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1. 发明授权

US3574573A Composite superconductor with layers of vanadium material and gallium material 失效
标题翻译：具有钒材料和镀金层的复合超导体
公开(公告)号：US3574573A
公开(公告)日：1971-04-13
申请号：US3574573D
申请日：1967-06-19
申请人： NAT RES INST METALS
发明人： TACHIKAWA KYOJI , TANAKA YOSHIAKI , FUKUDA SATOSHI
IPC分类号： H01L39/14 , H01L39/24 , B32B15/00
CPC分类号： H01L39/14 , H01L39/2409 , Y10S428/93 , Y10S505/812 , Y10S505/813 , Y10S505/819 , Y10S505/821 , Y10S505/919 , Y10T29/49014 , Y10T428/12674 , Y10T428/12681 , Y10T428/12708 , Y10T428/12812 , Y10T428/12819
摘要： A SUPERCONDUCTOR CONSISTING OF A VANADIUM SUBSTRATE OF WIRE OR TAPE FORM AND AN OVERLYING LAYER OF SUPERCONDUCTIVE V3GA INTERMETALLIC COMPOUND. A METHOD FOR MANUFACTURING SUCH SUPERCONDUCTOR, COMPRISING THE STEPS OF FORMING A LAYER OF INTERMEDIATE COMPOUNDS RICHER IN GALLIUM ON THE SURFACE OF A VANADIUM SUBSTRATE HAVING SAID FORM THROUGH A REACTION BETWEEN THE VANADIUM SUBSTRATE AND THE SURROUNDING MOLTEN GALLIUM AT A TEMPERATURE BETWEEN 500*C. AND 800*C., AND OF CONVERTING SAID PHASE TO V3GA AT A TEMPERATURE BETWEEN 600*C. AND 850*C. AN APPARATUS BEST SUITED FOR PRACTICING SAID METHOD IN THE MANUFACUTE OF SUCH SUPERCONDUCTOR.

2. 发明授权

US3674553A Superconductor and its manufacturing method 失效
标题翻译：超导体及其制造方法
公开(公告)号：US3674553A
公开(公告)日：1972-07-04
申请号：US3674553D
申请日：1970-06-01
申请人： NAT RES INST METALS
发明人： TACHIKAWA KYOJI , TANAKA YOSHIAKI , FUKUDA SATOSHI
IPC分类号： H01L39/14 , H01L39/24 , B44D1/18
CPC分类号： H01L39/14 , H01L39/2409 , Y10S428/93 , Y10S505/812 , Y10S505/813 , Y10S505/819 , Y10S505/821 , Y10S505/919 , Y10T29/49014 , Y10T428/12674 , Y10T428/12681 , Y10T428/12708 , Y10T428/12812 , Y10T428/12819
摘要： A SUPERCONDUCTOR CONSISTING OF A VANADIUM SUBSTRATE OF WIRE OR TAPE FORM AND AN OVERLYING LAYER OF SUPERCOMDUCTIVE V3GA INTERMETALLIC COMPOUND. A METHOD FOR MANUFACTURING SUCH SUPERCONDUCTOR, COMPRISING THE STEPS OF FORMING A LAYER OF INTERMEDIATE COMPOUNDS RICHER IN GALLIUM ON THE SURFACE OF A VANADIUM SUBSTRATE HAVING SAID FORM THROUGH A REACTION BETWEEN THE VANADIUM SUBSTRATE AND THE SURROUNDING MOLTEN GALLIUM AT A TEMPERATURE BETWEEN 500*C. AND 800*C. AND OF CONVERTING SAID PHASE TO V2GA AT A TEMPERATURE BETWEEN 600*C. AND 850*C. AN APPARATUS BEST SUITED FOR PRACTICING SAID METHOD IN THE MANUFACTURE OF SUCH SUPERCONDUCTOR.

3. 发明专利

JPH07296654A MANUFACTURE OF OXIDE SUPERCONDUCTOR 失效
公开(公告)号：JPH07296654A
公开(公告)日：1995-11-10
申请号：JP10765294
申请日：1994-04-22
申请人： NAT RES INST METALS , SUMITOMO HEAVY INDUSTRIES
发明人： TANAKA YOSHIAKI , ASANO TOSHIHISA , MATSUMOTO FUMIAKI , MAEDA HIROSHI , YANAGIYA TOMOYUKI , ISHIZUKA MASAYUKI
IPC分类号： C01G1/00 , H01B13/00
摘要： PURPOSE:To improve plastic processability togetherwith a mechanical strength and superconductive characteristics, in manufacture of a superconductive wire rod in which a base material, such as a sheath material, is used. CONSTITUTION:A silver copper alloy added with titanium is used as a base material. Critical current density is increased in a range containing 0.05-90 atom % Cu and 0.01-0.4 atom % Ti.

