevent defective matching by producing the plasma of only an inert gas and supplying an active gas to the tail of the plasma. CONSTITUTION:An inert gas such as gaseous argon is introduced into a plasma torch 2 through an inlet line 9, and gaseous oxygen is introduced into a film forming chamber 1 through a gas injection nozzle 15. A high-frequency wave is impressed on a high-frequency coil 10 to produce low-pressure and high-temp. plasma 3 in an inner tube 6, and the stable plasma column 3 and plasma tail 22 are formed. A substrate 4 is heated, and a superconducting powder is supplied to the torch 2 in minute amts. through an inlet line 20. When the plasma flame is stabilized, a shutter 14 is opened to form a superconducting thin film on the surface of the substrate 4. The infiltration of an unvolatilized YBaCuO superconducting powder into the film is not recognized.

2. 发明专利

JPH02240252A METHOD AND DEVICE FOR PLASMA VAPOR DEPOSITION 失效
公开(公告)号：JPH02240252A
公开(公告)日：1990-09-25
申请号：JP5769989
申请日：1989-03-13
申请人： NAT RES INST METALS , ANELVA CORP
发明人： FUKUTOMI KATSUO , TANAKA YOSHIAKI , ASANO TOSHIHISA , MAEDA HIROSHI , ASAMAKI TATSUO , HOSOKAWA NAOKICHI , YAMAZAKI TAKESHI , SEKIGUCHI ATSUSHI , TAKAGI SHINJI , ARAKAWA HIROSHI
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , C23C14/22 , C23C14/24 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To efficiently and stably produce a thin film having good quality high accuracy by supplying every prescribed amt. of powder raw materials into the low pressure high-temp. plasma generated in a vacuum vessel to evaporate the materials and depositing the evaporated raw materials on a substrate. CONSTITUTION:Ar and O2 27 introduced into a water-cooled plasma generating section 20 of the plasma vapor deposition device subjected to a vacuum evacuation by a main discharge system 60 and a preliminary discharge system 50 are converted to plasma by a high-frequency generator 30 to generate the low- pressure high temp. plasma 26. Every prescribed amt. of the powder raw materials 13 contg. the constituting elements of an oxide superconductor are fed by a raw material supplying device 10 into this plasma 26 and are thereby evaporated. The evaporated raw materials 13 are introduced along an arrow 46 direction and are introduced into a substrate holder 40. The raw materials 13 arrive at the substrate 41 kept at a prescribed temp. by a heater 43, by which the good thin film of the oxide superconductor is formed.

3. 发明专利

JPH01139765A SPUTTERING APPARATUS 失效
公开(公告)号：JPH01139765A
公开(公告)日：1989-06-01
申请号：JP29690087
申请日：1987-11-25
申请人： ANELVA CORP , NAT RES INST METALS
发明人： AOSHIMA SHOICHI , NOZAKI TOSHIYUKI , TANAKA YOSHIAKI , FUKUTOMI KATSUO , ASANO TOSHIHISA
IPC分类号： C23C14/54
摘要： PURPOSE:To stably form a delicate multielement thin film with good reproducibility by providing a spectroscopic monitor for measuring the intensity of the emission spectrum of the sputtered atom in the space surrounded by plural plate targets and a substrate holder. CONSTITUTION:The three cathode assemblies 20, to which the plate target 21 is fixed, are arranged at regular intervals so that the surface of the target 21 is inclined toward the surface of the substrate holder 31, and a thin film is formed on a substrate 32. At this time, the sensor head 41 constituting a part of the spectroscopic monitor 40 is arranged in the space surrounded by the target 21 and the substrate holder 31, the emission spectrum inherent in the atom emitted from the atom sputtered from the target 21 is taken out, and only the desired light is injected into a photodiode 45. The output 46 is injected into a comparator 47 and compared with a set level value, a signal 48 is outputted to a controller 49 in accordance with the intensity of the emitted light to control an RF power source 50, and the desired intensity level of the light emitted from the sputtered atom is maintained.