4. 发明专利

JPH0797293A APPARATUS FOR PRODUCING CRYSTAL-ORIENTED THIN FILM 失效
公开(公告)号：JPH0797293A
公开(公告)日：1995-04-11
申请号：JP23951293
申请日：1993-09-27
申请人： MITSUBA ELECTRIC MFG CO , NAT RES INST METALS
发明人： FUKUTOMI KATSUO , AOKI SHIGEKI , KOMORI KAZUNORI , ASANO TOSHIHISA , TANAKA YOSHIAKI , MAEDA HIROSHI
IPC分类号： C01G1/00 , C23C14/08 , C23C14/22 , C23C14/34 , C23C14/50 , C30B23/02 , C30B23/08 , C30B29/16
摘要： PURPOSE:To provide an apparatus for producing a crystal-oriented thin film capable of efficiently producing a thin film having excellent plane orientation comparable to a film produced by an ion-beam method on one or both surfaces of a substrate. CONSTITUTION:This film-forming apparatus is a sputtering apparatus provided with a substrate electrode 1 having plural substrate holders 2 to enable the inclination of substrate at an arbitrary angle theta relative to the horizontal plane and an assistant electrode 3 composed of plural (n) rectangular electrodes placed under the substrate electrode 1 and capable of forming a cathodic plasma space between a target 4 placed under the assistant electrode. The assistant electrode 3 is electrically insulated from the target 4. The cross-section of the plasma boundary line 5 between the cathode dark space and the negative glow of the cathodic plasma space is controlled to form a parabolic form by adjusting the bias voltage applied to the substrate electrode 1 and the bias voltage applied to the assistant electrode 3. A film having crystal orientation is formed on the surface of the substrate by this process.

5. 发明专利

JPH06196032A MANUFACTURE OF OXIDE SUPERCONDUCTIVE WIRE 失效
公开(公告)号：JPH06196032A
公开(公告)日：1994-07-15
申请号：JP35676192
申请日：1992-12-22
申请人： NAT RES INST METALS , SUMITOMO HEAVY INDUSTRIES
发明人： TANAKA YOSHIAKI , YANAGIYA TOMOYUKI , MATSUMOTO FUMIAKI , FUKUTOMI KATSUO , ASANO TOSHIHISA , KOMORI KAZUNORI , MAEDA HIROSHI
IPC分类号： C01B13/14 , C01G1/00 , H01B12/04 , H01B13/00
摘要： PURPOSE:To suppress a superconduction characteristic from deteriorating by preventing swelling, in a method of manufacturing a superconductive wire in which a sheath material of pure silver or the like is used. CONSTITUTION:In order to suppress generation of oxygen gas at the time of heat treatment, a temporary burned crushed material, before charging a base material with it, is previously heat treated in the atmosphere of low oxygen, to obtain material powder by suitable reaction after a crushing process or the like, and the base material is charged with the powder. When processed under the low oxygen atmosphere, oxygen gas is slowly generated from a temperature considerably lower than a melting temperature at the time of heat treatment after charging a sheath material.

6. 发明专利

JPH06196031A MANUFACTURE OF OXIDE SUPERCONDUCTIVE WIRE 失效
公开(公告)号：JPH06196031A
公开(公告)日：1994-07-15
申请号：JP35676092
申请日：1992-12-22
申请人： NAT RES INST METALS , SUMITOMO HEAVY INDUSTRIES
发明人： TANAKA YOSHIAKI , YANAGIYA TOMOYUKI , MATSUMOTO FUMIAKI , FUKUTOMI KATSUO , ASANO TOSHIHISA , KOMORI KAZUNORI , MAEDA HIROSHI
IPC分类号： C01G29/00 , C01G1/00 , H01B12/04 , H01B13/00 , H01L39/14 , H01L39/24
摘要： PURPOSE:To obtain a manufacturing method whereby plasticizing workability can be improved also with mechanical strength and supercondution characteristic, in a wire of compounding an oxide superconductive material and a base material. CONSTITUTION:0.01-3atm% is added by totalizing elements of any one kind or more of Zr, Hf, Al, V, Nb, Ta to a silver copper alloy base material containing 0.05-90atm% copper. Or 0.01-10atm% Au is added. 0.01-3atm% by totalizing elements of any one kind or more of Ti, Zr, Hf, V, Nb, Ta, Mg, Ca, Sr, Ba or 0.05-5atm% by totalizing elements of any one kind or more of Au, Al, Ga, In, Sn is added to a silver alloy base material. Further, the base material is charged with a Bi system oxide material of chemical composition formula Bi1PbuSrxCayCuzOw (where represented by u=0-0.03, x=0.8-1.2, y=0.2-1.2, z=0.8-2.0), to apply a work process.

7. 发明专利

JPH04107266A METHOD AND DEVICE FOR PLASMA-FLASH VAPOR DEPOSITION 失效
公开(公告)号：JPH04107266A
公开(公告)日：1992-04-08
申请号：JP22605690
申请日：1990-08-28
申请人： NAT RES INST METALS , ANELVA CORP
发明人： FUKUTOMI KATSUO , KOMORI KAZUNORI , TANAKA YOSHIAKI , ASANO TOSHIHISA , MAEDA HIROSHI , FUKAGAWA WATARU , HOSOKAWA NAOKICHI
IPC分类号： C23C14/24
摘要： PURPOSE:To produce low-pressure and high-temp. plasma and to prevent defective matching by producing the plasma of only an inert gas and supplying an active gas to the tail of the plasma. CONSTITUTION:An inert gas such as gaseous argon is introduced into a plasma torch 2 through an inlet line 9, and gaseous oxygen is introduced into a film forming chamber 1 through a gas injection nozzle 15. A high-frequency wave is impressed on a high-frequency coil 10 to produce low-pressure and high-temp. plasma 3 in an inner tube 6, and the stable plasma column 3 and plasma tail 22 are formed. A substrate 4 is heated, and a superconducting powder is supplied to the torch 2 in minute amts. through an inlet line 20. When the plasma flame is stabilized, a shutter 14 is opened to form a superconducting thin film on the surface of the substrate 4. The infiltration of an unvolatilized YBaCuO superconducting powder into the film is not recognized.

8. 发明专利

JPH02240252A METHOD AND DEVICE FOR PLASMA VAPOR DEPOSITION 失效
公开(公告)号：JPH02240252A
公开(公告)日：1990-09-25
申请号：JP5769989
申请日：1989-03-13
申请人： NAT RES INST METALS , ANELVA CORP
发明人： FUKUTOMI KATSUO , TANAKA YOSHIAKI , ASANO TOSHIHISA , MAEDA HIROSHI , ASAMAKI TATSUO , HOSOKAWA NAOKICHI , YAMAZAKI TAKESHI , SEKIGUCHI ATSUSHI , TAKAGI SHINJI , ARAKAWA HIROSHI
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , C23C14/22 , C23C14/24 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/24
摘要： PURPOSE:To efficiently and stably produce a thin film having good quality high accuracy by supplying every prescribed amt. of powder raw materials into the low pressure high-temp. plasma generated in a vacuum vessel to evaporate the materials and depositing the evaporated raw materials on a substrate. CONSTITUTION:Ar and O2 27 introduced into a water-cooled plasma generating section 20 of the plasma vapor deposition device subjected to a vacuum evacuation by a main discharge system 60 and a preliminary discharge system 50 are converted to plasma by a high-frequency generator 30 to generate the low- pressure high temp. plasma 26. Every prescribed amt. of the powder raw materials 13 contg. the constituting elements of an oxide superconductor are fed by a raw material supplying device 10 into this plasma 26 and are thereby evaporated. The evaporated raw materials 13 are introduced along an arrow 46 direction and are introduced into a substrate holder 40. The raw materials 13 arrive at the substrate 41 kept at a prescribed temp. by a heater 43, by which the good thin film of the oxide superconductor is formed.

9. 发明专利

JPH01139765A SPUTTERING APPARATUS 失效
公开(公告)号：JPH01139765A
公开(公告)日：1989-06-01
申请号：JP29690087
申请日：1987-11-25
申请人： ANELVA CORP , NAT RES INST METALS
发明人： AOSHIMA SHOICHI , NOZAKI TOSHIYUKI , TANAKA YOSHIAKI , FUKUTOMI KATSUO , ASANO TOSHIHISA
IPC分类号： C23C14/54
摘要： PURPOSE:To stably form a delicate multielement thin film with good reproducibility by providing a spectroscopic monitor for measuring the intensity of the emission spectrum of the sputtered atom in the space surrounded by plural plate targets and a substrate holder. CONSTITUTION:The three cathode assemblies 20, to which the plate target 21 is fixed, are arranged at regular intervals so that the surface of the target 21 is inclined toward the surface of the substrate holder 31, and a thin film is formed on a substrate 32. At this time, the sensor head 41 constituting a part of the spectroscopic monitor 40 is arranged in the space surrounded by the target 21 and the substrate holder 31, the emission spectrum inherent in the atom emitted from the atom sputtered from the target 21 is taken out, and only the desired light is injected into a photodiode 45. The output 46 is injected into a comparator 47 and compared with a set level value, a signal 48 is outputted to a controller 49 in accordance with the intensity of the emitted light to control an RF power source 50, and the desired intensity level of the light emitted from the sputtered atom is maintained.

10. 发明专利

JPS54130895A METHOD OF FABRICATING V3GA COMPOSITE SUPERCONDUCTOR 失效
公开(公告)号：JPS54130895A
公开(公告)日：1979-10-11
申请号：JP3815478
申请日：1978-04-03
申请人： NAT RES INST METALS
发明人： TATEKAWA KIYOUJI , TANAKA YOSHIAKI , YOSHIDA YUUJI , ASANO TOSHIHISA
IPC分类号： C22F1/00 , H01B13/00 , H01L39/06 , H01L39/24

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