4. 发明专利

JPH1025062A ROLLER TYPE FIXTURE 失效
公开(公告)号：JPH1025062A
公开(公告)日：1998-01-27
申请号：JP17806196
申请日：1996-07-08
申请人： NAT RES INST METALS
发明人： ASANO TOSHIHISA , INOUE TADASHI
IPC分类号： B65H75/02 , B21C47/28 , B21C47/32 , B65H75/28
摘要： PROBLEM TO BE SOLVED: To safely and easily perform the winding, deliverly, and movement of a wire rod to a bobbin, by connecting bobbin holders; wherein rotatable rollers are arranged in a position where the outer peripheral surfaces of the rollers near to a bobbin drum peripheral surface than a supporting members; with each other by a connecting member between side plates with each other. SOLUTION: Bobbin holders 1A and 1B, oppositely arranged with a bobbin nipped, are constituted by connecting opposite side plates 11 and 11, wherein rollers 2 for making the bobbin turnable and roller spindles 3 are arranged, with each other by a supporting member 12. The outer peripheral ends of the side plates 11 can be made into a circular arc stage, to be for rollingly movable with fixed to the bobbin. The adjustment of the positions of butterfly nuts 5 each time can be eliminated even the quantity of the wire rod wound on the bobbin is increased/decreased some degree, by adopting the connecting members 4 as screw bars, and the end parts of the screw bars are inserted into bridgedly supporting members 13, bridged to the notched parts 111 of the side plates 11 oppositely arranged, to be fixed by the butterfly nuts 5 via springs 6.

5. 发明专利

JPH0644841A MANUFACTURE OF OXIDE SUPERCONDUCTING WIRE ROD 失效
公开(公告)号：JPH0644841A
公开(公告)日：1994-02-18
申请号：JP18405891
申请日：1991-06-28
申请人： NAT RES INST METALS
发明人： TANAKA YOSHIAKI , ASANO TOSHIHISA , FUKUTOMI KATSUO , KOMORI KAZUNORI , MAEDA HIROSHI
IPC分类号： C01G1/00 , C01G29/00 , H01B12/04 , H01B13/00
摘要： PURPOSE:To improve mechanical strength as well as superconductive characteristic by using a silver-copper alloy principally containing copper in silver as a base material of an oxide superconducting wire rod. CONSTITUTION:A silver-copper alloy is used as a base material and 0.05-90 atoms% of copper is contained in the silver-copper alloy, for an oxide superconducting wire rod for manufacturing a complex material consisting of the base material and an oxide superconducting material. When the oxide superconducting material belongs to the Bi group, at least one element among Bi, Sr, Ca, Mg, Ba, and Ti is added to the silver-copper alloy by 0.05-5 atoms% in total. When the material belongs to the Y group, at least one element among Y, Ba, MG, and Ti is added thereto by 0.05-5 atoms%. in total. The mechanical strength is improved by using the silver-copper alloy for which elements such as copper is added to silver, as the base material for the tube material or for the substrate material. Handling of the oxide superconducting wire rod is facilitated, and the wire rod can be used practically as a magnet wire rod, while the time for heat treatment is reduced, and the superconductive characteristic is improved.

6. 发明专利

JPH03263715A MANUFACTURE OF OXIDE SUPERCONDUCTING TAPE-SHAPED WIRE ROD 失效
公开(公告)号：JPH03263715A
公开(公告)日：1991-11-25
申请号：JP5998490
申请日：1990-03-13
申请人： NAT RES INST METALS , MITSUBISHI HEAVY IND LTD
发明人： MAEDA HIROSHI , TANAKA YOSHIAKI , INOUE TADASHI , SEKINE HISASHI , ASANO TOSHIHISA , NUMATA KOICHI
IPC分类号： B21F19/00 , H01B12/04 , H01B13/00
摘要： PURPOSE:To obtain a dense tape-shaped wire rod made of an oxide superconductor with a large discharge/absorption quantity of oxygen by filling the oxide superconductor into a metal pipe, applying cold machining to form a tape shape, removing the outer pipe, then applying heat treatment. CONSTITUTION:Y-Ba-O superconducting powder 2 is filled into a silver pipe and copper pipe 1, and draw machining and roll machining are applied to form a flat shape. The silver pipe and copper pipe 1 are removed by etching, heat treatment is applied for 14hr at 900 deg.C in the oxygen atmosphere, then the temperature is lowered at the cooling speed 3 deg.C/min. When the superconduction transition of a superconductor obtained by using the silver pipe was measured by the induction method, it was confirmed that the superconductor of the 90K level existed in the single phase. Zero resistance was confirmed at 92K by the DC four-terminal method. The same result as the above was also obtained for the superconductor obtained by using the copper pipe 1.

7. 发明专利

JPH01275434A PRODUCTION OF HIGH TEMPERATURE SUPERCONDUCTING OXIDE FILM 失效
公开(公告)号：JPH01275434A
公开(公告)日：1989-11-06
申请号：JP10292288
申请日：1988-04-26
申请人： NAT RES INST METALS , MITSUI MINING & SMELTING CO
发明人： FUKUTOMI KATSUO , TANAKA YOSHIAKI , ASANO TOSHIHISA , MAEDA HIROSHI , MACHIDA JUNICHI
IPC分类号： H01L39/24 , C01G1/00 , C01G29/00 , C04B41/87 , C30B23/02 , H01B12/06 , H01B13/00
摘要： PURPOSE:To obtain a superconducting Bi-Sr-Ca-Cu oxide film having such superconducting characteristics as about 100K superconduction transition finishing point with high reproducibility by heating a substrate to half-melt the lower part of a film on the substrate side at least once in the early stage of film formation, cooling the substrate to a prescribed temp. and continuing film formation. CONSTITUTION:When a film of a multiple oxide consisting of Bi, Sr, Ca, Cu and O is formed on the surface of a substrate to produce a superconducting film, the surface of the substrate is kept in a high temp. range, e.g., of 750-850 deg.C, preferably 790-830 deg.C in which the multiple oxide half-melts until a half-molten layer attains to 2,000-5,000Angstrom thickness in the early stage of film formation. The surface of the substrate is then cooled to a temp. range, e.g., of 650-750 deg.C, preferably 700-740 deg.C in which epitaxial growth can be carried out and film formation is continued. The resulting film is annealed at 870-890 deg.C for 10min-2hr in a flow of gaseous oxygen to produce a superconducting film. This film exhibits satisfactory superconducting characteristics in 1:1:2:2-1:1:0.5:0.5, preferably 1:1:1:about 0.5 atomic ratio of Bi:Sr:Ca: Cu.

8. 发明专利

JPH01188456A OXIDE HIGH TEMPERATURE SUPERCONDUCTOR 失效
公开(公告)号：JPH01188456A
公开(公告)日：1989-07-27
申请号：JP1008488
申请日：1988-01-20
申请人： NAT RES INST METALS
发明人： MAEDA HIROSHI , TANAKA YOSHIAKI , FUKUTOMI KATSUO , ASANO TOSHIHISA
IPC分类号： C04B35/00 , C01G1/00 , C01G3/00 , C01G29/00 , C04B35/45 , H01B12/00 , H01L39/12
摘要： PURPOSE:To obtain the subject superconductor contg. no rare earth element and having high transition temp. to superconducting state by precalcining a mixture consisting of an oxide, carbide, carbonate, etc., of each element constituting the superconductor in a specified proportion, and crushing, molding and then sintering the precalcined product. CONSTITUTION:A mixture of oxide, carbide, carbonate, etc., of each constituting element in a specified proportion (e.g., a mixture of Bi2O3, SrO, CaCO3, and CuO in 1:1:1:2 atomic ratio) is precalcined at 700-900 deg.C for several-20hrs. The precalcined product is crushed and then molded to pellets, then sintered further at 800-900 deg.C. Thus, the subject superconductor consisting of an oxide expressed by the formula is obtd., wherein A is Sb and/or As; each B and C is Be, Mg, Ga, Sr, or Ba, but different to each other; 0

9. 发明专利

JPH0643268B2 失效
公开(公告)号：JPH0643268B2
公开(公告)日：1994-06-08
申请号：JP1008488
申请日：1988-01-20
申请人： NAT RES INST METALS
发明人： MAEDA HIROSHI , TANAKA YOSHIAKI , FUKUTOMI KATSUO , ASANO TOSHIHISA
IPC分类号： C04B35/00 , C01G1/00 , C01G3/00 , C01G29/00 , C04B35/45 , H01B12/00 , H01L39/12
摘要： The present invention provides a high-temperature oxide superconductor which comprises an oxide expressed as (Bi1-x Ax) - By - Cz -Cu oxide (where A is Sb and/or As; B and C are elements different from each other, each being one or more elements selected from Be, Mg, Ca, Sr and Ba; and 0

10. 发明专利

JPH06144990A APPARATUS FOR PRODUCTION OF CRYSTAL ORIENTED THIN FILM 失效
公开(公告)号：JPH06144990A
公开(公告)日：1994-05-24
申请号：JP32231892
申请日：1992-11-09
申请人： NAT RES INST METALS
发明人： FUKUTOMI KATSUO , AOKI SHIGEKI , KOMORI KAZUNORI , ASANO TOSHIHISA , TANAKA YOSHIAKI , MAEDA HIROSHI
IPC分类号： C23C14/34 , C30B23/08 , C30B29/22
摘要： PURPOSE:To enable the crystal oriented thin film formation capable of easily and specifically arranging bearings. CONSTITUTION:A sputtering device is provided with a substrate holder electrode 3 having a rotary stage part 2 to be mounted with a substrate 1 and an auxiliary electrode 4 consisting of a counter plate or annular plate which exists between the rotary stage part 2 of this substrate holder electrode 3 and a target 5 and forms a hollow cathodic plasma space. The inclination angle of the rotary stage part 2 is rotationally controlled and a high charge particle group is controlled to a beam shape in the hollow cathodic plasma space of the auxiliary electrode 4 by a bias voltage applied to the auxiliary electrode 4 and the substrate holder substrate 3, by which the crystal oriented film is formed on the surface of the substrate 1.

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